Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 75 C 0.8 A I T(AV) Average on-state current T C

Transcription

1 EC103xx & SxSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps of current as furnished by sense coils, proximity switches, and microprocessors. Features & Benefits RoHS compliant Glass passivated junctions Voltage capability up to 600 V Surge capability up to 20 Main Features Symbol Value Unit I T(RMS) 0.8 V DRM /V RRM 400 to 600 V pplications Typical applications are capacitive discharge systems for strobe lights and gas engine ignition. lso controls for power tools, home/brown goods and white goods appliances. I GT 12 to 500 μ dditional Information Schematic Symbol K Datasheet Resources Samples G bsolute Maximum Ratings Sensitive SCRs Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 75 C 0.8 I T(V) verage on-state current T C = 75 C 0.51 I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; (initial) = 25 C single half cycle; f = 60Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms s di/dt Critical rate of rise of on-state current f = 60 Hz ; = 110 C 50 /μs I GM Peak gate current = 110 C 1 P G(V) verage gate power dissipation = 110 C 0.1 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 110 C 16 20

2 Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol I GT Test Conditions SxS1 EC103X1 SxS2 EC103X2 Value SxS / 2N6565 EC103X SxS3 EC103X3 MX µ V D = 6V; R L = 100 Ω V GT MX. 0.8 V V GRM IRG=10u MIN 5 dv/dt V D = V DRM ; R GK = 1kΩ 400V MIN. 600V V GD V D = V DRM ; R L = 3.3 kω; = 110 C MIN V I H I T = 20m (initial), R GK = 1kΩ MX. 5 8 m t q (1) MX μs t gt I G = 2 x I GT ; PW = 15µs; I T = 1.6 TYP μs (1) I T =1; t p =50µs; dv/dt=5v/µs; di/dt=-5/µs Unit V/μs Static Characteristics Symbol Test Conditions Value Unit V TM I T = 1.2; t p = 380 µs MX. 1.7 V = 25 C 1 I DRM / I RRM V DRM = V RRM R GK = 1kΩ = 100 C MX. 50 = 110 C 100 μ Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) EC103xy/2N SxSy 60* R θ(j-) Junction to ambient EC103xy/2N C/W Notes: x = voltage, y = sensitivity * = Mounted on 1 cm 2 copper (two-ounce) foil surface C/W

3 Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature Figure 2: Normalized DC Gate Trigger Voltage vs. Junction Temperature Ratio of I GT /I GT ( = 25 C) Ratio of V GT / V GT ( = 25ºC) Junction Temperature ( ) -- ( C) Junction Temperature ( ) -- ( C) Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Ratio of I H / I H ( = 25 C) Junction Temperature ( ) -- ( C) Instantaneous On-state Current (i T ) mps 10 = 25 C Instantaneous On-state Voltage (v T ) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. RMS On-State Current verage On-State Power Dissipation [P D(V) ] - (Watts) RMS On-State Current [I T(RMS) ] - mps Maximum llowable Case Temperature (T C ) - C CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: RMS On-State Current [I T(RMS) ] - mps

4 Figure 7: Maximum llowable Case Temperature vs. verage On-State Current Figure 8: Maximum llowable mbient Temperature vs. RMS On-State Current Maximum llowable Case Temperature (T C ) - C CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: verage On-State Current [I T(VE) ] - mps Maximum llowable mbient Temperature (T ) - C CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 FREE IR RTING RMS On-State Current [I T(RMS) ] - mps Figure 9: Maximum llowable mbient Temperature vs. verage On-State Current Figure 10: Peak Capacitor Discharge Current Maximum llowable mbient Temperature (T ) - C CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 FREE IR RTING verage On-State Current [I T(VE) ] - mps Peak Discharge Current (I TM ) -mps I TRM t W 1 Hz 12 Hz 60 Hz Pulse Current Duration (t W ) - μs Figure 11: Peak Repetitive Sinusoidal Pulse Current 180 Peak Discharge Current (I TM ) - mps I TM t W 1 Hz 12 Hz 60 Hz Pulse Current Duration (t W ) - μs

5 Figure 12-1: Typical DC Gate Trigger Current with R GK vs. Junction Temprature for EC103M Figure 12-2: Typical DC Gate Trigger Current with R GK vs. Junction Temprature for EC103M1 Figure 13-1: Typical DC Holding Current with R GK vs. Junction Temprature for EC103M Figure 13-2: Typical DC Holding Current with R GK vs. Junction Temprature for EC103M1 Figure 14-1: Typical static dv/dt with R GK vs. Junction Temprature for EC103M Figure 14-2: Typical static dv/dt with R GK vs. Junction Temprature for EC103M1

6 Figure 15-1: Typical turn off time with R GK vs. Junction Temprature for EC103M Figure 15-2: Typical turn off time with R GK vs. Junction Temprature for EC103M1 Figure 16: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) mps SUPPLY FREQUENCY: 60 Hz Sinusoidal LOD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration -- Full Cycles

7 Temperature Thyristors Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations 100% Matte Tin-plated/Pb-free Solder Dipped UL recognized epoxy meeting flammability rating 94V-0 Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 110 C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150 C 1008 hours; -40 C MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E

8 Dimensions TO-92 (E Package) Cathode Gate T C Measuring Point B node E Dimension Inches Millimeters Min Max Min Max B D E F G H J K L M M L F D K J H G ll leads insulated from case. Case is electrically nonconductive. Dimensions Compak (C Package) T C / T L Temperature Measurement Point C B D M N Gate P Dimension Inches Millimeters Min Max Min Max B C node Cathode D E E (2.0) J (2.0) K H F (2.0) L G F G H J (1.0) K (2.8) (0.76) L Pad Outline Dimensions are in inches (and millimeters). M N P

9 Product Selector Voltage Part Number 400V 600V 800V 1000V Gate Sensitivity Type Package EC103 x 1 X X 12μ Sensitive SCR TO-92 EC103 x 2 X X 50μ Sensitive SCR TO-92 EC103 x X / 2N6565 X 200μ Sensitive SCR TO-92 EC103 x 3 X X 500μ Sensitive SCR TO-92 S x S1 X X 12μ Sensitive SCR Compak S x S2 X X 50μ Sensitive SCR Compak S x S X X 200μ Sensitive SCR Compak S x S3 X X 500μ Sensitive SCR Compak Note: x = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity EC103xy / 2N6565 EC103xy / 2N g Bulk 2000 EC103xyRP EC103xy 0.19 g Reel Pack 2000 EC103xyP EC103xy 0.19 g mmo Pack 2000 SxSyRP SxSy 0.08 g Embossed Carrier 2500 Note: x = Voltage, y = sensitivity TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EI-468-C Standards 1.6 (41.0) (6.0) 0.02 (0.5) (2.5) MX 1.26 (32.0) (18.0) (9.0) 0.5 (12.7) 0.1 (2.54) 14.17(360.0) Cathode node 0.2 (5.08) Gate DI (4.0) Flat up 1.97 (50.0) Direction of Feed Dimensions are in inches (and millimeters).

10 TO-92 (3-lead) mmo Pack (P) Radial Leaded Specifications Meets all EI-468-C Standards 1.62 (41.2) (18.0) (6.0) 0.02 (0.5) (9.0) 0.5 (12.7) Direction of Feed 0.1 (2.54) node Cathode 0.2 (5.08) Gate (2.5) MX DI (4.0) Flat down 1.27 (32.2) 25 Devices per fold 1.85 (47.0) 12.2 (310.0) 1.85 (47.0) Dimensions are in inches (and millimeters) (338.0) Compak Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards (4.0) node 0.47 (12.0) 0.36 (9.2) (8.0) Cathode Gate DI (1.5) Cover tape (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (12.4) Direction of Feed

11 Thyristors Part Numbering System (TO-92) DEVICE TYPE EC: TO-92 SCR 2N: JEDEC EC 103 D 1 75 Lead Form Dimensions xx: Lead Form Option Part Marking System TO-92 (E Package) EC103D1 YMLXX CURRENT RTING 103: 0.8 (TO-92) VOLTGE RTING D: 400V M: 600V (JEDEC) 6565: 400V SENSITIVITY & TYPE 1: 12 µ 2: 50 µ [blank]: 200µ 3: 500µ Date Code Marking Y:Year Code M: Month Code L: Location Code XX: Lot Serial Code Part Numbering System (Compak) Part Marking System (Compak) S 6 S 1 Compak (C Package) DEVICE TYPE S: Compak SCR VOLTGE RTING 4: 400V 6: 600V SENSITIVITY & TYPE 1: 12 µ 2: 50 µ [blank]: 200µ 3: 500µ CURRENT RTING S: 0.8 (Compak) S6S1 YMXXX Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code