Thyristor High Voltage Surface Mount Phase Control SCR, 10 A

Transcription

1 VS-SPbF Series Thyristor High Voltage Surface Mount Phase Control SCR, 0 2 TO-263 (D 2 PK) 3 2, node Cathode 3 Gate PRODUCT SUMMRY Package TO-263 (D 2 PK) Diode variation Single SCR I T(V) 6.5 V DRM /V RRM 800 V V TM <.5 V I GT 5 m T J -0 to +25 C FETURES Meets MSL level, per J-STD-020, LF maximum peak of 260 C Designed and qualified according JEDEC -JESD 7 Material categorization: for definitions of compliance please see PPLICTIONS Input rectification (soft start) Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-SPbF high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 25 C junction temperature. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE RIDGE THREE-PHSE RIDGE UNITS NEM FR- or G-0 glass fabric-based epoxy with oz. (0 μm) copper luminum IMS, R thc = 5 C/W luminum IMS with heatsink, R thc = 5 C/W Note T = 55 C, T J = 25 C, footprint 300 mm 2 MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS VLUES UNITS I T(V) Sinusoidal waveform 6.5 I RMS 0 V RRM /V DRM 800 V I TSM 0 V T 6.5, T J = 25 C.5 V dv/dt 50 V/μs di/dt 00 /μs T J Range -0 to +25 C VOLTGE RTINGS PRT NUMER V RRM, MXIMUM PEK REVERSE VOLTGE V V DRM, MXIMUM PEK DIRECT VOLTGE V I RRM /I DRM T 25 C m VS-SPbF Revision: 08-Jul-5 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

2 VS-SPbF Series SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum average on-state current I T(V) 6.5 T C = 2 C, 80 conduction half sine wave Maximum RMS on-state current I T(RMS) 0 Maximum peak, one-cycle, 0 ms sine pulse, rated V RRM applied, T J = 25 C 95 I TSM non-repetitive surge current 0 ms sine pulse, no voltage reapplied, T J = 25 C 0 0 ms sine pulse, rated V RRM applied, T J = 25 C 5 Maximum I 2 t for fusing I 2 t 0 ms sine pulse, no voltage reapplied, T J = 25 C 6 2 s Maximum I 2 t for fusing I 2 t t = 0. ms to 0 ms, no voltage reapplied, T J = 25 C 60 2 s Maximum on-state voltage drop V TM 6.5, T J = 25 C.5 V On-state slope resistance r t 7.3 m T J = 25 C Threshold voltage V T(TO) 0.85 V T J = 25 C 0.05 Maximum reverse and direct leakage current I RM /I DM V R = Rated V RRM /V DRM T J = 25 C.0 node supply = 6 V, resistive load, initial I T =, m Typical holding current I H 30 T J = 25 C Maximum latching current I L node supply = 6 V, resistive load, T J = 25 C 50 Maximum rate of rise of off-state voltage dv/dt T J = T J max., linear to 80 %, V DRM = R g - k = Open V/μs Maximum rate of rise of turned-on current di/dt 00 /μs TRIGGERING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G(V) 2.0 W Maximum peak positive gate current +I GM.5 Maximum peak negative gate voltage -V GM 0 V node supply = 6 V, resistive load, T J = 25 C 5 m node supply = 6 V, resistive load, T J = - 65 C 20 node supply = 6 V, resistive load, T J = 25 C 0 V GT Maximum required DC gate voltage to trigger node supply = 6 V, resistive load, T J = 25 C node supply = 6 V, resistive load, T J = 25 C 0.7 V node supply = 6 V, resistive load, T J = - 65 C.2 Maximum DC gate voltage not to trigger V GD 0.2 T J = 25 C, V DRM = Rated value Maximum DC gate current not to trigger I GD 0. m SWITCHING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Typical turn-on time t gt T J = 25 C 0.8 Typical reverse recovery time t rr 3 μs T J = 25 C Typical turn-off time t q 00 Revision: 08-Jul-5 2 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

3 VS-SPbF Series THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage T J, T Stg -0 to +25 temperature range C Soldering temperature T S For 0 s (.6 mm from case) 260 Maximum thermal resistance, R thjc DC operation.5 junction to case C/W Typical thermal resistance, R () thj 0 junction to ambient (PC mount) 2 g pproximate weight 0.07 oz. Marking device Case style D 2 PK (SMD-220) S Note () When mounted on " square (650 mm 2 ) PC of FR- or G-0 material oz. (0 μm) copper 0 C/W For recommended footprint and soldering techniques refer to application note #N-99 Maximum llowable Case Temperature ( C) 25 R thjc (DC) =.5 K/W 20 Conduction ngle verage On-state Current () Fig. - Current Rating Characteristics Maximum verage On-state Power Loss (W) RMS Limit Conduction ngle T = 25 C J verage On-state Current () Fig. 3 - On-State Power Loss Characteristics Maximum llowable Case Temperature ( C) R thjc (DC) =.5 K/W Conduction Period DC Maximum verage On-state Power Loss (W) DC RMS Limit Conduction Period T = 25 C J verage On-state Current () verage On-state Current () Fig. 2 - Current Rating Characteristics Fig. - On-State Power Loss Characteristics Revision: 08-Jul-5 3 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

4 VS-SPbF Series Peak Half Sine Wave Forward Current () t any rated load condition and with rated V rrm applied following surge. Initial Tj = 50 C at 60 Hz s at 50 Hz s Peak Half Sine Wave Forward Current () Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 50 VS- 50 VS Number of Equal mplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 000 Instantaneous On-state Current () 00 0 T = 25 C J T = 25 C J Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 0 Transient Thermal Impedance Z thjc ( C/W) 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single Pulse Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Steady State Value (DC Operation) Revision: 08-Jul-5 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

5 VS-SPbF Series ORDERING INFORMTION TLE Device code VS- 0 T T S 08 S TRL PbF product 2 - Current rating, RMS value 3 - Circuit configuration: T = single thyristor - Package: 5 - T = TO-220C Type of silicon: S = converter grade 6 - Voltage code x 00 = V RRM 7 - S = TO-220 D 2 PK (SMD-220) version 8 - Tape and reel option: TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - PbF = lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-SPbF ntistatic plastic tubes VS-STRRPbF " diameter reel VS-STRLPbF " diameter reel LINKS TO RELTED DOCUMENTS Dimensions Part marking information Packaging information Revision: 08-Jul-5 5 Document Number: 9562 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

6 DIMENSIONS in millimeters and inches D 2 PK Outline Dimensions Conforms to JEDEC outline D 2 PK (SMD-220) (3) L (2)(3) E c2 (E) (D) (3) Pad layout.00 (0.3) 9.65 (0.38) D L2 2 x e 2 3 H (2) 2 x b2 2 x b C Detail 0.00 M M c ± 0.00 M E View - H (3) 7.90 (0.70) 5.00 (0.625) 2.32 (0.08) Plating 2.6 (0.03) 2. (0.096) () b, b3 3.8 (0.5) ase Metal Gauge plane Lead tip 0 to 8 L3 L L Detail Rotated 90 CW Scale: 8: Seating plane (c) (b, b2) Section - and C - C Scale: None c () SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MX. MX. MX. MX. NOTES D E , 3 b E b e 2.5 SC 0.00 SC b H b L c L c L c L SC 0.00 SC D L Notes () Dimensioning and tolerancing per SME Y.5 M-99 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E () Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Revision: 08-Jul-5 Document Number: 9506 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

7 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9000