HEXFRED Ultrafast Soft Recovery Diode, 30 A

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1 VS-HF3PB2PbF, VS-HF3PB2-N3 HEXFRED Ultrafast Soft Recovery Diode, 3 FETURES Ultrafast and ultrasoft recovery TO-247 modified 2 Base common cathode 2 3 Very low I RRM and Q rr Designed and qualified according to JEDE -JESD47 Material categorization: for definitions of compliance please see BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count vailable 3 athode node PRODUT SUMMRY Package TO-247 modified (2 pins) I F(V) 3 V R 2 V V F at I F 2.3 V t rr typ. 47 ns T J max. 5 Diode variation Single die DESRIPTION VS-HF3PB2... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 2 V and 3 continuous current, the VS-HF3PB2... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HF3PB2... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS athode to anode voltage V R 2 V Maximum continuous forward current I F T = 3 Single pulse forward current I FSM 2 Maximum repetitive forward current I FRM 9 T = Maximum power dissipation P D T = 4 W Operating junction and storage temperature range T J, T Stg -55 to +5 Revision: 4-Jul-5 Document Number: 9469 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

2 VS-HF3PB2PbF, VS-HF3PB2-N3 ELETRIL SPEIFITIONS ( unless otherwise specified) Maximum forward voltage V FM PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS athode to anode breakdown voltage V BR I R = μ I F = 6 See fig I F = V I F = 3, Maximum reverse V R = V R rated I RM See fig. 2 μ leakage current, V R =.8 x V R rated - 4 Junction capacitance T V R = 2 V See fig pf Series inductance L S Measured lead to lead 5 mm from package body nh DYNMI REOVERY HRTERISTIS ( unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Reverse recovery time See fig. 5, Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during t b See fig. 8 t rr I F =., di F /dt = 2 /μs, V R = 3 V t rr - 7 t rr I RRM - 5 I RRM2 I F = Q rr di F /dt = 2 /μs Q rr2 V R = 2 V di (rec)m /dt di (rec)m /dt ns n /μs THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead.63" from case (.6 mm) for s Thermal resistance, junction to case R thj Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque R thj Typical socket mount R ths Mounting surface, flat, smooth and greased /W g oz. Marking device ase style TO-247 modified (JEDE) HF3PB2 6. (5.) - 2 () kgf cm (lbf in) Revision: 4-Jul-5 2 Document Number: 9469 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

3 VS-HF3PB2PbF, VS-HF3PB2-N3 I F - Instantaneous Forward urrent () T J = V F - Forward Voltage Drop (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent I R - Reverse urrent (m) V R - Reverse Voltage (V) Fig. 2 - Typical Reverse urrent vs. Reverse Voltage T - Junction apacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Response.. Single pulse (thermal response) D =.5 D =.2 D =. D =.5 D =.2 D = τ J τ i = τi/ri R R 2 R 3 τ 2 τ 3 t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics τ Ri ( /W) τi (s) Notes:. Duty factor D = t /t 2 2. Peak T J = P DM x Z thj + T Revision: 4-Jul-5 3 Document Number: 9469 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

4 VS-HF3PB2PbF, VS-HF3PB2-N3 t rr (ns) V R = 2 V 5 I F = 6 I F = 3 I F = Q rr (n) I F = 6 I F = 3 I F = 5 2 V R = 2 V di F /dt (/µs) di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt (Per Leg) Fig. 7 - Typical Stored harge vs. di F /dt (Per Leg) I RRM () I F = 6 I F = 3 I F = 5 V rr = 2 V di (rec)m /dt (/µs) V rr = 2 V I F = 5 I F = 3 I F = di F /dt (/µs) di F /dt (/µs) Fig. 6 - Typical Recovery urrent vs. di F /dt (Per Leg) Fig. 8 - Typical di (rec)m /dt vs. di F /dt(per Leg) V R = 2 V. Ω L = 7 μh D.U.T. di F /dt adjust G D IRFP25 S Fig. 9 - Reverse Recovery Parameter Test ircuit Revision: 4-Jul-5 4 Document Number: 9469 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

5 VS-HF3PB2PbF, VS-HF3PB2-N3 (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions ORDERING INFORMTION TBLE Device code VS- HF 3 PB 2 PbF product 2 - HEXFRED family 3 - Electron irradiated 4 - urrent rating (3 = 3 ) 5 - PB = TO-247 modified 6 - Voltage rating: (2 = 2 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-HF3PB2PbF 25 5 ntistatic plastic tube VS-HF3PB2-N ntistatic plastic tube Dimensions Part marking information SPIE model LINKS TO RELTED DOUMENTS TO-247 modified PbF TO-247 modified -N Revision: 4-Jul-5 5 Document Number: 9469 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

6 DIMENSIONS in millimeters and inches TO-247 modified - 5 mils L/F Outline Dimensions B (2) R/2 Q (3) E S 2 (6) Ø P (Datum B) Ø K M D B M Ø P D2 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E 2 x b2 3 x b. M M b4 2 x e View - Plating (b, b3, b5) Base metal DDE E (c) c (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BS.25 BS b Ø K.254. b L b L b Ø P b Ø P c Q c R D S 5.5 BS.27 BS D Notes () Dimensioning and tolerance per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c and Q Revision: 2-pr-7 Document Number: 9554 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

7 Legal Disclaimer Notice Vishay Disclaimer LL PRODUT, PRODUT SPEIFITIONS ND DT RE SUBJET TO HNGE WITHOUT NOTIE TO IMPROVE RELIBILITY, FUNTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHY INTERTEHNOLOGY, IN. LL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

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