MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

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1 405, 410, 415, 420, 440, and 460 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features Ultrafast 25 ns, 50 ns and 75 ns Recovery Times 175 C Operating Junction Temperature ow Forward Voltage ow eakage Current High Temperature Glass Passivated Junction Reverse Voltage to 600 V Shipped in Plastic Bags, 500 per Bag vailable in Tape and Reel, 1500 per Reel, by dding a R Suffix to the Part Number Pb Free Packages are vailable* Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 Gram (pproximately) Finish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds Polarity: Cathode indicated by Polarity Band UTRFST RECTIFIERS 4.0 MPERES, VOTS XI ED CSE 267 STYE 1 MRKING DIGRM 4xx YYWW = ssembly ocation 4xx = Device Number x = 05, 10, 15, 20, 40, 60 YY = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. Semiconductor Components Industries, C,

2 405, 410, 415, 420, 440, 460 MXIMUM RTINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage verage Rectified Forward Current (Square Wave) (Mounting Method #3 Per Note 2) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase, 60 Hz) V RRM V RWM V R V I F(V) T = 80 C T = 40 C I FSM Operating Junction Temperature & Storage Temperature T J, T stg 65 to +175 C Stresses exceeding Maximum s may damage the device. Maximum s are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERM CHRCTERISTICS Maximum Thermal Resistance, Junction to mbient R J See Note 2 C/W EECTRIC CHRCTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (i F = 3.0, T J = 150 C) (i F = 3.0, T J = 25 C) (i F = 4.0, T J = 25 C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, T J = 150 C) (Rated dc Voltage, T J = 25 C) Maximum Reverse Recovery Time (I F = 1.0, di/dt = 50 / s) (I F = 0.5, i R = 1.0, I REC = 0.25 ) Maximum Forward Recovery Time (I F = 1.0, di/dt = 100 / s, Recovery to 1.0 V) v F i R t rr t fr ns V ns Controlled valanche Energy (Maximum) W aval 5 mj 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 2

3 405, 410, 415, 420, 440, 460 ORDERING INFORMTION G G 410R 410RG G 415R 415RG G 420R 420RG G 440R 440RG G 460FF 460FFG 460R 460RG Device Package Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *These packages are inherently Pb Free. 3

4 405, 410, 415, 420, 440, 460 NOTE 2 MBIENT MOUNTING DT Data shown for thermal resistance junction to ambient (R J ) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPIC VUES FOR R J IN STI IR Mounting ead ength, (IN) Method 1/8 1/4 1/2 3/4 s C/W 2 R J C/W 3 28 C/W MOUNTING METHOD 1 P.C. Board Where vailable Copper Surface area is small. É MOUNTING METHOD 2 Vector Push In Terminals T 28 É MOUNTING METHOD 3 P.C. Board with 1 1/2 x 1 1/2 Copper Surface = 1/2 Board Ground Plane 6

5 405, 410, 415, 420, 440, 460 PCKGE DIMENSIONS XI ED CSE (DO 201D) ISSUE G D K 1 2 NOTES: 1. DIMENSIONING ND TOERNCING PER NSI Y14.5M, CONTROING DIMENSION: INCH. B K INCHES MIIMETERS DIM MIN MX MIN MX B D K STYE 1: PIN 1. CTHODE (PORITY BND) 2. NODE 7

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