Applications. Bottom. Pin 1 S S S. Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V

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1 FM4435BZ P-Channel PowerTrench MOFET -30 V, -8 A, 20 mω Features Max r (on) = 20 mω at V G = -0 V, I = -9.0 A Max r (on) = 37 mω at V G = -4.5 V, I = -6.5 A Extended V G range (-25 V) for battery applications High performance trench technology for extremely low r (on) High power and current handling capability HBM E protection level >7 kv typical (Note 4) 00% UIL tested Termination is Lead-free and RoH Compliant Top Bottom General escription This P-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications High side in C-C Buck Converters Notebook battery power management Load switch in Notebook Pin G 5 6 October G FM4435BZ P-Channel Power Trench MOFET Power 56 MOFET Maximum Ratings T A = 25 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage -30 V V G Gate to ource Voltage ±25 V I Thermal Characteristics rain Current -Continuous (Package limited) T C = 25 C -8 -Continuous (ilicon limited) T C = 25 C -35 -Continuous T A = 25 C (Note a) Pulsed -50 E A ingle Pulse Avalanche Energy (Note 3) 8 mj Power issipation T C = 25 C 39 P Power issipation T A = 25 C (Note a) 2.5 T J, T TG Operating and torage Junction Temperature Range -55 to +50 C A W R θjc Thermal Resistance, Junction to Case 3.2 R θja Thermal Resistance, Junction to Ambient (Note a) 50 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM4435BZ FM4435BZ Power mm 3000 units 20 Fairchild emiconductor Corporation

2 Electrical Characteristics T J = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = -250 μa, V G = 0 V -30 V ΔBV Breakdown Voltage Temperature I ΔT J Coefficient = -250 μa, referenced to 25 C -23 mv/ C I Zero Gate Voltage rain Current V = -24 V, V G = 0 V - μa I G Gate to ource Leakage Current V G = ±25 V, V = 0 V ±0 μa On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = -250 μa V ΔV G(th) ΔT J r (on) Gate to ource Threshold Voltage Temperature Coefficient tatic rain to ource On Resistance ynamic Characteristics I = -250 μa, referenced to 25 C 6 mv/ C V G = -0 V, I = -9.0 A 5 20 V G = -4.5 V, I = -6.5 A V G = -0 V, I = -9.0 A T J = 25 C 2 28 g F Forward Transconductance V = -5 V, I = -9.0 A 25 C iss Input Capacitance pf V = -5 V, V G = 0 V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance 5 Ω mω FM4435BZ P-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 9 7 ns t r Rise Time V = -5 V, I = -9.0 A, 0 8 ns t d(off) Turn-Off elay Time V G = -0 V, R GEN = 6 Ω ns t f Fall Time 9 33 ns Q g Total Gate Charge V G = 0 V to -0 V Q g Total Gate Charge V G = 0 V to -4.5 V V = -5 V, 8 25 nc Q gs Gate to ource Charge I = -9.0 A 5 nc rain-ource iode Characteristics nc Q gd Gate to rain Miller Charge 9 nc V ource to rain iode Forward Voltage V G = 0 V, I = -.9 A (Note 2) V G = 0 V, I = -9.0 A (Note 2) t rr Reverse Recovery Time ns I F = -9.0 A, di/dt = 00 A/μs Q rr Reverse Recovery Charge 2 2 nc Notes:. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. V a) 50 C/W when mounted on a b) 25 C/W when mounted in 2 pad of 2 oz copper on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, uty cycle < 2.0%. 3. E A of 8 mj is based on starting T J = 25 C, L = mh, I A = -6 A, V = -27 V, V G = -0 V. 00% tested at L = 0.3 mh, I A = -8 A. 4. The diode connected between the gate and source serves only as protection against E. No gate overvoltage rating is implied. 20 Fairchild emiconductor Corporation 2

3 Typical Characteristics T J = 25 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE PULE URATION = 80 μs UTY CYCLE = 0.5% MAX Figure. V G = -6 V V G = -4.5 V V G = -0 V V G = -4 V V G = -3.5 V -V, RAIN TO OURCE VOLTAGE (V) I = - 9 A V G = -0 V NORMALIZE RAIN TO OURCE ON-REITANCE On-Region Characteristics Figure 2. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On- Resistance vs Junction Temperature r(on), RAIN TO OURCE ON-REITANCE (mω) V G = -3.5 V V G = -4 V PULE URATION = 80 μs UTY CYCLE = 0.5% MAX Figure 4. -I, RAIN CURRENT (A) I = -9 A T J = 25 o C T J = 25 o C V G = -4.5 V V G = -6 V V G = -0 V PULE URATION = 80 μs UTY CYCLE = 0.5% MAX V G, GATE TO OURCE VOLTAGE (V) On-Resistance vs Gate to ource Voltage FM4435BZ P-Channel PowerTrench MOFET -I, RAIN CURRENT (A) PULE URATION = 80 μs UTY CYCLE = 0.5% MAX V = -5 V T J = 25 o C T J = 25 o C T J = -55 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics -I, REVERE RAIN CURRENT (A) V G = 0 V T J = 25 o C T J = 25 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 20 Fairchild emiconductor Corporation 3

4 Typical Characteristics T J = 25 C unless otherwise noted -VG, GATE TO OURCE VOLTAGE (V) -IA, AVALANCHE CURRENT (A) I = -9 A Figure 7. V = -5 V V = -0 V V = -20 V Q g, GATE CHARGE (nc) V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 25 o C T J = 25 o C t AV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive witching Capability T J = 00 o C CAPACITANCE (pf) -I, RAIN CURRENT (A) f = MHz V G = 0 V Package Limited R θjc = 3.2 o C/W V G = -4.5 V C iss C oss C rss V G = -0 V T C, CAE TEMPERATURE ( o C) Figure 0. Maximum Continuous rain Current vs Cate Temperature FM4435BZ P-Channel PowerTrench MOFET -Ig, GATE LEAKAGE CURRENT (A) VG = 0 V Figure. T J = 25 o C T J = 25 o C -V G, GATE TO OURCE VOLTAGE (V) Gate Leakage Current vs Gate to ource Voltage -I, RAIN CURRENT (A) THI AREA I LIMITE BY r (on) INGLE PULE TJ = MAX RATE R θja = 25 o C/W C T A = 25 o C V, RAIN to OURCE VOLTAGE (V) Figure 2. Forward Bias afe Operating Area 00 μs ms 0 ms 00 ms s 0 s 20 Fairchild emiconductor Corporation 4

5 Typical Characteristics T J = 25 C unless otherwise noted P (PK), PEAK TRANIENT POWER (W) NORMALIZE THERMAL IMPEANCE, Z θja INGLE PULE R θja = 25 o C/W T A = 25 o C UTY CYCLE-ECENING ORER = t, PULE WITH (sec) Figure 3. ingle Pulse Maximum Power issipation INGLE PULE R θja = 25 o C/W P M t t 2 NOTE: UTY FACTOR: = t /t 2 PEAK T J = P M x Z θja x R θja + T A FM4435BZ P-Channel PowerTrench MOFET t, RECTANGULAR PULE URATION (sec) Figure 4. Junction-to-Ambient Transient Thermal Response Curve 20 Fairchild emiconductor Corporation 5

6 imensional Outline and Pad Layout (3.40) PKG LC (0.50) (0.34) (0.30) (2X) PKG 8 CL 5 4 TOP VIEW IE VIEW A B EE ETAIL C (8X) 0.0 C A B (0.52) X C 0.08 C EE ETAIL B OPTIONAL RAFT ANGLE MAY APPEAR ON FOUR IE OF THE PACKAGE ETAIL C CALE: 2: C EATING PLANE LAN PATTERN RECOMMENATION ETAIL B CALE: 2: KEEP OUT AREA NOTE: UNLE OTHERWIE PECIFIE A. PACKAGE TANAR REFERENCE: JEEC MO-240, IUE A, VAR. AA, ATE OCTOBER B. IMENION O NOT INCLUE BURR OR MOL FLAH. MOL FLAH OR BURR OE NOT EXCEE 0.0MM. C. ALL IMENION ARE IN MILLIMETER.. IMENIONING AN TOLERANCING PER AME Y4.5M-994. E. IT I RECOMMENE TO HAVE NO TRACE OR VIA WITHIN THE KEEP OUT AREA. F. RAWING FILE NAME: PQFN08AREV8 FM4435BZ P-Channel PowerTrench MOFET BOTTOM VIEW Package drawings are provided as a service to customers considering Fairchild components. rawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild emiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild emiconductor s online packaging area for the most recent package drawings: 20 Fairchild emiconductor Corporation 6

7 TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Awinda AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FP F-PF FRFET Global Power Resource M GreenBridge Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR Marking mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax MotionGrid MTi MTx MVN mwaver OptoHiT tm PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw/w/kw at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X Xsens 仙童 FM4435BZ P-Channel PowerTrench MOFET *Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. TO OBTAIN THE LATET, MOT UP-TO-ATE ATAHEET AN PROUCT INFORMATION, VIIT OUR WEBITE AT FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Preliminary No Identification Needed Obsolete Formative / In esign First Production Full Production Not In Production 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. atasheet contains the design specifications for product development. pecifications may change in any manner without notice. atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. 20 Fairchild emiconductor Corporation 7 Rev. I7

8

9 TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AttitudeEngine Awinda AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficientMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FastvCore FETBench FP F-PF FRFET Global Power Resource M GreenBridge Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR Making mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax MotionGrid MTi MTx MVN mwaver OptoHiT OPTOLOGIC OPTOPLANAR Power upply Webesigner PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw/w/kw at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * eres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X Xsens 仙童 * Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. TO OBTAIN THE LATET, MOT UP-TO-ATE ATAHEET AN PROUCT INFORMATION, VIIT OUR WEBITE AT FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. AUTHORIZE UE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: () automotive or other transportation, (2) military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild s Worldwide Terms and Conditions of ale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition atasheet contains the design specifications for product development. pecifications may change Advance Information Formative / In esign in any manner without notice. atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make No Identification Needed Full Production changes at any time without notice to improve the design. atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I77 Fairchild emiconductor Corporation

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Applications. Bottom. Pin 1 S S S. Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V

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