T9S0 Phase Control Thyristor

Transcription

1 The T9S0 SCR employs a Center Fired amplifying gate structure which allows the SCR to be reliably operated at high di/dt and high dv/dt conditions in phase control applications. FEATURES: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Ceramic Package Excellent Surge and I 2 t s ORDERING INFORMATION Select the complete 12 digit Part Number using the table below. EXAMPLE: T9S DH is an 1800V-1500A SCR with 200ma IGT and 12 inch gate and cathode potential leads. PART Voltage Voltage Code Current V DRM -V RRM I tavg Tq I GT Current Code Turn-Off Gate Leads T9S0 1200V A DH 1400V V us typ. 200ma 12" 1800V 18 APPLICATIONS: DC Power Supplies Plating Supplies Welding Supplies Revised: 5/5/2008 Page 1 of 7

2 Absolute Maximum s Characteristic Symbol Units Repetitive Peak Voltage V DRM -V RRM 1800 Volts Average On-State Current, T C =72 C I T(Avg.) 2000 A RMS On-State Current, T C =72 C I T(RMS) 3142 A Average On-State Current, T C =55 C I T(Avg.) 2200 A RMS On-State Current, T C =55 C I T(RMS) 3456 A Peak One Cycle Surge Current, 60Hz, V R =0V I TSM 27,000 A Peak One Cycle Surge Current, 50Hz, V R =0V I TSM 25,456 A Fuse Coordination I 2 t, 60Hz I 2 t 3.04E+06 A 2 s Fuse Coordination I 2 t, 50Hz I 2 t 3.24E+06 A 2 s Critical Rate-of-Rise of On-State Current di/dt 100 A/us Repetitive Critical Rate-of-Rise of On-State Current di/dt 200 A/us Non-Repetitive Critical Rate-of-Rise of Off-State Voltage dv/dt 1000 V/us VD = ⅔ VDRM Peak Gate Power, 100us P GM 16 Watts Average Gate Power P G(avg) 5 Watts Operating Temperature Tj -20 to+125 C Storage Temperature T Stg. -50 to+150 C Approximate Weight 0.65 lb 0.29 Kg Mounting Force lbs Knewtons Information presented is based upon limited testing or projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to suitability for use, reliability, capability or future availability of this product. Page 2 of 7

3 Electrical Characteristics, Tj=25 C unless otherwise specified Characteristic Symbol Test Conditions min typ max Units Repetitive Peak Leakage Current I DRM /I RRM Tj=125 C, V DRM =Rated 150 ma Peak On-State Voltage V TM Tj=125 C, I TM =1500A 1.15 V V TM Model, Low Level V 0 Tj=125 C V VTM = V O + r I TM r 15% I TM - π I TM 2.26E-01 mω V TM Model, High Level V 0 Tj=125 C V VTM = V O + r I TM r π I TM - I TSM 1.50E-01 mω V TM Model, Hig4-Term A Tj=125 C V TM = A + B Ln(I TM ) + B 15%I TM - I TSM C (I TM ) + D (I TM ) ½ C 1.28E-04 D 3.27E-03 Turn-On Delay Time t d V D = 0.5 V DRM 1.5 us Gate Drive: 40V - 20Ω Turn-Off Time tq Tj=125 C 400 us dv/dt = 20V/us to 80% V DRM Gate Trigger Current I GT Tj=25 C V D = 12V ma Gate Trigger Voltage V GT V Peak Reverse Gate Voltage V GRM 5 V Thermal Characteristics Characteristic Symbol Test Conditions max Units Thermal Resistance Junction to Case RΘ jc Double side cooled C/Watt Case to Sink RΘ cs Double side cooled C/Watt Thermal Impedance Model ZΘ jc Double side cooled ZΘ jc (t) = Σ(A(N) (1-exp(-t/Tau(N)))) where: N = A(N) = 1.42E E E E-03 Tau(N) = 5.95E E E E+00 Page 3 of 7

4 Maximum On-State Voltage Drop 3.00 Tj = 125 C VTM (V) ITM MAXIMUM TRANSIENT THERMAL IMPEDANCE 1.60E-02 Thermal Impedance ( C/Watt) 1.40E E E E E E E E Time (sec) Page 4 of 7

5 Maximum On-State Power Dissipation Sinusoidal Waveform 4000 Pavg (Watts) Maximum Allowable Case Temperature 150 Sinusoidal Waveform 130 Tc ( C) Page 5 of 7

6 Maximum On-State Power Dissipation Square Waveform Pavg (Watts) Maximum Allowable Case Temperature 150 Square Waveform 130 Tc ( C) Page 6 of 7

7 4000 MAXIMUM REVERSE RECOVERY CHARGE QRA 125 C (ucoul) di/dt Rate (A/usec) 30 Page 7 of 7