6500V/µs, Wideband, High-Output-Current, Single- Ended-to-Differential Line Drivers with Enable

Transcription

1 99 Rev ; /99 EVALUATION KIT AVAILABLE 65V/µs, Wideband, High-Output-Current, Single- General Description The // single-ended-todifferential line drivers are designed for high-speed communications. Using current feedback for greater bandwidth, these devices deliver full-power bandwidths up to 5MHz and feature slew rates as high as 65V/µs. The has a fixed gain of +V/V and a small-signal bandwidth of MHz. The / have small-signal bandwidths of MHz and MHz, respectively, and are internally compensated for minimum gain configurations of +V/V and +5V/V, respectively. For greater design flexibility, the / allow for variable gain selection using external gain-setting resistors. A low-power enable mode reduces current consumption below 5.5mA and places the outputs in a high-impedance state. The // can deliver differential output swings of ±6.V from ±5V supplies with a 5Ω load. Excellent differential gain/phase and noise specifications make these amplifiers ideal for a wide variety of video and RF signal-processing and transmission applications. Applications Differential Line Driver Single-Ended-to-Differential Conversion High-Speed Differential Transmitter Coaxial to Twisted-Pair Converter Differential Pulse Amplifier Differential ADC Driver xdsl Applications Video and RF Signal Processing and Transmission Pin Configuration 65V/µs Slew Rate () Small-Signal Bandwidth MHz () MHz () MHz () MHz.dB Gain Flatness () ma Output Drive Current +V/V Internally Fixed Gain () External Gain Selection +V/V () +5V/V () -78dB SFDR at khz Low Differential Gain/Phase:.%/. Ultra-Low Noise: nv/ Hz at fin = MHz 8ns Settling Time to.% +5V Features Ordering Information PART TEMP. RANGE PIN-PACKAGE ESE ESE - C to +85 C - C to +85 C 6 Narrow SO 6 Narrow SO ESE - C to +85 C 6 Narrow SO Typical Operating Circuit // TOP VIEW.µF V CC V CC N.C. N.C. (RG) IN N.C OUT- GND OUT- OUT+ 75Ω 75Ω V CC IN EN GND.µF OUT+ R T R T 75Ω 75Ω TO LOAD 8 9 EN SO ( ) ARE FOR / ONLY V Maxim Integrated Products For price, delivery, and to place orders, please contact Maxim Distribution at , or visit Maxim s website at

2 65V/µs, Wideband, High-Output-Current, Single- // ABSOLUTE MAXIMUM RATINGS V CC to...+v Voltage on IN, EN, OUT+, OUT-, RG...( -.V) to (V CC +.V) Output Short-Circuit Duration to GND...Indefinite Continuous Power Dissipation (T A = +7 C) 6-Pin Narrow SO (derate mw/ C above +7 C)..6mW Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Operating Temperature Range...- C to +85 C Storage Temperature Range C to +5 C Lead Temperature (soldering, s)...+ C (V CC = +5V, = V, V EN V, V OUT = V OUT+ - V OUT-, R L =, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = +5 C.) Operating Supply Voltage Range Input Voltage Range Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Resistance Gain Gain Error Gain Drift PARAMETER Output Voltage Swing Output Current Drive Output Short-Circuit Current Power-Supply Rejection Ratio Output Leakage Current EN Logic Low Threshold EN Logic High Threshold EN Logic Input Low Current EN Logic Input High Current Quiescent Current SYMBOL V CC V CC guaranteed by PSRR test guaranteed by PSRR test V IN V OS TC VOS I B R IN A V V OUT I OUT I SC PSRR I OUT(OFF) V IL V IH I IL I IH I Q Guaranteed by gain-error test V IN = V IN = V IN = -.V V IN.V -6V V OUT 6V CONDITIONS / (Note ) MIN TYP MAX -6/A V +6/A V V V OUT 6V. / -. 5 % V OUT = -. /. %/ C R L = Ω between OUT+ and OUT- ±6. ±7. R L = 5Ω between OUT+ and OUT- ±5. ±6. V R L = Ω between OUT+ and OUT- 9 ma Short circuit to GND ma V S = ±.5V to ±5.5V 5 75 db V EN =, V OUT+ = V OUT- =.5V or -.5V µa.8 V V V EN = -.5 µa V EN = 5V.8 µa V IN =, V EN V IH 6 55 V IN =, V EN V IL. 5.5 ma 5 (+/R G ) UNITS V V mv µv/ C µa kω V/V

3 65V/µs, Wideband, High-Output-Current, Single- AC ELECTRICAL CHARACTERISTICS (V CC = +5V, = V, R L = Ω between OUT+ and OUT-, A VCL = +V/V for /, A VCL = +5V/V for, V OUT = V OUT + - V OUT -, T A = +5 C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX Small-Signal -db Bandwidth BW SS V OUT = mvp-p V OUT = 8Vp-p 5 5 V OUT = Vp-p 6 Large-Signal -db Bandwidth BW LS Large-Signal -db Bandwidth 85 V OUT = Vp-p 5.dB Gain Flatness V OUT = mvp-p 57 V OUT = 8V step 65 Slew Rate (Note ) SR V OUT = V step 7 7 V OUT = V step V OUT = 8V step 85 7 Rise Time (Note ) t RISE V OUT = V step V OUT = V step 5 7 UNITS MHz MHz MHz V/µs ps //

4 65V/µs, Wideband, High-Output-Current, Single- // AC ELECTRICAL CHARACTERISTICS (continued) (V CC = +5V, = V, R L = Ω between OUT+ and OUT-, A VCL = +V/V for /, A VCL = +5V/V for, V OUT = V OUT + - V OUT -, T A = +5 C, unless otherwise noted.) Fall Time (Note ) Settling Time PARAMETER Spurious-Free Dynamic Range nd Harmonic Distortion rd Harmonic Distortion Differential Phase Error Differential Gain Error Input Noise Voltage Density Input Noise Current Density Output Impedance Enable Time Disable Time Power-Up Time Power-Down Time SYMBOL t FALL SFDR DP DG t ON V OUT = 8V step V OUT = V step V OUT = V step NTSC, R L = 5Ω NTSC, R L = 5Ω CONDITIONS f C = 5MHz f C = MHz f C = MHz f C = khz f C = 5MHz f C = MHz f C = MHz f = MHz, each output to ground V IN = V, V OUT settle to within % V IN = V, V OUT settle to within % V IN = V, V OUT settle to within % V IN = V, V OUT settle to within % MIN TYP MAX e N f = MHz (Note ) i N f = MHz.8 Z OUT± t OFF Settle to.%, V OUT = V step V OUT = Vp-p V OUT = Vp-p V OUT = Vp-p f C = khz f C = khz f C = 5MHz f C = MHz f C = MHz UNITS ps ns dbc dbc dbc degrees % nv/ Hz pa/ Hz Ω ns µs µs µs Note : R G is the gain resistor. See Figure. Note : Input step voltage has <ps rise (fall) time. Measured at the output from % to 9% (9% to %) levels. Note : Includes the current noise contribution through the on-die feedback resistor.

5 65V/µs, Wideband, High-Output-Current, Single- Typical Operating Characteristics (V CC = +5V, = V, V EN = +5V, V OUT = V OUT+ - V OUT-, R L = Ω between OUT+ and OUT-, A V = +V/V for /, A V = +5V/V for, T A = +5 C, unless otherwise noted.) SMALL-SIGNAL GAIN vs. FREQUENCY (V OUT = mvp-p) k M M M G GAIN FLATNESS vs. FREQUENCY (V OUT = mvp-p) k M M M G LARGE-SIGNAL GAIN vs. FREQUENCY (V OUT = Vp-p) k M M M G TOC TOC TOC7 SMALL-SIGNAL GAIN vs. FREQUENCY (V OUT = mvp-p) k M M M G GAIN FLATNESS vs. FREQUENCY (V OUT = mvp-p) k M M M G LARGE-SIGNAL GAIN vs. FREQUENCY (V OUT = Vp-p) k M M M G TOC TOC5 TOC8 SMALL-SIGNAL GAIN vs. FREQUENCY (V OUT = mvp-p) k M M M G GAIN FLATNESS vs. FREQUENCY (V OUT = mvp-p) k M M M G LARGE-SIGNAL GAIN vs. FREQUENCY (V OUT = Vp-p) k M M M G TOC TOC6 TOC9 // 5

6 65V/µs, Wideband, High-Output-Current, Single- // Typical Operating Characteristics (continued) (V CC = +5V, = V, V EN = +5V, V OUT = V OUT+ - V OUT-, R L = Ω between OUT+ and OUT-, A V = +V/V for /, A V = +5V/V for, T A = +5 C, unless otherwise noted.) SMALL-SIGNAL GAIN vs. FREQUENCY (V OUT = mvp-p) C LOAD = 5pF C LOAD = 5pF k M M M G 5mV/div SMALL-SIGNAL PULSE RESPONSE TOC TOC SMALL-SIGNAL GAIN vs. FREQUENCY (V OUT = mvp-p) C LOAD = 5pF C LOAD = 5pF k M M M G 5mV/div SMALL-SIGNAL PULSE RESPONSE TOC TOC SMALL-SIGNAL GAIN vs. FREQUENCY (V OUT = mvp-p) C LOAD = 5pF C LOAD = 5pF k M M M G 5mV/div SMALL-SIGNAL PULSE RESPONSE TOC TOC5 mv/div mv/div 5mV/div (5ns/div) (5ns/div) (5ns/div) LARGE-SIGNAL PULSE RESPONSE LARGE-SIGNAL PULSE RESPONSE LARGE-SIGNAL PULSE RESPONSE 5mV/div TOC6 5mV/div TOC7 mv/div TOC8 V/div V/div V/div (5ns/div) (5ns/div) (5ns/div) 6

7 65V/µs, Wideband, High-Output-Current, Single- Typical Operating Characteristics (continued) (V CC = +5V, = V, V EN = +5V, V OUT = V OUT+ - V OUT-, R L = Ω between OUT+ and OUT-, A V = +V/V for /, A V = +5V/V for, T A = +5 C, unless otherwise noted.) SLEW RATE (V/µs) DIFFERENTIAL GAIN (%) DIFFERENTIAL PHASE ( ) DISTORTION (db) SLEW RATE vs. VOLTAGE 6 8 VOLTAGE (V) DIFFERENTIAL GAIN AND PHASE IRE IRE HARMONIC DISTORTION vs. FREQUENCY (V OUT = Vp-p) ND RD - M M M TOC9 TOC5 TOC DIFFERENTIAL GAIN (%) DIFFERENTIAL PHASE ( ) DISTORTION (db) DISTORTION (db) DIFFERENTIAL GAIN AND PHASE IRE IRE HARMONIC DISTORTION vs. FREQUENCY (V OUT = Vp-p) ND RD - M M M HARMONIC DISTORTION vs. VOLTAGE SWING (f C = 5MHz) ND RD VOLTAGE SWING (V) TOC TOC TOC6 DIFFERENTIAL GAIN (%) DIFFERENTIAL PHASE ( ) DISTORTION (db) DISTORTION (db) DIFFERENTIAL GAIN AND PHASE IRE IRE HARMONIC DISTORTION vs. FREQUENCY (V OUT = Vp-p) RD ND - M M M HARMONIC DISTORTION vs. VOLTAGE SWING (f C = 5MHz) RD ND VOLTAGE SWING (V) TOC TOC TOC7 // 7

8 65V/µs, Wideband, High-Output-Current, Single- // Typical Operating Characteristics (continued) (V CC = +5V, = V, V EN = +5V, V OUT = V OUT+ - V OUT-, R L = Ω between OUT+ and OUT-, A V = +V/V for /, A V = +5V/V for, T A = +5 C, unless otherwise noted.) DISTORTION (db) ISOLATION RESISTANCE (Ω) HARMONIC DISTORTION vs. VOLTAGE SWING (f C = 5MHz) ND RD VOLTAGE SWING (V) ISOLATION RESISTANCE vs. CAPACITIVE LOAD 6 8 CAPACITIVE LOAD (pf) TOC8 TOC VOLTAGE NOISE DENSITY (nv/ Hz) CURRENT IMPEDANCE (Ω) VOLTAGE NOISE DENSITY vs. FREQUENCY k k k M IMPEDANCE vs. FREQUENCY. k M M M G TOC9 TOC CURRENT NOISE DENSITY (pa/ Hz) DIFFERENTIAL VOLTAGE SWING (Vp-p) CURRENT NOISE DENSITY vs. FREQUENCY k k k M DIFFERENTIAL VOLTAGE SWING vs. RESISTIVE LOAD 8 6 R L (Ω) TOC TOC POWER-SUPPLY REJECTION vs. FREQUENCY TOC EN V EN =.8V TO V SHUTDOWN RESPONSE TIME TOC5 OFFSET VOLTAGE vs. TEMPERATURE TOC6 PSR (db) - VOS (mv) VOLTAGE V/div FREQUENCY (MHz) (5ns/div) TEMPERATURE ( C) 8

9 65V/µs, Wideband, High-Output-Current, Single- Typical Operating Characteristics (continued) (V CC = +5V, = V, V EN = +5V, V OUT = V OUT+ - V OUT-, R L = Ω between OUT+ and OUT-, A V = +V/V for /, A V = +5V/V for, T A = +5 C, unless otherwise noted.) QUIESCENT CURRENT (ma) 5 QUIESCENT CURRENT vs. TEMPERATURE EN = V CC EN = GND TEMPERATURE ( C) PIN NAME TOC7 BIAS CURRENT (µa) 9 6 BIAS CURRENT vs. TEMPERATURE TEMPERATURE ( C) FUNCTION TOC8 Pin Description //,, V CC Positive Power Supply. Bypass with a.µf capacitor to GND.,, 6, 6 N.C. No Connection. Not internally connected. Connect to GND for best AC performance. RG Gain-Set Resistor. Connect gain-setting resistor from RG to GND. 5 5 IN Amplifier Noninverting Input 7, 8,,,, 7, 8,,,, Negative Power-Supply Input. Bypass with a.µf capacitor to GND. 9 9 EN Active-High, TTL-Compatible, Enable Input. Connect to V CC for normal operation. Connect to GND for low-power operation. OUT+ Positive Polarity Output 5 5 OUT- Negative Polarity Output 6 6 GND Ground 9

10 65V/µs, Wideband, High-Output-Current, Single- // Detailed Description The // single-ended-to-differential converters are capable of transmitting highspeed signals such as T or xdsl over twisted-pair cable. Excellent gain and phase characteristics, along with low distortion, make these devices suitable for video and RF signal processing and transmission. These converters can be interfaced directly to some of Maxim s wireless products, such as the MAX5/ MAX5. The // offer wide small-signal bandwidths of MHz, MHz, and MHz, respectively. Internally trimmed resistors minimize gain errors to under % over the full output range. Other features include a high slew rate up to 65V/µs and high output current (ma), which allow these amplifiers to be used in numerous high-speed communications applications. Applications Information Grounding and Bypassing Use high-frequency design techniques when designing the PC board for the //: Use a multilayer board with one layer dedicated as the ground plane. Do not wire-wrap or use breadboards, due to high inductance. Avoid IC sockets, due to high parasitic capacitance and inductance. Bypass supplies with.µf. Use surface-mount capacitors to minimize lead inductance. Keep signal lines as short and straight as possible. Do not make 9 turns; round all corners. Do not cross signals if possible. Ensure that the ground plane is free from voids. Output Short-Circuit Protection Output short-circuit protection typically limits the current to ma when shorted to GND, thereby keeping the power dissipation under the absolute maximum power dissipating rating. However, when shorted to either supply, the short-circuit current can be significantly higher and cause damage to the device. Low-Power Enable Mode The // are disabled when EN goes low. This reduces supply current to only.ma and places the outputs into a higher impedance. R GAIN IN RG V CC Figure. Setting the Amplifier Gain R GAIN IN V CC RG OUT+ OUT- OUT- R ISO R ISO OUT+ A VCL = ( + R GAIN ) C LOAD C LOAD Figure. Using an Isolation Resistor for High Capacitive Loads

11 65V/µs, Wideband, High-Output-Current, Single- IN 5mV/div OUT V/div C L = 5pF Figure. Capacitive-Loaded Output Step Response Without Isolation Resistor Setting Gain The / are stable with minimum gain of +V/V and +5V/V, respectively. An external resistor, RGAIN, connected between RG and GND sets the gain of these devices. Calculate the gain as follows: Gain = ( + / RGAIN) RGAIN for the must be Ω. Driving Capacitive Loads The // are designed to drive capacitive loads. However, excessive capacitive loads may cause ringing or instability at the output as phase margin is reduced. Adding a small series isolation resistor at the output helps reduce the ringing but slightly increases gain error. IN 5mV/div OUT V/div C L = 5pF Figure. Capacitive-Loaded Output Step Response with Ω Isolation Resistor Twisted-Pair Line Driver The // are well-suited to drive twisted-pair cables. The AWG telephone wire widely used produces losses at the higher frequencies. Compensate for these losses by increasing the gain slightly. TRANSISTOR COUNT: 9 Chip Information //

12 65V/µs, Wideband, High-Output-Current, Single- // Package Information SOICN.EPS Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.