MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 5.0 AMPERES, 520 VOLTS
|
|
|
- Lucy Atkins
- 5 years ago
- Views:
Transcription
1 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG SWITCHMODE Power Rectifier These state of the art devices are designed for power factor correction in discontinuous and critical conduction mode. Features 52 V Rating Meets 8% Derating Requirements of Major OEMs ow Forward Voltage Drop ow eakage Ultrafast 95 Nanosecond Recovery Time Reduces Forward Conduction oss EC Q Qualified and PPP Capable NRVUD Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements ll Packages are Pb Free* pplications DCM PFC Designs Switching Power Supplies Power Inverters Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets U 9 25 in Weight: MUR55PFG:. Gram (pproximately) MURD55PFG, NRVUD55PFTG:. Gram (pproximately) MUR55PFG, MURF55PFG:.9 Gram (pproximately) Finish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead and Mounting Surface Temperature for Soldering Purposes: 26 C Max. for Seconds *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. 2 UTRFST RECTIFIER 5. MPERES, 52 VOTS MRKING DIGRMS DPK CSE 69C STYE 8 XI ED CSE 267 STYE Pin : No Connect TO 22C CSE 22B STYE TO 22FP CSE 22E STYE MUR 55PF YYWW YWW U 55G Y WWG MUR55PF K YWWG MURF55PF K = ssembly ocation YY, Y = Year WW = Work Week or G = Pb Free Package K = Diode Polarity (Note: Microdot may be in either location) Semiconductor Components Industries, C, 22 January, 22 Rev. 8 Publication Order Number: MUR55/D
2 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG ORDERING INFORMTION Device Package Shipping MUR55PFG xial 5 Units/Bag MUR55PFRG xial,5 Tape & Reel MURD55PFTG NRVUD55PFTG MUR55PFG DPK (Pb Free) DPK (Pb Free) TO 22C (Pb Free) 2,5 Tape & Reel 2,5 Tape & Reel 5 Units/Rail MURF55PFG TO 22FP (Pb Free) 5 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. MXIMUM RTINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage verage Rectified Forward Current (Rated V R ) T C = 65 C (Rated V R ) T C = 6 C Rating Symbol Value Unit MUR55PFG MURD55PFG, NRVUD55PFTG, MUR55PFG, MURF55PFG Non Repetitive Peak Surge Current (Surge pplied at Rated oad Conditions Halfwave, 6 Hz) MUR55PFG NRVUD55PFTG, MURD55PFG MUR55PFG, MURF55PFG V RRM V RWM V R I F(V) I FSM V Operating Junction Temperature Range T J 65 to +75 C Storage Temperature Range T stg 65 to +75 C ESD Ratings: Machine Model = C Human Body Model = B ESD > > 8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERM CHRCTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case (Note ) MURD55PG, MUR55PFG, NRVUD55PFTG MURF55PFG Thermal Resistance, Junction to mbient MUR55PFG NRVUD55PFTG, MURD55PFG (Note ), MURF55PFG. Rating applies when surface mounted on the minimum pad sizes recommended. 2. See Note 2, mbient Mounting Data.. inch square pad size on FR board. EECTRIC CHRCTERISTICS Maximum Instantaneous Forward Voltage Drop (Note ) (I F = 5., T J = ) (I F = 5., T J = 5 C) Maximum Instantaneous Reverse Current (Note ) (V R = 52 V, T J = ) (V R = 52 V, T J = 5 C) R JC R J Note V C/W C/W Characteristic Symbol Value Unit V F.5.98 I R 5. Maximum Reverse Recovery Time (I F =., di/dt = 5 / s, V R = V, T J = ) t rr 95 ns. Pulse Test: Pulse Width = s, Duty Cycle 2.%. V 2
3 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG NOTE 2 MBIENT MOUNTING DT Data shown for thermal resistance junction to ambient (R J ) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPIC VUES FOR R J IN STI IR Mounting ead ength, (IN) Method /8 / /2 / Units C/W 2 R J C/W 28 C/W MOUNTING METHOD P.C. Board Where vailable Copper Surface area is small. É MOUNTING METHOD 2 Vector Push In Terminals T 28 MOUNTING METHOD P.C. Board with /2 x /2 Copper Surface = /2 Board Ground Plane
4 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG I R, REVERSE CURRENT (MPS) i F, INSTNTNEOUS FORWRD CURRENT (MPS) v F, INSTNTNEOUS FORWRD VOTGE (VOTS).E.E.E 5.E 6.E 7.E 8.E 9 5 C Figure. Typical Forward Voltage 5 C 2 V R, REVERSE VOTGE (VOTS) 5 I R, MXIMUM REVERSE CURRENT (MPS) I F, INSTNTNEOUS FORWRD CURRENT (MPS)..E.E.E 5.E 6.E 7.E 8.E 9 5 C V F, MXIMUM INSTNTNEOUS FORWRD VOTGE (VOTS) Figure 2. Maximum Forward Voltage 5 C 2 V R, REVERSE VOTGE (VOTS) 5 Figure. Typical Reverse Current Figure. Maximum Reverse Current I F, VERGE FORWRD CURRENT (MPS) 5 dc SQURE WVE P FO, VERGE POWER DISSIPTION (WTTS) T C, CSE TEMPERTURE ( C) I O, VERGE FORWRD CURRENT (MPS) 2 SQURE WVE dc Figure 5. Current Derating Figure 6. Forward Power Dissipation
5 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG C, CPCITNCE (pf) 5 5 V R, REVERSE VOTGE (VOTS) Figure 7. Capacitance 2 R (t), TRNSIENT THERM RESISTNCE Single Pulse.... Figure 8. Thermal Response for MUR55PFG t DUTY CYCE, D = t / R (t), TRNSIENT THERM RESISTNCE Single Pulse.... Figure 9. Thermal Response for MURD55PFG, NRVUD55PFTG t DUTY CYCE, D = t / 5
6 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG R (t), TRNSIENT THERM RESISTNCE Single Pulse.... Figure. Thermal Response for MUR55PFG t DUTY CYCE, D = t / r(t), TRNSIENT THERM RESPONSE (NORMIZED) ( C/W). D = SINGE PUSE t DUTY CYCE, D = t / Z JC (t) = r(t) R JC R JC =.6 C/W MX D CURVES PPY FOR POWER PUSE TRIN SHOWN RED TIME T t T J(pk) - T C = Z JC (t) Figure. Thermal Response, (MURF55PFG) Junction to Case (R JC ) r(t), TRNSIENT THERM RESPONSE (NORMIZED) ( C/W)... D = SINGE PUSE... t DUTY CYCE, D = t / Z JC (t) = r(t) R JC R JC =.6 C/W MX D CURVES PPY FOR POWER PUSE TRIN SHOWN RED TIME T t T J(pk) - T C = Z JC (t). Figure 2. Thermal Response, (MURF55PFG) Junction to mbient (R J ) 6
7 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG PCKGE DIMENSIONS XI ED CSE ISSUE G D K 2 NOTES:. DIMENSIONS ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH OBSOETE, NEW STNDRD B K INCHES MIIMETERS DIM MIN MX MIN MX B D K STYE : PIN. CTHODE (PORITY BND) 2. NODE DPK (SINGE GUGE) CSE 69C ISSUE D b2 e E b 2 b D B DETI c.5 () M C C c2 H 2 GUGE PNE DETI ROTTED 9 CW H C Z SETING PNE NOTES:. DIMENSIONING ND TOERNCING PER SME Y.5M, CONTROING DIMENSION: INCHES.. THERM PD CONTOUR OPTION WITHIN DI- MENSIONS b, and Z.. DIMENSIONS D ND E DO NOT INCUDE MOD FSH, PROTRUSIONS, OR BURRS. MOD FSH, PROTRUSIONS, OR GTE BURRS SH NOT EXCEED.6 INCHES PER SIDE. 5. DIMENSIONS D ND E RE DETERMINED T THE OUTERMOST EXTREMES OF THE PSTIC BODY. 6. DTUMS ND B RE DETERMINED T DTUM PNE H. INCHES MIIMETERS DIM MIN MX MIN MX b b b c c D E e.9 BSC 2.29 BSC H REF 2.7 REF 2.2 BSC.5 BSC Z 55.9 SODERING FOOTPRINT* SCE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. 7
8 MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG PCKGE DIMENSIONS TO 22 TWO ED CSE 22B ISSUE E Q H B G D K F T U R J C S NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH. INCHES MIIMETERS DIM MIN MX MIN MX B C D F G H J K Q R S T U STYE : PIN. CTHODE 2. N/. NODE. CTHODE TO 22 FUPK, 2 ED CSE 22E ISSUE K F Q H B 2 Y G N D 2 P.25 () M B M Y U C T S J R SETING PNE NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH. INCHES MIIMETERS DIM MIN MX MIN MX B C D F G BSC 2.5 BSC H J K N.2 BSC 5.8 BSC Q R S U STYE : PIN. CTHODE 2. N/. NODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERING INFORMTION ITERTURE FUFIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 US Phone: or 8 86 Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative MUR55/D
MUR2100E. Ultrafast E Series with High Reverse Energy Capability ULTRAFAST RECTIFIER 2.0 AMPERES, 1000 VOLTS
Preferred Device SWITCHMODE Power Rectifier Ultrafast E Series with High Reverse Energy Capability These state of the art devices are designed for use in switching power supplies, inverters and as free
MUR220. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 2.0 AMPERES 200 VOLTS
MUR22 Preferred Device SWITCHMODE Power Rectifier These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. eatures Ultrafast 25 Nanosecond
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS
MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching
MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art
MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS
MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction
MURB1620CTG NRVUB1620CTT4G. SWITCHMODE Power Rectifier. D 2 PAK Power Surface Mount Package ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
URB62CTG, NRVUB62CTTG SWITCHODE Power Rectifier D 2 PK Power Surface ount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes.
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460
405, 410, 415, 420, 440, 460 420 and 460 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free
MBRB20200CTG, SBRB20200CTT4G. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V
BRBCTG, SBRBCTTG SWITCHODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high
MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS
MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G. SWITCHMODE Power Rectifier 100 V, 20 A SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS
MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG SWITCHMODE Power Rectifier V, 2 eatures and Benefits ow orward Voltage:.6 V @ 25 C ow Power oss/high Efficiency High Surge Capacity 75 C Operating Junction Temperature
MURB1620CTG. D 2 PAK Power Surface Mount Package ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
URB62CT Preferred Device SWITCHODE Power Rectifier D 2 PK Power Surface ount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes.
MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG. SWITCHMODE Power Rectifier 60 V, 30 A
MBRB3H6CT-G, MBR3H6CTG, MBR3H6CTG, MBRB3H6CTTG, NRVBB3H6CTTG, MBRJ3H6CTG SWITCHMODE Power Rectifier 6 V, 3 eatures and Benefits ow orward Voltage ow Power oss/high Efficiency High Surge Capacity 75 C Operating
Distributed by: www.jameco.com -8-8-22 The content and copyrights of the attached material are the property of its owner. BRBCT Preferred Device SWITCHODE Power Rectifier Surface ount Power Package The
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G. SWITCHMODE Power Rectifier. D 2 PAK Surface Mount Power Package
BRBCTG, NRVBBCTTG, NRVBBSCTTG SWITCHODE Power Rectifier Surface ount Power Package The Power Rectifier is a state of the art device that employs the use of the Schottky Barrier principle with a platinum
MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package
MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.
MUR490E, MUR4100E. Ultrafast E Series with High Reverse Energy Capability ULTRAFAST RECTIFIERS 4.0 AMPS, VOLTS
MUR4E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability These state of the art devices are designed for use in switching power supplies, inverters
MUR120 Series. SWITCHMODE Power Rectifiers MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 ULTRAFAST RECTIFIERS 1.0 AMPERE, VOLTS
MUR12 Series SWITCHMODE Power Rectifiers MUR15, MUR11, MUR115, MUR12, MUR13, MUR14, MUR16 The MUR12 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and
MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection
MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM13LT1G, NRVBM13LT1G, MBRM13LT3G, NRVBM13LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G. SWITCHMODE Power Rectifiers. TO 220/D 2 PAK Surface Mount Power Package
BRB6CT, BR6CT, NRVBB6CTT SWITCHODE Power Rectifiers TO 2/D 2 PK Surface ount Power Package These state of the art devices employ the use of the Schottky Barrier principle with a platinum barrier metal.
MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
NTST40100CTG, NTSB40100CT-1G, NTSB40100CTG, NTSJ40100CTG. Very Low Forward Voltage Trench-based Schottky Rectifier
NTSTCTG, NTSBCT-G, NTSBCTG, NTSJCTG Very ow orward Voltage Trench-based Schottky Rectifier Exceptionally ow V =.38 V at I = 5 3 PIN CONNECTIONS 2, eatures ine ithography Trench based Schottky Technology
MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
MBR1635, MBR1645, MBRB1645
BR5, BR5, BRB5 BR5 is a Preferred Device SWITCHODE Power Rectifiers, 5 and 5 These state of the art devices use the Schottky Barrier principle with a platinum barrier metal. eatures uard ring for Stress
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
NTST20100CT, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG. Very Low Forward Voltage Trench-based Schottky Rectifier
NTST0CT, NTSB0CT-1G, NTSJ0CTG, NTSB0CTG Very ow orward Voltage Trench-based Schottky Rectifier Exceptionally ow V = 0.50 V at I = 5 1 3 PIN CONNECTIONS 2, eatures ine ithography Trenchbased Schottky Technology
MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G. Switch mode Power Rectifiers. TO 220/D 2 PAK Surface Mount Power Package
BRB6CT, BR6CT, NRVBB6CTT Switch mode Power Rectifiers TO 2/D 2 PK Surface ount Power Package These state-of-the-art devices employ the use of the Schottky Barrier principle with a platinum barrier metal.
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS
MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
MBR140SF, NRVB140SF. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14SF, NRVB14SF Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
Distributed by: www.jameco.com -800-8-44 The content and copyrights of the attached material are the property of its owner. Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier
MBRB1045, MBRD1045. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS
BRB5, BRD5 Preferred Device SWITCHODE Schottky Power Rectifier Surface ount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal to silicon power diode.
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers
MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS
MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK
Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS
High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
MUR8100E, MUR880E. SWITCHMODE Power Rectifiers. Ultrafast E Series with High Reverse Energy Capability ULTRAFAST RECTIFIERS 8.
MUR8E, MUR88E MUR8E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability The MUR8 and MUR88E diodes are designed for use in switching power supplies,
NL27WZ07. Dual Buffer with Open Drain Outputs
Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V
MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
EMI7204MU, EMI7206MU, EMI7208MU. Four-Six-Eight -Channel EMI Filter with Integrated ESD Protection
EMI7204MU, EMI7206MU, EMI7208MU Four-Six-Eight -Channel EMI Filter with Integrated ESD Protection The EMI720xMU Series is a family of C EMI filters with integrated ESD protection. Its typical component
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. MUR5, MUR55, MUR5, MUR54, MUR56 Preferred Devices SWTCHMODE Power Rectifiers
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS
SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
74HCT157. Quad 2 Input Data Selectors / Multiplexers. High Performance Silicon Gate CMOS
74HCT57 Quad 2 Input Data Selectors / Multiplexers High Performance Silicon Gate CMOS The 74HCT57 is identical in pinout to the S57. The device inputs are compatible with standard CMOS outputs; with pullup
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k
MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
MBRB3030CTLG NRVBB3030CTLG. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 30 VOLTS
MBRB33CTLG, NRVBB33CTLG SWITCHMODE Power Rectifier These state of the art devices use the Schottky Barrier principle with a proprietary barrier metal. Features Dual Diode Construction, May be Paralleled
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
Ultrafast E Series with High Reverse Energy Capability
Ultrafast E Series with High Reverse Energy Capability... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: