Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs. Qxx25xx & Qxx25xHx Series. Description
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1 Qxx25xx & Qxx25xHx Series RoHS escription This 25 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard alternistor triac components operate with in-phase signals in Quadrants I or III and ONLY unipolar negative gate pulses for Quadrant II or III. The alternistor triac will not operate in Quadrant IV. Features & Benefits gency pproval gency gency File Number RoHS compliant lass passivated junctions Voltage capability up to 1000 V Surge capability up to 250 at 60 Hz half cycle TO-220L, TO-218K, TO-218J pplications Main Features Symbol Value Unit I T(RMS) 25 RM /V RRM 1000 V I T 50 or 80 m Schematic Symbol Excellent for C switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are C solid-state switches, industrial power tools, exercise equipment, white goods and commercial appliances. lternistor Triacs (no snubber required) are used in applications with high inductive loads requiring the highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. dditional Information MT2 MT1 atasheet Resources Samples
2 bsolute Maximum Ratings Standard Triac I T(RMS) I TSM I 2 t Symbol Parameter Test Conditions Value Unit RMS on-state current Peak non-repetitive surge current I 2 t Value for fusing T C = 85 C 25 full cycle; f = 50Hz; (initial) = 25 C full cycle; f = 60Hz; (initial) = 25 C t p = 8.3ms s di/dt Critical rate-of-rise of on-state current f = 60Hz; =125 C 100 /μs I TM Peak gate current = 125 C 2 P (V) verage gate power dissipation = 125 C 0.5 W T stg Storage temperature range -40 to 125 C Operating junction temperature range -40 to 125 C bsolute Maximum Ratings lternistor Triac I T(RMS) I TSM Symbol Parameter Test Conditions Value Unit RMS on-state current Peak non-repetitive surge current Qxx25LH5 Qxx25L6 Qxx25K6 Qxx25J6 Qxx25RH5 Qxx25R6 Qxx25NH6 full cycle; f = 50Hz; (initial) = 25 C full cycle; f = 60Hz; (initial) = 25 C T C = 65 C T C = 85 C T C = 95 C 25 I 2 t I 2 t Value for fusing t p = 8.3ms s di/dt Critical rate-of-rise of on-state current f = 60Hz; =125 C 100 /μs I TM Peak gate current = 125 C 2 P (V) verage gate power dissipation = 125 C 0.5 W T stg Storage temperature range -40 to 125 C Operating junction temperature range -40 to 125 C Note: xx = voltage/
3 Electrical Characteristics ( = 25 C, unless otherwise specified) Standard Triac Value Symbol Test Conditions Quadrant Unit I T = 12V; R L = 60 Ω I II III MX. 50 IV TYP. 120 m V T = 12V; R L = 60 Ω I II III MX. 1.3 IV TYP. 2.5 V V = RM ; R L = 3.3 kω ; = 125 C LL MIN. 0.2 V I H I T = 400m (initial) MX. 100 m 400V 275 dv/dt = RM ; ate Open; = 125 C 600V 225 MIN. 800V 200 V/μs = RM ; ate Open; = 100 C 1000V 200 (dv/dt)c (di/dt)c = 13.3 /ms; = 125 C MIN. 5 V/μs t gt I = 2 x I T ; PW = 15µs; I T = 35.4 TYP. 4 μs Electrical Characteristics ( = 25 C, unless otherwise specified) lternistor Triac Symbol Test Conditions Quadrant Qxx25RH5 Qxx25LH5 Value Qxx25R6 Qxx25L6 Qxx25NH6 Qxx25K6 Qxx25J6 I T = 12V; R L = 60 Ω I II III MX m V T = 12V; R L = 60 Ω I II III MX. 1.3 V V = RM ; R L = 3.3 kω ; = 125 C I II III MIN. 0.2 V I H I T = 400m (initial) MX m 400V V dv/dt = RM ; ate Open; = 125 C 600V MIN. V/μs 800V = RM ; ate Open; = 100 C 1000V 400 (dv/dt)c (di/dt)c = 13.3 /ms; = 125 C MIN V/μs t gt I = 2 x I T ; PW = 15µs; I T = 35.4 TYP. 3 5 μs Unit Static Characteristics Value Symbol Test Conditions Qxx25xH5 Unit Qxx25x6 Qxx25NH6 V TM I T = 35.4; t p = 380 μs MX. 1.8 V I RM / I RRM RM / V RRM Note: xx = voltage/10, x = package = 25 C = 100 C V V V MX V 1000 = 125 C V 2000 μ
4 Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) / Qxx25R6 / Qxx25NH6 Qxx25RH5 / 0.89 Qxx25L6 / Qxx25LH5 2.0 Qxx25K6 / Qxx25J C/W R θ(j-) Junction to ambient Qxx25Ry 45 Qxx25L6 / Qxx25LH5 50 C/W Note: xx = voltage/10, y = sensitivity Figure 1: Normalized C ate Trigger Current vs. Junction Temperature Figure 2: Normalized C ate Trigger Voltage vs. Junction Temperature Ratio of I T /I T ( = 25 C) Ratio of V T / V T ( = 25ºC) Junction Temperature ( ) -- ( C) Junction Temperature ( ) -- (ºC) Figure 3: Normalized C Holding Current vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Ratio of I H / I H ( = 25ºC) Junction Temperature ( ) -- (ºC) Instantaneous On-state Current (i T ) mps = 25 C Qxx25P5/Qxx25R6 Qxx25L6/Qxx25NH6 Qxx25K6/Qxx25J6 Qxx25RH5/Qxx25LH Instantaneous On-state Voltage (v T ) Volts
5 Figure 5: Power issipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. RMS On-State Current verage On-State Power issipation [P (V) ] -- Watts CURRENT WVEFORM: Sinusoidal LO: Resistive or Inductive CONUCTION NLE: RMS On-State Current [I T(RMS) ] -- mps Qxx25P5/Qxx25R6 Qxx25L6/Qxx25NH6 Qxx25K6/Qxx25J6 Qxx25RH5/Qxx25LH5 Maximum llowable Case Temperature (T C ) - C Qxx25L6 Qxx25LH5 Qxx25P5 Qxx25R6 Qxx25NH6 Qxx25RH5 Qxx25K6 Qxx25J6 CURRENT WVEFORM: Sinusoidal 60 LO: Resistive or Inductive CONUCTION NLE: RMS On-State Current [I T(RMS) ] - mps Figure 7: Maximum llowable mbient Temperature vs. RMS On-State Current (TO-220 packages only) Maximum llowable mbient Temperature (T ) -- C CURRENT WVEFORM: Sinusoidal LO: Resistive or Inductive CONUCTION NLE: 360 FREE IR RTIN RMS On-State Current [I T(RMS) ] -- mps Figure 8: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) mps Qxx25P5/Qxx25R6 Qxx25L6/Qxx25NH6 Qxx25K6/Qxx25J6 Qxx25RH5/Qxx25LH5 SUPPLY FREQUENCY: 60 Hz Sinusoidal LO: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. ate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current uration -- Full Cycles
6 Temperature Thyristors Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. o not exceed 280 C Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material esign Considerations 100% Matte Tin-plated UL Recognized epoxy meeting flammability rating V-0. Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. ood design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test High Temperature Voltage Blocking Temperature Cycling Biased Temp & Humidity High Temp. Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-ST-750: Method 1040, Condition Rated V RRM, 125 C, 1008 hours MIL-ST-750: Method C to 125 C, 15-minute dwell, 100 cycles EI/JEEC: JES VC, 85 C, 85%RH, 1008 hours MIL-ST-750: Method C, 1008 hours -40 C, 1008 hours MIL-ST-750: Method C, 10 seconds NSI/J-ST-002, Category 3, Test MIL-ST-750: Method 2036, Condition E
7 imensions TO-220B (R Package) Non-isolated Mounting Tab Ø E B C MT2 T C MESURIN POINT O P RE (REF.) 0.17 IN imension Inches Millimeters Min Max Min Max B C F L H R NOTCH IN TE LE TO I. NON-ISOLTE TB E F H K J MT1 MT2 TE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). J K L M N O P R imensions TO-220B (L Package) Isolated Mounting Tab Ø E T C MESURIN POINT RE (REF.) 0.17 IN 2 O P imension Inches Millimeters Min Max Min Max B C B C F E F L H R K J MT1 MT2 TE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm) H J K L M N O P R
8 imensions TO-263 (N Package) 2 Pak Surface Mount B MT2 V T C MESURIN POINT C E RE: 0.11 IN 2 imension Inches Millimeters Min Max Min Max B S C W U MT1 TE K J E H F F H J K S V U W imensions TO-218C (K Package) Isolated Mounting Tab T C Measurement Point B U (diameter) C imension Inches Millimeters Min Max Min Max F E W B C P MT1 MT2 R L K ate M Q N J Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). H E F H J K L M N P Q R U W
9 imensions TO-218X (J Package) Isolated Mounting Tab T c Measurement Point MT1 W T M N B Y K V L U (diameter) F E Z X J ate R S P MT2 C H Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). imension Inches Millimeters Min Max Min Max B C E F H J K L M N P R S T U V W X Y Z
10 Product Selector Part Number Voltage ate Sensitivity Quadrants 400V 600V 800V 1000V I - II - III IV Package X X X X 50 m 120 m (TYP) TO-220R X X X X 50 m 120 m (TYP) TO Pak Qxx25RH5 1 X X X 50 m TO-220R Qxx25LH5 X X X 50 m TO-220L X X X 50 m TO Pak Qxx25R6 X X X X 80 m TO-220R Qxx25L6 X X X X 80 m TO-220L Qxx25NH6 X X X X 80 m TO Pak Qxx25J6 X X X 80 m TO-218X Qxx25K6 X X X X 80 m TO-218C Packing Options Part Number Marking Weight Packing Mode Base Quantity TP 2.20g Tube 500 (50 per tube) TP 1.60g Tube 500 (50 per tube) RP 1.60g Embossed Carrier 500 Qxx25RH5TP Qxx25RH5 2.20g Tube 500 (50 per tube) Qxx25LH5TP Qxx25LH5 2.20g Tube 500 (50 per tube) TP 1.60g Tube 500 (50 per tube) RP 1.60g Embossed Carrier 500 Qxx25R6TP Qxx25R6 2.20g Tube 500 (50 per tube) Qxx25L6TP Qxx25L6 2.20g Tube 500 (50 per tube) Qxx25NH6TP Qxx25NH6 1.60g Tube 500 (50 per tube) Qxx25NH6RP Qxx25NH6 1.60g Embossed Carrier 500 Qxx25J6TP Qxx25J6 5.23g Tube 250 (25 per tube) Qxx25K6TP Qxx25K6 4.40g Tube 250 (25 per tube)
11 Thyristors TO-263 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards 0.63 (16.0) (4.0) ate I (1.5) MT1 / Cathode (24.0) (21.0) * * Cover tape MT2 / node (13.0) rbor Hole ia (330.0) imensions are in inches (and millimeters) (25.7) irection of Feed Part Numbering System Part Marking System COMPONENT EVICE TYPE TYPE Q: Triac or lternistor VOLTE RTIN 40: 400V 60: 600V 80: 800V K0: 1000V CURRENT RTIN 25: 25 Q N H6 SENSITIVITY Standard Triac 5: 50m lternistor H5: 50m 6: 80m H6: 80m PCKE TYPE L : TO-220B Isolated R : TO-220B Non-Isolated N : TO-263 ( 2 -Pak) K : TO-218C Isolated J : TO-218X Isolated P : Fastpak TO-220 B - (L and R Package) TO-263 B - (N Package) Q6025R5 YM ate Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code Fastpak - (P Package) TO-218C - (K Package) TO-218X - (J Package) Q6025K6 YMLXX ate Code Marking Y:Year Code M: Month Code L: Location Code XX: Lot Serial Code Q6025P5 YMXXX
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