PART MAX2601ESA MAX2602ESA TOP VIEW

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Georgina Moody
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1 9-; Rev 2; /97 VALUATION KIT AVAILAL.6V, W RF Power Transistors General Description The are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three Nid/NiMH cells or one Li-Ion cell. These transistors deliver W of RF power from a.6v supply with efficiency of % when biased for constant-envelope applications (e.g., FM or FSK). For NAD (IS-) operation, they deliver 29dm with -2dc APR from a.v supply. The MAX260 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a highperformance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor s collector current as the temperature changes. The can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFT power amplifiers. Furthermore, a drain switch is not required to turn off the. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device. The are available in thermally enhanced, -pin SO packages, which are screened to the extended temperature range (-0 to + ). The MAX2602 is also available in die form. Features Low Voltage: Operates from Li-Ion or Nid/NiMH atteries D-to-Microwave Operating Range W Output Power at 900MHz On-hip Diode for Accurate iasing (MAX2602) Low-ost Silicon ipolar Technology Does Not Require Negative ias or Supply Switch High fficiency: % Ordering Information PART MAX260SA MAX2602SA MAX2602/D TMP. RANG -0 to + -0 to + -0 to + PIN-PAKAG PSOPII PSOPII Dice* *Dice are specified at T A = +2, D parameters only. Applications Narrow-and PS (NPS) 9MHz ISM Transmitters Microcellular GSM (Power lass ) Pin onfigurations TOP VIW AMPS ellular Phones Digital ellular Phones Two-Way Paging IAS DPD Modems Land Mobile Radios MAX260 PSOPII MAX2602 PSOPII Typical Application ircuit appears at end of data sheet. Maxim Integrated Products For free samples & the latest literature: or phone For small orders, phone ext. 6.

2 ASOLUT MAXIMUM RATINGS ollector-mitter Voltage, Shorted ase (V S )...7V mitter ase Reverse Voltage (V O )...2.V IAS Diode Reverse reakdown Voltage (MAX2602)...2.V Average ollector urrent (I )...200mA ontinuous Power Dissipation (T A = +70 ) PSOPII (derate 0mW/ above +70 ) (Note )...6.W Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. xposure to absolute maximum rating conditions for extended periods may affect device reliability. D LTRIAL HARATRISTIS (T A = T MIN to T MAX, unless otherwise noted.) PARAMTR ollector-mitter reakdown Voltage ollector-mitter Sustaining Voltage SYMOL Operating Temperature Range...-0 to + Storage Temperature Range...-6 to +6 Junction Temperature...+0 Lead Temperature (soldering, 0sec) Note : ackside slug must be properly soldered to ground plane (see Slug Layout Techniques section). V O Open base I < 00µA V S Shorted base LV O I = 200mA ONDITIONS MIN TYP MAX.0 UNITS V V ollector-ase reakdown Voltage V O I < 00µA, emitter open V D urrent Gain ollector utoff urrent Output apacitance h F I S O I = 20mA, V = V V = 6V, V = 0V V = V, I = 0mA, f = MHz µa pf A LTRIAL HARATRISTIS (Test ircuit of Figure, V =.6V, V = 0.70V, Z LOAD = Z SOUR = 0Ω, P OUT = 0dm, f = 6MHz, T A = +2, unless otherwise noted.) Frequency Range ase urrent Harmonics Power Gain PARAMTR ollector fficiency SYMOL f I 2fo, fo η (Note 2) ONDITIONS V =.6V, P OUT = 0dm V =.0V, P OUT = 29dm P OUT = 0dm No modulation MIN TYP MAX D UNITS GHz ma dc dc d % Stability under ontinuous Load Mismatch onditions V SWR V =.V, all angles (Note ) : Two-Tone IMR Noise Figure IM IM NF P OUT = +0dm total power, f = MHz, f2 = 6MHz V = 0.9V dc d Note 2: Guaranteed by design. Note : Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dc; b) no parametric degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation capability is observed. 2

3 Typical Operating haracteristics (Test ircuit of Figure, input/output matching networks optimized for specific measurement frequency, V =.6V, V = 0.70V, P OUT = 0dm, Z LOAD = Z SOUR = 0Ω, f = 6MHz, T A = +2, unless otherwise noted.) I (A) OLLTOR URRNT V =.00V V = 0.V V (V) V = 0.9V V = 0.90V V = 0.0V MAX260-0 POUT (dm) TWO-TON OUTPUT POWR AND IM vs. OLLTOR URRNT P OUT, IM, AND IM AR RMS OMPOSIT TWO-TON POWR LVLS I (A) P OUT IM MAX POUT, IM, IM (dm) 2 - TWO-TON OUTPUT POWR, IM, IM vs. INPUT POWR P OUT, IM, AND IM AR RMS OMPOSIT TWO-TON POWR LVLS P OUT IM IM INPUT POWR (dm) MAX260-0 POUT, IM, IM (dm) 2 TWO-TON OUTPUT POWR, IM, IM vs. INPUT POWR (f = MHz) P OUT, IM, AND IM AR RMS OMPOSIT TWO-TON POWR LVLS IM P OUT IM MAX260-0 APR (dc) APR vs. OUTPUT POWR (IS- π/ DQPSK MODULATION, V = 0.V) V V V.2V MAX260-0 FFIINY (%) OLLTOR FFIINY vs. OUTPUT POWR (IS- π/ DQPSK MODULATION, V = 0.V) 60 P OUT, IM, AND IM AR RMS OMPOSIT 0 TWO-TON POWR LVLS.0V V.V.2V MAX INPUT POWR (dm) OUTPUT POWR (dm) OUTPUT POWR (dm) Pin Description MAX260 PIN MAX2602 NAM,, Transistor ollector 2,, 6, 7, Slug 2, 6, 7, Slug Transistor mitter IAS,, Transistor ase FUNTION Anode of the iasing Diode that matches the thermal and process characteristics of the power transistor. Requires a high-rf-impedance, low- D-impedance (e.g., inductor) connection to the transistor base (Pin ). urrent through the biasing diode (into Pin ) is proportional to / the collector current in the transistor.

4 V Ω 0.µF 000pF 00nH RF IN 000pF T 2pF 2pF L = OILRAFT A0T INDUTOR,.nH T, T2 = ", 0Ω TRANSMISSION LIN ON FR- 2Ω L 2, 6, 7 AKSID SLUG 000pF 000pF 0pF 0.µF T2 2pF V Figure. Test ircuit Detailed Description The are high-performance silicon bipolar transistors in power-enhanced, -pin SO packages. The base and collector connections use two pins each to reduce series inductance. The emitter connects to three (MAX2602) or four (MAX260) pins in addition to a back-side heat slug, which solders directly to the P board ground to reduce emitter inductance and improve thermal dissipation. The transistors are intended to be used in the common-emitter configuration for maximum power gain and power-added efficiency. urrent Mirror ias (MAX2602 only) The MAX2602 includes a high-performance silicon bipolar RF power transistor and a thermally matched biasing diode that matches the power transistor s thermal and process characteristics. This diode is used to create a bias network that accurately controls the power transistor s collector current as the temperature changes (Figure 2). The biasing diode is a scaled version of the power transistor s base-emitter junction, in such a way that the current through the biasing diode is / the quiescent collector current of the RF power transistor. Supplying the biasing diode with a constant current source and connecting the diode s anode to the RF power transistor s base ensures that the RF power transistor s quiescent collector current remains constant through Q V R IAS IAS RF IN RF IN Figure 2. ias Diode Application OUT RF OUT temperature variations. Simply tying the biasing diode to the supply through a resistor is adequate in most situations. If large supply variations are anticipated, connect the biasing diode to a reference voltage through a resistor, or use a stable current source. onnect the biasing diode to the base of the RF power transistor through a large RF impedance, such as an RF choke (inductor), and decouple to ground through a surfacemount chip capacitor larger than 000pF. V RF Q2

5 Applications Information Optimum Port Impedance The source and load impedances presented to the have a direct impact upon its gain, output power, and linearity. Proper source- and loadterminating impedances (ZS and ZL) presented to the power transistor base and collector will ensure optimum performance. For a power transistor, simply applying the conjugate of the transistor s input and output impedances calculated from small-signal S-parameters will yield less than optimum device performance. For maximum efficiency at V = 0.7V and V =.6V, the optimum power-transistor source and load impedances (as defined in Figure ) are: At 6MHz: ZS =. + j2.0 ZL = 6. + j. At MHz: ZS = 9. - j2. ZL =. - j. ZS and ZL reflect the impedances that should be presented to the transistor s base and collector. The package parasitics are dominated by inductance (as shown in Figure ), and need to be accounted for when calculating ZS and ZL. The internal bond and package inductances shown in Figure should be included as part of the endapplication matching network, depending upon exact layout topology. Slug Layout Techniques The most important connection to make to the is the back side. It should connect directly to the P board ground plane if it is on the top side, or through numerous plated through-holes if the ground plane is buried. For maximum gain, this connection should have very little self-inductance. Since it is also the thermal path for heat dissipation, it must have low thermal impedance, and the ground plane should be large. 2.nH 2.nH Z S MAX260 MAX2602 Figure. Optimum Port Impedance Z L 2.nH 2.nH

6 Package Information e D A A H 0.0mm 0.00in. L -Pin PSOPII 0 - DIM A A e H L DIM D MIN PINS INHS 0.00 MAX MIN INHS MAX 0.97 MILLIMTRS MIN MAX MIN MILLIMTRS MAX A 6

IF Digitally Controlled Variable-Gain Amplifier

19-2601; Rev 1; 2/04 IF Digitally Controlled Variable-Gain Amplifier General Description The high-performance, digitally controlled variable-gain amplifier is designed for use from 0MHz to 400MHz. The