Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs

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Bryan Shaw
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Qxx15xx & Qxx16xHx Series RoHS Description The 15 mp and 16 mp bi-directional solid state switch series are designed for C switching and phase control applications such as motor speed, temperature

1 Qxx15xx & Qxx16xHx Series RoHS Description The 15 mp and 16 mp bi-directional solid state switch series are designed for C switching and phase control applications such as motor speed, temperature modulation controls, lighting controls, and static switching relays. Standard type components normally operate in Quadrants I & III triggered from C line. lternistor type components only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability. Features & Benefits gency pproval gency gency File Number L Package : E71639 Main Features Symbol Value Unit I T(RMS) 15 & 16 RM /V RRM 400 to 0 V (Q1) 10 to 80 m RoHS Compliant Glass passivated junctions Voltage capability up to 0 V Surge capability up to 200 Electrically isolated L-Package is UL recognized for 2500Vrms Solid-state switching eliminates arcing or pplications contact bounce that create voltage transients No contacts to wear out from reaction of switching events Restricted (or limited) RFI generation, depending on activation point in sine wave Requires only a small gate activation pulse in each half-cycle Schematic Symbol dditional Information G Excellent for C switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are C solid-state switches, light dimmers, power tools, lawn care equipment, home/brown goods and white goods appliances. lternistor Triacs (no snubber required) are used in applications with high inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Datasheet Resources Samples

2 bsolute Maximum Ratings Standard Triac Symbol Parameter Value Unit I T(RMS) I TSM RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, initial = 25 C) Qxx15Ly T C = 80 C Qxx15Ry Qxx15Ny T C = 90 C f = 50 Hz t = 20 ms 167 f = 60 Hz t = 16.7 ms I 2 t I 2 t Value for fusing t p = 8.3 ms s di/dt Critical rate of rise of on-state current f = 120 Hz = 125 C /μs M Peak gate trigger current t p 10 μs M = 125 C 2.0 P G(V) verage gate power dissipation = 125 C 0.5 W T stg Storage temperature range -40 to 150 ºC Operating junction temperature range -40 to 125 ºC Note: xx = voltage, y = sensitivity bsolute Maximum Ratings lternistor Triac (3 Quadrants) Symbol Parameter Value Unit I T(RMS) I TSM RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, initial = 25 C) Qxx16LHy T C = 80 C Qxx16NHy T C = 90 C f = 50 Hz t = 20 ms 167 f = 60 Hz t = 16.7 ms I 2 t I 2 t Value for fusing t p = 8.3 ms s di/dt Critical rate of rise of on-state current f = 120 Hz = 125 C /μs M Peak gate trigger current t p 10 μs; M = 125 C 2.0 P G(V) verage gate power dissipation = 125 C 0.5 W T stg Storage temperature range -40 to 150 ºC Operating junction temperature range -40 to 125 ºC Note: xx = voltage, y = sensitivity Electrical Characteristics ( = 25 C, unless otherwise specified) Standard Triac Symbol Test Conditions Quadrant Value Unit = 12V R L = 60 Ω I II III MX. 50 m QIV =12V R L =60Ω IV TYP. m V GT = 12V R L = 60 Ω I II III MX. 2.0 V V GD = RM R L = 3.3 kω = 125 C I II III MIN. 0.2 V I H I T = m MX. 70 m 400V 275 dv/dt = RM Gate Open = 125 C 600V 225 MIN. 800V 200 V/μs = RM Gate Open = C 0V 200 (dv/dt)c (di/dt)c = 8.1 /ms = 125 C MIN. 4 V/μs t gt I G = 2 x PW = 15μs I T = 22.6 (pk) TYP. 4 μs

3 Electrical Characteristics ( = 25 C, unless otherwise specified) lternistor Triac (3 Quadrants) Symbol Test Conditions Quadrant Qxx16xH2 Qxx16xH3 Qxx16xH4 Qxx16xH6 Unit = 12V R L = 60 Ω I II III MX m V GT = 12V R L = 60 Ω I II III MX. 1.3 V V GD = RM R L = 3.3 kω = 125 C I II III MIN. 0.2 V I H I T = m MX m 400V dv/dt = RM Gate Open = 125 C 600V MIN. 800V V/μs = RM Gate Open = C 0V (dv/dt)c (di/dt)c = 8.6 /ms = 125 C MIN V/μs t gt I G = 2 x PW = 15μs I T = 22.6 (pk) TYP μs Static Characteristics Symbol Test Conditions Value Unit V TM 15 Component I T = 21.2 t p = 380μs MX 1.60 V 16 Device I T = 22.6 t p = 380μs = 25 C 400-0V 5 μ I DRM I RRM = RM / V RRM = 125 C V MX 2 = C 0V 3 m Thermal Resistances Symbol Parameter Value Unit Qxx15Ry Qxx15Ny 1.7 R θ(j-c) Junction to case (C) Qxx16NHy C/W Qxx15Ly Qxx16LHy 2.1 R θ(j-) Junction to ambient Qxx15Ry 45 Qxx15Ly Qxx16LHy 50 C/W Note: xx = voltage; y = sensitivity Figure 1: Definition of Quadrants Figure 2: Normalized DC Gate Trigger Current for ll Quadrants vs. Junction Temperature (-) - LL POLRITIES RE REFERENCED TO REF POSITIVE (Positive Half Cycle) QII QIII + QI QIV (+) REF + Ratio of / ( = 25ºC) (-) (+) REF - NEGTIVE (Negative Half Cycle) REF Junction Temperature ( +125 Note: lternistors will not operate in QIV

4 Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: Normalized DC Gate Trigger Voltage for ll Quadrants vs. Junction Temperature Ratio of I IH / I IH ( = 25ºC) Ratio of V GT / V GT ( = 25ºC) Junction Temperature ( Junction Temperature ( +125 Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. On-State Current (15 devices) verage On-State Power Dissipation [P D(V) ] - Watts RMS On-State Current [I T(RMS) ] - MPS Max llowable Case Temperature (T C Qxx15L5 CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive o CONDUCTION NGLE: 360 CSE TEMPERTURE: Measured as shown on dimensional drawing Qxx15R5 Qxx15N RMS On-State Current [I T(RMS) ] - MPS Figure 7: Maximum llowable Case Temperature vs. On-State Current (16 devices) Figure 8: Maximum llowable mbient Temperature vs. On-State Current Max llowable Case Temperature (T C Qxx16LHy Qxx16NHy CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 360 CSE TEMPERTURE: Measured as shown on dimensional drawing RMS On-State Current [I T(RMS) ] - MPS Max llowable mbiant Temperature (T CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 360 CSE TEMPERTURE: Measured as shown on dimensional drawing Qxx15Ry Qxx15L Qxx16LHy RMS On-State Current [I T(RMS) ] - MPS

5 Temperature Teccor brand Thyristors Figure 9: On-State Current vs. On-State Voltage (Typical) Positive or Negative Instantaneous On-State Current(i T ) - MPS = 25ºC Positive or Negative Instantaneous On-State Voltage (v T ) - Volts Figure 10: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-Repetitive) On-State Current (I TSM ) - MPS 0 Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State [I T(RMS) ]: Max Rated Value at Specific Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration - Full Cycles 0 Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 150 C Pb Free assembly T P t P Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) Ramp-up Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C T S(min) 25 t S time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C

6 Physical Specifications Environmental Specifications Terminal Finish Body Material Terminal Material Design Considerations % Matte Tin-plated UL recognized epoxy meeting flammability classification 94V-0 Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 125 C for 8 hours MIL-STD-750, M-1051, cycles; -40 C to +150 C; 15-min dwell time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 8 hours; 150 C 8 hours; -40 C MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab Common with Center Lead T C MESURING POINT RE (REF.) 0.17 IN E B C D O P B C D E F G G F L H R NOTCH IN LED TO ID. NON-ISOLTED TB H J K L M K J N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). N O P R

7 Dimensions TO-220B (L-Package) Isolated Mounting Tab E B C D T C MESURING POINT RE (REF.) 0.17 IN 2 O P B C D E F G F H G L H R J K L K J N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). M N O P R Dimensions TO-263B (N-Package) D 2 Pak Surface Mount B V T C MESURING POINT C E RE: 0.11 IN B C D S E W G D F K H U J F G H J K S V U W

8 Product Selector Voltage Gate Sensitivity Quadrants Part Number Type Package 400V 600V 800V 0V I II III Qxx15L5 X X X X 50 m Standard Triac TO-220L Qxx15R5 X X X X 50 m Standard Triac TO-220R Qxx15N5 X X X X 50 m Standard Triac TO-263 D²-PK Qxx16LH2 X X X X 10 m lternistor Triac TO-220L Qxx16RH2 X X X X 10 m lternistor Triac TO-220R Qxx16NH2 X X X X 10 m lternistor Triac TO-263 D²-PK Qxx16LH3 X X X X 20 m lternistor Triac TO-220L Qxx16RH3 X X X X 20 m lternistor Triac TO-220R Qxx16NH3 X X X X 20 m lternistor Triac TO-263 D²-PK Qxx16LH4 X X X X 35 m lternistor Triac TO-220L Qxx16RH4 X X X X 35 m lternistor Triac TO-220R Qxx16NH4 X X X X 35 m lternistor Triac TO-263 D²-PK Qxx16LH6 X X X X 80 m lternistor Triac TO-220L Qxx16RH6 X X X X 80 m lternistor Triac TO-220R Qxx16NH6 X X X X 80 m lternistor Triac TO-263 D²-PK Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx15L/RyTP Qxx15L/Ry 2.2 g Tube Pack 500 (50 per tube) Qxx15NyTP Qxx15Ny 1.6 g Tube 500 (50 per tube) Qxx15NyRP Qxx15Ny 1.6 g Embossed Carrier 500 Qxx16L/RHyTP Qxx16L/RHy 2.2 g Tube Pack 500 (50 per tube) Qxx16NHyTP Qxx16NHy 1.6 g Tube 500 (50 per tube) Qxx16NHyRP Qxx16NHy 1.6 g Embossed Carrier 500 Note: xx = Voltage; y = Sensitivity

9 Teccor brand Thyristors TO-263 Embossed Carrier Reel Pack (RP) Meets all EI Standards 0.63 (16.0) (4.0) DI (1.5) Gate (24.0) (21.0) * * Cover tape (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (25.7) Direction of Feed Part Numbering System DEVICE TYPE Q: Triac or lternistor VOLTGE RTING 40: 400V 60: 600V 80: 800V K0: 0V CURRENT RTING 15: 15 16: 16 Q L H4 56 LED FORM DIMENSIONS xx: Lead Form Option SENSITIVITY & TYPE Standard Triac 5: 50m (QI, II, III) lternistor Triac H2: 10m (QI, II, III) H3: 20m (QI, II, III) H4: 35m (QI, II, III) H6: 80m (QI, II, III) PCKGE TYPE L: TO-220 Isolated R: TO-220 Non-Isolated N: TO-263 (D 2 -Pak) Part Marking System TO-220 B - (L and R Package) TO-263 B - (N Package) Q6016RH4 YM Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code

Teccor brand Thyristors 10 Amp Standard & Alternistor (High Communitation) Triacs. Qxx10xx & Qxx10xHx Series. Description

Teccor brand Thyristors 10 Amp Standard & Alternistor (High Communitation) Triacs. Qxx10xx & Qxx10xHx Series. Description Qxx10xx & Qxx10xHx Series RoHS Description 10 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,