Thyristor High Voltage, Phase Control SCR, 30 A

Transcription

1 Thyristor High Voltage, Phase ontrol SR, 30 2 () FETURES High voltage (up to 1600 V) Designed and qualified according to JEDE -JESD47 TO (K) (G) max. operating junction temperature Material categorization: For definitions of compliance please see vailable PRODUT SUMMRY Package TO-247 Diode variation Single SR I T(V) 20 V DRM /V RRM 1600 V V TM 1.3 V I GT 45 m T J -40 to 125 PPLITIONS Typical usage is in input rectification crowbar (soft start) and switch in motor control, UPS, welding and battery charge DESRIPTION The VS-30TPS16... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature. MJOR RTINGS ND HRTERISTIS PRMETER TEST ONDITIONS VLUES UNITS I T(V) Sinusoidal waveform 20 I RMS 30 V RRM /V DRM 1600 V I TSM 300 V T 20, T J = V dv/dt 500 V/μs di/dt 150 /μs T J -40 to 125 VOLTGE RTINGS PRT NUMBER V RRM /V DRM, MXIMUM REPETITIVE PEK ND OFF-STTE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V I RRM /I DRM T 125 m Revision: 06-Feb-14 1 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

2 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average on-state current I T(V) T = 95, 180 conduction half sine wave 20 Maximum RMS on-state current I RMS 30 Maximum peak, one-cycle, non-repetitive surge current I TSM 10 ms sine pulse, no voltage reapplied ms sine pulse, rated V RRM applied ms sine pulse, rated V RRM applied 310 Maximum I 2 t for fusing I 2 t 10 ms sine pulse, no voltage reapplied s Maximum I 2 t for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied s Maximum on-state voltage drop V TM 20, T J = V On-state slope resistance r t 12 m T J = 125 Threshold voltage V T(TO) 1.0 V T J = Maximum reverse and direct leakage current I RM /I DM V R = Rated V RRM /V DRM T J = m Maximum holding current I H node supply = 6 V, resistive load, initial I T = 1, T J = Maximum latching current I L node supply = 6 V, resistive load, T J = Maximum rate of rise of off-state voltage dv/dt T J = T J maximum, linear to 80 % V DRM, R g -k = Open 500 V/µs Maximum rate of rise of turned-on current di/dt 150 /µs TRIGGERING PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G(V) 2.0 W Maximum peak positive gate current + I GM 1.5 Maximum peak negative gate voltage - V GM 10 V node supply = 6 V, resistive load, T J = m node supply = 6 V, resistive load, T J = node supply = 6 V, resistive load, T J = V GT Maximum required D gate voltage to trigger node supply = 6 V, resistive load, T J = node supply = 6 V, resistive load, T J = V node supply = 6 V, resistive load, T J = Maximum D gate voltage not to trigger V GD 0.25 T J = 125, V DRM = Rated value Maximum D gate current not to trigger I GD 2.0 m SWITHING PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Typical turn-on time t gt T J = Typical reverse recovery time t rr 4 µs T J = 125 Typical turn-off time t q 110 Revision: 06-Feb-14 2 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

3 THERML ND MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to 125 Maximum thermal resistance, R thj 0.8 junction to case D operation Maximum thermal resistance, R thj 40 /W junction to ambient Maximum thermal resistance, case to heatsink R ths Mounting surface, smooth and greased 0.2 pproximate weight 6 g 0.21 oz. minimum 6 (5) kgf cm Mounting torque maximum 12 (10) (lbf in) Marking device ase style TO-247 (JEDE) 30TPS16 Maximum llowable ase Temperature ( ) TPS.. Se rie s R thj(d) = 0.8 / W 120 onduction ngle Maximum verage On-state Power Loss (W) RMS Limit onduction ngle 30TPS.. Series T = 125 J verage On-state urrent () verage On-state urrent () Fig. 1 - urrent Rating haracteristics Fig. 3 - On-State Power Loss haracteristics Maximum llowable ase Temperature ( ) TPS.. Series R thj (D) = 0.8 / W onduction Period D Maximum verage On-state Power Loss (W) RMS Limit 20 D onduction Period 30TPS.. Se rie s T = 125 J verage On-state urrent () verage On-state urrent () Fig. 2 - urrent Rating haracteristics Fig. 4 - On-State Power Loss haracteristics Revision: 06-Feb-14 3 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

4 Peak Half Sine Wave On-state urrent () 280 t ny Rated Load ondition nd With Rated V 260 RRM pplied Following Surge. Initial T J= Hz Hz s TPS.. Se rie s Peak Half Sine Wave On-state urrent () Maximum Non Repetitive Surge urrent Versus Pulse Train Duration. ontrol Of onduction May Not Be Maintained. Initial T J= 125 No Voltage Reapplied Rated V RRM Reapplied 30TPS.. Series Number Of Equal mplitude Half ycle urrent Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge urrent Fig. 6 - Maximum Non-Repetitive Surge urrent 1000 Instantaneous On-state urrent () T = 25 J T = 125 J 30TPS.. Se rie s Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop haracteristics Transient Thermal Impedance Z thj ( / W) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Sing le Pu lse Steady State Value (D Operation) 30TPS.. Series Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thj haracteristics Revision: 06-Feb-14 4 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

5 Instantaneous Gate Voltage (V) Rectangular gate pulse a)recommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs VGD TJ = 125 TJ = 25 TJ = -10 (b) (a) IGD 30TPS.. Series Frequency Limited by PG(V) Instantaneous Gate urrent () Fig. 9 - Gate haracteristics (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (4) (3) (2) (1) ORDERING INFORMTION TBLE Device code VS- 30 T P S 16 PbF product 2 - urrent rating (30 = 30 ) 3 - ircuit configuration: T = Thyristor 4 - Package: 5 - P = TO-247 Type of silicon: S = Standard recovery rectifier 6 - Voltage rating (16 = 1600 V) 7 - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-30TPS16PbF ntistatic plastic tubes VS-30TPS16-M ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOUMENTS TO-247 PbF TO-247 -M Revision: 06-Feb-14 5 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

6 DIMENSIONS in millimeters and inches TO-247 Outline Dimensions B (2) R/2 Q (3) E S 2 Ø K M D B M (6) Φ P (Datum B) D2 Φ P1 2 x R (2) D D1 (4) D Thermal pad 4 (5) L1 L See view B (4) E M D B M 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal DDE E (c) c1 (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BS BS b Ø K b L b L b Ø P b Ø P c Q c R D S 5.51 BS BS D Notes (1) Dimensioning and tolerancing per SME Y14.5M-1994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c Revision: 20-pr-17 1 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

7 TO mils L/F Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 Ø K M D B M (6) Φ P (Datum B) D2 Φ P1 2 x R (2) D D1 (4) D Thermal pad 4 (5) L1 L See view B (4) E M D B M 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal DDE E (c) c1 (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BS BS b Ø K b L b L b Ø P b Ø P c Q c R D S 5.51 BS BS D Notes (1) Dimensioning and tolerancing per SME Y14.5M-1994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c and Q Revision: 20-pr-17 1 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

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