MUR1620CTR, MURB1620CTR
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- Clare Gardner
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1 UR1620CTR, URB1620CTR Preferred Device SWITCHODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full wave bridge. eatures Common Anode Dual Rectifier (8.0 A per eg or 16 A per Package) Ultrafast 35 Nanosecond Reverse Recovery Times Exhibits Soft Recovery Characteristics High Temperature Glass Passivated Junction ow eakage 150 C Case Temperature Current Both Case and Ambient Temperatures Epoxy eets U 94 V 25 in Complement to UR1620CT and URB1620CT Common Cathode Device Pb ree Packages are Available echanical Characteristics: Case: Epoxy, olded Weight: UR1620CTR: 1.9 Grams (Approximately) URB1620CTR: 1.7 Grams (Approximately) inish: All External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead Temperature for Soldering Purposes: 260 C ax. for Seconds UTRAAST RECTIIER 16 APERES, 200 VOTS 1 3 TO 220AB CASE 221A STYE 7 2, 4 ARKING DIAGRAS AYWW U1620RG KAK AXIU RATINGS (Per eg) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Symbol Value Unit Average Rectified orward Voltage (Rated V R, T C = 160 C) Per eg Per Total Device Peak Repetitive Surge Current (Rated V R, Square Wave, 20 khz, T C = 140 C) Per Diode Non Repetitive Peak Surge Current (Surge Applied at Rated oad Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature Range V RR V RW V R I (AV) V A I 16 A I S 0 A T J, T stg 65 to +175 C aximum ratings are those values beyond which device damage can occur. aximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected D 2 PAK CASE 418B STYE 5 U1620R = Device Code KAK = Diode Polarity A = Assembly ocation Y = Year WW = Work Week G = Pb ree Package AYWW U1620RG KAK ORDERING INORATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
2 THERA CHARACTERISTICS (Per eg) Rating Symbol Value Unit Thermal Resistance, Junction to Case R JC 2.0 C/W EECTRICA CHARACTERISTICS (Per eg) aximum Instantaneous orward Voltage (Note 1) (i = 8.0 Amps, T C = 25 C) (i = 8.0 Amps, T C = 150 C) aximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, T C = 25 C) (Rated dc Voltage, T C = 150 C) aximum Reverse Recovery Time (I = 1.0 Amp, di/dt = 50 Amps/ s) (I = 0.5 Amp, di/dt = 0 Amps/ s) 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle %. Rating Symbol Value Unit v i R t rr V A ns i, INSTANTANEOUS ORWARD CURRENT (APS) T J = 175 C 25 C C 0 C v, INSTANTANEOUS VOTAGE (VOTS) igure 1. Typical orward Voltage (Per eg) T J = 175 C C C 5 2 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical 1 reverse current for lower voltage selections can 0.5 be estimated from these same curves if V R is 0.2 sufficiently below rated V R C I R, REVERSE CURRENT ( A) I (AV), AVERAGE ORWARD CURRENT (APS) V R, REVERSE VOTAGE (VOTS) igure 2. Typical Reverse Current* (Per eg) SQUARE WAVE RATED V R APPIED dc T C, CASE TEPERATURE ( C) R JC = 2 C/W igure 3. Current Derating, Case (Per eg) 180
3 P (AV), AVERAGE POWER DISSIPATION (WATTS) T J = 175 C SQUARE WAVE I (AV), AVERAGE ORWARD CURRENT (APS) dc igure 4. Power Dissipation (Per eg) r(t), TRANSIENT THERA RESISTANCE (NORAIZED) D = SINGE PUSE t, TIE (ms) P (pk) igure 5. Thermal Response t1 t 2 DUTY CYCE, D = t 1 /t 2 Z JC(t) = r(t) R JC D CURVES APPY OR POWER PUSE TRAIN SHOWN READ TIE AT T 1 T J(pk) T C = P (pk) Z JC(t) C, CAPACITANCE (p) V R, REVERSE VOTAGE (VOTS) igure 6. Typical Capacitance (Per eg)
4 ORDERING INORATION Device Package Shipping UR1620CTR TO Units / Rail UR1620CTRG TO 220 (Pb ree) 50 Units / Rail URB1620CTR D 2 PAK 3 50 Units / Rail URB1620CTRG D 2 PAK 3 (Pb ree) 50 Units / Rail URB1620CTRT4 D 2 PAK / Tape & Reel URB1620CTRT4G D 2 PAK 3 (Pb ree) 800 / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
5 PACKAGE DIENSIONS TO 220 THREE EAD TO 220AB CASE 221A 09 ISSUE AA H Q Z V G B N D A K T U R J S C T SEATING PANE NOTES: 1. DIENSIONING AND TOERANCING PER ANSI Y14.5, CONTROING DIENSION: INCH. 3. DIENSION Z DEINES A ZONE WHERE A BODY AND EAD IRREGUARITIES ARE AOWED. INCHES IIETERS DI IN AX IN AX A B C D G H J K N Q R S T U V Z STYE 7: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE
6 PACKAGE DIENSIONS D 2 PAK 3 CASE 418B 04 ISSUE J T SEATING PANE B G S D 3 P 3 (0.005) T B K C H E V W A W J NOTES: 1. DIENSIONING AND TOERANCING PER ANSI Y14.5, CONTROING DIENSION: INCH B 01 THRU 418B 03 OBSOETE, NEW STANDARD 418B 04. INCHES IIETERS DI IN AX IN AX A B C D E G 0.0 BSC 2.54 BSC H J K N 97 RE 5.00 RE P RE 2.00 RE R RE 0.99 RE S V VARIABE CONIGURATION ZONE R N U STYE 5: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE P VIEW W W VIEW W W VIEW W W 1 2 3
BRHCT, BRBHCT, BRBHCT AXIU RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking V
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MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
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BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
More informationMCR218-2G, MCR218-4G, MCR218-6G
MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
More informationBTA25-600CW3G, BTA25-800CW3G
BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
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Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient alternative
More informationMAC228A. Thyristors. Surface Mount 400V - 800V > MAC228A. Description
MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
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MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
More information2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
More informationP6SMB11AT3G Series. TVS Diodes. Surface Mount > 600W > P6SMB11AT3G Series. Bi-directional. Cathode. Anode. Uni-directional.
P6SMB11AT3G Series Pb Description The P6SMB11AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge
More informationMAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
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Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
More information2N6400 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 16 AMPERES RMS 50 thru 800 VOLTS
Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever halfwave silicon
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Ultrafast E Series with High Reverse Energy Capability... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:
More informationAPT30DQ60BHB APT30DQ60BHB(G) 600V 2X30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
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MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
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Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever
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