Teccor brand Thyristors 16 Amp Standard SCR V DRM. Symbol Parameter Test Conditions Value Unit V DSM

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1 16 mp Standard SCR RoHS Description The Littelfuse SCR S8016x series are specifically designed for Electric Vehicle On-Board Charger (EVOBC) applications. This SCR C line input rectifier can handle Level 1 charging up to 16rms at 120V, and Level 2 charging up to 16 rms at 240V at 100 C and up to 25 rms for 80 C. Its excellent C handling capability and surge robustness makes this series an ideal switch for these input rectifiers. Features & Benefits Main Features Symbol Value Unit I T(RMS) 16 V DRM /V RRM 800 V I GT 50 m Schematic Symbol V DRM 800V, I T 25rms to handle input from V line C High di/dt of 375/μsec enables handling of 3k 8/20 surge current operationally High V DSM /V RSM of 1300V, high dv/dt of 2000V/ μsec prevents SCR mistriggering during 6kV 1.2/50-8/20 surge event with minimal over voltage protection or snubber circuit vailable in the compact TO-263 SMT package EC-Q101 Fully Compliant Halogen free and RoHS compliant K pplications Input rectification of C line input for EVOBC applications. G bsolute Maximum Ratings Symbol Parameter Test Conditions Value Unit V DSM /V RSM Peak non-repetitive blocking voltage Pw=100μs 1300 V I T(RMS) RMS on-state current T c =100 C 16 T c =80 C 25 I T(V) verage on-state current T C =100 C 10 T c =80 C 16 I TSM Peak non-repetitive surge current single half cycle; f=50hz; (initial)=25 C 188 single half cycle; f=60hz; (initial)=25 C 225 I 2 t I 2 t Value for fusing t p =8.3 ms s I PP Non-repetitive peak surge current with Littelfuse MOV V20E420UTO across line; = C, 11.2/50-8/20 combination 2400 wave, I T =1 di/dt Critical rate of rise of on-state current = C 375 /μs I GM Peak gate current = C 3.0 P G(V) verage gate power dissipation = C 0.6 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to C

2 16 mp Standard SCR Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Test Conditions Value Unit I GT V D =12V; R L =30Ω MIN. 15 MX. 50 V GT MX. 1.5 V V D =V DRM ; gate open; = C MIN V/μs dv/dt 1.2/50 pulse wave, with 250V C with Littelfuse MOV V20E420UTO across MIN. 5 KV/μs V GD V D =V DRM ; R L =3.3 kω; = C MIN. 0.2 V I H I T =400m (initial) MX. 150 m t q I T =0.5; t p =50µs; dv/dt=5v/µs; di/dt=-30/µs MX. 35 μs t gt I G =2 x I GT ; PW=15µs; I T =40 TYP. 2 μs m Static Characteristics Symbol Test Conditions Value Unit V TM I T =32; t p =380μs MX. 1.4 V I DRM / I V DRM / V RRM =25 C =100 C MX = C μ Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) 1.0 C/W Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature Figure 2: Normalized DC Gate Trigger Voltage vs. Junction Temperature Ratio of I GT / I GT ( = 25ºC) Ratio of V GT / V GT ( = 25ºC) Junction Temperature ( ) (ºC) Junction Temperature ( ) (ºC)

3 16 mp Standard SCR Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Ratio of I H / I H ( = 25ºC) Junction Temperature ( ) (ºC) Intantaneous On-state Current (i T ) mps 80 = 25 C Instantaneous On-state Voltage (v T ) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. RMS On-State Current verage On-State Power Dissipation [PD(V)] (Watts) RMS On-State Current [ IT(RMS) ]-(mps) Maximum llowable Case Temperature (T C ) - C CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: RMS On-State Current [I T(RMS) ] - mps Figure 7: Maximum llowable Case Temperature vs. verage On-State Current Maximum llowable Case Temperature (T C ) - C CURRENT WVEFORM: Sinusoidal 75 LOD: Resistive or Inductive CONDUCTION NGLE: verage On-State Current [I T(VE) ] - mps

4 Temperature Teccor brand Thyristors 16 mp Standard SCR Figure 8: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) mps SUPPLY FREQUENCY: 60 Hz Sinusoidal LOD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration -- Full Cycles Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 150 C Pb Free assembly T P t P Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) Ramp-up Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max - Temperature (T L ) (Liquidus) 217 C Reflow - Time (t L ) seconds Peak Temperature (T P ) /-5 C T S(min) 25 t S time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C

5 16 mp Standard SCR Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations 100% Matte Tin-plated UL Recognized epoxy meeting flammability rating V-0 Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling utoclave (Pressure Cooker Test) Biased Temperature & Humidity Intermittent Operational Life Resistance to Solder Heat Solderability Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C C for 1008 hours JESD ppendix 6-55 C to 150 C, 15-minute dwell, 1000 cycles EI/JEDEC: JESD C, 100%RH, 15psig, 96hours EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity T =25 C, ΔTJ 100 C, 1008hrs JESD22-111: 260 C, 10 seconds NSI/J-STD-002, category 3, Test Dimensions TO- 263B (N-package) D 2 -Pak Surface Mount B NODE V T C MESURING POINT C E RE: 0.11 in 2 Dimension Inches Millimeters Min Max Min Max W CTHODE G GTE D F S K H U J B C D E F G H J K S V U W

6 Teccor brand Thyristors 16 mp Standard SCR Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab Common with Center Lead E B C D NODE T C MESURING POINT O P RE (REF.) 0.17 IN Dimension Inches Millimeters Min Max Min Max B C D E G F L H R NOTCH IN GTE LED TO ID. NON-ISOLTED TB F G H J CTHODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K L M N O P R Part Marking System TO-220 B - (R Package) TO-263 (N Package) S8016R YM Part Numbering System DEVICE TYPE S: SCR S R VOLTGE RTING 80: 800V CURRENT RTING 16: 16 EC-Q101 QULIFIED PCKGE TYPE R: TO-220 Non-Isolated N: TO-263 Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code Packing Options Part Number Marking Weight Packing Mode Base Quantity Package S8016RTP S8016R 1.6g Tube 500 (50 per tube) TO-220R S8016NRP S8016N 1.6g Embossed Carrier 500 TO-263

7 16 mp Standard SCR TO-263 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards 0.63 (16.0) (4.0) DI (1.5) Gate Cathode (24.0) (21.0) * * Cover tape node (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (25.7) Direction of Feed