Features. FREQUENCY 900MHz 1950MHz 2450MHz NF (db) NF (db) IIP3 (dbm) GAIN (db)
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1 EVALUATION KIT AVAILABLE MAX// to.ghz, Low-Noise, General Description The MAX// miniature, low-cost, low-noise downconverter mixers are designed for lowvoltage operation and are ideal for use in portable communications equipment. Signals at the RF input port are mixed with signals at the local oscillator (LO) port using a double-balanced mixer. These downconverter mixers operate with RF input frequencies between and, and downconvert to IF output frequencies between 1 and. The MAX// operate from a single +.7V to +.V supply, allowing them to be powered directly from a 3-cell NiCd or a 1-cell Lithium battery. These devices offer a wide range of supply currents and input intercept (IIP3) levels to optimize system performance. Additionally, each device features a low-power shutdown mode in which it typically draws less than.1μa of supply current. Consult the Selector Guide for various combinations of IIP3 and supply current. The MAX// are manufactured on a high-frequency, low-noise, advanced silicon-germanium process and are offered in the space-saving -pin SOT3 package. Applications /9/.GHz ISM-Band Radios Personal Communications Systems (PCS) Cellular and Cordless Phones Wireless Local Loop IEEE-.11 and Wireless Data Features to.ghz Operation +.7V to +.V Single-Supply Operation Low Noise Figure:.3dB at 9 (MAX) High Input Third-Order Intercept Point (IIP3 at ) -.9dBm at.ma (MAX) +1.dBm at.7ma () +3.dBm at 1.mA () <.1μA Low-Power Shutdown Mode Ultra-Small Surface-Mount Packaging Ordering Information PART TEMP RANGE PIN- PACKAGE SOT TOP MARK MAXEUT-T - C to + C SOT3 AAAR EUT-T - C to + C SOT3 AAAS EUT-T - C to + C SOT3 AAAT Selector Guide PART I CC (ma) IIP3 (dbm) FREQUENCY 9 19 NF (db) GAIN (db) IIP3 (dbm) NF (db) GAIN (db) IIP3 (dbm) MAX NF (db) GAIN (db) Typical Operating Circuit appears at end of data sheet. 19-7; Rev ; /3
2 MAX// to.ghz, Low-Noise, Absolute Maximum Ratings V CC to GND...-.3V to +.V RFIN Input Power (Ω source)...+1dbm LO Input Power (Ω source)...+1dbm SHDN, IFOUT, RFIN to GND V to (V CC +.3V) LO to GND...(VCC - 1V) to (V CC +.3V) Continuous Power Dissipation (TA = +7 C) SOT3 (derate.7mw/ C above +7 C)...9mW Operating Temperature Range... - C to + C Junction Temperature...+1 C Storage Temperature Range... - C to +1 C Lead Temperature (soldering, 1s)...+3 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION! ESD SENSITIVE DEVICE DC Electrical Characteristics (V CC = +.7V to +.V, SHDN = +V, T A = T MIN to T MAX unless otherwise noted. Typical values are at V CC = +3V and T A = + C. Minimum and maximum values are guaranteed over temperature by design and characterization.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Supply Current I CC MAX Shutdown Supply Current I CC SHDN =.V. μa Shutdown Input Voltage High V IH. V Shutdown Input Voltage Low V IL. V Shutdown Input Bias Current I SHDN < SHDN < V CC. μa ma AC Electrical Characteristics (MAX/1/ EV Kit, V CC = SHDN = +3.V, T A = + C, unless otherwise noted. RFIN and IFOUT matched to Ω. P LO = -dbm, P RFIN = -dbm.) MAX PARAMETER CONDITIONS MIN TYP MAX UNITS RF Frequency Range (Notes 1, ) LO Frequency Range (Notes 1, ) IF Frequency Range (Notes 1, ) 1 Conversion Power Gain Gain Variation Over Temperature Input Third-Order Intercept Point (Note 3) Noise Figure (Single Sideband) =, =, = 7.3 = 9, = 97, = = 19, = 1, = 7 (Note 1) =, = 1, = 7. = 19, = 1, = 7, T A = T MIN to T MAX (Note 1) = 9, 91, = 97, = = 19, 191, = 1, = 7 -. =, 1, = 1, = -.9 = 9, = 97, = 7.3 = 19, =, = 7.3 =, = 1, = 11.7 LO Input VSWR Ω source impedance 1.:1 db 1.9. db LO Leakage at IFOUT Port = 1 - dbm dbm db Maxim Integrated
3 MAX// to.ghz, Low-Noise, AC Electrical Characteristics (continued) (MAX/1/ EV Kit, V CC = SHDN = +3.V, T A = + C, unless otherwise noted. RFIN and IFOUT matched to Ω. P LO = -dbm, P RFIN = -dbm.) PARAMETER CONDITIONS MIN TYP MAX UNITS LO Leakage at RFIN Port = 1 - dbm IF/ Spurious Response = 191, = 1, = 7 (Note ) -1 dbm RF Frequency Range (Notes 1, ) LO Frequency Range (Notes 1, ) IF Frequency Range (Notes 1, ) 1 Conversion Power Gain Gain Variation Over Temperature Input Third-Order Intercept Point (Note 3) Noise Figure (Single Sideband) =, =, = 11. = 9, = 97, = 7 1. = 19, = 1, = 7 (Note 1) =, = 1, = 7.7 = 19, = 1, = 7, T A = T MIN to T MAX (Note 1) = 9, 91, = 97, = = 19, 191, = 1, = 7 +. =, 1, = 1, = +1. = 9, = 97, = 7 7. = 19, =, = =, = 1, = 1.7 LO Input VSWR Ω source impedance 1.:1 db db LO Leakage at IFOUT Port = 1-3 dbm LO Leakage at RFIN Port = 1-7 dbm IF/ Spurious Response = 191, = 1, = 7 (Note ) - dbm RF Frequency Range (Notes 1, ) LO Frequency Range (Notes 1, ) IF Frequency Range (Notes 1, ) 1 Conversion Power Gain Gain Variation Over Temperature Input Third-Order Intercept Point (Note 3) Noise Figure (Single Sideband) =, =, = 13. = 9, = 97, = = 19, = 1, = 7 (Note 1) =, = 1, = 7.9 = 19, = 1, = 7, T A = T MIN to T MAX (Note 1) = 9, 91, = 97, = 7-1. = 19, 191, = 1, = 7 +. =, 1, = 1, = +3. = 9, = 97, = 7. = 19, =, = 7 1. =, = 1, = 13. dbm db db.1 3. db dbm db Maxim Integrated 3
4 MAX// to.ghz, Low-Noise, AC Electrical Characteristics (continued) (MAX/1/ EV Kit, V CC = SHDN = +3.V, T A = + C, unless otherwise noted. RFIN and IFOUT matched to Ω. P LO = -dbm, P RFIN = -dbm.) PARAMETER CONDITIONS MIN TYP MAX UNITS LO Input VSWR Ω source impedance 1.:1 LO Leakage at IFOUT Port = 1-3 dbm LO Leakage at RFIN Port = 1-7 dbm IF/ Spurious Response = 191, = 1, = 7 (Note ) -1 dbm Note 1: Guaranteed by design and characterization. Note : Operation outside of this specification is possible, but performance is not characterized and is not guaranteed. Note 3: Two input tones at -dbm per tone. Note : This spurious response is caused by a higher-order mixing product (x). Specified RF frequency is applied and IF output power is observed at the desired IF frequency (7). Typical Operating Characteristics (Typical Operating Circuit, V CC = SHDN = +3.V, P RFIN = -dbm, P LO = -dbm, T A = + C, unless otherwise noted.) SUPPLY CURRENT (ma) 7 MAX SUPPLY CURRENT vs. SUPPLY VOLTAGE SHDN = V CC T A = + C T A = + C T A = - C MAX/1/-1 SUPPLY CURRENT (ma) SUPPLY CURRENT vs. SUPPLY VOLTAGE SHDN = V CC T A = - C T A = + C T A = + C MAX/1/- SUPPLY CURRENT (ma) SUPPLY CURRENT vs. SUPPLY VOLTAGE 1 17 T A = + C SHDN = V CC T A = + C T A = - C 1 11 MAX/1/ SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Maxim Integrated
5 MAX// to.ghz, Low-Noise, Typical Operating Characteristics (continued) (Typical Operating Circuit, V CC = SHDN = +3.V, P RFIN = -dbm, P LO = -dbm, T A = + C, unless otherwise noted.) SHUTDOWN SUPPLY CURRENT (µa) CONVERSION POWER GAIN (db) CONVERSION POWER GAIN (db) MAX CONVERSION POWER GAIN vs. LO POWER MAX SHUTDOWN SUPPLY CURRENT vs. SUPPLY VOLTAGE SHDN = GND = 9 = 19 = MAX CONVERSION POWER GAIN vs. TEMPERATURE 1 = T A = + C SUPPLY VOLTAGE (V) = TEMPERATURE ( C) T A = + C T A = - C = 19 MAX/1/- MAX/1/-7 MAX/1/-1 SHUTDOWN SUPPLY CURRENT (µa) CONVERSION POWER GAIN (db) CONVERSION POWER GAIN (db) CONVERSION POWER GAIN vs. LO POWER SHUTDOWN SUPPLY CURRENT vs. SUPPLY VOLTAGE SHDN = GND = 9 T A = + C SUPPLY VOLTAGE (V) = = CONVERSION POWER GAIN vs. TEMPERATURE 1 = 19 = TEMPERATURE ( C) T A = + C T A = - C = 9 MAX/1/- MAX/1/- MAX/1/-11 SHUTDOWN SUPPLY CURRENT (µa) CONVERSION POWER GAIN (db) CONVERSION POWER GAIN (db) CONVERSION POWER GAIN vs. LO POWER SHUTDOWN SUPPLY CURRENT vs. SUPPLY VOLTAGE SHDN = GND = 9 T A = + C SUPPLY VOLTAGE (V) = 19 = CONVERSION POWER GAIN vs. TEMPERATURE TEMPERATURE ( C) T A = + C T A = - C = 9 = 19 = MAX/1/- MAX/1/-9 MAX/1/-1 Maxim Integrated
6 MAX// to.ghz, Low-Noise, Typical Operating Characteristics (continued) (Typical Operating Circuit, V CC = SHDN = +3.V, P RFIN = -dbm, P LO = -dbm, T A = + C, unless otherwise noted.) INPUT IP3 (dbm) NOISE FIGURE (db) REAL IMPEDANCE (Ω) MAX INPUT IP3 vs. LO POWER = 19, 191 = 1 = 7 P RFIN = -dbm PER TONE MAX NOISE FIGURE vs. LO POWER = = 19 = MAX RF PORT IMPEDANCE vs. RF FREQUENCY MAX/1/ IMAGINARY = 97 REAL - P LO = -dbm RF FREQUENCY () MAX/1/-13 MAX/1/ IMAGINARY IMPEDANCE (W) INPUT IP3 (dbm) NOISE FIGURE (db) REAL IMPEDANCE (Ω) INPUT IP3 vs. LO POWER = 19, 191 = 1 = 7 P RFIN = -dbm PER TONE NOISE FIGURE vs. LO POWER = = 19 = 9 RF PORT IMPEDANCE vs. RF FREQUENCY MAX/1/ IMAGINARY = 97 REAL - P LO = -dbm RF FREQUENCY () MAX/1/-1 MAX/1/ IMAGINARY IMPEDANCE (Ω) INPUT IP3 (dbm) NOISE FIGURE (db) REAL IMPEDANCE (Ω) INPUT IP3 vs. LO POWER = 19, 191 = 1 = 7 P RFIN = -dbm PER TONE NOISE FIGURE vs. LO POWER = = 19 = 9 RF PORT IMPEDANCE vs. RF FREQUENCY MAX/1/-1 3 = 97 P LO = -dbm IMAGINARY REAL RF FREQUENCY () MAX/1/-1 MAX/1/ IMAGINARY IMPEDANCE (Ω) Maxim Integrated
7 MAX// to.ghz, Low-Noise, Typical Operating Characteristics (continued) (Typical Operating Circuit, V CC = SHDN = +3.V, P RFIN = -dbm, P LO = -dbm, T A = + C, unless otherwise noted.) REAL IMPEDANCE (Ω) MAX IF PORT IMPEDANCE vs. IF FREQUENCY 1 MAX/1/- = 97 P LO = -dbm 1-1 IMAGINARY REAL IMAGINARY IMPEDANCE (Ω) REAL IMPEDANCE (Ω) IF PORT IMPEDANCE vs. IF FREQUENCY 1 MAX/1/-3 = 97 P LO = -dbm 1-1 IMAGINARY REAL IMAGINARY IMPEDANCE (Ω) REAL IMPEDANCE (Ω) IF PORT IMPEDANCE vs. IF FREQUENCY MAX/1/- = 97 7 P LO = -dbm IMAGINARY REAL IMAGINARY IMPEDANCE (Ω) RETURN LOSS (db) ISOLATION (db) IF FREQUENCY () MAX LO PORT RETURN LOSS FREQUENCY () MAX LO-to-IF AND LO-to-RF ISOLATION LO-to-RF ISOLATION LO-to-IF ISOLATION MAX/1/- MAX/1/- RETURN LOSS (db) ISOLATION (db) IF FREQUENCY () LO PORT RETURN LOSS FREQUENCY () LO-to-IF AND LO-to-RF ISOLATION 3 LO-to-IF ISOLATION LO-to-RF ISOLATION MAX/1/- MAX/1/-9 RETURN LOSS (db) ISOLATION (db) IF FREQUENCY () LO PORT RETURN LOSS FREQUENCY () LO-to-IF AND LO-to-RF ISOLATION LO-to-RF ISOLATION LO-to-IF ISOLATION MAX/1/-7 MAX/1/ LO FREQUENCY () 1 1 LO FREQUENCY () LO FREQUENCY () Maxim Integrated 7
8 MAX// to.ghz, Low-Noise, Typical Operating Characteristics (continued) (Typical Operating Circuit, V CC = SHDN = +3.V, P RFIN = -dbm, P LO = -dbm, T A = + C, unless otherwise noted.) MAX TURN-OFF/ON CHARACTERISTICS TURN-OFF/ON CHARACTERISTICS TURN-OFF/ON CHARACTERISTICS SHDN V/div MAX/1/-31 SHDN V/div MAX/1/-3 SHDN V/div MAX/1/-33 IFOUT mv/ div IFOUT mv/ div IFOUT mv/ div Z1 = 39pF Z1 = 39pF Z = 39pF ns/div ns/div ns/div Pin Configuration TOP VIEW LO GND 1 SHDN MAX V CC RFIN 3 IFOUT SOT3- Pin Description PIN NAME FUNCTION 1 LO Local-Oscillator Input. Apply a local-oscillator signal with an amplitude of -1dBm to (Ω source). AC-couple this pin to the oscillator with a DC-blocking capacitor. Nominal DC voltage is V CC -.V. GND Mixer Ground. Connect to the ground plane with a low-inductance connection. 3 RFIN IFOUT Radio Frequency Input. AC-couple to this pin with a DC-blocking capacitor. Nominal DC voltage is 1.V. See the Applications Information section for details on impedance matching. Intermediate Frequency Output. Open-collector output requires an inductor to V CC. AC-couple to this pin with a DC-blocking capacitor. See the Applications Information section for details on impedance matching. V CC Supply Voltage Input, +.7V to +.V. Bypass with a capacitor to the ground plane. Capacitor value depends upon desired operating frequency. SHDN Active-Low Shutdown. Drive low to disable all device functions and reduce the supply current to less than μa. For normal operation, drive high or connect to V CC. Maxim Integrated
9 MAX// to.ghz, Low-Noise, Detailed Description The MAX// are to.ghz, silicon-germanium, double-balanced downconverter mixers. They are designed to provide optimum linearity performance for a specified supply current. They consist of a double-balanced Gilbert-cell mixer with single-ended RF, LO, and IF port connections. An on-chip bias cell provides a low-power shutdown feature. Consult the Selector Guide for device features and comparison. Applications Information Local-Oscillator (LO) Input The LO input is a single-ended broadband port with a typical input VSWR of better than.:1 from to.ghz. The LO signal is mixed with the RF input signal, and the resulting downconverted output appears at IFOUT. AC-couple LO with a capacitor. Drive the LO port with a signal ranging from -1dBm to (Ω source). RF Input The RF input frequency range is to.ghz. The RF input requires an impedance-matching network as well as a DC-blocking capacitor that can be part of the matching network. Consult Tables 1 and, as well as the RF Port Impedance vs. RF Frequency graph in the Typical Operating Characteristics section for information on matching. Table 1. RFIN Port Impedance IF Output The IF output frequency range extends from 1 to. IFOUT is a high-impedance, open-collector output that requires an external inductor to V CC for proper biasing. For optimum performance, the IF port requires an impedance-matching network. The configuration and values for the matching network is dependent upon the frequency and desired output impedance. For assistance in choosing components for optimal performance, see Table 3 and Table as well as the IF Port Impedance vs. IF Frequency graph in the Typical Operating Characteristics section. Power-Supply and SHDN Bypassing Proper attention to voltage supply bypassing is essential for high-frequency RF circuit stability. Bypass V CC with a 1μF capacitor in parallel with a 1pF capacitor. Use separate vias to the ground plane for each of the bypass capacitors and minimize trace length to reduce inductance. Use separate vias to the ground plane for each ground pin. Use low-inductance ground connections. Decouple SHDN with a 1pF capacitor to ground to minimize noise on the internal bias cell. Use a series resistor (typically 1Ω) to reduce coupling of high-frequency signals into the SHDN pin. Layout Issues A well-designed PC board is an essential part of an RF circuit. For best performance, pay attention to powersupply issues as well as to the layout of the RFIN and IFOUT impedance-matching network. PART FREQUENCY 9 19 MAX 179-j3 -j179 3-j9 33-j73 9-j33 7-j1 3-j1 33-j -j3 7-j1 3-j1 9-j Table. RF Input Impedance-Matching Component Values MATCHING COMPONENTS Note: Z1, Z, and Z3 are found in the Typical Operating Circuit. FREQUENCY MAX Z1 nh 7pF 1.pF Short nh 7pF 1.pF Short nh 1.pF Short Short Z 7pF nh 7pF 7pF 7pF 1nH 7pF 7pF 7pF 7pF 7pF 7pF Z3 Open Open 1.nH 1.nH.pF Open 1.nH.nH.pF 1nH.nH 1.nH Maxim Integrated 9
10 MAX// to.ghz, Low-Noise, Table 3. IFOUT Port Impedance PART FREQUENCY 7 MAX 9-j37 3-j7 1-j j373 7-j 11-j37 7-j1 7-j99 17-j9 Table. IF Output Impedance-Matching Components MATCHING COMPONENT FREQUENCY 7 L1 39nH 33nH nh C 39pF 1pF 3pF R1 Ω Open Open Power-Supply Layout To minimize coupling between different sections of the IC, the ideal power-supply layout is a star configuration with a large decoupling capacitor at a central V CC node. The V CC traces branch out from this central node, each going to a separate V CC node on the PC board. At the end of each trace is a bypass capacitor that has low ESR at the RF frequency of operation. This arrangement provides local decoupling at the V CC pin. At high frequencies, any signal leaking out of one supply pin sees a relatively high impedance (formed by the V CC trace inductance) to the central V CC node, and an even higher impedance to any other supply pin, as well as a low impedance to ground through the bypass capacitor. Impedance-Matching Network Layout The RFIN and IFOUT impedance-matching networks are very sensitive to layout-related parasitics. To minimize parasitic inductance, keep all traces short and place components as close as possible to the chip. To minimize parasitic capacitance, use cutouts in the ground plane (and any other plane) below the matching network components. However, avoid cutouts that are larger than necessary since they act as aperture antennas. Typical Operating Circuit LO INPUT C1 1 LO GND MAX SHDN V CC L1 C3 SHUTDOWN CONTROL R1 C 1pF C 1µF V CC +.7V TO +.V RF INPUT Z 1 Z 3 Z 3 RFIN IFOUT C IF OUTPUT THE VALUES OF MATCHING COMPONENTS C, L1, R1, Z1, Z, AND Z3 DEPEND ON THE IF AND RF FREQUENCY AND DOWNCONVERTER. SEE TABLES AND. Maxim Integrated 1
11 MAX// to.ghz, Low-Noise, Package Information For the latest package outline information and land patterns (footprints), go to Note that a +, #, or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. Maxim Integrated 11
12 MAX// to.ghz, Low-Noise, Package Information (continued) For the latest package outline information and land patterns (footprints), go to Note that a +, #, or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. For pricing, delivery, and ordering information, please contact Maxim Direct at 1--9-, or visit Maxim Integrated s website at Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance. Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc. 3 Maxim Integrated Products, Inc. 1
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in SC7 Packages General Description The MAX6672/MAX6673 are low-current temperature sensors with a single-wire output. These temperature sensors convert the ambient temperature into a 1.4kHz PWM output,
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19-2205; Rev 0; 10/01 EVALUATION KIT AVAILABLE CDMA + LNA/Mixers General Description The LNA/mixer ICs are designed for CDMA/cdma2000 1x and applications. The are optimized for the Japanese 832MHz to 870MHz
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19-1248; Rev 1; 5/98 EVALUATION KIT AVAILABLE 10MHz to 1050MHz Integrated General Description The combines a low-noise oscillator with two output buffers in a low-cost, plastic surface-mount, ultra-small
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19-113; Rev 1; 8/3 EVLUTION KIT VILBLE DC-to-Microwave, +V Low-Noise mplifier General Description The is a low-noise amplifier for use from DC to microwave frequencies. Operating from a single +V supply,
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19-215; Rev 6; 9/6 EVALUATION KIT AVAILABLE RF Power Detectors in UCSP General Description The wideband (8MHz to 2GHz) power detectors are ideal for GSM/EDGE (MAX226), TDMA (MAX227), and CDMA (MAX225/MAX228)
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