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1 Is Now Part of To learn more about ON emiconductor, please visit our website at ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FMC4435BZ P-Channel Power Trench MOFET -30 V, -8 A, 20 mω Features Max r (on) = 20 mω at V G = - V, I = -8.5 A Max r (on) = 37 mω at V G = -4.5 V, I = -6.3 A Extended V G range (-25 V) for battery applications High performance trench technology for extremely low r (on) High power and current handling capability HBM E protection level >7 kv typical (Note 4) 0% UIL Tested Termination is Lead-free and RoH Compliant Top Bottom General escription November 205 This P-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications High side in C - C Buck Converters Notebook battery power management Load switch in Notebook Pin 5 4 G 6 3 G MLP 3.3x3.3 MOFET Maximum Ratings T A = 25 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage -30 V V G Gate to ource Voltage ±25 V I -Continuous T A = 25 C (Note a) -8.5 A rain Current -Continuous T C = 25 C -8 -Pulsed -50 E A ingle Pulse Avalanche Energy (Note 3) 32 mj Power issipation T P C = 25 C 3 Power issipation T A = 25 C (Note a) 2.3 W T J, T TG Operating and torage Junction Temperature Range -55 to +50 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case 4 R θja Thermal Resistance, Junction to Ambient (Note a) 53 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FMC4435BZ FMC4435BZ MLP 3.3X mm 3000 units 20 Fairchild emiconductor Corporation

3 Electrical Characteristics T J = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = -250 μa, V G = 0 V -30 V ΔBV Breakdown Voltage Temperature I ΔT J Coefficient = -250 μa, referenced to 25 C 2 mv/ C V = -24 V, - I Zero Gate Voltage rain Current μa V G = 0 V, T J = 25 C -0 I G Gate to ource Leakage Current V G = ±25 V, V = 0 V ± μa On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = -250 μa V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient I = -250 μa, referenced to 25 C -5 mv/ C V G = - V, I = -8.5 A 4 20 V r (on) tatic rain to ource On Resistance G = -4.5 V, I = -6.3 A 2 37 mω V G = - V, I = -8.5 A, T J = 25 C g F Forward Transconductance V = -5 V, I = -8.5 A 25 ynamic Characteristics C iss Input Capacitance pf V = -5 V, V G = 0 V, C oss Output Capacitance 3 4 pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance f = MHz 4 Ω witching Characteristics t d(on) Turn-On elay Time 20 ns t r Rise Time V = -5 V, I = -8.5 A, 9 8 ns t d(off) Turn-Off elay Time V G = - V, R GEN = 6 Ω ns t f Fall Time 9 34 ns Q g Total Gate Charge V G = 0 V to - V nc Q g Total Gate Charge V G = 0 V to -4.5 V V = -5 V, nc Q gs Gate to ource Charge I = -8.5 A 4.3 nc Q gd Gate to rain Miller Charge nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = 0 V, I = -8.5A (Note 2) V V G = 0 V, I = -.9 A (Note 2) t rr Reverse Recovery Time ns I F = -8.5 A, di/dt = 0 A/μs Q rr Reverse Recovery Charge 2 20 nc NOTE:. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 53 C/W when mounted on a in 2 pad of 2 oz copper b.25 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, uty cycle < 2.0 %. 3. tarting T J = 25 o C; P-ch: L = mh, I A = -8A, V = -27V, V G = -V. 4. The diode connected between the gate and source servers only as protection against E. No gate overvoltage rating is implied. 20 Fairchild emiconductor Corporation 2

4 Typical Characteristics T J = 25 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE V G = -3.5V PULE URATION = 80μs UTY CYCLE = 0.5%MAX V, RAIN TO OURCE VOLTAGE (V) Figure I = -8.5A V G = -V V G = -5V V G = -V V G = -4.5V V G = - 4V NORMALIZE RAIN TO OURCE ON-REITANCE.0 V G = -V I, RAIN CURRENT(A) On-Region Characteristics Figure 2. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V G = -3.5V T J = 25 o C PULE URATION = 80μs UTY CYCLE = 0.5%MAX V G = -4V V G = -4.5V V G = -5V PULE URATION = 80μs UTY CYCLE = 0.5%MAX I = -8.5A T J = 25 o C V G, GATE TO OURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to ource Voltage -I, RAIN CURRENT (A) PULE URATION = 80μs UTY CYCLE = 0.5%MAX V = -5V T J = 50 o C T J = 25 o C T J = -55 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics -I, REVERE RAIN CURRENT (A) V G = 0V T J = 50 o C T J = 25 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 20 Fairchild emiconductor Corporation 3

5 Typical Characteristics T J = 25 C unless otherwise noted -IA, AVALANCHE CURRENT(A) -VG, GATE TO OURCE VOLTAGE(V) I = -8.5A Q g, GATE CHARGE(nC) Figure 7. V = -V V = -20V V = -5V V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 25 o C T J = 25 o C t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -I, RAIN CURRENT (A) f = MHz V G = 0V V G = -V V G = -4.5V Limited by Package C iss C oss C rss R θjc = 4 o C/W T C, Ambient TEMPERATURE ( o C) 30 Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature 0-4 V = 0V -I, RAIN CURRENT (A) 0us ms THI AREA I ms LIMITE BY r (on) 0ms INGLE PULE s 0. T J = MAX RATE s R θja = 25 o C/W C T A = 25 o C V, RAIN TO OURCE VOLTAGE (V) -Ig, GATE LEAKAGE CURRENT(A) T J = 25 o C T J = 25 o C V G, GATE TO OURCE VOLTAGE(V) Figure. Forward Bias afe Operating Area Figure 2. Igss vs Vgss 20 Fairchild emiconductor Corporation 4

6 Typical Characteristics T J = 25 C unless otherwise noted P (PK), PEAK TRANIENT POWER (W) r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE t, PULE WITH (sec) 2 Figure 3. V G = -V UTY CYCLE-ECENING ORER = INGLE PULE R θja = 25 o C/W T A = 25 o C ingle Pulse Maximum Power issipation 0. t t 2 NOTE: Z θja (t) = r(t) x R θja INGLE PULE R θja = 25 C/W Peak T J = P M x Z θja (t) + T A 0.0 uty Cycle, = t / t t, RECTANGULAR PULE URATION (sec) P M Figure 4. Transient Thermal Response Curve 20 Fairchild emiconductor Corporation 5

7 imensional Outline and Pad Layout 20 Fairchild emiconductor Corporation 6

8 imensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. rawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild emiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild emiconductor s online packaging area for the most recent package drawings: 20 Fairchild emiconductor Corporation 7

9 TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AttitudeEngine Awinda AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FastvCore FETBench FP F-PF FRFET Global Power Resource M GreenBridge Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR Marking mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax MotionGrid MTi MTx MVN mwaver OptoHiT OPTOLOGIC OPTOPLANAR Power upply Webesigner PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure *Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. tm aving our world, mw/w/kw at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X Xsens 仙童 ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. TO OBTAIN THE LATET, MOT UP-TO-ATE ATAHEET AN PROUCT INFORMATION, VIIT OUR WEBITE AT FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. AUTHORIZE UE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: () automotive or other transportation, (2) military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild s Worldwide Terms and Conditions of ale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handling and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. 20 Fairchild emiconductor Corporation 8 Rev. I77

10 ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor 952 E. 32nd Pkwy, Aurora, Colorado 800 UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com emiconductor Components Industries, LLC N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative

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