Sidac. (79 V to 330 V) Features. Applications. General Description

Size: px

Start display at page:

Download "Sidac. (79 V to 330 V) Features. Applications. General Description"

Cora Perry
6 years ago
Views:

1 E9 DO15X DO21 Surface Mount TO92 Type 7 TO22 (79 V to 33 V) RoHS E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater powerhandling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low onstate voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device. Teccor s sidacs feature glasspassivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information. Applications Highvoltage lamp ignitors Natural gas ignitors Gas oil ignitors Highvoltage power supplies Xenon ignitors Overvoltage protector Pulse generators Fluorescent lighting ignitors HID lighting ignitors Features RoHS Compliant AC circuit oriented Glasspassivated junctions High surge current capability 2 Littelfuse, Inc. E9 1 Thyristor Product Catalog

2 Data Sheets Type Part No. I T(RMS) V DRM I DRM I BO (1) Do not use tab (6) (7) (8) (1) (2) (3) () Pin 1 Pin 3 Pin 2 Do not use TO92 DO15X DO21 TO22 Amps Volts Volts µamps µamps mamps See Package Dimensions section for variations. (9) MAX MIN MIN MAX MAX MAX TYP MAX K9E7 K9G K9S 1 ± K15E7 K15G K15S 1 ± K11E7 K11G K11S 1 ± K12E7 K12G K12S 1 ± K13E7 K13G K13S 1 ± K1E7 K1G K1S 1 ± K15E7 K15G K15S 1 ± K2E7 K2G K2F1 K2S 1 ± K22E7 K22G K22F1 K22S 1 ± K2E7 K2G K2F1 K2S 1 ± K21F1 (11) ± K25E7 K25G K25F1 K25S 1 ± K3F1 1 ± Specific Test Conditions di/dt Critical rateofrise of onstate current dv/dt Critical rateofrise of offstate voltage at rated V DRM ; T J 1 C dv q /dt Critical rateofrise of turnoff voltage at 8 khz I BO Breakover current 5/ sine wave I DRM Repetitive peak offstate current 5/ sine wave; V = V DRM Dynamic holding current 5/ sine wave; R = 1 Ω I T(RMS) Onstate RMS current T J 125 C 5/ sine wave I TSM Peak onecycle surge current 5/ sine wave (nonrepetitive) ( V V ) R S Switching resistance BO S R = S 5/ sine wave ( I I ) S BO Breakover voltage 5/ sine wave V DRM Repetitive peak offstate voltage V TM Peak onstate voltage; I T = 1 A General Notes All measurements are made at with a resistive load at an ambient temperature of 25 C unless otherwise specified. Storage temperature range (T S ) is 65 C to 15 C. The case (T C ) or lead (T L ) temperature is measured as shown on the dimensional outline drawings in the Package Dimensions section of this catalog. Junction temperature range (T J ) is C to 125 C. Lead solder temperature is a maximum of 23 C for 1 s maximum; 1/16" (1.59 mm) from case. Electrical Specification Notes (1) See Figure E9.5 for change versus junction temperature. (2) See Figure E9.6 for I BO versus junction temperature. (3) See Figure E9.2 for versus case temperature. () See Figure E9.13 for test circuit. (5) See Figure E9.1 for more than one full cycle rating. (6) T C 9 C for TO92 T C 15 C for TO22 s T L 1 C for DO15X T L 9 C for DO21 (7) See Figure E9.1 for clarification of sidac operation. (8) For best sidac operation, the load impedance should be near or less than switching resistance. (9) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (1) Do not use electrically connected mounting tab or center lead. (11) The K21F1 sidac is designed to ensure good commutation at higher switching frequencies, as required in ignitor circuits for high intensity discharge (HID) lighting. A typical circuit for a metal halide lamp ignitor is shown in Figure E9.17. With proper component selection this circuit will produce three pulses for ignition of Osram lamp types such as HQIT7W, HQIT15W, and HQIT25W which require a minimum of three pulses at kv magnitude and >1 µs duration each at a minimum repetition rate of 3.3 khz. V VI Characteristics I S I DRM I BO ( V S ) R S = (I S I BO ) I T I I V T V DRM V S R S V E9 2 2 Littelfuse, Inc Thyristor Product Catalog

3 Data Sheets LK V TM I TSM R S dv q /dt dv/dt di/dt (5) (8) Volts MAX Amps Package 5 Hz kω Volts/µSec Volts/µSec Amps/µSec E G F S MIN MIN MIN TYP Thermal Resistance (Steady State) R θjc [R θja ] C/W (TYPICAL) * E Package G Package F Package S Package 2. (T C = 25 C) [95] 18 [75] 7 [5] ** 3 *** [85] Ratio of.5 * See Electrical Specification Note (6). ** R θja for TO22 Type 23 and Type 1 is 7 C/Watt. *** Mounted on 1 cm 2 copper foil surface; twoounce copper foil Case Temperature (T C ) C Peak Surge (Nonrepetitive) Onstate Current [I TSM ] Amps SUPPLY FREQUENCY: Sinusoidal LOAD: Resistive RMS ONSTATE CURRENT: I T RMS Maximum Rated Value at Specified Junction Temperature. Notes: 1) Blocking capability may be lost during and immediately following surge current interval. 2. 2) Overload may not be repeated until junction temperature has returned to steadystate rated value Surge Current Duration Full Cycles Figure E9.2 Normalized DC Holding Current versus Case/Lead Temperature Figure E9.1 Peak Surge Current versus Surge Current Duration 2 Littelfuse, Inc. E9 3 Thyristor Product Catalog

4 Data Sheets Repetitive Peak Onstate Current (I TRM ) Amps x 13 f = 1 khz f = 5 khz f = 1 khz f = 2 khz di/dt Limit Line NonRepeated f = 1 Hz I TRM Firing Current Waveform Repetition Frequency f=5 Hz f = 1 Hz x 12 1 x 11 Pulse base width (t o ) ms to l/f T J = 125 ºC Max Repetitive Peak Breakover Current (I BO ) Multiplier V = Junction Temperature (T J ) C 13 Figure E9.3 Repetitive Peak Onstate Current (I TRM ) versus Pulse Width at Various Frequencies Figure E9.6 Normalized Repetitive Peak Breakover Current versus Junction Temperature Maximum Allowable Ambient Temperature (T A ) C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive FREE AIR RATING TO22 Type 1 DO15X and TO22 Type 23 and 1 TO92 and DO RMS Onstate Current [I T(RMS) ] Amps Positive or Negative Instantaneous Onstate Current (i T ) Amps T L = 25 C TO92, DO21 and DO15X "E", "S" and "G" Packages TO22 "F" Package Positive or Negative Instantaneous Onstate Voltage (v T ) Volts Figure E9. Maximum Allowable Ambient Temperature versus Onstate Current Figure E9.7 Onstate Current versus Onstate Voltage (Typical) Percentage of Change % K2xxxF1 K1xxxE K1xxxG K1xxxS K2xxxE K2xxxG K2xxxS Junction Temperature (T J ) C 1 Average Onstate Power Dissipation [P D(AV) ] Watts CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Basic Cirucit TO22 "F" Package "E", "S" and "G" Packages TO92, DO21 and DO15X RMS Onstate Current [I T(RMS) ] Amps Figure E9.5 Normalized Change versus Junction Temperature Figure E9.8 Power Dissipation (Typical) versus Onstate Current [Refer to Figure E9.1 for Basic Circuit] E9 2 Littelfuse, Inc Thyristor Product Catalog

5 Data Sheets SCR 1 1 µf Xenon Lamp 125 V ac 125 V ac 2 W 12 V ac 25 V 1 µf 5 V kv K22G 2 V 2 M.1 µf V Trigger Transformer 2:1 Figure E9.9 Comparison of versus SCR for Gas Ignitor Circuit Figure E9.12 Xenon Lamp Flashing Circuit 1 µf 5 V.7 µf 1 V.7 µf 1 V.7 k ½ W 1.2 µf K12E 2 V 125 V ac Push to test S1 S1 Switch to test in each direction 1 Ω 1% Device Under Test 2 V ac I PK Scope Trace Stops H.V. Ignitor Scope Indication Figure E9.1 Circuit (Low Voltage Input) for Gas Ignition Figure E9.13 Dynamic Holding Current Test Circuit for s Ballast Ballast 3.3 k.7 µf V Lamp 7.5 k.22 µf Lamp 125 V ac Load 12 V ac 16 mh 22 V ac 1215 Conduction Angle Load Current 12 V ac 22 V ac Figure E9.11 Typical High Pressure Sodium Lamp Firing Circuit Figure E9.1 Basic Circuit 2 Littelfuse, Inc. E9 5 Thyristor Product Catalog

6 Data Sheets (a) Circuit (b) Waveforms R SIDAC V C V DC(IN) V B V C C I L R L t I L R max V IN I BO t R min V IN V TM (MIN) Figure E9.15 Relaxation Oscillator Using a Input 2N6127 (or equivalent) (See Note B) R BB1 = 15 Ω V CE Monitor TIP7 1 mh Input Voltage V 5 V Collector Current.63 A t w 3 ms (See Note A) t w 1 ms 5 Ω 5 Ω V BB1 =1 V R BB2 = 1 Ω V BB2 = V CC = 2 V R S =.1 Ω I C Monitor Collector Voltage 1 V V CE(sat) Test Circuit Voltage and Current Waveforms Note A: Input pulse width is increased until I CM =.63 A. Note B: (or Diac or series of Diacs) chosen so that is just below V CEO rating of transistor to be protected. The (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed. Figure E9.16 Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements Ballast H.V. Stepup Transformer.1.15 µf K21F1 22 V / 2 V 5 / 5 6µH Metal Halide Lamp.22.33µF 5.6K 8.2K 5W Figure E9.17 Typical Metal Halide Ignitor Circuit E9 6 2 Littelfuse, Inc Thyristor Product Catalog

Kxxxzy SIDAC. Teccor brand Thyristors Standard Bidirectional SIDACs. Description

Kxxxzy SIDAC. Teccor brand Thyristors Standard Bidirectional SIDACs. Description Kxxxzy SIDAC Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance