2N60. Surface Mount N-Channel Power MOSFET. Maximum Ratings(T A =25 C Unless Otherwise Specified) Description:

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1 Surface Mount Nhannel Power MOSFT P b ead(pb)free escription: This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features: *, 6V,R S(ON) =5. * ow gate charge * ow rss * Fast switching * Improved dv/dt capability 1 T 2 3 SOUR RIN RIN URRNT 2 MPRS RIN SOUR VOT 6 VOT PK3/(TO251) PK/(TO252) TO22 TO22F Maximum Ratings(T =25 Unless Otherwise Specified) rainsource Voltage atesource Voltage valanche urrent (Note 1) ontinuous rain urrent Pulsed rain urrent, TP imited by TJMX (Note 1) valanche nergy, Single Pulsed (Note 2) valanche nergy, Repetitive, imited by TJMX Rating Symbol Value Unit V SS I R 6 V SS 3 Peak iode Recovery dv/dt (Note 3) dv/dt 4.5 Total Power issipation P(T=25 ) F(T=25 ) I/(T =25 ) P(erate above 25 ) F(erate above 25 ) I/(erate above 25 ) Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds I I M S R P T V mj mj V/ns W Operating Junction and Storage Temperature Range TJ,Tstg 55~+15 * rain current limited by maximum junction temperature. 1/9 12pr211

2 lectrical haracteristics (T = 25 Unless otherwise noted) Static haracteristic Symbol Min Typ Max Unit rainsource reakdown S =,I =25μ V SS 6 ate Threshold S =V S,I =25μ V S(Th) 4. V atesource eakage current Forward@VS=3V,VS=V ReVerse@VS=3V,VS=V rainsourceeakage urrent(tj=25 S =6V,V S = I SS I SS 1 n 1 rainsourceeakage urrent(tj=125 S =48V,V S = 1 1 μ rainsource OnState S =1V,I =1. RS(on) Ω Forward S =5V,I =1.(Note 4) gfs 2.25 S reakdown Voltage Temperature oefficient I =25 µ, Referenced to 25 VSS / T J.4 V/ ynamic Input S =V,V S =25V,f=1.Mz iss Output S =V,V S =25V,f=1.Mz oss 3 45 pf Reverse Transfer S =V,V S =25V,f=1.Mz rss Switching Turnon elay Time V =3V,I =,R =25Ω(Note 4, 5) t d(on) 13 3 Turnon Rise Time V =3V,I =,R =25Ω(Note 4, 5) Turnoff elay Time V =3V,I =,R =25Ω(Note 4, 5) t r t d(off) ns Turnoff Fall Time V =3V,I =,R =25Ω(Note 4, 5) t f Total ate harge V S =48V,I =7.5,V S =1V(Note 4, 5) atesource harge V S =48V,I =7.5,V S =1V(Note 4, 5) aterain hange V S =48V,I =7.5,V S =1V(Note 4, 5) Q g Q gs Q gd 3.3 n 2/9 12pr211

3 lectrical haracteristics (T = 25 Unless otherwise noted) haracteristic Symbol Min Typ Max Unit Sourcerain iode haracteristics rainsource iode Forward S =V,I S =7.5 V S 1.4 V Maximum ontinuous rainsource iode Forward urrent I S Maximum Pulsed rainsource iode Forward urrent I SM 8. Reverse Recovery Time@V S =V,I S =7.5,dlF/dt=1/µs (Note 4) T rr 23 ns Reverse Recovery S =V,I S =7.5,dlF/dt=1/µs(Note 4) Thermal ata Q rr 1. µ haracteristic Symbol Value Unit Junctiontombient Junctiontoase P F I P F I Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. = 3m, IS = 2.58, V = 123V, R = 25 Ω, Starting TJ = IS 2.4, di/dt 2/μs, V VSS, Starting TJ = Pulse Test: Pulse width 3μs, uty cycle 2% 5. ssentially independent of operating temperature R J R J /W /W Ordering Information Order Number Package Pin ssignment Packing P TO22 S Tube F TO22F S Tube I PK3/TO251 S Tube PK/TO252 S Tube 3/9 12pr211

4 Test ircuits nd Waveforms.U.T. + VS + R river V V S Same Type as.u.t. * dv/dt controlled by R * IS controlled by pulse period *.U.T.evice Under Test Fig. 1 Peak iode Recovery dv/dt Test ircuit V S (river) P.W. Period = P. W. Period V S = 1V I FM, ody iode Forward urrent I S (.U.T.) di/dt I RM ody iode Reverse urrent ody iode Recovery dv/dt VS (.U.T.) V ody iode Forward Voltage rop Fig. 1 Peak iode Recovery dv/dt Waveforms 4/9 12pr211

5 Test ircuits nd Waveforms(cont.) V S R V S 9% V S V R 1V.U.T. V S 1% t(on) Pulse Width 1μs t R t (OFF) t F uty Factor.1% Fig. 2 Switching Test ircuit Fig. 2 Switching Waveforms 12V.2μF 5kΩ.3 μf Same Type as.u.t. 1V Q V S Q S Q V S UT 3m V harge Fig. 3 ate harge Test ircuit Fig. 3 ate harge Waveform V S V SS R V 1V.U.T. tp I S tp Time Fig. 4 Unclamped Inductive Switching Test ircuit Fig. 4 Unclamped Inductive Switching Waveforms 5/9 12pr211

6 Typical haracteristics OnRegion haracteristics Transfer haracteristics rain urrent, I () 1 1 V S Top: 15.V 1.V 8.V 7.V 6.5V 6.V ottorm : 5.5V rain urrent, I () V S =5V 25 μs Pulse Test μs Pulse Test T = rainsource Voltage, VS (V) atesource Voltage, V S (V) rainsource OnResistance, RS(ON) ( Ω) OnResistance Variation vs. rain urrent and ate Voltage TJ= V S =1V V S =2V rain urrent, I () Reverse rain urrent, IR () ody iode Forward Voltage Variationvs. Source urrent and Temperature V S =V 25μs Pulse Test Sourcerain Voltage, V S (V) 1.6 apacitance vs. rainsource Voltage ate harge vs. ate harge Voltage apacitance (pf) V S =V f = 1Mz 1 1 oss rss iss 1 1 rainsource Voltage, V iss= S + ( S =shorted) oss= S+ rss = (V) atesource Voltage, V S (V) VS=12V VS=3V VS=48V I = Total ate harge, Q (n) 6/9 12pr211

7 Typical haracteristics reakdown Voltage vs. Temperature OnResistance vs. Temperature rainsource reakdown Voltage, V SS (Normalized) V S=1V I = Junction Temperature, T J ( ) rainsource OnResistance, R S(ON) (Normalized) V S =1V I = Junction Temperature, T J ( ) Max. Safe Operating rea Max. rain urrent vs. ase Temperature rain urrent, I () Operation in This rea is imited by R S(on) T=25 T J =125 Single Pulse 1 1 1ms 1m s s 1 s rainsource Voltage, V S (V) 1 3 rain urrent, I () ase Temperature, T ( ) Thermal Response Thermal Response, J (t) 1 1 = PM Single pulse 1 5 J (t) = 2.78 /W Max. uty Factor, =t1/t2 T JMT =P M J (t) t1 Square Wave Pulse uration, t1 (s) t2 7/9 12pr211

8 TO22 Outline imensions Unit:mm F Ø im F 1 Φ TO22 Min Max TYP TO22F Outline imensions Unit:mm Symbol TO22F imension 1 3.3± ± ± MX imension 2 2.7±.75 3.±.2 4.5± MX 15.75±.3 15±.3 8/9 12pr211

9 TO251 Outline imensions unit:mm N M J K im J K M TO251 M in M ax N.9 1. m it t er 2. ase 3. ollect or TO252 Outline imensions unit:mm M J K TO252 im Min Max J K M /9 12pr211