NBXDBA V, 75 MHz / 150 MHz LVPECL Clock Oscillator
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1 . V, 75 MHz / 150 MHz LVPECL Clock Oscillator The NBXBA009 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide selectable 75 MHz or 150 MHz, ultra low jitter and phase noise LVPECL differential output. This device is a member of ON Semiconductor s PureEdge clock family that provides accurate and precision clock solutions. Available in 5 mm x 7 mm SM (CLCC) package on 16 mm tape and reel in quantities of Features LVPECL ifferential Output Uses High Q Fundamental Mode Crystal and PLL Multiplier Ultra Low Jitter and Phase Noise 0. ps (12 khz 20 MHz) Selectable Output Frequency 75 MHz (default) / 150 MHz Hermetically Sealed Ceramic SM Package RoHS Compliant Operating Range. V ±10% Total Frequency Stability 50 PPM This is a Pb Free evice Applications SAS Gen2 Serial ATA V PIN CLCC LN SUFFIX CASE 88AB ORERING INFORMATION evice Package Shipping NBXBA009LN1TAG MARKING IAGRAM NBXBA009 = NBXBA009 (±50 PPM) 75/150 = Output Frequency (MHz) AA = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package NBXBA009LNHTAG CLCC 6 (Pb Free) CLCC 6 (Pb Free) NBXBA009 75/150 AAWLYYWWG 1000/ Tape & Reel 100/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BR8011/. Crystal PLL Clock Multiplier 1 OE 2 GN Figure 1. Simplified Logic iagram Semiconductor Components Industries, LLC, 2009 October, 2009 Rev. 2 1 Publication Order Number: NBXBA009/
2 OE 1 6 V 2 5 GN Figure 2. Pin Connections (Top View) Table 1. PIN ESCRIPTION Pin No. Symbol I/O escription ÁÁÁ 1 OE LVTTL/LVCMOS Output Enable Pin. When left floating pin defaults to logic HIGH and output is active. ÁÁ Control InputÁÁ See OE pin description Table 2. 2 ÁÁÁÁ LVTTL/LVCMOS ÁÁ Output Frequency Select Pin. Pin will default to logic HIGH when left open. See Output Control Input Frequency Select pin description Table. ÁÁÁ ÁÁÁÁ GN Power Supply ÁÁ Ground 0 V ÁÁÁÁ LVPECL Output ÁÁ Non Inverted Clock Output. Typically loaded with 50 receiver termination resistor to V TT = V 2 V. ÁÁ ÁÁ 5 LVPECL Output Inverted Clock Output. Typically loaded with 50 receiver termination resistor to ÁÁÁ V TT = V 2 V. 6 ÁÁÁ Power SupplyÁÁ Positive power supply voltage. Voltage should not exceed. V ±10%. V Table 2. OUTPUT ENABLE TRI STATE FUNCTION OE Pin Output Pins Open Active HIGH Level Active LOW Level High Z Table. OUTPUT FREQUENCY SELECT Pin Open (pin will float high) Output Frequency (MHz) 75 HIGH Level 75 LOW Level 150 Table. ATTRIBUTES Characteristic Input efault State Resistor ES Protection Human Body Model Machine Model Value 170 k 2 kv 200 V Meets or Exceeds JEEC Standard EIA/JES78 IC Latchup Test 1. For additional Moisture Sensitivity information, refer to Application Note AN800/. Table 5. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Units V Positive Power Supply GN = 0 V.6 V I out LVPECL Output Current Continuous Surge T A Operating Temperature Range 0 to +85 C T stg Storage Temperature Range 55 to +120 C T sol Wave Solder See Figure C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability ma 2
3 Table 6. C CHARACTERISTICS (V =. V ± 10%, GN = 0 V, T A = 0 C to +85 C) (Note 2) Symbol Characteristic Conditions Min. Typ. Max. Units I Power Supply Current ma V IH OE and Input HIGH Voltage 2000 V mv V IL OE and Input LOW Voltage GN mv I IH Input HIGH Current OE I IL Input LOW Current OE V OH V OL Output HIGH Voltage Output LOW Voltage V =. V V =. V V V V V V OUTPP Output Voltage Amplitude 660 mv NOTE: evice will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. evice specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 ohm to V 2 V. See Figure 5. Table 7. AC CHARACTERISTICS (V =. V ± 10%, GN = 0 V, T A = 0 C to +85 C) (Note ) Symbol Characteristic Conditions Min. Typ. Max. Units f OUT Output Clock Frequency = HIGH 75 MHz = LOW 150 f Frequency Stability NBXBA009 (Note ) ±50 ppm NOISE Phase Noise Performance 100 Hz of Carrier 108/ 102 dbc/hz f out = 75 MHz/150 MHz (See Figures and ) 1 khz of Carrier 122/ 116 dbc/hz 10 khz of Carrier 129/ 122 dbc/hz 100 khz of Carrier 129/ 122 dbc/hz 1 MHz of Carrier 17/ 11 dbc/hz 10 MHz of Carrier 161/ 158 dbc/hz t jit ( ) RMS Phase Jitter 12 khz to 20 MHz ps t jitter Cycle to Cycle, RMS 1000 Cycles 2. 8 ps Cycle to Cycle, Peak to Peak 1000 Cycles 1 0 ps Period, RMS 10,000 Cycles 1. ps Period, Peak to Peak 10,000 Cycles ps t OE/O Output Enable/isable Time 200 ns t UTY_CYCLE Output Clock uty Cycle (Measured at Cross Point) A A mv mv % t R Output Rise Time (20% and 80%) ps t F Output Fall Time (80% and 20%) ps t start Start up Time 1 5 ms Aging 1 st Year ppm Every Year After 1 st 1 ppm NOTE: evice will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. evice specification limit values are applied individually under normal operating conditions and not valid simultaneously.. Measurement taken with outputs terminated with 50 ohm to V 2 V. See Figure 5.. Parameter guarantees 10 years of aging. Includes initial stability at 25 C, shock, vibration, and first year aging.
4 Figure. Typical Phase Noise Plot at 75 MHz Figure. Typical Phase Noise Plot at 150 MHz
5 Table 8. RELIABILITY COMPLIANCE Parameter Standard Method Á Shock ÁÁÁÁ MIL ST 8, Method 2002, Condition B Á Solderability ÁÁÁÁ MIL ST 8, Method 200 Á Vibration ÁÁÁÁ MIL ST 8, Method 2007, Condition A Á Solvent Resistance ÁÁÁÁ MIL ST 202, Method 215 Á Thermal Shock Environment ÁÁÁÁ MIL ST 8, Method 1011, Condition A Moisture Level Sensitivity Environment MSL1 260 C per IPC/JEEC J ST 020 ÁÁÁ NBXBA009 river evice Z o = 50 Z o = 50 Receiver evice V TT V TT = V 2.0 V Figure 5. Typical Termination for Output river and evice Evaluation (See Application Note AN8020/ Termination of ECL Logic evices.) Temperature ( C) temp. 260 C 20 0 sec. max. peak C/sec. max. 6 C/sec. max pre heat ramp up cooling reflow Time sec sec. Figure 6. Recommended Reflow Soldering Profile 5
6 PACKAGE IMENSIONS 6 PIN CLCC, 7x5, 2.5P CASE 88AB 01 ISSUE C X 0.15 C 1 A B NOTES: 1. IMENSIONING AN TOLERANCING PER ASME Y1.5M, CONTROLLING IMENSION: MILLIMETERS. TERMINAL 1 INICATOR 0.10 C A1 E2 A 2 TOP VIEW SIE VIEW H E1 A2 A E C SEATING PLANE MILLIMETERS IM MIN NOM MAX A A REF A2 0.6 REF A b BSC BSC E 5.00 BSC E E E.9 BSC e 2.5 BSC H 1.80 REF L R 0.70 REF SOLERING FOOTPRINT* 1 2 e R E 6X C A B 0.05 C 6X b 6 5 BOTTOM VIEW 6X L 2.5 PITCH 6X 1.50 IMENSION: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. PureEdge is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 516, enver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NBXBA009/
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MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
MC10EP57, MC100EP V / 5V ECL 4:1 Differential Multiplexer
3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open (pulled LOW via the input pulldown resistors) the device can
ASM3P2669/D. Peak EMI Reducing Solution. Features. Product Description. Application. Block Diagram
Peak EMI Reducing Solution Features Generates a X low EMI spread spectrum clock of the input frequency. Integrated loop filter components. Operates with a 3.3V / 2.5V supply. Operating current less than
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF64MU is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 5 pf deliver
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
NB3N106K. 3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs
3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs Description The is a differential 1:6 Clock fanout buffer with High speed Current Steering Logic (HCSL) outputs optimized for ultra low propagation
NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NS5S1153 is a DPDT switch for combined true ground audio and USB 2.0 high speed data applications. It allows portable systems to
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MC3488A. Dual EIA 423/EIA 232D Line Driver
Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard
LM339S, LM2901S. Single Supply Quad Comparators
LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Application. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF615FC is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 27 pf deliver
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
The SN74LS64 is a high speed 8-Bit Serial-In Parallel-Out Shift Register. Serial data is entered through a 2-Input AN gate synchronous with the LOW to HIGH transition of the clock. The device features
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection
4-Channel EMI Filter with Integrated ESD Protection The is a four channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 5 pf deliver
NCP5360A. Integrated Driver and MOSFET
Integrated Driver and MOSFET The NCP5360A integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
P1P Portable Gaming Audio/Video Multimedia. MARKING DIAGRAM. Features
.8V, 4-PLL Low Power Clock Generator with Spread Spectrum Functional Description The PP4067 is a high precision frequency synthesizer designed to operate with a 27 MHz fundamental mode crystal. Device
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive