Applications. Bottom. Pin 1 S S S. Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V
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1 FM4435BZ P-Channel PowerTrench MOFET -3 V, -8 A, mω Features Max r (on) = mω at V G = - V, I = -9. A Max r (on) = 37 mω at V G = -4.5 V, I = -6.5 A Extended V G range (-5 V) for battery applications High performance trench technology for extremely low r (on) High power and current handling capability HBM E protection level >7 kv typical (Note 4) % UIL tested Termination is Lead-free and RoH Compliant Top Bottom General escription March This P-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications High side in C-C Buck Converters Notebook battery power management Load switch in Notebook Pin G G FM4435BZ P-Channel Power Trench MOFET 7 8 Power 56 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage -3 V V G Gate to ource Voltage ±5 V Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C -8 I -Continuous (ilicon limited) T C = 5 C -35 -Continuous T A = 5 C (Note a) -9. A -Pulsed -5 E A ingle Pulse Avalanche Energy (Note 3) 8 mj Power issipation T C = 5 C 39 P Power issipation T A = 5 C (Note a).5 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case 3. R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM4435BZ FM4435BZ Power 56 3 mm 3 units
2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = -5 μa, V G = V -3 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = -5 μa, referenced to 5 C -3 mv/ C I Zero Gate Voltage rain Current V = -4 V, V G = V - μa I G Gate to ource Leakage Current V G = ±5 V, V = V ± μa On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = -5 μa V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient ynamic Characteristics I = -5 μa, referenced to 5 C 6 mv/ C V G = - V, I = -9. A 5 V r (on) tatic rain to ource On Resistance G = -4.5 V, I = -6.5 A 37 mω V G = - V, I = -9. A 8 T J = 5 C g F Forward Transconductance V = -5 V, I = -9. A 5 C iss Input Capacitance 54 5 pf V = -5 V, V G = V, C oss Output Capacitance 9 39 pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance 5 Ω FM4435BZ P-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 9 7 ns t r Rise Time V = -5 V, I = -9. A, 8 ns t d(off) Turn-Off elay Time V G = - V, R GEN = 6 Ω ns t f Fall Time 9 33 ns Q g Total Gate Charge V G = V to - V nc Q g Total Gate Charge V G = V to -4.5 V V = -5 V, 8 5 nc Q gs Gate to ource Charge I = -9. A 5 nc Q gd Gate to rain Miller Charge 9 nc rain-ource iode Characteristics V G = V, I = -.9 A (Note ).75. V ource to rain iode Forward Voltage V V G = V, I = -9. A (Note ).86.5 t rr Reverse Recovery Time 5 39 ns I F = -9. A, di/dt = A/μs Q rr Reverse Recovery Charge nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a b) 5 C/W when mounted in pad of oz copper on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 μs, uty cycle <.%. 3. E A of 8 mj is based on starting T J = 5 C, L = mh, I A = -6 A, V = -7 V, V G = - V. % tested at L =.3 mh, I A = -8 A. 4. The diode connected between the gate and source serves only as protection against E. No gate overvoltage rating is implied.
3 Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE V G = -3.5 V PULE URATION = 8 μs UTY CYCLE =.5% MAX Figure. V G = - V V G = -6 V V G = -4.5 V V G = -4 V -V, RAIN TO OURCE VOLTAGE (V) I = - 9 A V G = - V NORMALIZE RAIN TO OURCE ON-REITANCE. V G = - V I, RAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On- Resistance vs Junction Temperature r(on), RAIN TO OURCE ON-REITANCE (mω) V G = -3.5 V V G = -4 V PULE URATION = 8 μs UTY CYCLE =.5% MAX Figure 4. I = -9 A V G = -4.5 V V G = -6 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V G, GATE TO OURCE VOLTAGE (V) On-Resistance vs Gate to ource Voltage FM4435BZ P-Channel PowerTrench MOFET -I, RAIN CURRENT (A) PULE URATION = 8 μs UTY CYCLE =.5% MAX V = -5 V T J = -55 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics -I, REVERE RAIN CURRENT (A) 5.. V G = V T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 3
4 Typical Characteristics T J = 5 C unless otherwise noted -VG, GATE TO OURCE VOLTAGE (V) -IA, AVALANCHE CURRENT (A) I = -9 A Q g, GATE CHARGE (nc) Figure 7. V = -5 V V = - V V = - V. 3 -V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage.. t AV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive witching Capability T J = o C CAPACITANCE (pf) -I, RAIN CURRENT (A) f = MHz V G = V Package Limited V G = -4.5 V C iss C oss C rss V G = - V R θjc = 3. o C/W T C, CAE TEMPERATURE ( o C) Figure. Maximum Continuous rain Current vs Cate Temperature FM4435BZ P-Channel PowerTrench MOFET -Ig, GATE LEAKAGE CURRENT (A) - - VG = V V G, GATE TO OURCE VOLTAGE (V) Figure. Gate Leakage Current vs Gate to ource Voltage -I, RAIN CURRENT (A) ms THI AREA I ms LIMITE BY r (on) INGLE PULE s. TJ = MAX RATE s R θja = 5 o C/W C T A = 5 o C..5. -V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area μs ms 4
5 Typical Characteristics T J = 5 C unless otherwise noted P (PK), PEAK TRANIENT POWER (W) NORMALIZE THERMAL IMPEANCE, Z θja INGLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure 3. ingle Pulse Maximum Power issipation.. UTY CYCLE-ECENING ORER = INGLE PULE R θja = 5 o C/W P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FM4435BZ P-Channel PowerTrench MOFET t, RECTANGULAR PULE URATION (sec) Figure 4. Junction-to-Ambient Transient Thermal Response Curve 5
6 imensional Outline and Pad Layout FM4435BZ P-Channel PowerTrench MOFET 6
7 tm tm tm TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-PM Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FlashWriter * FP F-PF FRFET Global Power Resource M Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak Millerrive MotionMax Motion-PM OptiHiT OPTOLOGIC OPTOPLANAR PP PM Power-PM PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw/w/kw at a time ignalwise martmax MART TART PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * *Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. The Power Franchise The Right Technology for Your uccess TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax X FM4435BZ P-Channel PowerTrench MOFET ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PROUCT TATU EFINITION efinition of Terms. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I5 7
D 5. Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V Drain Current -Continuous T
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