NCS2211. Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode

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NS22 Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode Product Description The NS22 is a high performance, low distortion lass A/B audio amplifier.

1 NS22 Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode Product Description The NS22 is a high performance, low distortion lass A/B audio amplifier. It is capable of delivering W of output power into an speaker bridge tied load (BTL). The NS22 will operate over a wide temperature range, and it is specified for single supply voltage operation for portable applications. It features low distortion performance,.2% typical THD + W and incorporates a shutdown/enable feature to extend battery life. The shutdown/enable feature will reduce the quiescent current to A maximum. The NS22 is designed to operate over the 4 to +5 temperature range, and is available in an lead SOI package and a 3 X 3 mm DFN package. The SOI package is pin compatible with equivalent function and comparable performance to competitive devices as is the DFN package. The DFN has a low thermal resistance of only 7 /W plus has an exposed metal pad to facilitate heat conduction to copper PB material. Low distortion, high power, low quiescent current, and small packaging makes the NS22 suitable for applications including notebook and desktop computers, PDA s, and speaker phones. N22 A L Y W SOI D SUFFIX ASE 75 DFN MN SUFFIX ASE 56BJ MARKING DIAGRAMS N22 ALYW = Specific Device ode = Assembly Location = Wafer Lot = Year = Work Week = Pb Free Package N22 ALYW Features Differential Output. W into an Speaker.5 W into a 4 Speaker Single Supply Operation: 2.7 V to 5.5 V W Output Low Quiescent urrent: ma Max Shutdown urrent <. A Excellent Power Supply Rejection Two Package Options: SOI Package and DFN Pin ompatible with ompetitive Devices These are Pb Free Devices Applications Desktop omputers Notebook omputers PDA s Speaker Phones Games PIN (Note: Microdot may be in either location) NAME PIN ASSIGNMENT DESRIPTION Enable Enable (LOW)/Shutdown (HIGH) 2 Bias Bias Output at (V V EE )/2; Bypass with apacitor to Reduce Noise 3 IN+ Non Inverting Input 4 IN Inverting Input 5 OUT+ Output+ 6 V Positive Supply (Bypass with F in parallel with. F) 7 V EE Negative Supply (onnect to GND for Single Supply Operation) OUT Output ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Semiconductor omponents Industries, LL, 9 December, 9 Rev. 2 Publication Order Number: NS22/D

2 NS22 PIN ONNETIONS for SOI and DFN Enable OUT Bias 2 7 V EE IN+ 3 6 V IN 4 5 OUT+ (Top View) V 6 R R2 R 4 5 ( ) Input + Output (+) 3 R (+) Input R L 2 Bias Filtering 2 R + R Output ( ) 7 V EE Enable Figure. Block Diagram High Low Enable (Note ) Shutdown Enabled. Enable (pin ) must be actively driven for proper operation and cannot be left floating. See ENABLE/SHUTDOWN ONTROL in the specification table for proper logic threshold levels. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltages V 5.5 Vdc Output urrent I O 5 ma Maximum Junction Temperature (Note 2) T J 5 Operating Ambient Temperature T A 4 to +5 Storage Temperature Range T stg 6 to +5 Power Dissipation P D (See Graph) mw Thermal Resistance, Junction to Air SOI Thermal Resistance, Junction to Air DFN (Note 4) JA 7 7 /W Moisture Sensitivity (Note 3) Level Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating onditions is not implied. Extended exposure to stresses above the Recommended Operating onditions may affect device reliability. 2. Power dissipation must be considered to ensure maximum junction temperature (T J ) is not exceeded. 3. For additional information, see Application Note AND3/D 4. As mounted on an xx.5 mm FR4 PB with 65 mm 2 and 2 oz (.34 mm) thick copper heat spreader. Following JEDE JESD/EIA 5., 5.2, 5.3 test guidelines. 2

3 NS22 D ELETRIAL HARATERISTIS (V = +5 V, A VD = 2,, 2 =. F,, unless otherwise specified) Symbol haracteristics onditions Min Typ Max Unit POWER SUPPLY V Operating Voltage Range V I S, ON Power Supply urrent Enabled to 5.5 V T A = 4 to +5 (Note 5) ma I S, OFF Power Supply urrent Shutdown to 5.5 V. A PSRR Power Supply Rejection Ratio to 5.5 V T A = 4 to db ENABLE/SHUTDOWN ONTROL V IH Enable Input High Device Shutdown to 5.5 V V IL Enable Input Low Device Enabled to 5.5 V 9% X V V V GND % x V V OUTPUT HARATERISTIS V OH Output High Voltage From Either Output to GND V OL Output Low Voltage From Either Output to GND V.4.4 V V V out off Differential Output Offset Voltage to 5.5 V (Note 5) T A = 4 to +5 5 mv I O Output urrent Output to Output 35 ma A ELETRIAL HARATERISTIS (V = +5 V, A VD = 2,, 2 =. F,, unless otherwise specified) Symbol haracteristics onditions Min Typ Max Unit FREQUENY DOMAIN PERFORMANE GBW Gain Bandwidth Product 2 MHz Phase Margin A VD = +2,, V = 5 V THD+N Total Harmonic Distortion V = 5 V, f = khz, P =. W into V = 5 V, f = khz, P =.5 W into, f = khz, P =.35 W into, f = khz, P =.25 W into TIME DOMAIN RESPONSE % t ON Turn on delay V = 5 V s t OFF Turn off delay V = 5 V 4 s 5. Guaranteed by design and/or characterization. 3

4 NS22 TYPIAL PERFORMANE HARATERISTIS. 2 =. F 2 =. F. 2 =. F 2 =. F. k k. k k Figure 2. THD + N vs. Frequency (P L = 5 mw) Figure 3. THD + N vs. Frequency (P L = W) A VD = (BTL) A VD = (BTL) 2 =. F 2 =. F 2 =. F. k k 2 =. F. k k Figure 4. THD + N vs. Frequency (P L = 5 mw) Figure 5. THD + N vs. Frequency (P L = W) A VD = (BTL) 2 =. F A VD = (BTL) 2 =. F 2 =. F 2 =. F. k k. k k Figure 6. THD + N vs. Frequency (P L = 5 mw) Figure 7. THD + N vs. Frequency (P L = W) 4

5 NS22 TYPIAL PERFORMANE HARATERISTIS. 2 =. F. 2 =. F 2 =. F 2 =. F. k k. k k Figure. THD + N vs. Frequency (P L = 35 mw) Figure 9. THD + N vs. Frequency (P L = 25 mw). 2 =. F 2 =. F A VD = (BTL). A VD = (BTL) 2 =. F 2 =. F. k k. k k Figure. THD + N vs. Frequency (P L = 35 mw) Figure. THD + N vs. Frequency (P L = 25 mw). 2 =. F 2 =. F A VD = (BTL). 2 =. F 2 =. F A VD = (BTL). k k. k k Figure 2. THD + N vs. Frequency (P L = 35 mw) Figure 3. THD + N vs. Frequency (P L = 25 mw) 5

6 NS22 TYPIAL PERFORMANE HARATERISTIS... 2 =. F... P OUTPUT (W) Figure 4. THD + N vs. P OUTPUT (Frequency = Hz) STEADY STATE POWER (W) Lead DFN 5 mm 2 SOI 5 mm 2 Lead DFN 65 mm 2 Lead DFN 5 mm 2 SOI 65 mm SOI 5 mm 2 T AMBIENT ( ) 25 Figure 5. SOA urve with PB opper Thickness 2 oz and Various Areas 5 2 =. F P out (W) P OUTPUT (W) LOAD RESISTANE ( ) Figure 6. THD + N vs. P OUTPUT (Frequency = khz) Figure 7. P out vs. Load Resistance... 2 =. F... INTERNAL POWER DISSIPATION (W) V = 5 V.5 R L = P OUTPUT (W) OUTPUT POWER (W) Figure. THD + N vs. P OUTPUT (Frequency = khz) Figure 9. Power Dissipation vs. Output Power 6

7 NS22 TYPIAL PERFORMANE HARATERISTIS hannel : Enable Logic and OUT+ and OUT hannel 2: Differential Output Time Base: Sec per Division Figure. Turn on Time hannel : SHUTDOWN Logic and OUT+ and OUT hannel 2: Differential Output Time Base: 5 Sec per Division Figure 2. Turn off Time GAIN (db) PHASE SHIFT (degrees) k k k M M Figure 22. Gain and Phase Shift vs. Frequency 9 M 7

8 NS22 (db) V = 5 V Rf = Rg = k Avd = bypass = F. F 2 =. F Ripple = mv p p TYPIAL PERFORMANE HARATERISTIS k k FREQUENY OF POWER SUPPLY RIPPLE (Hz) Figure 23. Power Supply Rejection

9 NS22 APPLIATIONS INFORMATION The NS22 is unity gain stable and therefore does not require any compensation, but a proper power supply bypass is required as shown in Figure 24. Performance will be enhanced by adding a filter capacitor (2) to the mid supply node (pin 2). See Typical Performance haracteristics for details. It is preferable to A couple the input to avoid a large D output offset. Both outputs can be driven to within 4 mv of either supply rail with an load. Typical Application of the Device: V 6 +5 V 3 F. F ( ) Input. F R k R2 k 5 Output (+) 2 V PP R L (+) Input 2 Bias Filtering 2 + Output ( ). F 7 V EE Enable Figure 24. THERMAL ONSIDERATIONS are must be taken to not exceed the maximum junction temperature of the device (5 ). Figure 5 shows the tradeoff between output power and junction temperature for different areas of exposed PB copper (2 oz). If the maximum power is exceeded momentarily, normal circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in an overheated condition for an extended period can result in device burnout. To ensure proper operation, it is important to observe the SOA curves. GAIN Since the output is differential, the gain from input to the speaker is: A VD = 2 x R2/R. For low level input signals, THD will be optimized by pre amplifying the signal and running the NS22 at gain A VD = 2 and 2= F. BIAS FILTERING Even though the NS22 will operate nominally with no filter capacitor on pin 2, THD performance will be improved dramatically with a filter capacitor installed (see Typical Performance haracteristics). In addition a 2 filter capacitor at pin 2 will suppress start up popping noise. To insure optimal suppression the time constant of the bias filtering needs to be greater than the time constant of the input capacitive coupling circuit, that is 2 x 25 k > x R. ORDERING INFORMATION NS22DG Device Package Shipping SOI (Pb Free) 9 Units / Rail NS22DR2G SOI (Pb Free) 25 / Tape & Reel NS22MNTXG DFN (Pb Free) 3 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. 9

10 NS22 PAKAGE DIMENSIONS DFN 3x3,.5P ASE 56BJ ISSUE O PIN REFERENE 2X X. 2X.5.5 NOTE 4. D ÇÇÇ ÇÇÇ TOP VIEW DETAIL B SIDE VIEW A B E (A3) A A L SEATING PLANE EDGE OF PAKAGE L DETAIL A OPTIONAL ONSTRUTION L DETAIL A OPTIONAL ONSTRUTION NOTES:. DIMENSIONS AND TOLERANING PER ASME Y4.5M, ONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN.5 AND.3 MM FROM TERMINAL. 4. OPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A.. A..5 A3. REF b..3 D 3. BS D E 3. BS E e.5 BS K. L.3.5 L..3 SOLDERMASK DEFINED MOUNTING FOOTPRINT X L D2 4 DETAIL A EXPOSED u MOLD MPD.5 X.35 X K E2 DETAIL B OPTIONAL ONSTRUTION e 5 BOTTOM VIEW X b..5 A B NOTE 3 X.63.5 PITH DIMENSION: MILLIMETERS

11 NS22 PAKAGE DIMENSIONS X B Y A 5 4 S.25 (.) M Y M SOI D SUFFIX ASE 75 7 ISSUE AH K NOTES:. DIMENSIONING AND TOLERANING PER ANSI Y4.5M, ONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.5 (.6) PER SIDE. 5. DIMENSION D DOES NOT INLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXESS OF THE D DIMENSION AT MAXIMUM MATERIAL ONDITION THRU 75 6 ARE OBSOLETE. NEW STANDARD IS Z H G D.25 (.) M Z Y S X S SEATING PLANE. (.4) N X 45 M J MILLIMETERS INHES DIM MIN MAX MIN MAX A B D G.27 BS.5 BS H J K M N S SOLDERING FOOTPRINT* SALE 6: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/ Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 563, Denver, olorado 27 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NS22/D

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