MC10EL33, MC100EL33. 5V ECL 4 Divider

MC GHz Low Power Prescaler With Stand-By Mode

2.5 GHz Low Power Prescaler With Stand-By Mode Description The M1295 is a single modulus prescaler for low power frequency division of a 2.5 GHz high frequency input signal. MOSAI V technology is utilized

MC10EP57, MC100EP V / 5V ECL 4:1 Differential Multiplexer

3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open (pulled LOW via the input pulldown resistors) the device can

MM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount

Zener Voltage Regulators mw Surface Mount This series of Zener diodes is packaged in a surface mount package that has a power dissipation of mw. They are designed to provide voltage regulation protection

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier

4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference

NB3N508S. 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output

3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output Description The NB3N508S is a high precision, low phase noise Voltage Controlled Crystal Oscillator (VCXO) and phase lock loop (PLL) that

MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL

Product Preview 3.3VНLVTTL/LVCMOS to ifferential LVPECL Translator escription The is a 3.3 V TTL/CMOS to differential PECL translator. Because PECL (Positive ECL) levels are used, only + 3.3 V and ground

MC10EL16, MC100EL V ECL Differential Receiver

MC0EL6, MC00EL6 5.0 V ECL ifferential Receiver The MC0EL/00EL6 is a differential receiver. The device is functionally equivalent to the E6 device with higher performance capabilities. With output transition

NCS2211. Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode

NS22 Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode Product Description The NS22 is a high performance, low distortion lass A/B audio amplifier. It is capable of delivering

NB3N853531E. 3.3 V Xtal or LVTTL/LVCMOS Input 2:1 MUX to 1:4 LVPECL Fanout Buffer

3.3 V Xtal or LVTTL/LVCMOS Input 2:1 MUX to 1:4 LVPECL Fanout Buffer Description The NB3N853531E is a low skew 3.3 V supply 1:4 clock distribution fanout buffer. An input MUX selects either a Fundamental

P2I2305NZ. 3.3V 1:5 Clock Buffer

3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The

NUF4211MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

4-hannel EMI Filter with Integrated ESD Protection The NUF4211MN is a four channel ( R ) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 100 and = 8.5 pf deliver

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

MC100EP16VS. 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing

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MC10H352. Quad CMOS to PECL* Translator

Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is

NB2879A. Low Power, Reduced EMI Clock Synthesizer

Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic

MC10ELT22, MC100ELT22. 5VНDual TTL to Differential PECL Translator

5VНual TTL to ifferential PECL Translator The MC0ELT/00ELT22 is a dual TTL to differential PECL translator. Because PECL (Positive ECL) levels are used only +5 V and ground are required. The small outline

MC100EL14. 5V ECL 1:5 Clock Distribution Chip

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NB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer

2.5 V / 3.3 V / 5.0 V :4 lock Fanout Buffer Description The NB3L553 is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The NB3L553 specifically guarantees low output to output

NB3N106K. 3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs

3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs Description The is a differential 1:6 Clock fanout buffer with High speed Current Steering Logic (HCSL) outputs optimized for ultra low propagation

NSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m

4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current

NCP51199, NCV DDR 2-Amp Source / Sink V TT Termination Regulator

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MC100EPT V LVTTL/LVCMOS to LVPECL Translator

MCEPT622 3.3V VTT/VCMOS to VPEC Translator Description The MCEPT622 is a 0 Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has

MC10EL52, MC100EL52. 5V ECL Differential Data and Clock D Flip Flop

5 EL ifferential ata and lock Flip Flop escription The M0EL/00EL52 is a differential data, differential clock flip-flop with reset. The device is functionally equivalent to the E452 device with higher

MC1455, MC1455B, NCV1455B. Timers

M, MB, NVB Timers The M monolithic timing circuit is a highly stable controller capable of producing accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if

NCP304A. Voltage Detector Series

Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

NSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor

NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and

MC100EP V 2:1:9 Differential HSTL/PECL/LVDS to HSTL Clock Driver with LVTTL Clock Select and Enable

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P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device

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NBSG53ABAR2. 2.5V/3.3VНSiGe Selectable Differential Clock and Data D Flip Flop/Clock Divider with Reset and OLS*

NBSG3A.V/3.3VНSiGe Selectable Differential Clock and Data D Flip Flop/Clock Divider with Reset and OLS* The NBSG3A is a multi-function differential D flip-flop (DFF) or fixed divide by two (DIV/) clock

NB4N121K. 3.3V Differential 1:21 Differential Fanout Clock Driver with HCSL level Output

3.3V ifferential 1:21 ifferential Fanout lock river with HSL level Output escription The is a lock differential input fanout distribution 1 to 21 HSL level differential outputs, optimized for ultra low

MC100EPT V LVTTL/LVCMOS to LVPECL Translator Description The MC100EPT622 is a 10- Bit LVTTL/LVCMOS to LVPECL translator. Because LVPECL (Positiv

3.3V VTT/VCMOS to VPEC Translator Description The is a 0- Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has an OR- ed enable

MC Micropower Undervoltage Sensing Circuits MICROPOWER UNDERVOLTAGE SENSING CIRCUITS SEMICONDUCTOR TECHNICAL DATA

Micropower Undervoltage Sensing ircuits The M33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended

MC100EPT22/D. MARKING DIAGRAMS* ORDERING INFORMATION SO 8 D SUFFIX CASE 751 KPT22 ALYW TSSOP 8 DT SUFFIX CASE 948R KA22 ALYW

The MC00EPT22 is a dual LVTTL/LVCMOS to differential LVPECL translator. Because LVPECL (Positive ECL) levels are used only +3.3 V and ground are required. The small outline lead package and the single

MC10E V, 5V Dual ECL Output Comparator with Latch

5V, 5V Dual ECL Output Comparator with Latch The MC10E1651 is fabricated using ON Semiconductor s advanced MOSAIC III process. The MC10E1651 incorporates a fixed level of input hysteresis as well as output

MC3488A. Dual EIA 423/EIA 232D Line Driver

Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard

MARKING DIAGRAMS* ORDERING INFORMATION KPT23 ALYW SO 8 D SUFFIX CASE 751 TSSOP 8 DT SUFFIX CASE 948R KA23 ALYW

The MC00EPT23 is a dual differential LVPECL to LVTTL translator. Because LVPECL (Positive ECL) levels are used, only +3.3 V and ground are required. The small outline -lead package and the dual gate design

NB3N108K. 3.3V Differential 1:8 Fanout Clock Data Driver with HCSL Outputs

3.3V Differential 1:8 Fanout Clock Data with HCSL Outputs Description The is a differential 1:8 Clock fanout buffer with High speed Current Steering Logic (HCSL) outputs optimized for ultra low propagation

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3

4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,

12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM

NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high

NB3V8312C. Ultra-Low Jitter, Low Skew 1:12 LVCMOS/LVTTL Fanout Buffer

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NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

NSQA6V8AW5T2 Series Transient Voltage Suppressor

Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.

NB4N840M. 3.3V 3.2Gb/s Dual Differential Clock/Data 2 x 2 Crosspoint Switch with CML Output and Internal Termination

3.3V 3.2Gb/s Dual Differential Clock/Data 2 x 2 Crosspoint Switch with Output and Internal Termination Description The NB4N84M is a high bandwidth fully differential dual 2 x 2 crosspoint switch with inputs/outputs

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

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ADP3120AJCPZ RL. Dual Bootstrapped, 12 V MOSFET Driver with Output Disable

Dual Bootstrapped, 2 V MOSFET Driver with Output Disable The ADP320A is a single Phase 2 V MOSFET gate drivers optimized to drive the gates of both high side and low side power MOSFETs in a synchronous

NBXDBA V, MHz / MHz LVPECL Clock Oscillator

. V, 106.25 MHz / 212.5 MHz LVPECL Clock Oscillator The NBXBA012 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free

MC10E V, -5V Dual ECL Output Comparator with Latch

5V, -5V Dual ECL Output Comparator with Latch The MC10E1652 is fabricated using ON Semiconductor s advanced MOSAIC III process and is output compatible with 10H logic devices. In addition, the device is

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment

MC10EP08, MC100EP V / 5V ECL 2-Input Differential XOR/XNOR

MC0EP0, MC00EP0 3.3V / 5V ECL 2-Input ifferential XOR/XNOR escription The MC0/00EP0 is a differential XOR/XNOR gate. The EP0 is ideal for applications requiring the fastest AC performance available. The

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen

NSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m

NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise

MC10EP142, MC100EP V / 5 VНECL 9 Bit Shift Register

MC0EP42, MCEP42 3.3 V / 5 VНECL Bit Shift Register The MC0EP/EP42 is a bit shift register, designed with byte-parity applications in mind. The MC0/EP42 is capable of performing serial/parallel data into

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

NB4L V / 3.3V Differential LVPECL 2x2 Clock Switch and Low Skew Fanout Buffer

2.5V / 3.3V Differential LVPECL 2x2 Clock Switch and Low Skew Fanout Buffer Description The NB4L6254 is a differential 2x2 clock switch and drives precisely aligned clock signals through its LVPECL fanout

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

NB7L14M. MARKING DIAGRAM* Features

2.5V/3.3V Differential :4 Clock/Data Fanout Buffer/ Translator with CML Outputs and Internal Termination Description The NB7L4M is a differential to 4 clock/data distribution chip with internal source

MC100EPT VНLVTTL/LVCMOS to LVPECL Translator

3.3VНVTT/VCMOS to VPEC Translator The is a 10 Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has an OR ed enable input which

NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.

LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen

MC100LVEP V / 3.3V ECL 2-Input Differential AND/NAND

M00VEP05 2.5V / 3.3V E 2-Input ifferential AN/NAN escription The M00VEP05 is a 2 input differential AN/NAN gate. The M00VEP05 is the low voltage version of the M00EP05 and is functionally equivalent to

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes

NL27WZ07. Dual Buffer with Open Drain Outputs

Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including

MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction

NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch

High-Speed USB 2.0 (480 Mbps) DPST Switch The NLAS723 is a DPST switch optimized for high speed USB 2.0 applications within portable systems. It features ultra low off capacitance, C OFF = 3.0 pf (typ),

NCV1009ZG. 2.5 Volt Reference

V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK

NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

NCP ma, 10 V, Low Dropout Regulator

15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage

MC100EL29. 5VНECL Dual Differential Data and Clock D Flip Flop With Set and Reset

MCE29 5НEC ual ifferential ata and Clock Flip Flop With Set and Reset escription The MCE29 is a dual master slave flip flop. The device features fully differential ata and Clock inputs as well as outputs.

MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection

MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications

MJD44H11 (NPN) MJD45H11 (PNP)

MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

NBXDBA V, 75 MHz / 150 MHz LVPECL Clock Oscillator

. V, 75 MHz / 150 MHz LVPECL Clock Oscillator The NBXBA009 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses a

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8

NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (

NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.

NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

NCS Channel Video Amp with High Definition Reconstruction Filters

3-Channel Video Amp with High Definition Reconstruction Filters Description NCS2563 is a 3 Channel high speed video amplifier with 6th order Butterworth High Definition (HD) reconstruction filters and

NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package

NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry

NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability

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