Thyristor, Surface Mount, Phase Control SCR, 16 A
|
|
- Marybeth Caldwell
- 6 years ago
- Views:
Transcription
1 Thyristor, Surface Mount, Phase Control SCR, TO-263 (D 2 PK) node 2 3 Cathode Gate PRODUCT SUMMRY Package TO-263 (D 2 PK) Diode variation Single SCR I T(V) 6 V DRM /V RRM 800 V, 200 V V TM.25 V I GT 45 m T J - 40 to 25 C FETURES Meets MSL level, per J-STD-020, LF maximum peak of 260 C Designed and qualified according JEDEC -JESD47 Material categorization: For definitions of compliance please see PPLICTIONS Input rectification (soft start) Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-25TTS...S-M3 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 25 C junction temperature. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE RIDGE THREE-PHSE RIDGE UNITS NEM FR-4 or G glass fabric-based epoxy with 4 oz. (40 μm) copper luminum IMS, R thc = 5 C/W luminum IMS with heatsink, R thc = 5 C/W Note T = 55 C, T J = 25 C, footprint 300 mm 2 MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS VLUES UNITS I T(V) Sinusoidal waveform 6 I RMS 25 V RRM /V DRM 800 to 200 V I TSM 350 V T 6, T J = 25 C.25 V dv/dt 500 V/μs di/dt 50 /μs T J - 40 to 25 C VOLTGE RTINGS PRT NUMER V RRM, MXIMUM PEK REVERSE VOLTGE V V DRM, MXIMUM PEK DIRECT VOLTGE V VS-25TTS08S-M VS-25TTS2S-M I RRM /I DRM, T 25 C m Revision: 27-Jan-4 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
2 SOLUTE MXIMUM RTINGS VLUES PRMETER SYMOL TEST CONDITIONS TYP. MX. Maximum average on-state current I T(V) T C = 93 C, conduction half sine wave 6 Maximum RMS on-state current I RMS 25 Maximum peak, one-cycle, non-repetitive surge current I TSM ms sine pulse, no voltage reapplied 350 ms sine pulse, rated V RRM applied 300 ms sine pulse, rated V RRM applied 450 Maximum I 2 t for fusing I 2 t ms sine pulse, no voltage reapplied s Maximum I 2 t for fusing I 2 t t = 0. ms to ms, no voltage reapplied s Maximum on-state voltage drop V TM 6, T J = 25 C.25 V On-state slope resistance r t 2.0 m T J = 25 C Threshold voltage V T(TO).0 V T J = 25 C 0.5 Maximum reverse and direct leakage current I RM /I DM V R = Rated V RRM /V DRM T J = 25 C Holding current I H VS-25TTS08, VS-25TTS2 node supply = 6 V, resistive load, initial I T =, T J = 25 C - 50 Maximum latching current I L node supply = 6 V, resistive load, T J = 25 C 200 Maximum rate of rise of off-state voltage dv/dt T J = T J max., linear to 80 %, V DRM = R g - k = Open 500 V/μs Maximum rate of rise of turned-on current di/dt 50 /μs UNITS m TRIGGERING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G(V) 2.0 W Maximum peak positive gate current + I GM.5 Maximum peak negative gate voltage - V GM V node supply = 6 V, resistive load, T J = 25 C 45 m node supply = 6 V, resistive load, T J = - C 60 node supply = 6 V, resistive load, T J = 25 C 20 node supply = 6 V, resistive load, T J = 25 C 2.0 node supply = 6 V, resistive load, T J = 25 C.0 V node supply = 6 V, resistive load, T J = - C 2.5 Maximum DC gate voltage not to trigger V GD 0.25 T J = 25 C, V DRM = Rated value Maximum DC gate current not to trigger I GD 2.0 m SWITCHING PRMETER SYMOL TEST CONDITIONS VLUES UNITS Typical turn-on time t gt T J = 25 C 0.9 Typical reverse recovery time t rr 4 μs T J = 25 C Typical turn-off time t q Revision: 27-Jan-4 2 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
3 THERML ND MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS VLUES UNITS Maximum junction and storage T J, T Stg - 40 to 25 temperature range C Soldering temperature T S For s (.6 mm from case) 260 Maximum thermal resistance, R thjc DC operation. junction to case C/W Typical thermal resistance, R thj junction to ambient (PC mount) () 40 pproximate weight Marking device Case style D 2 PK (SMD-220) Note () When mounted on " square (650 mm 2 ) PC of FR-4 or G- material 4 oz. (40 μm] copper 40 C/W For recommended footprint and soldering techniques refer to application note #N g 0.07 oz. 25TTS08S 25TTS2S Maximum llowable Case Temperature ( C) 30 R thjc (DC) =. C/ W 20 Conduction ngle Maximum verage On-state Power Loss (W) RMS Limit Conduction ngle T = 25 C J verage On-state Current () Fig. - Current Rating Characteristics verage On-state Current () Fig. 3 - On-State Power Loss Characteristics Maximum llowable Case Temperature ( C) R thjc (DC) =. C/W Conduction Period DC Maximum verage On-state Power Loss (W) DC RMS Limit Conduction Period T = 25 C J verage On-state Current () Fig. 2 - Current Rating Characteristics verage On-state Current () Fig. 4 - On-State Power Loss Characteristics Revision: 27-Jan-4 3 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
4 Peak Half Sine Wave On-state Current () t ny Rated Load Condition nd With Rated V RRM pplied Following Surge. Initial T J= Hz Hz 0.00 s 50 0 Number Of Equal mplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Peak Ha lf Sine Wave On-state Current () Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not e Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied Pulse Train Duration (s) 00 Instantaneous On-state Current () 0 T = 25 C J T = 25 C J Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thjc ( C/W) 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Sing le Pulse Square Wave Pulse Duration (s) Fig. 8 - Gate Characteristics Steady State Value (DC Operation) Revision: 27-Jan-4 4 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
5 Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a)recommended load line for rated di/dt: V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)recommended load line for <= 30% rated di/ dt: V, 65 ohms tr = µs, tp >= 6 µs VGD TJ = 25 C TJ = 25 C TJ = - C (b) (a) IGD Frequency Limited by PG(V) Instantaneous Gate Current () Fig. 9 - Thermal Impedance Z thjc Characteristics () PGM = 40 W, tp = ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = ms (4) (3) (2) () ORDERING INFORMTION TLE Device code VS- 25 T T S 2 S TRL -M3 ORDERING INFORMTION (Example) product 2 - Current rating (25 = 25 ) 3 - Circuit configuration: T = Single thyristor 4 - Package: T = D 2 PK 5 - Type of silicon: 6 - S = Standard recovery rectifier Voltage rating: Voltage code x 0 = V RRM 08 = 800 V 2 = 200 V 7 - S = Surface mountable 8 - None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - -M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-25TTS08S-M ntistatic plastic tubes VS-25TTS08STRR-M " diameter reel VS-25TTS08STRL-M " diameter reel VS-25TTS2S-M ntistatic plastic tubes VS-25TTS2STRR-M " diameter reel VS-25TTS2STRL-M " diameter reel Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS Revision: 27-Jan-4 5 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
6 Outline Dimensions D 2 PK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D 2 PK (SMD-220) (3) L (2)(3) E 4 c2 (E) (D) (3) Pad layout.00 (0.43) 9.65 (0.38) D L2 2 x e 2 3 H (2) 2 x b2 2 x b C Detail 0.0 M M c ± M E View - H (3) 7.90 (0.70) 5.00 (0.625) 2.32 (0.08) Plating 2.64 (0.3) 2.4 (0.096) (4) b, b3 3.8 (0.5) ase Metal Gauge plane Lead assignments Diodes. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8: Seating plane (c) (b, b2) Section - and C - C Scale: None c (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MX. MX. MX. MX. NOTES D E , 3 b E b e 2.54 SC 0.0 SC b H b L c L c L c L SC 0.0 SC D L Notes () Dimensioning and tolerancing per SME Y4.5 M-994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Document Number: For technical questions within your region, please contact one of the following: Revision: 3-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T
7 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 20/65/EU of The European Parliament and of the Council of June 8, 20 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 20/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709 standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS709 standards. Revision: 02-Oct-2 Document Number: 900
Thyristor Surface Mount, Phase Control SCR, 16 A
Thyristor Surface Mount, Phase Control SCR, 6 4 2 D 2 PK (TO-263) PRIMRY CHRCTERISTICS 3 node 2, 4 3 Cathode Gate I T(V) 6 V DRM /V RRM 600 V V TM.25 V I GT 45 m T J -40 C to +25 C Package D 2 PK (TO-263)
More informationThyristor High Voltage Surface Mount Phase Control SCR, 10 A
VS-SPbF Series Thyristor High Voltage Surface Mount Phase Control SCR, 0 2 TO-263 (D 2 PK) 3 2, node Cathode 3 Gate PRODUCT SUMMRY Package TO-263 (D 2 PK) Diode variation Single SCR I T(V) 6.5 V DRM /V
More informationHigh Voltage Surface Mount Input Rectifier Diode, 20 A
VS-2ETS8SPbF, VS-2ETS2SPbF Series High Voltage Surface Mount Input Rectifier Diode, 2 D 2 PK node ase cathode 2 3 node PRODUCT SUMMRY Package TO-263 (D 2 PK) I F(V) 2 V R 8 V, 2 V V F at I F. V I FSM 3
More informationThyristor High Voltage, Surface Mount Phase Control SCR, 16 A
VS-16TTS08S-M3, VS-16TTS12S-M3 Series Thyristor High Voltage, Surface Mount Phase Control SCR, 16 1 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS 2, 4 node 1 Cathode 3 Gate I T(V) V DRM /V RRM 800 V, 1200 V
More informationVS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series High Voltage Surface Mount Input Rectifier Diode, 10 A
VS-ETS8S-M3, VS-ETSS-M3, VS-ETSS-M3 Series High Voltage Surface Mount Input Rectifier Diode, FETURES TO-63 (D PK) 3 node ase cathode 3 node Meets MSL level, per J-STD-, LF maximum peak of 6 C Glass passivated
More informationHigh Voltage Surface Mount Input Rectifier Diode, 20 A
VS-2ETS8SPbF, VS-2ETS2SPbF High Voltage Surface Mount Input Rectifier Diode, 2 FETURES 2 TO-263 (D 2 PK) 3 node ase cathode 2 3 node Meets MSL level, per J-STD-2, LF maximum peak of 26 C Glass passivated
More informationThyristor High Voltage, Phase Control SCR, 16 A
Thyristor High Voltage, Phase Control SCR, 6 3L TO-220B PRIMRY CHRCTERISTICS 2 () (K) (G) 3 I T(V) V DRM /V RRM 800 V, 0 V V TM.4 V I GT 60 m T J -40 C to 25 C Package 3L TO-220B Circuit configuration
More informationHigh Voltage Surface Mount Input Rectifier Diode, 25 A
High Voltage Surface Mount Input Rectifier Diode, 25 2 D 2 PK (TO-263) node PRIMRY CHRCTERISTICS 3 ase cathode 2 3 node I F(V) 25 V R 2 V V F at I F.4 V I FSM 3 T J max. 5 C Package D 2 PK (TO-263) Circuit
More informationHigh Voltage, Input Rectifier Diode, 10 A
VS-ETS...PbF Series, VS-ETS...M3 Series High Voltage, Input Rectifier Diode, Base cathode 3 3 TO-C Cathode node PRODUCT SUMMRY Package TO-C I F(V) V R 8 V to V V F at I F. V I FSM 6 T J max. 5 C Diode
More informationThyristor High Voltage, Phase Control SCR, 25 A
Thyristor High Voltage, Phase Control SCR, 25 TO-220B 2 3 2 () (K) (G) 3 FETURES Easy control peak current at charger power up to reduce passive / electromechanical components Meets JESD 20 class whisker
More informationThyristor High Voltage, Phase Control SCR, 25 A
Thyristor High Voltage, Phase Control SCR, 25 2 () PRODUCT SUMMRY Package TO-220B Diode variation Single SCR I T(V) 6 V DRM /V RRM 800 V, 200 V V TM.25 V I GT 45 m T J - 40 C to 25 C FETURES Designed and
More informationHigh Voltage Surface Mount Input Rectifier Diode, 20 A
VS-2ETS8S-M3, VS-2ETS2S-M3 Series High Voltage Surface Mount Input Rectifier Diode, 2 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS node ase cathode 2 3 node I F(V) 2 V R 8 V, 2 V V F at I F. V I FSM 3 T J
More informationHigh Voltage Phase Control Thyristor, 12 A
High oltage Phase Control Thyristor, 2 3L TO-220B PRIMRY CHRCTERISTICS I T() 8 DRM / RRM 800 TM.2 I GT 5 m T J -40 C to 25 C Package Circuit configuration 2 () (K) (G) 3 3L TO-220B Single SCR FETURES Designed
More informationSurface Mount Fast Soft Recovery Rectifier Diode, 10 A
VS-1ETF2S-M3, VS-1ETF4S-M3, VS-1ETF6S-M3 Series www.vishay.com Surface Mount Fast Soft Recovery Rectifier Diode, 1 1 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS ase cathode + 2 1 3 node - - node I F(V) 1
More informationFast Soft Recovery Rectifier Diode, 20 A
VS-2ETF..PbF Series, VS-2ETF..-M3 Series Fast Soft Recovery Rectifier Diode, 2 FETURES 2 TO-22C 3 Base cathode 2 3 Cathode node Glass passivated pellet chip junction C max operating junction temperature
More informationFast Soft Recovery Rectifier Diode, 20 A
D 2 PK (SMD-22) PRODUCT SUMMRY V F at 2 I FSM V RRM Base common cathode + 2 node - - 2ETF..SPbF Soft Recovery Series Rectifier Diode, 2 3 node
More informationThyristor High Voltage, Phase Control SCR, 40 A
Thyristor High Voltage, Phase Control SCR, 40 TO-247C 2 () (K) (G) 3 PRIMRY CHRCTERISTICS I T(V) 35 V DRM /V RRM 800 V, 200 V V TM.45 V I GT 50 m T J -40 C to +25 C Package TO-247C Circuit configuration
More informationHigh Voltage, Input Rectifier Diode, 20 A
VS-2ETS6PbF, VS-2ETS6-M3 High Voltage, Input Rectifier Diode, 2 2 TO-22C 3 Base cathode 2 3 Cathode node FETURES Very low forward voltage drop 5 C max. operating junction temperature Glass passivated pellet
More informationHigh Performance Schottky Rectifier, 10 A
VS-0TQ035SPbF, VS-0TQ045SPbF High Performance Schottky Rectifier, 0 D 2 PK ase cathode 2 3 N/C node PRODUCT SUMMRY Package D 2 PK I F(V) 0 V R 35 V, 40 V, 45 V V F at I F 0.57 V I RM 5 m at 25 C T J max.
More informationHigh Performance Schottky Rectifier, 10 A
High Performance Schottky Rectifier, TO-263 (D 2 PK) ase cathode 2 1 3 N/C node PRODUCT SUMMRY Package TO-263 (D 2 PK) I F(V) V R 35 V, 45 V V F at I F.57 V I RM max. 15 m at 125 C T J max. 15 C Diode
More informationVS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF High Performance Schottky Rectifier, 18 A
VS-18TQ035SPbF, VS-18TQ040SPbF, VS-18TQ045SPbF www.vishay.com High Performance Schottky Rectifier, 18 D 2 PK ase cathode 2 1 3 N/C node PRODUCT SUMMRY Package D 2 PK I F(V) 18 V R 35 V, 40 V, 45 V V F
More informationHyperfast Rectifier, 15 A FRED Pt
VS-ETX506S-M3, VS-ETX506--M3 Hyperfast Rectifier, 5 FRED Pt FETURES TO-263 (D 2 PK) ase cathode 2 TO-262 2 Hyperfast recovery time, extremely low Q rr Low forward voltage drop 75 C operating junction temperature
More informationHigh Performance Schottky Rectifier, 16 A
High Performance Schottky Rectifier, 16 D 2 PK ase cathode 2 1 3 N/C node PRODUCT SUMMRY Package TO-263 (D 2 PK) I F(V) 16 V R 35 V, 45 V V F at I F.63 I RM 4 m at 125 C T J max. 15 C Diode variation Single
More informationFast Soft Recovery Rectifier Diode, 80 A
VS-8PF..PbF Series, VS-8PF..-M3 Series Fast Soft Recovery Rectifier Diode, 8 Base cathode + 2 FETURES Glass passivated pellet chip junction 15 C max. operating junction temperature Low forward voltage
More informationHigh Performance Schottky Rectifier, 16 A
High Performance Schottky Rectifier, 16 D 2 PK ase cathode 2 1 3 N/C node PRODUCT SUMMRY Package TO-263 (D 2 PK) I F(V) 16 V R 35 V, 45 V V F at I F.63 I RM 4 m at 125 C T J max. 15 C Diode variation Single
More informationHigh Performance Schottky Rectifier, 6 A
High Performance Schottky Rectifier, 6 TO-263 (D 2 PK) ase cathode 2 1 3 N/C node PRODUCT SUMMRY Package TO-263 (D 2 PK) I F(V) 6 V R 35 V, 4 V, 45 V V F at I F.53 V I RM 7 m at 125 C T J max. 175 C Diode
More informationHigh Performance Schottky Rectifier, 2 x 20 A
High Performance Schottky Rectifier, x TO-63 (D PK) ase common cathode Common 3 node cathode node VS-MR445CTPbF PRODUCT SUMMRY TO-6 ase common cathode Common 3 node cathode node VS-MR445CT-PbF Package
More informationUltrafast Rectifier, 15 A FRED Pt
Ultrafast Rectifier, 5 FRED Pt TO-63 (D PK) ase cathode TO-6 FETURES State of the art low forward voltage drop Ultrafast recovery time 75 C operating junction temperature Low leakage current Designed and
More informationSurface Mountable Phase Control SCR, 16 A
D 2 PAK PRODUCT SUMMARY V T at 16 A I TSM V RRM Anode 2 1 3 Cathode Gate < 1.25 V 300 A 800 V to 1600 V FEATURES Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Compliant to RoHS directive 2002/95/EC
More informationHigh Performance Schottky Rectifier, 2 x 8 A
VS-6CTQ...SPbF, VS-6CTQ...-PbF Series High Performance Schottky Rectifier, x 8 VS-6CTQ...SPbF ase common cathode Common 3 node cathode node D PK VS-6CTQ...-PbF ase common cathode Common 3 node cathode
More informationHigh Performance Schottky Rectifier, 2 x 10 A
High Performance Schottky Rectifier, x TO-63 (D PK) ase common cathode Common 3 node cathode node VS-CTQ5SHM3 TO-6 ase common cathode Common 3 node cathode node VS-CTQ5-HM3 PRODUCT SUMMRY Package TO-63
More informationHigh Performance Schottky Rectifier, 2 x 20 A
High Performance Schottky Rectifier, x TO-63 (D PK) ase common cathode 1 Common 3 node cathode node VS-48CTQ6SPbF TO-6 ase common cathode 1 Common 3 node cathode node VS-48CTQ6-1PbF PRODUCT SUMMRY Package
More informationHigh Performance Schottky Rectifier, 15 A
High Performance Schottky Rectifier, 15 1 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS ase cathode 2 1 3 N/C node I F(V) 15 V R 60 V V F at I F 0.56 V I RM max. 45 m at 125 C T J max. 150 C E S 6 mj Package
More informationHigh Performance Schottky Rectifier, 2 x 20 A
High Performance Schottky Rectifier, x TO 63 (D PK) ase common cathode Common 3 node cathode node VS-43CTQ...SPbF TO-6 ase common cathode Common 3 node cathode node VS-43CTQ...-PbF PRODUCT SUMMRY Package
More informationUltrafast Rectifier, 15 A FRED Pt
VS-ETL506SHM3, VS-ETL506-HM3 Ultrafast Rectifier, 5 FRED Pt FETURES State of the art low forward voltage drop Ultrafast recovery time 75 C operating junction temperature TO-63 (D PK) ase cathode 3 TO-6
More informationHigh Performance Schottky Rectifier, 20 A
High Performance Schottky Rectifier, 2 VS-STPS2L15GPbF TO-263 (D 2 PK) PRODUCT SUMMRY ase cathode 2 1 3 N/C node I F(V) 2 V R 15 V V F at I F.33 V I RM max. 6 m at C T J max. 125 C E S mj Package TO-263
More informationHigh Performance Schottky Rectifier, 2 x 20 A
VS-43CTQ...SHM3, VS-43CTQ...-1HM3 Series High Performance Schottky Rectifier, 2 x 20 D 2 PK ase common cathode 2 2 1 Common 3 node cathode node VS-43CTQ...SHM3 TO-262 ase common cathode 2 2 1 Common 3
More informationHigh Voltage Surface Mountable Input Rectifier Diode, 8 A
VS-8EWS8S-M3, VS-8EWSS-M3 High Voltage Surface Mountable Input Rectifier Diode, 8 TO-5 (D-PK) 3 Base cathode + 3 node - - node PRODUT SUMMRY Package TO-5 (D-PK) I F(V) 8 V R 8 V, V V F at I F. V I FSM
More informationHigh Performance Schottky Rectifier, 2 x 10 A
VS-0CTQ150SHM3, VS-0CTQ150-1HM3 High Performance Schottky Rectifier, x TO-63 (D PK) ase common cathode 1 Common 3 node cathode node VS-0CTQ150SHM3 TO-6 ase common cathode 1 Common 3 node cathode node VS-0CTQ150-1HM3
More informationUltrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt TO-263 (D 2 PK) ase cathode 2 TO-262 2 FETURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1,
More informationHigh Performance Schottky Rectifier, 2 x 20 A
VS-4L5CTS-M3, VS-4L5CT--M3 High Performance Schottky Rectifier, x 3 D PK (TO-63) ase common cathode Common 3 node cathode node VS-4L5CTS-M3 3 PRIMRY CHRCTERISTICS TO-6 ase common cathode Common 3 node
More informationSchottky Rectifier, 2 x 8 A
VS-6CTQ...GSPbF, VS-6CTQ...G-PbF Series Schottky Rectifier, x 8 VS-6CTQ...GSPbF ase common cathode Common 3 node cathode node D PK PRODUCT SUMMRY I F(V) V R VS-6CTQ...G-PbF ase common cathode Common 3
More informationSchottky Rectifier, 16 A
VS-MBR6...PbF Series, VS-MBR6...-N3 Series Schottky Rectifier, 6 TO-220C PRODUCT SUMMRY Package TO-220C I F(V) 6 V R 35 V, 45 V V F at I F 0.57 V I RM max. 40 m at 25 C T J max. 50 C Diode variation Single
More informationHigh Performance Schottky Rectifier, 2 x 20 A
VS-4CTQ030S-M3, VS-4CTQ030--M3 High Performance Schottky Rectifier, x 0 FETURES 50 C T J operation Center tap configuration 3 D PK (TO-63) ase common cathode Common 3 node cathode node VS-4CTQ030S-M3 3
More informationMedium Power Phase Control Thyristors (Stud Version), 50 A
Medium Power Phase Control Thyristors (Stud Version), 50 A VS- TO-208AC (TO-65) PRODUCT SUMMARY Package TO-208AC (TO-65) Diode variation Single SCR I T(AV) 50 A V DRM /V RRM V to 1200 V V TM 1.60 V I GT
More informationHigh Performance Schottky Rectifier, 6 A
High Performance Schottky Rectifier, 6 TO-220C PRODUCT SUMMRY I F(V) 6 V R 35 V to 45 V V F at I F 0.53 V I RM max. 7 m at 25 C T J max. 75 C E S 8 mj Package TO-220C Diode variation Base cathode 2 3 Cathode
More informationSchottky Rectifier, 2 x 15 A
Schottky Rectifier, 2 x 5 TO-220B PRODUCT SUMMRY Package TO-220B I F(V) 2 x 5 V R 25 V, 30 V V F at I F 0.40 V I RM max. 97 m at 25 C T J max. 50 C Diode variation Common cathode E S Base 2 common cathode
More informationUltrafast Rectifier, 2 x 10 A FRED Pt
www.vishay.com VS-MUR22CTPbF, VS-MUR22CT-PbF Ultrafast Rectifier, 2 x FRED Pt TO-263 (D 2 PK) ase common cathode 2 TO-262 ase common cathode 2 FETURES Ultrafast recovery time Low forward voltage drop Low
More informationPhase Control Thyristors (Stud Version), 110 A
Phase Control Thyristors (Stud Version), 110 A TO-209AC (TO-94) PRODUCT SUMMARY I T(AV) 110 A V DRM /V RRM 400 V, 1600 V V TM 1.52 V I GT 150 ma T J -40 C to 140 C Package TO-209AC (TO-94) Diode variation
More informationVS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series Schottky Rectifier, 2 x 10 A
Schottky Rectifier, 2 x TO-220B Base 2 common cathode node 2 node Common 3 cathode PRODUCT SUMMRY Package TO-220B I F(V) 2 x V R 35 V, 45 V V F at I F 0.57 V I RM max. 5 m at 25 C T J max. 50 C Diode variation
More informationHigh Performance Schottky Rectifier, 2 x 20 A
High Performance Schottky Rectifier, 2 x 20 3L TO-220B PRIMRY CHRCTERISTICS Base 2 common cathode node 2 node Common 3 cathode I F(V) 2 x 20 V R 30 V V F at I F 0.38 V I RM max. 83 m at 25 C T J max. 50
More informationUltrafast Rectifier, 2 x 5 A FRED Pt
VS-MURCTPbF, VS-MURCT-PbF Ultrafast Rectifier, x 5 FRED Pt VS-MURCTPbF node ase common cathode 3 Common cathode D PK PRODUCT SUMMRY t rr I F(V) V R node VS-MURCT-PbF node ase common cathode 3 Common cathode
More informationVS-70TPS12PbF, VS-70TPS16PbF High Voltage Series High Voltage Phase Control Thyristor, 70 A
High Voltage Phase Control Thyristor, 70 A Super TO-247 PRODUCT SUMMARY 2 (A) 1 (K) (G) 3 Package Super TO-247 Diode variation Single SCR I T(AV) 70 A V DRM /V RRM 1200 V, 1600 V V TM 1.4 V I GT 100 ma
More informationHEXFRED, Ultrafast Soft Recovery Diode, 8 A
HEXFRED, Ultrafast Soft Recovery Diode, 8 VS-HF08T120S-M3 2 1 3 D 2 PK (TO-263) ase cathode 2 1 3 N/C node PRIMRY CHRCTERISTICS I F(V) 8 V R 1200 V V F at I F 2.4 V t rr (typ.) 28 ns T J max. 150 C Package
More informationHigh Voltage, Input Rectifier Diode, 80 A
VS-8PS6PbF, VS-8PS6-M3 High Voltage, Input Rectifier Diode, 8 Base cathode + 2 FETURES Very low forward voltage drop 5 max. operating junction temperature Glass passivated pellet chip junction TO-247 2
More informationThyristor High Voltage, Phase Control SCR, 30 A
Thyristor High Voltage, Phase ontrol SR, 30 2 () FETURES High voltage (up to 1600 V) Designed and qualified according to JEDE -JESD47 TO-247 1 2 3 1 (K) (G) 3 125 max. operating junction temperature Material
More informationSingle phase bridge. (Power Modules), 25 A/35 A
Single Phase Bridge (Power Modules), 25 /35 GBPC... PRODUCT SUMMRY I O V RRM Package Circuit GBPC...W 25 to 35 V to V GBPC.., GBPC..W Single phase bridge FETURES Universal, 3 way terminals: push-on, wrap
More informationUltrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt TO-220C Base cathode 2 1 3 Cathode node FETURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current Compliant to RoHS
More informationHyperfast Rectifier, 30 A FRED Pt
Hyperfast Rectifier, 30 FRED Pt TO-220C Base cathode 2 1 3 Cathode node FETURES Reduced Q rr and soft recovery 175 C T J maximum For PFC CRM/CCM operation Low forward voltage drop Low leakage current Compliant
More informationVS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A
Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) FEATURES High surge capability High voltage input rectification 2 Designed and qualified according to JEDEC -JESD47 3 Super TO-247 (K) (G) 3 Material
More informationVS-HFA06TB120-M3. HEXFRED, Ultrafast Soft Recovery Diode, 6 A. Vishay Semiconductors. FEATURES
VS-HF06TB20-M3 HEXFRED, Ultrafast Soft Recovery Diode, 6 2 FETURES Ultrafast and ultrasoft recovery 3 2L TO-220C Very low I RRM and Q rr Designed and qualified according to JEDEC -JESD 47 Material categorization:
More informationSchottky Rectifier, 5.5 A
D-PK (TO-252) Base cathode 4, 2 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 5.5 V R 6 V V F at I F See Electrical table I RM 35 m at 25 T J max. 5 Diode variation Single die E S 7 mj FETURES
More informationHigh Voltage, Input Rectifier Diode, 80 A
VS-8PS..PbF Series, VS-8PS..-M3 Series High Voltage, Input Rectifier Diode, 8 Base cathode + 2 FETURES Very low forward voltage drop 5 max. operating junction temperature Glass passivated pellet chip junction
More informationHEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 FETURES Ultrafast and ultrasoft recovery VS-HF6T6C-M3 3L TO-22B Base common cathode 4 2 Common node cathode node 3 PRIMRY CHRCTERISTICS Package 3L TO-22B I
More informationHigh Voltage Input Rectifier Diode, 60 A
VS-6EPS..PbF Series, VS-6EPS..-M3 Series High Voltage Input Rectifier Diode, 6 FETURES TO-247 modified 2 3 Base cathode 2 3 athode node Very low forward voltage drop 5 max. operating junction temperature
More informationSurface Mount Fast Soft Recovery Rectifier Diode, 10 A
VS-ETF..SPbF Series Surface Mount Fast Soft Recovery Rectifier Diode, A TO-63AB (D PAK) PRODUCT SUMMARY 3 Base cathode + 3 Anode - - Anode Package TO-63AB (D PAK) I F(AV) A V R V, V V F at I F.33 V I FSM
More informationHigh Performance Schottky Rectifier, 5.5 A
High Performance Schottky Rectifier, 5.5 VS-5WQ3FN-M3 D-PK (TO-252) Base cathode 4, 2 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 5.5 V R 3 V V F at I F See Electrical table I RM 58 m at 25
More informationHigh Voltage, Input Rectifier Diode, 10 A
VS-ETS..FPPbF Series, VS-ETS..FP-M3 Series High Voltage, Input Rectifier Diode, A TO-22 FULL-PAK PRODUCT SUMMARY Base cathode 3 Cathode Anode Package TO-22FP I F(AV) A V R 8 V to 2 V V F at I F. V I FSM
More informationHigh Voltage Input Rectifier Diode, 65 A
High Voltage Input Rectifier Diode, 65 FETURES Very low forward voltage drop Glass passivated pellet chip junction 3 TO-47D L Base cathode 3 TO-47D 3L Base cathode E-Q0 qualified meets JESD 0 class whisker
More informationSchottky Rectifier, 10 A
D-PK (TO-252) Base cathode 4, 2 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 0 V R 45 V V F at I F 0.53 V I RM 5 m at 25 T J max. 75 Diode variation Single die E S 20 mj FETURES Popular D-PK
More informationUltrafast Rectifier, 2 x 10 A FRED Pt
Ultrafast Rectifier, 2 x FRED Pt TO-22B Base common cathode 2 2 Common node cathode node 1 3 FETURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current
More informationHigh Performance Schottky Rectifier, 2 x 3.5 A
High Performance Schottky Rectifier, 2 x 3.5 VS-6WQ6FN-M3 D-PK (TO-252) Base common cathode 4 2 ommon cathode 1 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 2 x 3.5 V R 6 V V F at I F See Electrical
More informationHEXFRED, Ultrafast Soft Recovery Diode, 15 A
VS-HF15TB6PbF, VS-HF15TB6-N3 HEXFRED, Ultrafast Soft Recovery Diode, 15 FETURES Ultrafast and ultrasoft recovery TO-22C Base cathode 2 1 3 Cathode node PRODUCT SUMMRY Package TO-22C I F(V) 15 V R 6 V V
More informationSchottky Rectifier, 2 x 30 A
VS-6CPQ5PbF, VS-6CPQ5-N3 Schottky Rectifier, x 3 TO-47C PRODUCT SUMMRY Package TO-47C I F(V) x 3 V R 5 V V F at I F.67 V I RM max. 5 m at 5 C T J max. 75 C Diode variation Common cathode E S 3 node Base
More informationMedium Power Phase Control Thyristors (Stud Version), 16 A
Medium Power Phase Control Thyristors (Stud Version), 16 A VS- PRODUCT SUMMARY TO-208AA (TO-48) Package TO-208AA (TO-48) Diode variation Single SCR I T(AV) 16 A 0 V, 200 V, 400 V, 600 V, 800 V, V DRM /V
More informationSchottky Rectifier, 5.5 A
VS-5WQ4FNPbF Schottky Rectifier, 5.5 D-PK (TO-252) Base cathode 4, 2 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 5.5 V R 4 V V F at I F See Electrical table I RM 4 m at 25 T J max. 5 Diode variation
More informationHyperfast Rectifier, 15 A FRED Pt
VS-ETX506-M3, VS-ETX506FP-M3 Hyperfast Rectifier, 5 FRED Pt Vishay Semiconductors FETURES 2L TO-220C Base cathode 2 2L TO-220 FULL-PK Hyperfast recovery time, extremely low Q rr Low forward voltage drop
More informationSingle Phase Bridge Rectifier, 2 A
Single Phase Bridge Rectifier, 2 FETURES Suitable for printed circuit board mounting Compact construction High surge current capability Material categorization: for definitions of compliance please see
More informationUltrafast Rectifier, 30 A FRED Pt
Ultrafast Rectifier, 30 FRED Pt Vishay Semiconductors 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES Low forward voltage drop Ultrafast soft recovery time 75 C operating junction temperature Low leakage
More informationHEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A
VS-HF3T6CPbF, VS-HF3T6C-N3 HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 FETURES Ultrafast and ultrasoft recovery TO-22B Base common cathode 2 2 Common node cathode node 1 3 PRODUCT SUMMRY Package TO-22B
More informationMedium Power Phase Control Thyristors (Stud Version), 50 A
Medium Power Phase Control Thyristors (Stud Version), 50 A VS- TO-208AC (TO-65) PRODUCT SUMMARY Package TO-208AC (TO-65) Diode variation Single SCR I T(AV) 50 A V DRM /V RRM V to 1200 V V TM 1.60 V I GT
More informationHyperfast Rectifier, 30 A FRED Pt
Hyperfast Rectifier, 30 FRED Pt 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES Hyperfast soft recovery time Low forward voltage drop 75 C operating junction temperature Low leakage current Fully isolated
More informationThyristor High Voltage, Phase Control SCR, 40 A
S-40TPS6PbF, S-40TPS6-M3 Thyristor High oltage, Phase ontrol SR, 40 FETURES 2 () High voltage (up to 600 ) Designed and qualified according to JEDE -JESD47 25 max. operating junction temperature TO-247
More informationPhase Control Thyristors (Hockey PUK Version), 1745 A
Phase Control Thyristors (Hockey PUK Version), 1745 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Designed and
More informationHyperfast Rectifier, 8 A FRED Pt
Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors 2L TO-22C Base cathode 2 2L TO-22 FULL-PK FETURES Hyperfast recovery time, extremely low Q rr 75 C maximum operating junction temperature For PFC CCM
More informationThyristor High Voltage, Phase Control SCR, 40 A
S-40TPS2LHM3, S-40TPS2ALHM3 Thyristor High oltage, Phase Control SCR, 40 A FEATURES 2 (A) Low I GT parts available AEC-Q0 qualified meets JESD 20 class A whisker test 2 3 TO-247AD 3L (K) (G) 3 Flexible
More informationHigh Performance Schottky Rectifier, 2 x 6 A
High Performance Schottky Rectifier, 2 x 6 VS-2WQ0FN-M3 D-PK (TO-252) Base common cathode 2 ommon cathode 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 2 x 6 V R 00 V V F at I F 0.65 V I RM m
More informationFast Soft Recovery Rectifier Diode, 40 A
VS-4EPF1.PbF Series, VS-4EPF1.-M3 Series Fast Soft Recovery Rectifier Diode, 4 Base cathode FETURES Glass passivated pellet chip junction 1 TO-247 modified 2 3 2 1 3 athode node 15 max. operating junction
More informationHigh Voltage Input Rectifier Diode, 60 A
High Voltage Input Rectifier Diode, 6 VS-6EPS..PbF Base common cathode 2 FETURES Designed and qualified according to JEDE-JESD47 ompliant to RoHS Directive 22/95/E TO-247 modified 3 athode node 2 PPLITIONS
More informationPhase Control Thyristors (Hockey PUK Version), 1350 A
Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case B-PUK (TO-200AC) Designed and qualified for industrial
More informationThyristor High Voltage, Phase Control SCR, 50 A
S-TPS2LHM3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, A 2 (A) FEATURES AEC-Q qualified, meets JESD 20 class A whisker test Flexible solution for reliable AC power rectification 2 3
More informationHyperfast Rectifier, 2 x 5 A FRED Pt
Hyperfast Rectifier, 2 x 5 A FRED Pt VS-CSH02HM3 K TO-277A (SMPC) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
More informationHigh Voltage Surface Mountable Input Rectifier Diode, 8 A
High Voltage Surface Mountable Input Rectifier Diode, 8 A 1 DPAK (TO-5AA) PRIMARY CHARACTERISTICS 3 Base cathode + 1 3 Anode - - Anode I F(AV) 8 A V R 8 V, 1 V V F at I F 1.1 V I FSM 15 A T J max. 15 C
More informationThyristor High Voltage, Phase Control SCR, 50 A
S-50TPS2L-M3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, 50 A 2 3 TO-247AD 3L PRIMARY CHARACTERISTICS 2 (A) (K) (G) 3 I T(A) 50 A DRM / RRM 200 TM (typ.). I GT (typ.) 40 ma T J -40 C
More informationFast Soft Recovery Rectifier Diode, 60 A
VS-6.PF1.PbF Series, VS-6.PF1.-M3 Series Fast Soft Recovery Rectifier Diode, 6 FETURES Glass passivated pellet chip junction 15 max. operating junction temperature 2 1 TO-247 modified Base cathode 2 3
More informationHEXFRED Ultrafast Soft Recovery Diode, 15 A
HEXFRED Ultrafast Soft Recovery Diode, 15 FETURES Ultrafast and ultrasoft recovery 1 TO-247C modified Base common cathode 2 2 3 Very low I RRM and Q rr Designed and qualified according to JEDEC -JESD47
More informationSchottky Rectifier, 2 x 3.5 A
D-PK (TO-252) Base common cathode 4 2 ommon cathode 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 2 x 3.5 V R V V F at I F See Electrical table I RM 4.9 m at 25 T J max. 5 Diode variation ommon
More informationHigh Performance Schottky Rectifier, 2 x 6 A
High Performance Schottky Rectifier, 2 x 6 DPK (TO-252) PRIMRY HRTERISTIS Base common cathode 4 2 ommon cathode 3 node node I F(V) 2 x 6 V R 30 V V F at I F 0.37 V I RM 58 m at 25 T J max. 50 E S 0 mj
More informationThree Phase AC Switch (Power Modules), 50 A to 100 A
54-94-4MT..KPbF Series Three Phase AC Switch (Power Modules), 5 A to A MTK PRODUCT SUMMARY I O RRM Package Circuit 5 A to A 8 to 6 MT-K Three phase AC switch FEATURES Package fully compatible with the
More informationHigh Voltage Glass Passivated Junction Plastic Rectifier
High Voltage Glass Passivated Junction Plastic Rectifier SUPERECTIFIER FEATURES Superectifier structure for high reliability application Cavity-free glass-passivated junction Low leakage current High forward
More information