Kxxx0yU SIDAC Series. Thyristors Standard Unidirectional SIDACs. RoHS. Description
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1 Standard Unidirectional SIDCs xxx0yu SIDC Series RoHS Description The SIDC is a silicon unilateral voltage triggered switch. Upon application of a voltage exceeding the SIDC breakover voltage point, the SIDC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device. SIDCs feature glass-passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Features Schematic Symbol Rectified C/DC Circuit Oriented Triggering Voltage of 75V to 260V RoHS Compliant pplications Suitable for capacitor-discharge HV generator circuit Electrical Specifications (T J = 25 C, unless otherwise specified Symbol Parameters Test Conditions min max Unit 0820yURP yURP yURP yURP yURP yURP V DRM Breakover/Trigger Voltage 400yURP yURP V 800yURP yURP yURP yURP yURP yURP yURP yURP yURP 90 00yURP yURP yURP 0 Repetitive Peak Off-state Voltage 400yURP 5 500yURP 20 V 800yURP yURP yURP yURP yURP yURP 220
2 Standard Unidirectional SIDCs Electrical Specifications (T J = 25 C, unless otherwise specified Symbol Parameters Test Conditions Min Max Unit I T(RMS On-state RMS Current 50/60Hz I DRM Repetitive Peak Off-state Current V = V DRM 50/60Hz Sine Wave 5 μ V TM Peak On-state Voltage I T =.2 V Dynamic Holding Current R L = 00Ω 50/60Hz Sine Wave 0 80 m R S ( V S Switching Resistance, R S = (I S I BO 50/60Hz Sine Wave 00 Ω I BO Breakover Current 50/60Hz Sine Wave 0 μ 0820yU~ T P =0μs 60Hz yU T =25C 5Hz 60 Peak Repetitive Pulse Current (refer to figure 5 050yU~ T I P =0μs 60Hz 20 TRM and figure yU T =25C 5Hz yU~ T P =0μs 60Hz yU T =35C 5Hz 280 I TSM Peak Non-repetitive Surge Current 60Hz 20 Single Cycle (refer to figure 4 50Hz 6.7 di/dt Critical Rate of Rise of On-state Current 50 /μs dv/dt Critical Rate of Rise of Off-state Voltage 500 V/μs T S Storage Temperature Range C T J Junction Temperature Range 0820yU~2000yU yU~2500yU C R θjl Thermal Resistance, Junction to Lead DO DO-5 8 C/W Figure : V-I Characteristics Figure 2: On-state Current vs. On-state Voltage (Typical +I 9 V DRM V S -V (V R BO -V S S = (I S -I BO V T I DRM I BO I S +V Instantaneous On-state Current (i T mps I T I Instantaneous On-state Voltage (v T Volts 2
3 Standard Unidirectional SIDCs Figure 3: Power Dissipation vs. On-state Current (Typical Figure 4: Peak Non-repetitive Surge Current (I TSM vs. Number of Cycles verage On-state Power Dissipation [P D(V ] - Watts RMS On-state Current [I T(RMS ] - mps Peak Surge (Non-repetitive On-state Current (I TSM mps 00 0 SUPPLY FREQUENCY: Sinusoidal LOD: Resistive RMS ON-STTE CURRENT: I T RMS Maximum Rated Value at Specified Junction Temperature Notes: Blocking capability may be lost during and immediately following surge current interval. 2 Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration -- Full Cycles Figure 5: Repetitive Peak On-state Current(ITRM vs. Pulse Width at Various Frequencies of 0820yU/0900yU Figure 6: Repetitive Peak On-state Current (ITRM vs. Pulse Width at Various Frequencies of 050yU~2500yU Repetitive Peak On-State Current (I TRM - mps di/dt Limit Line t O /f 20 Hz 5 Hz khz 5 khz Pulse Base Width (t O - us I TM Repetitive Peak On-State Current (I TRM - mps di/dt Limit Line t O /f 5 Hz 20 Hz khz 5 khz Pulse Base Width (t O - us I TM Figure 7: Normalized Change vs. Junction Temperature Figure 8: Normalized DC Holding Current vs. Junction Temperature 0% 8% 2200yU~2500yU 2.0 Change -- % 6% 4% 2% 0% -2% -4% -6% 2000yU xx0yu 0xx0yU Ratio of / (T J = 25 C % Junction Temperature (T J -- C Junction Temperature (T J -- C 25 3
4 Standard Unidirectional SIDCs Figure 9: Maximum llowable Case Temperature vs. RMS On-State Current Figure 0: Maximum llowable mbient Temperature vs. RMS On-State Current Maximum llowable Lead/Case Temperature (TC - C SU~ 2500SU 0820SU~ 2000SU 2200GU~ 2500GU 0820GU~ 2000GU Maximum llowable mbient Temperature (T - C GU~ 2000GU 2200GU~ 2500GU 0820SU~ 2000SU CURRENT WVEFORM : Sinusoidal - 60Hz LOD: Resistive or Inductive FREE IR RTING 2200SU~ 2500SU RMS On-State Current [I T(RMS ] - mps RMS On-State Current [I T(RMS ] - mps Figure : Normalized Repetitive Peak Breakover Current (I BO vs. Junction Temperature Figure 2: Dynamic Holding Current Test Circuit for SIDCs 0 Push to test Repetitive Peak Breakover Current (I BO Multiplier V ac I P 00 Ω % Scope Device Under Test Trace Stops Junction Temperature (T J -- C Scope Indication Figure 3: Basic SIDC Circuit Figure 4: Relaxation Oscillator Using a SIDC (a Circuit (b Waveforms R SIDC V C V DC(IN V B0 V C Vac Load C I L R L I L t Conduction ngle R max R min V IN - I BO V IN - V TM (MIN t 4
5 Temperature Thyristors Standard Unidirectional SIDCs Figure 5: Low-voltage Input Circuit for Gas Ignition Figure 6: Comparison of SIDC versus SCR for Gas Ignitor Circuit 0 µf V 4.7 µf V µf 00 V 4.7 k ½ W.2 µf 200EyU Sidac 200 V V ac SCR Sidac V ac 24 V ac H.V. Ignitor Figure 7: SIDC Circuit for High-power Igniter Figure 8: SIDC Circuit for Gas Ignition 2200yU 0.47 µf kω 500yU C 240V kω 2.2 µf 2.2MΩ Soldering Parameters Reflow condition Pb - Free assembly - Temperature Min (T s(min 50 C Pre Heat - Temperature Max (T s(max 200 C - Time (min to max (t s secs verage ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate Reflow - Temperature (T L (Liquidus 27 C - Time (t L seconds Peak Temperature (T P 260+0/-5 C Time within 5 C of actual peak Temperature(t p seconds T P T L T S(max T S(min 25 t S Ramp-up Preheat time to peak temperature t P t L Ramp-down Time Ramp-down Rate Time 25 C to peak Temperature(T p 8 minutes max Do not exceed 280 C 5
6 Temperature Thyristors Standard Unidirectional SIDCs Flow Soldering (Solder Dipping Wave soldering condition Pb - Free assembly t P Pre Heat - Temperature Min 40 C - Temperature Max 60 C Time to Pre-Heat Temp seconds T P Ramp-up verage ramp up rate to Pre-Heat Temp Peak Temperature 260+0/-5 C verage ramp up rate (Tpre-heat to Tp Time within actual peak Temperature Max 6 seconds Ramp-down Rate T S Ramp Down Pre-heat time to peak temperature Time (t Physical Specifications Terminal Finish Body Material Lead Material Design Considerations 00% Matte Tin Plated UL recognized epoxy meeting flammability classification 94V-0 Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Overheating and surge currents are the main killers of SIDCs. Correct mounting, soldering, and forming of the leads also help protect against component damage. Reliability/Environmental Tests Test High Temperature Voltage Blocking Temperature Cycling Biased Temperature & Humidity High Temp Storage Low-Temp Storage Thermal Shock Resistance to Solder Heat Specifications and Conditions MIL-STD-750: Method 040, Condition Rated V DRM (Rectified VC-peak, T J, 504 hours MIL-STD-750: Method C to 50 C, 5-minute dwell, 00 cycles EI/JEDEC: JESD % min (V DC, 85 C, 85%RH, 008 hours MIL-STD-750: Method C, 008 hours -40 C, 008 hours MIL-STD-750: Method C to 00 C, 5-minute dwell, 0-second transfer, 0 cycles MIL-STD-750: Method C, 0 seconds Solderability NSI/J-STD-002: Category 3 Lead Bend MIL-STD-750: Method 2036, Condition E 6
7 Standard Unidirectional SIDCs Dimensions DO-24C (SM Dimensions Inches Millimeters Min Max Min Max C B B C D D E J F G L H E F G H I J I L Dimensions DO-5 Solder Pads (all dimensions in mm Temperature Measuring Point D Dimension Inches Millimeters Max Max Min Max C B B C D Product Selector Part Number Switching Voltage Range Blocking Voltage Packages Minimum Maximum V DRM DO-5 DO yURP GURP 0820SURP 0900yURP GURP 0900SURP 050yURP GURP 050SURP 00yURP GURP 00SURP 200yURP GURP 200SURP 300yURP GURP 300SURP 400yURP GURP 400SURP 500yURP GURP 500SURP 800yURP GURP 800SURP 2000yURP GURP 2000SURP 2200yURP GURP 2200SURP 2300yURP GURP 2300SURP 2400yURP GURP 2400SURP 2500yURP GURP 2500SURP 7
8 Thyristors Standard Unidirectional SIDCs Packing Options Part Number Marking Weight Package Mode Packages Base Quantity xxx0surp xxx 0.062g Reel Pack DO-24C 5000 xxx0gurp xxx 0.38g Reel Pack DO Part Numbering System xxx 0 S U RP Part Marking System DO-5 DEVICE TYPE : Sidac PCGING OPTION RP: Tape and Reel 05 DO-24C MEDIN VOLTGE 082: 75V~ 90V 090: 79V~ 97V 05: 95V~0V 0: 04V~8V 20: 0V~25V 30: 20V~38V 40: 30V~46V 50: 42V~57V 80: 67V~83V 200: 90V~20V 220: 20V~230V 230: 220V~240V 240: 230V~250V 250: 240V~260V UNIDIRECTIONL PCGE TYPE S: DO-24C package G: DO-5 package CONSTRUCTION VRIBLE 0: Single chip SIDC YMXXX 05 YMXXX Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code Tape and Reel Specification DO-24C 0.57 ( (2.0 Cathode 0.57 ( DI (.5 Cover tape 0.80 (20.2 rbor Hole Dia. 3.0 (330 Dimensions are in inches (and millimeters (2.5 Direction of Feed 8
9 Standard Unidirectional SIDCs DO-5 Reel Pack (RP Specifications Meets all EI RS-296 Standards DO ( ( (80.0 TYP ( (22.8 Dimensions are in inches (and millimeters. Direction of Feed 0.97 (5.0 9
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6 PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER EL303X, EL304X, EL306X, EL308X Series
Schematic 1 6 2 5 Features: 3 Zero Crossing Circuit 4 Peak breakdown voltage - 250V: EL303X - 400V: EL304X - 600V: EL306X - 800V: EL308X High isolation voltage between input and output (Viso=5000 V rms
SMF4L Series. TVS Diodes Surface Mount 400W > SMF4L Series. Description. Uni-directional
SMF4L Series RoHS Pb e3 Uni-directional Description The SMF4L series of SOD-123FL small and flat lead lowprofile plastic package is designed specifically to protect sensitive electronic equipment from
Triacs. ( Amps) Features
Selected Packages* U.L. RECOGNIZED File #E71639 THERMOTAB TO-22AB TO - 92 TO-22AB G Triacs (.8 25 ) 2 General Description These gated triacs from Teccor Electronics are part of a broad line of bidirectional
4 PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER ELT304X, ELT306X, ELT308X Series
Schematic Features: Peak breakdown voltage - 400V: ELT304X - 600V: ELT306X - 800V: ELT308X High isolation voltage between input and output (Viso=5000 V rms ) Zero voltage crossing Pb free and RoHS compliant.
Surface Mount Transient Voltage Suppressors (TVS)
Description The 1.5SMC series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Uni-directional
6 PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER EL301X, EL302X, EL305X Series
6 PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER Schematic 1 6 2 5 Features: Peak breakdown voltage - 250V: EL301X - 400V: EL302X - 600V: EL305X High isolation voltage between input and output (Viso=5000
MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description
MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
SMF Series. Transient Voltage Suppression Diodes. Surface Mount 200W > SMF Series. Description. Uni-directional
SMF Series RoHS Pb e3 Uni-directional Description The SMF series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage
MCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description
MCR12DSM, MCR12DSN Thyristors Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive
POW-R-BLOK TM Dual SCR Isolated Module 500 Amperes / Up to 1600 Volts. LD43 50 Dual SCR POW-R-BLOK TM Module 500 Amperes / Volts
mperes / Up to 16 Volts R OUTLINE DRWING B C J F 1 3 L H Q - DI. (4 TYP.) P - M1 THD (3 TYP.) T - (4 TYP.) S 4 7 5 6 E K M G D LD43 5 Dual SCR Module mperes / 8-16 Volts LD43 Outline Dimensions Dimension
4 PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER ELT304X, ELT306X, ELT308X Series
Schematic Features: Peak breakdown voltage - 400V: ELT304X - 600V: ELT306X - 800V: ELT308X High isolation voltage between input and output (Viso=5000 V rms ) Zero voltage crossing Pb free and RoHS compliant.
Transient Voltage Suppression Diodes Axial Leaded 500W > SA series
Axial Leaded 5W > SA series RoHS b Description The is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Agency
BTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
Transient Voltage Suppression Diodes Surface Mount 600W > TPSMA6L Series 3 W 60 A 3.5V V. -65 to 150 C 35 C/W 200 C/W. Anode
Surface Mount 6W > RoHS Description Uni-directional The is designed specifically to protect sensitive electronic equipment from voltage transients induced by load dump and other transient voltage events,
30KPA-HRA Series. Transient Voltage Suppression Diodes Axial Leaded 30000W > 30KPA-HRA series. Descriptios. Uni-directional
3KPA-HRA Series RoHS Pb e3 AGENCY Uni-directional Agency Approvals Parameter Symbol Value Unit Peak Pulse Power Dissipation by /μs Test Waveform (Fig.2) (Note ) P PPM 3 W Steady State Power Dissipation
5KP-HRA Series. Transient Voltage Suppression Diodes Axial Leaded 5000W > 5KP-HRA series. Description. Uni-directional
5KP-HRA Series RoHS Pb e3 AGENCY Uni-directional Agency Approvals AGENCY FILE NUMBER E28662/E2353 Parameter Symbol Value Unit Peak Pulse Power Dissipation by /μs Test Waveform (Fig.2) (Note ) P PPM 5 W
MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
Schottky Barrier Rectifiers
Schottky Barrier Rectifiers FEATURES Guardring for overvoltage protection Very small conduction losses Extremely fast switching Low forward voltage drop DO-204AL (DO-4) High frequency operation Solder
General Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-4AL (DO-4) MAJOR RATINGS AND CHARACTERISTICS I F(AV).0 A V RRM V to 00 V I FSM (8.3 ms sine-wave) A I FSM (square wave t p = ms) 45 A V F. V I R 5.0
MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
MCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
Triacs. (0.8 A to 35 A) Features. Compak Package. General Description
* Selected Packages U.L. RECONIZED File #E71639 E2 TO-92 TO-22 *TO-22 3-lead Compak TO-263 D 2 Pak TO-252 D-Pak *TO-3 Fastpak TO-251 V-Pak (.8 A to 35 A) RoHS E2 eneral Description These gated triacs from
DSLP Series - SOT23-6
DSLP Series - SOT23-6 RoHS Pb e3 Description Agency Approvals Agency Agency File Number E133083 This new DSLP Series provides overvoltage protection for applications such as HD-SDI, HD-CVBS, ADSL, ADSL2,
7PIN DIP PHOTO POWER TRIAC PHOTOCOUPLER ELRX223 Series
Features Low trigger current T 10mA Peak off state voltage 600V Load current 0.3,0.6,0.9,1.2A Wide operating temperature range of -40 C to 85 C High isolation voltage between input and output (Viso=5000
P-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
MCR218-2G, MCR218-4G, MCR218-6G
MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
C122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
POW-R-BLOK TM Dual SCR Isolated Module 150 Amperes / Up to 1600 Volts. CD63 15A Dual SCR Isolated POW-R-BLOK TM Module 150 Amperes / Up to 1600 Volts
CD63 15 15 mperes / Up to 16 B G "J" (3) OUTLINE DRWING D E F F 7 6 1 2 3 5 4 M F "K" (2) S Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated
Transient Voltage Suppressors (TVS) Data Sheet
Transient Suppressors (TVS) Data Sheet Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent
LCE Series. Transient Voltage Suppression Diodes. Axial Leaded 1500W > LCE series. Description. Uni-directional
Transient Suppression Diodes LCE Series RoHS Pb e3 Uni-directional Description The LCE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning
SP4040 Series 3.3V 75A Rail Clamp Array
3.3V 7A Rail Clamp Array RoHS Pb GREEN Description The SP4040 provides overvoltage protection for applications such as 0/00/000 Base-T Ethernet and T3/ E3 interfaces. This device has a low capacitance
MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate