Fast Soft Recovery Rectifier Diode, 60 A

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1 VS-6EPF.PbF, VS-6PF.PbF Series Fast Soft Recovery Rectifier Diode, 6 TO-247 modified TO-247 FETURES Designed and qualified according to JEDE-JESD47 ompliant to RoHS Directive 22/95/E Base cathode 2 3 athode node VS-6EPF.. PRODUT SUMMRY Base cathode 2 3 node node VS-6PF.. Package TO-247 modified (2 pins), TO-247 I F(V) 6 V R 2 V, 4 V, 6 V V F at I F.3 V I FSM 83 t rr 7 ns T J max. 5 Diode variation Single die Snap factor.5 PPLITIONS Output rectification and freewheeling in inverters, choppers and converters Input rectifications where severe restrictions on conducted EMI should be met DESRIPTION The VS-6EPF..PbF and VS-6PF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MJOR RTINGS ND HRTERISTIS SYMBOL HRTERISTIS VLUES UNITS V RRM 2 to 6 V I F(V) Sinusoidal waveform 6 I FSM 83 t rr, /μs 7 ns V F 3, T J = 25. V T J - 4 to 5 VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-6EPF2PbF, VS-6PF2PbF 2 3 VS-6EPF4PbF, VS-6PF4PbF 4 5 VS-6EPF6PbF, VS-6PF6PbF 6 7 I RRM T 5 m 5 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average forward current I F(V) T = 6, 8 conduction half sine wave 6 Maximum peak one cycle ms sine pulse, rated V RRM applied 7 I FSM non-repetitive surge current ms sine pulse, no voltage reapplied 83 Maximum I 2 t for fusing I 2 ms sine pulse, rated V RRM applied 245 t 2 s ms sine pulse, no voltage reapplied 346 Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied s Revision: 8-ug- Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

2 VS-6EPF.PbF, VS-6PF.PbF Series ELETRIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum forward voltage drop V FM 6, T J = 25.3 V Forward slope resistance r t 5. m T J = 5 Threshold voltage V F(TO).88 V T J = 25. Maximum reverse leakage current I RM V R = Rated V RRM T J = 5 5. m REOVERY HRTERISTIS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Reverse recovery time t rr IF at 6 pk 8 ns Reverse recovery current I rr 25 /μs 3.4 Reverse recovery charge Q rr 25.5 μ Snap factor S Typical.5 I FM dir dt t rr t a t b t Q rr I RM(RE) THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg - 4 to 5 Maximum thermal resistance, junction to case R thj D operation.4 Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink pproximate weight Mounting torque Marking device R thj 4 R ths Mounting surface, smooth and greased.2 /W 6 g.2 oz. minimum 6 (5) kgf cm maximum 2 () (Ibf in) ase style TO-247 modified ase style TO-247 6EPF2, 6EPF4, 6EPF6 6PF2, 6PF4, 6PF6 Revision: 8-ug- 2 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

3 VS-6EPF.PbF, VS-6PF.PbF Series Maximum llowable ase Temperature ( ) R thj (D) =.4 K/W 6 Ø onduction angle Maximum verage Forward Power Loss (W) RMS limit D Ø onduction period T J = 5 8 verage Forward urrent () verage Forward urrent () Fig. - urrent Rating haracteristics Fig. 4 - Forward Power Loss haracteristics Maximum llowable ase Temperature ( ) R thj (D) =.4 K/W Ø onduction period D Peak Half Sine Wave Forward urrent () t any rated load condition and with rated V RRM applied following surge. Initial T J = 75 at 6 Hz.83 s at 5 Hz. s 2 verage Forward urrent () Fig. 2 - urrent Rating haracteristics Number of Equal mplitude Half ycle urrent Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge urrent Maximum verage Forward Power Loss (W) Ø onduction angle T J = 5 5 RMS limit 6 7 Peak Half Sine Wave Forward urrent () Maximum non-repetitive surge current versus pulse train duration. Initial T J = 95 No voltage reapplied Rated V RRM reapplied.. verage Forward urrent () Pulse Train Duration (s) Fig. 3 - Forward Power Loss haracteristics Fig. 6 - Maximum Non-Repetitive Surge urrent Revision: 8-ug- 3 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

4 VS-6EPF.PbF, VS-6PF.PbF Series Instantaneous Forward urrent () T J = 25 T J = Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop haracteristics.2 4 t rr - Maximum Reverse Recovery Time (µs).5. I FM = 6 I FM = 3 I FM = I FM = 5 T J = 25 I FM = Q rr - Maximum Reverse Recovery harge (µ) 3 2 T J = 25 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 8 - Recovery Time haracteristics, T J = 25 Fig. - Recovery harge haracteristics, T J = 25 t rr - Maximum Reverse Recovery Time (µs) I FM = 6 I FM = 3 I FM = I FM = 5.5 I T J = 5 FM = Q rr - Maximum Reverse Recovery harge (µ) T J = 5 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 9 - Recovery Time haracteristics, T J = 5 Fig. - Recovery harge haracteristics, T J = 5 Revision: 8-ug- 4 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

5 VS-6EPF.PbF, VS-6PF.PbF Series I rr - Maximum Reverse Recovery urrent () T J = 25 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = I rr - Maximum Reverse Recovery urrent () T J = 5 I FM = 6 I FM = 3 I FM = I FM = 5 I FM = di/dt - Rate of Fall of Forward urrent (/µs) di/dt - Rate of Fall of Forward urrent (/µs) Fig. 2 - Recovery urrent haracteristics, T J = 25 Fig. 3 - Recovery urrent haracteristics, T J = 5 Z thj - Transient Thermal Impedance (K/W). Single pulse D =.5 D =.33 D =.25 D =.7 D = Square Wave Pulse Duration (s) Steady state value (D operation) Fig. 4 - Thermal Impedance Z thj haracteristics Revision: 8-ug- 5 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

6 VS-6EPF.PbF, VS-6PF.PbF Series ORDERING INFORMTION TBLE Device code VS- 6 E P F 6 PbF product 2 - urrent rating (6 = 6 ) 3 - ircuit configuration: E = Single diode, 2 pins = Single diode, 3 pins 4 - Package: P = TO-247/ modified 5 - Type of silicon: F = Fast recovery 6 - Voltage code x = V RRM 7 - PbF = Lead (Pb)-free 2 = 2 V 4 = 4 V 6 = 6 V Dimensions Part marking information SPIE model LINKS TO RELTED DOUMENTS TO-247 modified TO-247 TO-247 modified TO Revision: 8-ug- 6 Document Number: 944 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

7 Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E N S 2 Ø K M D B M (6) Ø P (Datum B) D2 FP 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E. M D B M 2 x b2 3 x b. M M b4 2 x e View - Planting (c) (b, b3, b5) Base metal c DDE E Lead assignments Diodes. - node/open 2. - athode 3. - node (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BS.25 BS b FK b L b L b N 7.62 BS.3 b P c P c Q D R D S 5.5 BS.27 BS Notes () Dimensioning and tolerancing per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c Revision: 6-Jun- Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

8 Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E N S 2 (6) ΦP (Datum B) Ø K M D B M ΦP D2 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E 2 x b2 3 x b. M M b4 2 x e View - Planting (c) (b, b3, b5) Base metal c DDE E Lead assignments Diodes. - node/open 2. - athode 3. - node (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BS.25 BS b K b L b L b N 7.62 BS.3 b P c P c Q D R D S 5.5 BS.27 BS Notes () Dimensioning and tolerance per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c Revision: 2-Jun- Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PRODUTS DESRIBED HEREIN ND THIS DOUMENT RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

9 Legal Disclaimer Notice Vishay Disclaimer LL PRODUT, PRODUT SPEIFITIONS ND DT RE SUBJET TO HNGE WITHOUT NOTIE TO IMPROVE RELIBILITY, FUNTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: -Mar-

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