Single Phase Bridge Rectifier, 2 A
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1 Single Phase Bridge Rectifier, 2 FETURES Suitable for printed circuit board mounting Compact construction High surge current capability Material categorization: for definitions of compliance please see D-44 PRIMRY CHRCTERISTICS I O 2 V RRM 50 V to 1000 V Package D-44 Circuit configuration Single phase bridge DESCRIPTION 2 single phase encapsulated bridge rectifier consisting of four single diodes connected as a full bridge. They are intended for general applications in industrial and consumer equipment. MJOR RTINGS ND CHRCTERISTICS SYMBOL CHRCTERISTICS VLUES UNITS I O Hz 60 I FSM 60 Hz 63 I 2 t 50 Hz Hz 16 2 s V RRM 50 to 1000 V T J -40 to +150 C ELECTRICL SPECIFICTIONS VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM REPETITIVE PEK REVERSE VOLTGE V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V RMS, MXIMUM RECOMMENDED RMS SUPPLY VOLTGE VS-2KBP VS-2KBP VS-2KBP VS-2KBP VS-2KBP VS-2KBP VS-2KBP Revision: 25-Oct-17 1 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
2 FORWRD CONDUCTION PRMETER SYMBOL TEST CONDITIONS VLUES UNITS T = 50 C, resistive or inductive load 2.0 Maximum DC output current I O T = 50 C, capacitive load 1.6 Maximum peak one cycle, t = 10 ms, 20 ms Following any rated load condition 60 I FSM non-repetitive surge current t = 8.3 ms, 16.7 ms and with rated V RRM reapplied 63 t = 10 ms 100 % V RRM 18 Maximum I 2 t capability for fusing I 2 t t = 8.3 ms reapplied Initial 16 T J = T J maximum t = 10 ms No voltage 26 2 s t = 8.3 ms reapplied 23 Maximum I 2 t capability for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied s Maximum peak forward voltage per diode V FM I FM = 1, T J = 25 C 1.0 V Typical peak reverse leakage current per diode I RM T J = 25 C, 100 % V RRM 10 μ T J = 150 C, 100 % V RRM 1.0 m Operating frequency range f 40 to 1000 Hz THERML ND MECHNICL SPECIFICTIONS PRMETER SYMBOL VLUES UNITS Operating junction and storage temperature range T J, T Stg -40 to 150 C 4 g pproximate weight 0.14 oz. verage Output Current () Resistive, inductive load Capacitive load Maximum Peak Output Current () From any rated load condition Maximum llowable mbient Temperature ( C) Pulse Train Duration (s) Fig. 1 - mbient Temperature Ratings Fig. 2 - Non-Repetitive Surge Ratings Revision: 25-Oct-17 2 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
3 CIRCUIT CONFIGURTION I O + ~ ~ - Dimensions LINKS TO RELTED DOCUMENTS Revision: 25-Oct-17 3 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
4 Outline Dimensions D-44 DIMENSIONS in millimeters (inches) 22 (0.87) 15 (0.59) + ~ ~ (0.69) 6.8 (0.27) Ø 0.75 (0.030) Document Number: For technical questions, contact: indmodules@vishay.com Revision: 04-Jul-08 1
5 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000
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Standard Recovery Diodes, (Stud Version), 300 A DO-9 (DO-205AB) PRIMARY CHARACTERISTICS I F(AV) 300 A Package DO-9 (DO-205AB) Circuit configuration Single FEATURES Wide current range High voltage rating
HEXFRED Ultrafast Diodes, 100 A (INT-A-PAK Power Modules)
HEXFRED Ultrafast Diodes, A (INT-A-PAK Power Modules) INT-A-PAK PRIMARY CHARACTERISTICS V R 1200 V V F (typical) 2.5 V t rr (typical) 150 ns I F(DC) at T C 110 A at C Package INT-A-PAK Circuit configuration
Hyperfast Rectifier, 8 A FRED Pt
Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors 2L TO-22C Base cathode 2 2L TO-22 FULL-PK FETURES Hyperfast recovery time, extremely low Q rr 75 C maximum operating junction temperature For PFC CCM
Power Modules, Passivated Assembled Circuit Elements, 25 A
Power Modules, Passivated Assembled Circuit Elements, 25 A VS-P Series FEATURES Glass passivated junctions for greater reliability Electrically isolated base plate PACE-PAK (D-9) PRIMARY CHARACTERISTICS
Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A
VS-6FL(R), VS-2FL(R), VS-6FL(R) Series Fast Recovery Diodes (Stud Version), 6 A, 2 A, 6 A DO-23AA (DO-4) FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities
High Voltage Surface Mountable Input Rectifier Diode, 8 A
VS-8EWS8S-M3, VS-8EWSS-M3 High Voltage Surface Mountable Input Rectifier Diode, 8 TO-5 (D-PK) 3 Base cathode + 3 node - - node PRODUT SUMMRY Package TO-5 (D-PK) I F(V) 8 V R 8 V, V V F at I F. V I FSM
Three Phase Bridge, 130 A to 160 A (Power Modules)
Three Phase Bridge, 3 A to 6 A (Power Modules) VS-3-6MT..KPbF Series PRODUCT SUMMARY I O V RRM Package Circuit MTK 3 A to 6 A 8 V to 6 V MT-K Three phase bridge FEATURES Package fully compatible with the
Three Phase Bridge, 160 A (Power Modules)
MTC Three Phase Bridge, 160 A (Power Modules) S-160MT...C Series ishay Semiconductors FEATURES Blocking voltage up to 1 High surge capability High thermal conductivity package, electrically insulated case
High Performance Schottky Rectifier, 240 A
High Performance Schottky Rectifier, 240 A HALF-PAK (D-67) Lug terminal anode Base cathode FEATURES 175 C T J operation Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness
Ultrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt TO-263 (D 2 PK) ase cathode 2 TO-262 2 FETURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1,
Standard Recovery Diodes Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A
VS-95PF(R)...(W) High Voltage Series Standard Recovery Diodes Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A 95PF(R)... DO-5 (DO-203AB) 95PF(R)...W DO-5 (DO-203AB) FEATURES High surge current capability
High Performance Schottky Rectifier, 1.5 A
High Performance Schottky Rectifier, 1.5 A Cathode Anode SMA (DO-214AC) PRODUCT SUMMARY Package SMA (DO-214AC) I F(AV) 1.5 A V R 40 V V F at I F 0.43 V I RM 20 ma at 125 C T J max. 150 C Diode variation
Thyristor Surface Mount, Phase Control SCR, 16 A
Thyristor Surface Mount, Phase Control SCR, 6 4 2 D 2 PK (TO-263) PRIMRY CHRCTERISTICS 3 node 2, 4 3 Cathode Gate I T(V) 6 V DRM /V RRM 600 V V TM.25 V I GT 45 m T J -40 C to +25 C Package D 2 PK (TO-263)
Single Phase Bridge (Power Modules), 25/35 A
MB Series MB Single Phase Bridge FEATURES Universal, 3 way terminals: Push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume
Standard Recovery Diodes, (Hockey PUK Version), 3000 A
Standard Recovery Diodes, (Hockey PUK Version), 3000 A VS- K-PUK (DO-200AC) PRIMARY CHARACTERISTICS I F(AV) 3000 A Package K-PUK (DO-200AC) Circuit configuration Single FEATURES Wide current range High
Three Phase Bridge (Power Modules), 25 A to 35 A
Three Phase Bridge (Power Modules), 25 A to 35 A D-63 PRODUCT SUMMARY I O 25 A to 35 A V RRM V to 6 V Package D-63 Circuit Three phase bridge FEATURES Universal, 3 way terminals: push-on, wrap around or
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A
VS-80PF(R)...(W) High Voltage Series Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 80PF(R)... 80PF(R)...W DO-5 (DO-203AB) DO-5 (DO-203AB) PRIMARY CHARACTERISTICS I F(AV) 80 A Package
VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series Power Rectifiers Diodes (T-Modules), 40 A to 110 A
Power Rectifiers Diodes (T-Modules), A to A FEATURES Electrically isolated base plate D-55 (T-module) Types up to V RRM 35 V RMS isolating voltage Simplified mechanical designs, rapid assembly High surge
HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A
VS-HF6P20CPbF, VS-HF6P20C-N3 HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 FETURES Ultrafast and ultrasoft recovery node TO-247C Base common cathode 2 3 2 Common cathode node 2 PRODUCT SUMMRY Package TO-247C
High Performance Schottky Rectifier, 2 x 3.5 A
High Performance Schottky Rectifier, 2 x 3.5 VS-6WQ6FN-M3 D-PK (TO-252) Base common cathode 4 2 ommon cathode 1 3 node node PRODUT SUMMRY Package D-PK (TO-252) I F(V) 2 x 3.5 V R 6 V V F at I F See Electrical