DK208D Rectifier Diode
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- Opal Wheeler
- 5 years ago
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1 DK208D Rectifier Diode RoHS Description This DK208D 8, 1200V rated standard recovery rectifier diode in a compact TO-252 surface mount package is ideal as a bypass diode or anti-parallel diode for active switching component. Features & Benefits Schematic Symbol Standard recovery rectifier Voltage capability up to 1200V 50Hz surge capability up to 150 High di/dt capability Halogen free and RoHS compliant Main Features K pplications Typical applications are high voltage pulse generator using capacitor discharge such as electric fences and stun guns, and high voltage to converter seen in small EV / E-bike charger systems. Symbol Value Unit I T(RMS) 8 V RRM 1200 V bsolute Maximum Ratings Symbol Parameter Test Conditions Value Unit I F(RMS) RMS forward current 12.6 T C = 113 C I F(V) verage forward current 8.0 single half cycle; f = 50Hz; 150 (initial) = 25 C I FSM Peak non-repetitive surge current single half cycle; f = 60Hz; 180 (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms s di/dt Critical rate of rise of on-state current f = 50Hz ; = 50 C 100 /μs T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 150 C
2 Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Parameter Test Conditions Value Unit t rr Reverse-recovery Time I F =0.9, I R =1.5 TYP. 4 μs Static Characteristics Symbol Test Conditions Value Unit V FM I T = 8; t p = 380μs MX. 1.2 V I RM V RRM = 25 C 20 = 125 C MX. 500 μ = 150 C 1000 Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) 1.4 C/W Figure 1: On-State Current vs. On-State Voltage (Typical) Figure 2: Power Dissipation vs. verage Forward On- State Current (Typical) Instantaneous Forward Current (i F ) mps 120 = 25 C verage Forward Power Dissipation [P F(V) ] - (Watts) Instantaneous Forward Voltage (v F ) Volts verage Forward Current [I F(V) ] - mps
3 Temperature Teccor brand Thyristors Figure 3: Maximum llowable Case Temperature vs. verage On-State Current 150 Maximum llowable Case Temperature (T C ) - C verage Forward Current [I F(VE) ] - mps Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 150 C Pb Free assembly T P t P Pre Heat - Temperature Max (T s(max) ) 200 C Ramp-up - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak T L T S(max) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate - Temperature (T L ) (Liquidus) 217 C Reflow - Time (t L ) seconds Peak Temperature (T P ) /-5 C T S(min) 25 t S time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C DK208D Dxx15L & rectifier Dxx20L diode & Dxx25L Series
4 Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations 100% Matte Tin Plated UL Recognized epoxy meeting flammability rating V-0 Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the rectifier. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test High Temperature Voltage Blocking Temperature Cycling Biased Temperature & Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Moisture Sensitivity Level Specifications and Conditions MIL-STD-750: Method 1040, Condition Rated V RRM, 150 C, 168 hours MIL-STD-750: Method C to 125 C, 15-minute dwell, 100 cycles EI/JEDEC: JESD V, 85 C, 85%RH, 168 hours MIL-STD-750: Method C, 1008 hours 1008 hours; -40 C MIL-STD-750: Method C, 10 seconds NSI/J-STD-002, Category 3, Test MIL-STD-750: Method 2036, Condition E Level 1, JEDEC-J-STD-020 Dimensions TO-252 (D-Package) D-PK Surface Mount B E D T C MESURING POINT Dimension Inches Millimeters Min Typ Max Min Typ Max B C Cathode I G P Q GTE F O L M N RE: IN 2 K J H C D E F G H I J K L M N O P Q DK208D Dxx15L & rectifier Dxx20L diode & Dxx25L Series
5 Packing Option Part Number Marking Weight Packing Mode Base Quantity DK208DRP DK208D 0.3 g Embossed Carrier 2500 Part Numbering System DEVICE TYPE D: Rectifier VOLTGE RTING K2: 1200V D K2 08 D PCKGE TYPE D: DPK CURRENT RTING 08: 8 Part Marking System DK208D YMLDD Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards (4.0) Gate Dia (1.5) Cathode 0.63 (16.0) (13.3) * * Cover tape (8.0) (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (16.3) Direction of Feed Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at
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