FDH15N50 / FDP15N50 / FDB15N50 N-Channel UniFET TM MOSFET

Transcription

1 FH15N / FP15N / FB15N N-Channel UniFET TM MOFET V, 15 A, 38 mω Features Low gate charge Q g results in simple drive requirement ( Typ. 33 nc) Improved ate, avalanche and high reapplied dv/dt ruggedness Reduced R (on) ( 33mΩ ( V = V, I = 7.5 A) Reduced Miller capacitance and low Input capacitance ( Typ. C rss = 16 pf) Improved switching speed with low EMI 175 o C rated junction temperature Applications Lighting Uninterruptible Power upply AC-C Power upply Absolute Maximum Ratings T C = 25 o C unless otherwise noted escription UniFET TM MOFET is Fairchild emiconductor s high voltage MOFET family based on planar stripe and MO technology. This MOFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FP) TV power, ATX and electronic lamp ballasts. ymbol Parameter Ratings Unit V rain to ource Voltage V V ate to ource Voltage ±3 V I TO-247 rain Current Continuous (T C = 25 o C, V = V) TO A Continuous (T C = o C, V = V) 11 A Pulsed 1 6 A P Power dissipation 3 W erate above 25 o C 2 W/ o C T J, T T Operating and torage Temperature -55 to 175 o C oldering Temperature for seconds 3 (1.6mm from case) o C TO-263 April 213 FH15N / FP15N / FB15N N-Channel UniFET TM MOFET Thermal Characteristics R θjc Thermal Resistance Junction to Case. o C/W R θja Thermal Resistance Junction to Ambient (TO-247) 4 o C/W R θja Thermal Resistance Junction to Ambient (TO-22, TO-263) 62 o C/W 23 Fairchild emiconductor Corporation FH15N / FP15N / FB15N Rev. C

2 Package Marking and Ordering Information evice Marking evice Package Reel ize Tape Width Quantity FH15N FH15N TO-247 Tube - 3 FP15N FP15N TO-22 Tube - FB15N FB15N TO mm 24mm 8 Electrical Characteristics T J = 25 C (unless otherwise noted) ymbol Parameter Test Conditions Min Typ Max Unit tatics B V rain to ource Breakdown Voltage I = 2µA, V = V - - V B V / T J Breakdown Voltage Temp. Coefficient Reference to 25 o C, I = 1mA V/ C r (ON) rain to ource On-Resistance V = V, I = 7.5A Ω V (th) ate Threshold Voltage V = V, I = 2µA V I Zero ate Voltage rain Current V = V T C = 25 o C V = V T C = 1 o C µa I ate to ource Leakage Current V = ±3V - - ± na ynamics g fs Forward Transconductance V = V, I = 7.5A - - Q g(tot) Total ate Charge at V V = V, nc Q gs ate to ource ate Charge V = 4V, nc Q gd ate to rain Miller Charge I = 15A nc t d(on) Turn-On elay Time V = 2V, ns t r Rise Time I = 15A, ns t d(off) Turn-Off elay Time R = 6.2Ω, ns t f Fall Time R = 17Ω ns C I Input Capacitance pf V = 25V, V = V, C O Output Capacitance pf f = 1MHz C R Reverse Transfer Capacitance pf Avalanche Characteristics E A ingle Pulse Avalanche Energy mj I AR Avalanche Current A rain-ource iode Characteristics Continuous ource Current I (Body iode) Pulsed ource Current 1 I M (Body iode) Notes: 1: Repetitive rating; pulse width limited by maximum junction temperature 2: tarting T J = 25 C, L = 7.mH, I A = 15A MOFET symbol showing the integral reverse p-n junction diode A A V ource to rain iode Voltage I = 15A V t rr Reverse Recovery Time I = 15A, di /dt = A/µs ns Q RR Reverse Recovered Charge I = 15A, di /dt = A/µs µc FH15N / FP15N / FB15N N-Channel UniFET TM MOFET 23 Fairchild emiconductor Corporation FH15N / FP15N / FB15N Rev. C

3 Typical Characteristics I, RAIN TO OURCE CURRENT (A) I, RAIN CURRENT (A) C, CAPACITANCE (pf) T J = 25 o C V ECENIN V 6.5V 6V 5.5V 5V 4.5V PULE URATION = 8µs UTY CYCLE =.5% MAX 1 1 V, RAIN TO OURCE VOLTAE (V) Figure 1. Output Characteristics PULE URATION = 8µs UTY CYCLE =.5% MAX V = V TJ = 175 o C V, ATE TO OURCE VOLTAE (V) TJ = 25 o C Figure 3. Transfer Characteristics C I C O C R V = V, f = 1MHz 1 V, RAIN TO OURCE VOLTAE (V) Figure 5. Capacitance vs rain To ource Voltage I, RAIN TO OURCE CURRENT (A) NORMALIZE ON REITANCE V, ATE TO OURCE VOLTAE (V) T J = 175 o C V ECENIN V 6V 5.5V 5V 4.5V 4V PULE URATION = 8µs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAE (V) Figure 2. Output Characteristics PULE URATION = 8µs UTY CYCLE =.5% MAX V = V, I = 7.5A TJ, JUNCTION TEMPERATURE ( o C) Figure 4. Normalized rain To ource On Resistance vs Junction Temperature I = 15A 2V V 4V Qg, ATE CHARE (nc) Figure 6. ate Charge Waveforms For Constant ate Current FH15N / FP15N / FB15N N-Channel UniFET TM MOFET 23 Fairchild emiconductor Corporation FH15N / FP15N / FB15N Rev. C

4 Typical Characteristics I, OURCE TO RAIN CURRENT (A) T J = 175 o C T J = 25 o C V, OURCE TO RAIN VOLTAE (V) Figure 7. Body iode Forward Voltage vs Body iode Current I, RAIN CURRENT (A) T C, CAE TEMPERATURE ( o C) Figure 9. Maximum rain Current vs Case Temperature I, RAIN CURRENT (A) I A, AVALANCHE CURRENT (A) 1. OPERATION IN THI AREA LIMITE BY R (ON).1 1 V, RAIN TO OURCE VOLTAE (V) T C = 25 o C Figure 8. Maximum afe Operating Area If R = t AV = (L)(I A )/(1.3*RATE BV - V ) If R t AV = (L/R)ln[(I A *R)/(1.3*RATE BV - V ) +1] TARTIN T J = 1 o C TARTIN T J = 25 o C µs 1ms ms t AV, TIME IN AVALANCHE (ms) Figure. Unclamped Inductive witching Capability C FH15N / FP15N / FB15N N-Channel UniFET TM MOFET Z θjc, NORMALIZE THERMAL REPONE UTY FACTOR, = t 1 / t 2 PEAK T J = (P X Z θjc X R θjc ) + T C.1 INLE PULE P t 1 t 2 t 1, RECTANULAR PULE URATION (s) Figure 11. Normalized Transient Thermal Impedance, Junction to Case 23 Fairchild emiconductor Corporation FH15N / FP15N / FB15N Rev. C

5 Test Circuits and Waveforms V L VARY t P TO OBTAIN + REQUIRE PEAK I A R V V - UT t P V I A.1Ω Figure 12. Unclamped Energy Test Circuit V R L V + V - UT I g(ref) Figure 14. ate Charge Test Circuit BV t P V I A V t AV Figure 13. Unclamped Energy Waveforms V Q g(tot) V V = V V V = 1V Q g(th) Q gs Q gd I g(ref) Figure 15. ate Charge Waveforms FH15N / FP15N / FB15N N-Channel UniFET TM MOFET V t ON t OFF t d(on) t d(off) R L t r t f V 9% 9% V + V - % % R UT 9% V V % % PULE WITH % Figure 16. witching Time Test Circuit Figure 17. witching Time Waveform 23 Fairchild emiconductor Corporation FH15N / FP15N / FB15N Rev. C

6 TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FP F-PF FRFET lobal Power Resource M reen Bridge reen FP reen FP e-eries max TO IntelliMAX IOPLANAR Marking mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax mwaver OptoHiT OPTOLOIC OPTOPLANAR *Trademarks of ystem eneral Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIHT TO MAKE CHANE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIIN OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIHT, NOR THE RIHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. tm PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, 1mW/W/kW at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. FH15N / FP15N / FB15N N-Channel UniFET TM MOFET ANTI-COUNTERFEITIN POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I64 23 Fairchild emiconductor Corporation FH15N / FP15N / FB15N Rev. C