Thyristors 30 / 35 Amp Alternistor (High Commutation) Triacs
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1 Qxx30xHx & Qxx35xHx Series RoHS Description The 30 mp / 35 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from C line. lternistor type devices only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability. Features & Benefits gency pproval gency gency File Number E71639 (L Package and 30 only) RoHS Compliant Glass passivated junctions Voltage capability up to 800V Surge capability up to 350 at 60 Hz half cycle L-Package isolation rating of 2500V rms Main Features Symbol Value Unit I T(RMS) 30 or 35 V DRM /V RRM 400 or 600 V I GT (Q1) 25 or 50 m Schematic Symbol pplications Excellent for C switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are C solid-state switches, industrial power tools, exercise equipment, white goods and commercial appliances. lternistor Triacs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. G dditional Information Datasheet Resources Samples
2 bsolute Maximum Ratings lternistor Triac (3 Quadrants) Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx35RH5/Qxx35NH5 T C = 90 C 35 Qxx30LH5/Qxx30LH3 T C = 50 C 30 I TSM Non repetitive surge peak on-state current (full cycle, T J initial = 25 C) f = 50 Hz t = 20 ms 290 f = 60 Hz t = 16.7 ms 350 I 2 t I 2 t Value for fusing t p = 8.3 ms s di/dt Critical rate of rise of on-state current (I G = 200m with 0.1µs rise time) f = 120 Hz T J = 125 C 100 /μs I GTM Peak gate trigger current t p 10 μs I GT I GTM T J = 125 C 2 P G(V) verage gate power dissipation T J = 125 C 0.5 W T stg Storage temperature range -40 to 125 C T J Operating junction temperature range -25 to 125 C Electrical Characteristics (T J = 25 C, unless otherwise specified) lternistor Triac (3 Quadrants) Symbol Test Conditions Quadrant Qxx35RH5 Qxx35NH5 Qxx30LH3 Unit Qxx30LH5 I GT V D = 12V R L = 30 Ω I II III MX m V GT V D = 12V R L = 30 Ω I II III MX. 2 2 V V GD V D = V DRM R L = 3.3 kω T J = 125 C I II III MIN V I H I T = 400m MX m dv/dt V D = V DRM Gate Open T J = 125 C 400V MIN. 600V V/μs (dv/dt)c (di/dt)c = 18.9 /ms T J = 125 C MIN V/µs t gt Note: xx = voltage/10 35 device I G = 2 x I GT PW = 15µs I T = 49.5(pk) 30 device I G = 2 x I GT PW = 15µs I T = 42.4(pk) TYP. 3 3 µs
3 Static Characteristics Symbol Test Conditions Value Unit MX. V TM 35 device I TM = 49.5 t p = 380 µs 30 device I TM = 42.4 t p = 380 µs V Qxx35R/NH5 I DRM V I D = V DRM / V RRM Qxx30LH5 RRM Qxx30LH3 T J = 25 C V 10 μ MX. T J = 125 C V 2 m Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) Qxx35RH5 / Qxx35NH Qxx30LH5 / Qxx30LH R θ(j-) Junction to ambient Qxx35RH5 45 Qxx30LH5 / Qxx30LH3 50 C/W Note: xx = voltage/10 Figure 1: Definition of Quadrants Figure 2: Normalized DC Gate Trigger Current for ll Quadrants vs. Junction Temperature LL POLRITIES RE REFERENCED TO POSITIVE (Positive Half Cycle) I GT - (-) I GT GTE REF QII QIII QI QIV (+) I GT GTE REF + I GT Ratio of I GT /I GT (T J = 25 C) (-) I GT GTE (+) I GT GTE REF NEGTIVE (Negative Half Cycle) REF NOTE: lternistors will not operate in QIV Note: lternistors will not operate in QIV Junction Temperature - C +125
4 Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: Normalized DC Gate Trigger Voltage for ll Quadrants vs. Junction Temperature Ratio of I IH /I IH (T j =25 C) Ratio of V GT /V GT (T j =25 C) Junction Temperature - C Junction Temperature - C +125 Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. On-State Current verage On-State Power Dissipation [P D (V) ] - Watts Max llowable Case Temperature (T C ) - C Qxx30LH5 Qxx30LH3 Qxx35P5 Qxx35RH5 Qxx35NH RMS On-State Current [I T(RMS) ] - MPS RMS On-State Current [I T(RMS) ] - MPS Note: xx = voltage Figure 7: On-State Current vs. On-State Voltage (Typical) 90 Positive or Negative Instantaneous On-State Current (I T ) - MPS T C = 25 C Positive or Negative Instantaneous On-State Voltage (V T ) - Volts
5 Temperature Thyristors Figure 8: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-State Current (I TSM ) mps Qxx35RH5 Qxx35NH5 Qxx35P5 Qxx30LH5 Qxx30LH Surge Current Duration Full Cycles Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State [I T(RMS) ]: Max Rated Value at Specific Case Temperature Notes: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value. Note: xx = voltage Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Time (min to max) (t s ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C
6 Physical Specifications Environmental Specifications Terminal Finish Body Material Terminal Material Design Considerations 100% Matte Tin-plated. UL Recognized epoxy meeting flammability classification 94V-0. Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Thermal Shock utoclave Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 125 C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150 C 1008 hours; -40 C MIL-STD-750, M cycles; 0 C to 100 C; 5-min dwelltime at each temperature; 10 sec (max) transfer time between temperature EI / JEDEC, JESD hours (121 C at 2 TMs) and 100% R/H MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab Common with Center Lead E B C D T C MESURING POINT O P RE (REF.) 0.17 in Dimension Inches Millimeters Min Max Min Max B C D E G F L H R NOTCH IN GTE LED TO ID. NON-ISOLTED TB F G H J K K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). L M N O P R
7 Dimensions TO-220B (L-Package) Isolated Mounting Tab E T C MESURING POINT RE (REF.) 0.17 in 2 O P Dimension Inches Millimeters Min Max Min Max B C D B C D E F F G G L H R H J K K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). L M N O P R Dimensions TO-263 (N-Package) D 2 Pak Surface Mount B V T C MESURING POINT C E RE: 0.11 IN 2 Dimension Inches Millimeters Min Max Min Max B S C W U D GTE K J E G D F H F G H J K S V U W
8 Product Selector Part Number Voltage Gate Sensitivity Quadrants 400V 600V 800V I II III IV I T(RMS) Type Package Qxx35RH5 X X 50 m 35 lternistor Triac TO-220R Qxx35NH5 X X 50 m 35 lternistor Triac TO-263 D 2 -PK Qxx30LH5 X X 50 m 30 lternistor Triac TO-220L Qxx30LH3 X X 25 m 30 lternistor Triac TO-220L Note: xx = Voltage/10
9 Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx35RH5TP Qxx35RH g Tube 500 (50 per tube) Qxx35NH5TP Qxx35NH g Tube 500 (50 per tube) Qxx35NH5RP Qxx35NH g Embossed Carrier 500 Qxx30LH5TP Qxx30LH g Tube 500 (50 per tube) Qxx30LH3TP Qxx30LH g Tube 500 (50 per tube) Note: xx = Voltage TO-263 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards 0.63 (16.0) (4.0) DI (1.5) Gate (24.0) (21.0) * * Cover tape (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (25.7) Direction of Feed Part Numbering System Part Marking System Q R P H5 5 COMPONENT DEVICE TYPE Q : Triac or lternistor Triac VOLTGE 40 : 400V 60 : 600V 80 : 800V CURRENT 30 : : 35 SENSITIVITY & TYPE Standard Triac 5 : 50m (QI, II, III) lternistor Triac H5 : 50m (QI, II, III) H3 : 25m (QI, II, III) PCKGE TYPE L : TO-220 Isolated R : TO-220 Non-Isolated N : TO-263 (D 2 -PK) P : FSTPK
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More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. BTA16, BTB16 and T16 Series SNUBBERLESS, LOGIC LEVEL & STANDARD 16A TRIACS
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5 mperes / Up to Volts B G "J" () OUTLINE DRWING D E F F 6 7 4 5 M "K" () R S Description: Powerex SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging.
More informationADV. ADV Scan the QR code to view the latest product information ADS12C60F/80F. 3 Quadrants Triacs. General Description. Features
3 Quadrants Triacs General Description High current density due to mesa technology.the DS12C triac series is suitable for general purpose C switching. They can be used as an ON/OFF function in applications
More informationT1235H, T1250H. High temperature 12 A Snubberless Triacs. Features. Applications. Description
High temperature 12 A Snubberless Triacs Features Medium current Triac 150 C max. T j turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability G A1 Packages
More informationACST1635-8FP. Overvoltage protected AC switch. Description. Features. Applications
Overvoltage protected AC switch Description Datasheet production data Features OUT COM TO-220FPAB Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against
More informationMAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
More informationPLEDxN Series. PLED Open LED Protectors PLEDxN Series. RoHS. Description
RoHS Description The open LED protector provides a switching electronic shunt path when a single LED in an LED string fails as an open circuit. This ensures the entire LED string will continue to function
More informationACST6. Overvoltage protected AC switch. Applications. Description. Features. Benefits
Overvoltage protected AC switch Datasheet - production data OUT TO-220AB ACST610-8T OUT Features COM G OUT COM D²PAK ACST610-8G TO-220FPAB ACST610-8FP Figure 1. Functional diagram G G OUT COM OUT I²PAK
More informationPLEDxUSW Series, Unidirectional, White DO-214AA
PLEDxUSW Unidirectional Series PLEDxUSW Series, Unidirectional, White DO-214AA RoHS Description Agency Approvals Agency Agency File Number E133083 The PLEDxUSW open LED protectors provide an electronic
More informationBTA/BTB12 and T12 Series
SNUBBERLESS, LOIC LEVEL & STANDARD 1A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 1 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 to 5 ma DESCRIPTION Available either in through-hole or surface-mount packages,
More informationFeatures. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.
Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching
More informationACS1026T. AC switch family Transient protected AC switch (ACS ) Main product characteristics OUT COM TO-92 SO-8 ACS102-6T1 ACS102-6T1-TR.
AC switch family Transient protected AC switch (ACS ) Main product characteristics Overvoltage protection by crowbar technology High noise immunity - static dv/dt > 300 V/µs Applications AC ON/OFF static
More informationPLED Unidirectional Series (PLEDxUx)
(PLEDxUx) PLED Open LED Protectors Agency Approvals Agency Agency File Number E133083 Description The (PLEDxUx Series) open LED protectors provide an electronic switching shunt path around a single LED
More informationT2550H-600T 25A TRIACS MAIN FEATURES:
SNUBBERLESS HIGH TEMPERATURE 25A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 25 A V DRM /V RRM 600 V I GT (Q1 ) 50 ma DESCRIPTION Specifically designed for use in high temperature environment (found
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Snubberless 16 A Triac Datasheet production data Features High static and dynamic commutation Three quadrants Snubberless device Package is RoHS (2002/95/EC) compliant Tab insulated, voltage = 2500 V rms
More informationMCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
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High temperature 16 A Snubberless Triacs Datasheet - production data D²PAK T16xxH-6G Features G A1 A1 G TO-220AB insulated T16xxH-6I Medium current Triac 150 C max. T j turn-off commutation Low thermal
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MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
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8 A Snubberless Triac Datasheet - production data Features High static dv/dt High dynamic commutation 150 C maximum Tj Three quadrants Built-in ceramic for tab insulation Compliance to UL1557 standard
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3 Quadrants Triacs General Description High current density due to mesa technology. the DT4C triac series is suitable for general purpose C switching. They can be used as an ON/OFF function in applications
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Datasheet 3 A - 8 V TO-22AB insulated H-series Snubberless Triac G A2 A1 Features 3 A high current Triac 8 V symmetrical blocking voltage 15 C maximum junction temperature T j Three triggering quadrants
More informationBTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
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T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
More informationTN1610H-6T. High temperature 16 A SCRs. Description. Features. Applications
High temperature 16 A SCRs Datasheet production data Description Thanks to a junction temperature T j up to 150 C and a non-isolated TO-220 package, the TN1610H-6T offers high thermal performance operation
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BTA4 and BTA/BTB41 Series STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41
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More informationObsolete Product(s) - Obsolete Product(s)
Snubberless high temperature 20 A Triacs Main features Symbol Value Unit I T(RMS) 20 A V DRM /V RRM 600 V I GT (Q1) 35 ma T j MAX 150 C Description Specifically designed to operate at 150 C, the new 20
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MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
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More information7PIN DIP PHOTO POWER TRIAC PHOTOCOUPLER ELRX223 Series
Features Low trigger current T 10mA Peak off state voltage 600V Load current 0.3,0.6,0.9,1.2A Wide operating temperature range of -40 C to 85 C High isolation voltage between input and output (Viso=5000
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BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
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BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
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Schematic 1 6 2 5 Features: 3 Zero Crossing Circuit 4 Peak breakdown voltage - 250V: EL303X - 400V: EL304X - 600V: EL306X - 800V: EL308X High isolation voltage between input and output (Viso=5000 V rms
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CD63 15 15 mperes / Up to 16 B G "J" (3) OUTLINE DRWING D E F F 7 6 1 2 3 5 4 M F "K" (2) S Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated
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