MOSFET. Features. 175 C maximum junction temperature rating TO-263AB. FDB Series. TA=25 o C unless otherwise noted

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1 FP83L/FB83L N-Channel Logic Level PowerTrench eneral escription This N-Channel Logic level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional switching PWM controllers. These MOFET feature faster switching and lower gate charge than other MOFET with comparable R (on) specifications. The result is a MOFET that is easy and safer to drive (even at very high frequencies), and C/C power supply designs with higher overall efficiency. MOFET Features 8 A, 3 V. May 3 R (ON) =.35 V = V R (ON) =.45 V = 4.5 V Critical C electrical parameters specified at elevated temperature Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor High performance trench technology for extremely low R (ON) FP83L/FB83L 75 C maximum junction temperature rating TO- FP eries TO-63AB FB eries Absolute Maximum Ratings TA=5 o C unless otherwise noted ymbol Parameter Ratings Units V rain-ource Voltage 3 V V ate-ource Voltage ± V I rain Current Continuous (Note ) 8 A Pulsed (Note ) 3 P Total Power T C = 5 C 87 W erate above 5 C.5 W C T J, T T Operating and torage Junction Temperature Range -65 to +75 C T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds 75 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case.8 C/W R θja Thermal Resistance, Junction-to-Ambient 6.5 C/W Fairchild emiconductor Corporation FP83L/FB83L Rev C(W)

2 Electrical Characteristics T A = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units rain-ource Avalanche Ratings (Note ) W ingle Pulse rain-ource V = V, I = 8 A 5 mj Avalanche Energy I AR Maximum rain-ource Avalanche Current 8 A Off Characteristics BV rain ource Breakdown Voltage V = V, I = 5 µa 3 V BV Breakdown Voltage Temperature T J Coefficient I = 5 µa, Referenced to 5 C 3 mv/ C I Zero ate Voltage rain Current V = 4 V, V = V µa I F ate Body Leakage, Forward V = V, V = V na I R ate Body Leakage, Reverse V = V V = V na FP83L/FB83L On Characteristics (Note ) V (th) ate Threshold Voltage V = V, I = 5 µa.5 V V(th) T J R (on) ate Threshold Voltage Temperature Coefficient tatic rain ource On Resistance I = 5 µa, Referenced to 5 C V = V, I = 8 A T J=5 C 5 mv/ C V = 4.5 V, I = 7 A I (on) On tate rain Current V = V, V = V 6 A g F Forward Transconductance V = V, I = 8 A 7 ynamic Characteristics C iss Input Capacitance V = 5 V, V = V, 5 pf C oss Output Capacitance f =. MHz 7 pf C rss Reverse Transfer Capacitance 65 pf witching Characteristics (Note ) t (on) Turn On elay Time V = 5 V, I = 5 A, 35 ns t r Turn On Rise Time V = 4.5 V, R EN = Ω 85 5 ns R = Ω t (off) Turn Off elay Time 6 ns Turn Off Fall Time 4 ns t f Q g Total ate Charge V = 5 V, 7 nc Q gs ate ource Charge I = 8 A, V = 5 V 7 nc ate rain Charge 48 nc Q gd rain ource iode Characteristics and Maximum Ratings I Maximum Continuous rain ource iode Forward Current (Note ) 8 A I M Maximum Pulsed rain-ource iode Forward Current (Note ) 3 A V rain ource iode Forward Voltage V = V, I = 8 A (Note ).3 V Notes: mω. Pulse Test: Pulse Width < 3µs, uty Cycle <.% FP83L/FB83L Rev C(W)

3 Typical Characteristics I, RAIN-OURCE CURRENT (A) V 3.5V 3.V.5V.5.5 V, RAIN-OURCE VOLTAE (V) R (ON), NORMALIZE RAIN-OURCE ON-REITANCE V =.5V 3.V 3.5V 4.5V 6.V V I, RAIN CURRENT (A) FP83L/FB83L Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and ate Voltage. R (ON), NORMALIZE RAIN-OURCE ON-REITANCE I = 8A V = V T J, JUNCTION TEMPERATURE ( C) R (ON), ON-REITANCE (OHM). I = 4A T A = 5 o C T A = 5 o C V, ATE TO OURCE VOLTAE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with ate-to-ource Voltage. I, RAIN CURRENT (A) V = V T A = 5 C 5 C -55 C 3 4 V, ATE TO OURCE VOLTAE (V) Figure 5. Transfer Characteristics. I, REVERE RAIN CURRENT (A) 6... T = 5 C A 5 C -55 C V = V V, BOY IOE FORWAR VOLTAE (V) Figure 6. Body iode Forward Voltage Variation with ource Current and Temperature. FP83L/FB83L Rev C(W)

4 Typical Characteristics V, ATE-OURCE VOLTAE (V) I = 8A V = 5V V 5V CAPACITANCE (pf) 8 5 V = V C iss C oss C rss FP83L/FB83L Q g, ATE CHARE (nc) Figure 7. ate Charge Characteristics V, RAIN TO OURCE VOLTAE (V) Figure 8. Capacitance Characteristics. 6 5 I, RAIN CURRENT (A) THI AREA I LIMITE BY r (on) INLE PULE T J = MAX RATE R θjc =.8 o C/W T C = 5 o C CURVE BENT TO MEAURE ATA μs ms ms ms C. V, RAIN-OURCE VOLTAE (V) Figure 9. Maximum afe Operating Area. POWER (W) 4 3 INLE PULE R θjc =.8 C/W T C = 5 C , INLE PULE TIME (mec) Figure. ingle Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE = ingle Pulse R θjc (t) = r(t) * R R =.8 C/W θjc θjc T J - T C = P * R θjc(t) uty Cycle, = t /t t,time (ms) P(pk) t t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. FP83L/FB83L Rev C(W)

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