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1 Is Now Part of To learn more about ON emiconductor, please visit our website at ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 F4435BZ P-Channel PowerTrench MOFET -V, -8.8A, 0m Features Max r (on) = 0m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -4.5V, I = -6.7A Extended V G range (-5V) for battery applications HBM E protection level of ±3.8KV typical (note 3) High performance trench technology for extremely low r (on) High power and current handling capability Termination is Lead-free and RoH compliant April 009 General escription This P-Channel MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. F4435BZ P-Channel PowerTrench MOFET G Pin G 7 8 O-8 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage - V V G Gate to ource Voltage ±5 V rain Current -Continuous T I A = 5 C (Note a) Pulsed -50 A Power issipation T A = 5 C (Note a).5 P Power issipation T A = 5 C (Note b).0 W E A ingle Pulse Avalanche Energy (Note 4) 4 mj T J, T TG Operating and torage Junction Temperature Range -55 to +50 C Thermal Characteristics R JC Thermal Resistance, Junction to Case 5 R JA Thermal Resistance, Junction to Ambient (Note a) 50 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity F4435BZ F4435BZ O-8 3 mm 500units 009 Fairchild emiconductor Corporation F4435BZ Rev.C

3 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = -50 A, V G = 0V - V BV Breakdown Voltage Temperature T J Coefficient I = -50 A, referenced to 5 C - mv/ C I Zero Gate Voltage rain Current V = -4V, V G = 0V A I G Gate to ource Leakage Current V G = ±5V, V = 0V ± A On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = -50 A V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = -50 A, referenced to 5 C 6 mv/ C V G = -V, I = -8.8A 6 0 r (on) tatic rain to ource On Resistance V G = -4.5V, I = -6.7A 6 35 m V G = -V, I = -8.8A, T J = 5 C 8 g F Forward Transconductance V = -5V, I = -8.8A 4 ynamic Characteristics C iss Input Capacitance pf V = -5V, V G = 0V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 345 pf R g Gate Resistance f = MHz 4.5 F4435BZ P-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 0 ns V = -5V, I = -8.8A, t r Rise Time 6 ns V G = -V, R GEN = 6 t d(off) Turn-Off elay Time 48 ns t f Fall Time ns Q g Total Gate Charge V G = 0V to -V 8 40 nc V = -5V, Q g Total Gate Charge V G = 0V to -5V 6 3 nc I = -8.8A Q gs Gate to ource Charge 5. nc Q gd Gate to rain Miller Charge 7.4 nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = 0V, I = -8.8A (Note ) V t rr Reverse Recovery Time 9 44 ns I F = -8.8A, di/dt = 0A/ s Q rr Reverse Recovery Charge 3 35 nc NOTE:. R JA is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 50 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 0 s, uty cycle <.0%. 3. The diode connected between the gate and source serves only as protection against E. No gate overvoltage rating is implied. 4. tarting T J = 5 C, L = mh, I A = -7A, V = -V, V G = -V 009 Fairchild emiconductor Corporation F4435BZ Rev.C

4 Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE PULE URATION = 80 s UTY CYCLE = 0.5%MAX Figure V G = -V V G = -5V V G = -4.5V V G = -4V V G = -3.5V -V, RAIN TO OURCE VOLTAGE (V) I = -8.8A V G = -V NORMALIZE RAIN TO OURCE ON-REITANCE I, RAIN CURRENT(A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (m ) V G = -3.5V V G = -4V V G = -V I = -8.8A PULE URATION = 80 s UTY CYCLE = 0.5%MAX V G = -4.5V V G = -5V PULE URATION = 80 s UTY CYCLE = 0.5%MAX V G, GATE TO OURCE VOLTAGE (V) F4435BZ P-Channel PowerTrench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to ource Voltage -I, RAIN CURRENT (A) PULE URATION = 80 s UTY CYCLE = 0.5%MAX V = -5V T J = 50 o C T J =-55 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics -I, REVERE RAIN CURRENT (A) V G = 0V T J = 50 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 009 Fairchild emiconductor Corporation F4435BZ Rev.C 3

5 Typical Characteristics T J = 5 C unless otherwise noted -VG, GATE TO OURCE VOLTAGE(V) -IA, AVALANCHE CURRENT(A) I = -8.8A Figure 7. 0 V = -5V V = -V Q g, GATE CHARGE(nC) V = -0V f = MHz V G = 0V V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -Ig, GATE LEAKAGE CURRENT(A) V = 0V C iss C oss C rss V G, GATE TO OURCE VOLTAGE(V) F4435BZ P-Channel PowerTrench MOFET Figure 9. Unclamped Inductive witching Capability Figure. Gate Leakage Current vs Gate to ource Voltage 0 -I, RAIN CURRENT (A) 8 V G = -V 6 V G = -4.5V 4 R JA = 50 o C/W I, RAIN CURRENT (A) 0. THI AREA I LIMITE BY r (on) INGLE PULE T J = MAX RATE R JA = 5 o C/W T A =5 o C us ms ms 0ms s s C 80 T A, AMBIENT TEMPERATURE ( o C) -V, RAIN to OURCE VOLTAGE (V) Figure. Maximum Continuous rain Current vs Ambient Temperature Figure. Forward Bias afe Operating Area 009 Fairchild emiconductor Corporation F4435BZ Rev.C 4

6 Typical Characteristics T J = 5 C unless otherwise noted P (PK), PEAK TRANIENT POWER (W) NORMALIZE THERMAL IMPEANCE, Z JA 00 0 V G = - V t, PULE WITH (s) Figure 3. ingle Pulse Maximum Power issipation UTY CYCLE-ECENING ORER = INGLE PULE R JA = 5 o C/W T A = 5 o C 0.0 INGLE PULE t t R JA = 5 o NOTE: C/W UTY FACTOR: = t /t PEAK T J = P M x Z JA x R JA + T A t, RECTANGULAR PULE URATION (sec) P M F4435BZ P-Channel PowerTrench MOFET Figure 4. Transient Thermal Response Curve 009 Fairchild emiconductor Corporation F4435BZ Rev.C 5

7 tm tm tm TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-PM Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EcoPARK EfficentMax EZWITCH * * Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FlashWriter * FP F-PF FRFET Global Power Resource M Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Millerrive MotionMax Motion-PM OPTOLOGIC OPTOPLANAR PP PM Power-PM PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw /W /kw at a time martmax MART TART PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault etect TRUECURRENT * eres UHC Ultra FRFET UniFET VCX VisualMax X F4435BZ P-Channel PowerTrench MOFET *Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete 009 Fairchild emiconductor Corporation F4435BZ Rev.C Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I40

8 ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor 95 E. 3nd Pkwy, Aurora, Colorado 800 UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com emiconductor Components Industries, LLC N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative

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