NCS Channel Video Amp with High Definition Reconstruction Filters
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- Todd Bishop
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1 3-Channel Video Amp with High Definition Reconstruction Filters Description NCS2563 is a 3 Channel high speed video amplifier with 6th order Butterworth High Definition (HD) reconstruction filters and 6 db gain. All three channels can accommodate all Component and RGB video signals. All channels can accept DC or AC coupled signals. If AC coupled, the internal clamps are employed. The outputs can drive both AC and DC coupled 5 loads. It is designed to be compatible with most Digital to Analog Converters (DAC) embedded in most video processors. Features Three 6th Order High Definition 3 MHz Filter Internally Fixed Gain = 6 db Transparent Input Clamping for Each Channel DC or AC Coupled Inputs DC or AC Coupled Outputs Integrated Level Shifter Operating Voltage +5 V Available in SOIC Package These are Pb Free Devices Applications Digital Set Top Box DVD and Video Players HDTV Video On Demand (VOD) SOIC D SUFFIX CASE 75 MARKING DIAGRAM* N2563 ALYW A = Assembly Location L = Wafer Lot Y = Year W = Work Week = Pb Free Package (Note: Microdot may be in either location) IN IN2 IN3 V CC PINOUT NCS2563 SOIC OUT OUT2 OUT3 GND ORDERING INFORMATION Device Package Shipping NCS2563DG SOIC (Pb Free) 9 Units / Rail NCS2563DR2G SOIC (Pb Free) 25 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. Semiconductor Components Industries, LLC, 29 March, 29 Rev. 4 Publication Order Number: NCS2563/D
2 PIN FUNCTION AND DESCRIPTION Pin Name Type Description IN Input Video Input for Video Signal featuring a frequency bandwidth compatible with High Definition Video (3 MHz) Channel 2 IN2 Input Video Input 2 for Video Signal featuring a frequency bandwidth compatible with High Definition Video (3 MHz) Channel 2 3 IN3 Input Video Input 3 for Video Signal featuring a frequency bandwidth compatible with High Definition Video (3 MHz) Channel 3 4 VCC Power Device Power Supply Voltage: +5 V 5 GND GND Connected to Ground 6 OUT3 Output HD Video Output 3 Channel 3 7 OUT2 Output HD Video Output 2 Channel 2 OUT Output HD Video Output Channel ATTRIBUTES Characteristics ESD Human Body Model All Pins (Note ) Machine Model Pins to 5 (Note 2) All Output Pins (Note 2) Value kv 4 V 6 V Moisture Sensitivity (Note 3) Level Flammability Rating Oxygen Index: 2 to 34. Human Body Model (HBM): R = 5, C = pf 2. Machine Model (MM) 3. For additional information, see Application Note AND3/D. UL 94 in IN Transparent Clamp 6dB OUT 3 MHz, 6th Order IN2 Transparent Clamp 6dB OUT2 3 MHz, 6th Order IN3 Transparent Clamp 6dB OUT3 3 MHz, 6th Order Figure. Block Diagram 2
3 MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltages V CC.35 V CC 5.5 Vdc Input Voltage Range V I.3 V I V CC Vdc Input Differential Voltage Range V ID V I V CC Vdc Output Current I O 5 ma Maximum Junction Temperature (Note 4) T J 5 C Operating Ambient Temperature T A 4 to +5 C Storage Temperature Range T stg 6 to +5 C Power Dissipation P D (See Graph) mw Thermal Resistance, Junction to Air R JA 2.7 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 4. Power dissipation must be considered to ensure maximum junction temperature (T J ) is not exceeded. Maximum Power Dissipation The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 5 C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the overheated condition for an extended period can result in device burnout. To ensure proper operation, it is important to observe the derating curves. POWER DISSIPATION (mv) TEMPERATURE ( C) Figure 2. Power Dissipation vs Temperature 3
4 DC ELECTRICAL CHARACTERISTICS (V CC = +5. V, T A = 25 C,. F AC coupled inputs, R source = 37.5, 22 F AC coupled outputs into 5 load, referenced to 4 khz, unless otherwise specified) Symbol Characteristics Conditions Min Typ Max Unit V CC Operating Voltage Range V I CC Power Supply Current ma V IN Input Common Mode Voltage Range GND.4 V V OH Output High Voltage 2. V V OL Output Low Voltage 2 mv NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 5 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. AC ELECTRICAL CHARACTERISTICS (V CC = +5. V, T A = 25 C,. F AC coupled inputs, R source = 37.5,22 F AC coupled outputs into 5 load, referenced to 4 khz, unless otherwise specified) Symbol Characteristics Conditions Min Typ Max Unit A VOL Voltage Gain (Note 5) V IN = V db BW Bandwidth of Low Pass Filter db 3 db MHz A R Attenuation (Stopband Reject) f = MHz f = MHz dg Differential Gain A V = +2, R L = 5.2 % dp Differential Phase A V = +2, R L = 5. THD Total Harmonic Distortion V OUT =.4 V PP, f = MHz V OUT =.4 V PP, f = 5 MHz V OUT =.4 V PP, f = 22 MHz x talk Channel to Channel Crosstalk V IN =.4 V PP, f = MHz 6 db SNignal to Noise Ratio* (Note 6) % White Signal, khz to 3 MHz 65 db t PD Propagation Delay Input to Output 2 ns Tg Group Delay Variation* khz to 3 MHz 6 ns NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 5 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. *Guaranteed by design 5. % of tested IC fit to the bandwidth tolerance. 6. SNR = 2 x log (74 mv/rms noise) % 4
5 TYPICAL CHARACTERISTICS T A = 25 C, V CC = 5 V, R source = 37.5,. F AC Coupled Inputs, 22 F AC Coupled Outputs with 5 GAIN (db) V IN = 4 dbm Z OUT = 5.6 MHz, 6 db 33 MHz, 3 db (BW) 3 MHz, db (BW) k k k M M M 5M Figure 3. Gain vs. Frequency GAIN (db) V IN = 4 dbm Z OUT = MHz, 4.5 db MHz, 36 db k k k M M M 5M Figure 4. Attenuation V IN = 4 dbm Z OUT = 5 GAIN (db) MHz k k M M M Figure 5. Flatness Bandwidth. db PSRR (db) khz; 65 db 26 MHz; 3 db 7 2k k M M Figure 6. PSRR vs. Frequency (No Bypass Capacitor) 5M CROSSTALK (db) V IN = 4 dbm Z out = 5 MHz; 65 db 6 7 X talk Hostile MHz; 72 db X talk Adjacent 9 2k k M M 5M Figure 7. Crosstalk vs. Frequency, CH2/CH3 ( F AC Coupled Input, DC Coupled Output) 5
6 TYPICAL CHARACTERISTICS T A = 25 C, V CC = 5 V, R source = 37.5,. F AC Coupled Inputs, 22 F AC Coupled Outputs with 5 VOLTAGE (mv) Input Output mv 6 mv VOLTAGE (V) Input Output 7 mv.4 V 4.5E 6 5E 6 5.5E 6 6E 6 6.5E 6 7E 6 4.5E 6 5E 6 5.5E 6 6E 6 6.5E 6 7E 6 TIME (s) Figure. Small Signal Step Response T r = T f = ns TIME (s) Figure 9. Large Signal Step Response T r = T f =. ns VOLTAGE (V) ns.3.2. Input GND..2.3 Output GND E 6 5E 6 5.2E 6 5.4E 6 TIME (s) Figure. Propagation Delay vs. Time 6
7 APPLICATIONS INFORMATION The NCS2563 triple video driver has been optimized for High Definition video applications covering the requirements of the standards 72p, i and related (RGB). All the 3 channels feature the same specifications and similar behaviors guaranteed by a high channel to channel crosstalk isolation (down to 6 db at MHz). Each channel provides an internal voltage to voltage gain of 2 from its input to its output reducing by the way the number of external components usually needed in the case of some discrete approaches (using stand alone op amps). An internal level shifter is employed shifting up the output voltage by adding an offset of about 2 mv. This avoids sync pulse clipping and allows DC coupled output to the 5 video load. In addition, the NCS2563 integrates a 6 th order Butterworth filter per channel with a 3 db frequency bandwidth of 3 MHz. This allows rejecting out the aliases or unwanted over sampling effects produced by the video DAC. It works the same way for DVD recorders using ADC, this anti aliasing filter (reconstruction filter) will avoid picture quality issue and will help also to filter out parasitic signals caused by EMI interference. A built in diode like clamp is used into the chip for each channel to support AC coupled mode of operation. The clamp is active when the input signal goes below V. V 2.2V Y, R, G, B.2V V PP DAC V. F. F. F IN IN2 IN3 Clamp Clamp Clamp 22 F OUT 22 F OUT2 22 F OUT3 2.2V Z O = Z O = Z O = Pb, Pr.2V.7V PP Figure. AC Coupled Inputs and Outputs Figure shows an example for which the external video source coming from the DAC is AC coupled at the input and output. But thanks to the built in transparent clamp and level shifter the device can operate in different configuration modes depending essentially on the DAC output signal level High and Low and how it fits the input common mode voltage of the video driver. When the configuration is DC Coupled at the Inputs and Outputs the. F and 22 F coupling capacitors are no longer used, the clamps are in that case inactive; this configuration has the big advantage of being relatively low cost with the use of less external components. The input is AC coupled if the input signal amplitude goes over the range V to.4 V or if the video source requires a coupling. In some circumstances it may be necessary to auto bias signals by the addition of a pull up and pull down resistor or only pullup resistor (Typical 7.5 M combined with the internal k pulldown) making the clamp inactive. The output AC coupling configuration has the advantage of eliminating DC ground loop with the drawback of making the device more sensitive to video line or field tilt issues in the case of a too low output coupling capacitor. In some cases it may be necessary to increase the nominal 22 F capacitor value. 7
8 DVD Player or STB +5 V. F F Video SOC R/Pr G/Y B/Pd IN OUT IN2 OUT2 NCS2563 IN3 OUT3 V CC GND F F F 75 Video Cables Video Cables Video Cables 75 R/Pr G/Y B/Pd DAC Load Resistors AC Coupling Caps are Optional Figure 2. Typical Application Circuit
9 PACKAGE DIMENSIONS X B Y Z H G A D 5 4 S C.25 (.) M Z Y S X S.25 (.) M SEATING PLANE Y. (.4) M SOIC NB CASE 75 7 ISSUE AJ N X 45 M K SOLDERING FOOTPRINT* J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.5 (.6) PEIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 75 6 ARE OBSOLETE. NEW STANDARD IS MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.27 BSC.5 BSC H J K M N S SCALE 6: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 27 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCS2563/D
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MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection
4-Channel EMI Filter with Integrated ESD Protection The is a four channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 5 pf deliver
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches
High-Speed USB 2.0 (480 Mbps) DPDT Switches ON Semiconductor s NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company s advanced sub micron CMOS technology,
MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf
NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NLAS5157. Ultra-Low 0.4 SPDT Analog Switch
Ultra-Low.4 SPDT Analog Switch The NLAS5157 is Single Pole Double Throw (SPDT) switch designed for audio systems in portable applications. The NLAS5157 features Ultra Low R ON of.4 typical at = V and.15
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
NLAS6234. Audio DPDT Switch with Noise Suppression
Audio DPDT Switch with Noise Suppression Description The NLAS6234 is a DPDT switch featuring Popless noise suppression circuitry designed to prevent pass through of undesirable transient signals known
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF8MU is a eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 2 pf deliver
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL
Product Preview 3.3VНLVTTL/LVCMOS to ifferential LVPECL Translator escription The is a 3.3 V TTL/CMOS to differential PECL translator. Because PECL (Positive ECL) levels are used, only + 3.3 V and ground
NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
MMSZ2V4T1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZVT Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY
Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NCS ma 200 MHz Current Feedback Op Amp
. ma 2 MHz Current Feedback Op Amp NCS2 is a. ma 2 MHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount