DCR780G42. Phase Control Thyristor Preliminary Information KEY PARAMETERS FEATURES 4200V 780A 10500A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION

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1 Phase Control Thyristor Preliminary Information DS August 27 (LN25545) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability V DRM I T(AV) I TSM dv/dt* di/dt 42V 78A 15A 15V/µs 4A/us APPLICATIONS * Higher dv/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages V DRM and V RRM V Conditions DCR78G4 DCR78G Lower voltage grades available. T vj = -4 C to 125 C, I DRM = I RRM = 1mA, V DRM, V RRM t p = 1ms, V DSM & V RSM = V DRM & V RRM + 1V respectively Outline type code: G (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/1

2 CURRENT RATINGS T case = 6 C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled I T(AV) Mean on-state current Half wave resistive load 78 A I T(RMS) RMS value A I T Continuous (direct) on-state current A SURGE RATINGS Symbol Parameter Test Conditions Max. Units I TSM Surge (non-repetitive) on-state current 1ms half sine, T case = 125 C 1.5 ka I 2 t I 2 t for fusing V R =.55 MA 2 s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units R th(j-c) Thermal resistance junction to case Double side cooled DC C/W Single side cooled Anode DC C/W Cathode DC C/W R th(c-h) Thermal resistance case to heatsink Clamping force 11.5kN Double side -.72 C/W (with mounting compound) Single side C/W T vj Virtual junction temperature On-state (conducting) C Reverse (blocking) C T stg Storage temperature range C F m Clamping force 1 13 kn 2/1

3 DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units I RRM/I DRM Peak reverse and off-state current At V RRM/V DRM, T case = 125 C - 1 ma dv/dt Max. linear rate of rise of off-state voltage To 67% V DRM, T j = 125 C, gate open - 15 V/µs di/dt Rate of rise of on-state current From 67% V DRM to 2x I T(AV) Repetitive 5Hz - 2 A/µs Gate source 3V, 1, Non-repetitive - 4 A/µs t r <.5µs, T j = 125 C V T(TO) Threshold voltage Low level 1A to 5A at T case = 125 C -.87 V Threshold voltage High level 5A to 3A at T case = 125 C V r T On-state slope resistance Low level 1A to 5A at T case = 125 C m On-state slope resistance High level 5A to 3A at T case = 125 C m t gd Delay time V D = 67% V DRM, gate source 3V, 1 TBD TBD µs t r =.5µs, T j = 25 C t q Turn-off time T j = 125 C, V R = 2V, di/dt = 5A/µs, 3 6 µs dv DR/dt = 2V/µs linear Q S Stored charge I T = 2A, T j = 125 C, di/dt = 5A/µs, µc I L Latching current T j = 25 C, V D = 5V - 3 A I H Holding current T j = 25 C, R G-K =, I TM = 5A, I T = 5A - 3 ma 3/1

4 GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units V GT Gate trigger voltage V DRM = 5V, T case = 25 C 1.5 V V GD Gate non-trigger voltage At V DRM, T case = 125 C TBD V I GT Gate trigger current V DRM = 5V, T case = 25 C 25 ma I GD Gate non-trigger current V DRM = 5V, T case = 25 C TBD ma CURVES Instantaneous on-state current I T - (A) C min 25 C max 125 C min 125 C max Instantaneous on-state voltage V T - (V) Fig.2 Maximum & minimum on-state characteristics V TM EQUATION Where A = B = V TM = A + Bln (I T ) + C.I T +D.I T C =.839 D = these values are valid for T j = 125 C for I T 5A to 3A 4/1

5 16 13 Mean power dissipation - (kw) Maximum case temperature, T case ( o C ) Mean on-state current, I T(AV) - (A) Mean on-state current, I T(AV) - (A) Fig.3 On-state power dissipation sine wave Fig.4 Maximum permissible case temperature, double side cooled sine wave Maximum heatsink temperature, T Heatsink - ( o C ) Mean on-state current, I T(AV) - (A) Mean power dissipation - (kw) d.c Mean on-state current, I T(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled sine wave Fig.6 On-state power dissipation rectangular wave 5/1

6 Maximum permissible case temperature, Tcase - ( C) d.c Mean on-state current, I T(AV) - (A) Maximum heatsik temperature T heatsink - ( o C) d.c Mean on-state current, I T(AV ) - (A) Fig.7 Maximum permissible case temperature, double side cooled rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled rectangular wave Themal impedance Z th(j-c) ( C/kW ) 7 Double Side Cooled 6 Anode Cooled Cathode Cooled Time ( s ) Double side cooled Ri ( C/kW) Ti (s) Anode side cooled Ri ( C/kW) Ti (s) Cathode side cooled Ri ( C/kW) Zth = Á [Ri x ( 1-exp. (t/ti))] [1] ÁR th(j-c) Conduction Ti (s) Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. Double side cooling Anode Side Cooling Cathode Sided Cooling ÁZth (z) ÁZth (z) ÁZth (z) Â sine. rect. Â sine. rect. Â sine. rect Fig.9 Maximum (limit) transient thermal impedance junction to case ( C/kW) 6/1

7 Surge current, ITSM- (ka) Conditions: Tcase = 125 C V R = Pulse width = 1ms Surge current, ITSM - (ka) I TSM Conditions: T case = 125 C V R = half-sine wave I 2 t I 2 t (MA 2 s) Number of cycles Pulse width, t P - (ms) Fig.1 Multi-cycle surge current Fig.11 Single-cycle surge current 7/1

8 1 Gate trigger voltage, VGT - (V) Pulse Power P GM (Watts) Pulse Width us 5 Frequency Hz Tj = 125 o C Tj = 25 o C Upper Limit Preferred gate drive area Tj = -4 o C Lower Limit Gate trigger current I GT, - (A) Fig12 Gate Characteristics Gate trigger voltage, VGT - (V) Lower Limit Upper Limit 5W 1W 2W 5W 1W 15W -4C Gate trigger current, I GT - (A) Fig. 13 Gate characteristics 8/1

9 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK 2 OFFSET (NOM.) TO GATE TUBE HOLE Ø3.6 X 2. DEEP (IN BOTH ELECTRODES) Maximum Thickness (mm) Minimum Thickness (mm) Device DCR83SG DCR86SG DCR818SG DCR82SG DCR18G DCR96G DCR69G DCR59G DCR47G Ø57. MAX CATHODE Ø33.95 NOM Ø1.5 GATE ANODE Ø33.95 NOM FOR PACKAGE HEIGHT SEE TABLE Clamping force: 11.5 kn ±1% Lead length: 42mm Lead terminal connector: M4 ring Package outline type code: G Fig.14 Package outline 9/1

10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX LTD Tel: +44() / Fax: +44() Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44() Fax: +44() Dynex Semiconductor 23 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 1/1