FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m

Transcription

1 FM8 N-Channel Power Trench MOFET V, 9A,.m Features Max r (on) =.m at V G = V, I = 5A Max r (on) = 3.m at V G =.5V, I =.7A Advanced Package and ilicon combination for low r (on) ML robust package design % UIL tested RoH Compliant Top Bottom General escription May 9 This N-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application C - C Conversion Pin 5 G tm FM8 N-Channel Power Trench MOFET G Power 5 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage V V G Gate to ource Voltage ± V Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C 9 I -Continuous (ilicon limited) T C = 5 C 7 -Continuous T A = 5 C (Note a) 5 A -Pulsed E A ingle Pulse Avalanche Energy (Note 3) 8 mj Power issipation T P C = 5 C Power issipation T A = 5 C (Note a).5 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C R JC Thermal Resistance, Junction to Case. R JA Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM8 FM8 Power 5 3 mm 3 units FM8 Rev.C

2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 A, V G = V V BV Breakdown Voltage Temperature T J Coefficient I = 5 A, referenced to 5 C 3 mv/ C I Zero Gate Voltage rain Current V G = V, V = 3V, A I G Gate to ource Leakage Current V G = ±V, V = V ± na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 A V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = 5 A, referenced to 5 C -7.5 mv/ C V G = V, I = 5A.. r (on) tatic rain to ource On Resistance V G =.5V, I =.7A. 3. m V G = V, I = 5A, T J = 5 C. 3.3 g F Forward Transconductance V = 5V, I = 5A 37 ynamic Characteristics C iss Input Capacitance pf V = V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 7 5 pf R g Gate Resistance f = MHz. FM8 N-Channel Power Trench MOFET witching Characteristics t d(on) Turn-On elay Time 9 35 ns t r Rise Time V = V, I = 5A, 9 9 ns t d(off) Turn-Off elay Time V G = V, R GEN = 8 78 ns t f Fall Time 7 ns Q g Total Gate Charge V G = V to V 78 nc Q g Total Gate Charge V G = V to.5v V = V, 3 5 nc Q gs Gate to ource Charge I = 5A 5 nc Q gd Gate to rain Miller Charge nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = V, I = 5A (Note ).8.3 V G = V, I =.A (Note ).7. V t rr Reverse Recovery Time ns I F = 5A, di/dt = A/ s Q rr Reverse Recovery Charge nc NOTE:. R JA is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 s, uty cycle <.%. 3. tarting T J = 5 C, L = 3mH, I A = A, V = V, V G = V FM8 Rev.C

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 8 3 Figure I = 5A V G = V V G = V V G =.5V V G = V V G = 3.5V PULE URATION = 8 s UTY CYCLE =.5%MAX V G = 3V V, RAIN TO OURCE VOLTAGE (V) NORMALIZE RAIN TO OURCE ON-REITANCE.5 V G =V 8 I, RAIN CURRENT(A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (m ) V G = 3V PULE URATION = 8 s UTY CYCLE =.5%MAX I = 5A T J = 5 o C T J = 5 o C V G = 3.5V V G = V V G =.5V PULE URATION = 8 s UTY CYCLE =.5%MAX 8 V G, GATE TO OURCE VOLTAGE (V) FM8 N-Channel Power Trench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) 8 PULE URATION = 8 s UTY CYCLE =.5%MAX V = 5V T J = 5 o C T J = 5 o C T J = -55 o C I, REVERE RAIN CURRENT (A) 8.. V G = V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics E V, BOY IOE FORWAR VOLTAGE (V) Figure. ource to rain iode Forward Voltage vs ource Current FM8 Rev.C 3

4 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE(V) IA, AVALANCHE CURRENT(A) 8 I = 5A 8 Figure 7. V = V V = 5V V = 5V Q g, GATE CHARGE(nC) f = MHz V G = V 3. V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 5 o C T J = 5 o C.. t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) I, RAIN CURRENT (A) 5 5 Limited by Package V G =.5V V G = V R JC =. o C/W C iss C oss C rss T C, CAE TEMPERATURE ( o C) FM8 N-Channel Power Trench MOFET Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) ms THI AREA I LIMITE BY r (on) ms INGLE PULE. T J = MAX RATE s R JA = 5 o C/W s T A = 5 o C C... V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area ms P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R JA = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. ingle Pulse Maximum Power issipation FM8 Rev.C

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z JA.. UTY CYCLE-ECENING ORER = INGLE PULE R JA = 5 o C/W E t, RECTANGULAR PULE URATION (sec) Figure 3. Transient Thermal Response Curve P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z JA x R JA + T A FM8 N-Channel Power Trench MOFET FM8 Rev.C 5

6 imensional Outline and Pad Layout FM8 N-Channel Power Trench MOFET FM8 Rev.C

7 tm tm tm TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-PM Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EcoPARK EfficentMax EZWITCH * * Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FlashWriter * FP F-PF FRFET Global Power Resource M Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Millerrive MotionMax Motion-PM OPTOLOGIC OPTOPLANAR PP PM Power-PM PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw /W /kw at a time martmax MART TART PM TEALTH uperfet uperot -3 uperot - uperot -8 upremo yncfet ync-lock * The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault etect TRUECURRENT * eres UHC Ultra FRFET UniFET VCX VisualMax X FM8 N-Channel Power Trench MOFET *Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I FM8 Rev.C 7