Test Conditions. V GS(th) Vdc. V GS(Q) 3.8 Vdc. V DS(on) 0.26 Vdc

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1 echnical Data RF Power Field Effect ransistor N- Channel Enhancement- ode Lateral OSFE Designed for PCN and PCS base station applications at frequencies from 900 to 2000 Hz. Suitable for D, CD and multicarrier amplifier applications. ypical 2-Carrier N-CD Performance for V DD = 28 Volts, I DQ = 200 m, P out = 26 Watts vg., f = 990 Hz, IS-95 CD (Pilot, Sync, Paging, raffic Codes 8 hrough 3) Channel Bandwidth =.2288 Hz. PR = % Probability on CCDF. Power Gain 3 db Drain Efficiency 25% 2.5 Hz Offset -37 dbc in.2288 Hz Bandwidth 885 khz Offset -5 db in 30 khz Bandwidth Capable of Handling 0: 28 Vdc, 960 Hz, 0 Watts CW Output Power Features Characterized with Series Equivalent Large- Signal Impedance Parameters Internally atched for Ease of Use Qualified Up to a aximum of 32 V Operation Integrated ESD Protection Lower hermal Resistance Package Low Gold Plating hickness on Leads, 40μ Nominal. RoHS Compliant In ape and Reel. R3 Suffix = 250 Units per 56 mm, 3 inch Reel. able. aximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -0.5, 65 Vdc Gate-Source Voltage V GS -0.5, 5 Vdc otal Device C = 25 C Derate above 25 C P D Storage emperature Range stg - 65 to 50 C Case Operating emperature C 50 C Operating Junction emperature J 200 C CW C = 25 C Derate above 25 C able 2. hermal Characteristics hermal Resistance, Junction to Case Case emperature 80 C, 5 W CW Case emperature 78 C, 26 W CW Document Number: RF5S930H- Rev. 3, 0/ Hz, 26 W VG., 28 V 2 x N-CD LERL N- CHNNEL RF POWER OSFE CSE 465B-03, SYLE NI- 880 CW 60 W W/ C W W/ C Characteristic Symbol Value (,2) Unit R θjc F calculator available at Select Software & ools/development ools/calculators to access F calculators by product. 2. Refer to N955, hermal easurement ethodology of RF Power mplifiers. Go to Select Documentation/pplication Notes - N955. C/W LS ORDER 3 OC 08 LS SHIP 4 Y 09, Inc., ll rights reserved.

2 able 3. ESD Protection Characteristics Human Body odel achine odel Charge Device odel est Conditions Class 2 (inimum) 4 (inimum) C7 (inimum) able 4. Electrical Characteristics ( C = 25 C unless otherwise noted) Characteristic Symbol in yp ax Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate- Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate hreshold Voltage (V DS = 0 Vdc, I D = 200 μdc) Gate Quiescent Voltage (V DS = 28 Vdc, I D = 200 mdc) Drain- Source On- Voltage (V GS = 0 Vdc, I D = 3 dc) Forward ransconductance (V DS = 0 Vdc, I D = 3 dc) Dynamic Characteristics Reverse ransfer Capacitance () (V DS = 28 Vdc ± 30 Hz, V GS = 0 Vdc) I DSS 0 μdc I DSS μdc I GSS μdc V GS(th) Vdc V GS(Q) 3.8 Vdc V DS(on) 0.26 Vdc g fs 7.5 S C rss 2.7 pf Functional ests (In Freescale est Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 200 m, P out = 26 W vg., f = Hz, f2 = 990 Hz, 2- Carrier N- CD,.2288 Hz Channel Bandwidth Carriers. CPR measured in 30 khz Channel ±885 khz Offset. I3 measured in.2288 Hz Channel ±2.5 Hz Offset. PR = % Probability on CCDF. Power Gain G ps 2 3 db Drain Efficiency η D % Intermodulation Distortion I dbc djacent Channel Power Ratio CPR dbc Input Return Loss IRL -5-9 db. Part internally matched both on input and output. LS ORDER 3 OC 08 LS SHIP 4 Y 09 2

3 RF INPU V BIS C B R R3 R2 C0 C9 C6 C7 C6 C7 C8 C9 C20 C2 C22 C23 C8 C5 Z Z2 Z3 Z4 Z5 Z6 C2 C3 C4 C Z0 Z8 Z9 Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x x 0.60 aper Z x icrostrip Z x icrostrip Z x icrostrip Z0, Z.280 x icrostrip Z x.080 icrostrip C5 B2 R4 Z C2 C4 C3 DU Z2 C26 Z4 Z3, Z4.25 x icrostrip Z x.080 icrostrip Z x.080 icrostrip Z x.080 icrostrip Z8.075 x x 0.25 aper Z x 0.20 icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip PCB rlon GX , 0.03, ε r = 2.55 Figure. est Circuit Schematic able 5. est Circuit Component Designations and Values Z7 Z3 Z5 Z6 Z7 Z8 Z9 Z20 Z2 C25 V SUPPLY C24 RF Z22 Z23 Z24 OUPU C27 C28 C29 C30 C3 C32 C33 C34 Part Description Part Number anufacturer B, B2 Short RF Beads Fair- Rite C 0.8 pf Chip Capacitor C00B0R8B500X C C2, C pf Gigatrim Variable Capacitors 2727SL Johanson C3 2.2 pf Chip Capacitor C00B2R2B500X C C5.7 pf Chip Capacitor C00BR7B500X C C8, C3 9. pf Chip Capacitors C00B9RC500X C C9, C μf, 25 V antalum Capacitors 49C05K05S Kemet C0 47 μf, 50 V Electrolytic Capacitor 55D07050BB6E3 Vishay C6, C4, C7, C8, C9, C28, 0. μf Chip Capacitors CDR33BX04KYS Kemet C29, C30 C7, C2, C6, C pf Chip Capacitors C00B02J50X C C5, C pf Chip Capacitors C00B8R2C500X C C20, C2, C22, C23, C3, C32, 22 μf, 35 V antalum Capacitors 49D226035S Kemet C33, C34 C μf, 63 V Electrolytic Capacitor EKE630ELL47K25S ulticomp C pf Chip Capacitor C00B6R2C500X C R k, /4 W Chip Resistor CRCW20600FKE Vishay R2 560 k, /4 W Chip Resistor CRCW FKE Vishay R3, R4 2, /4 W Chip Resistors CRCW2062R0FKE Vishay LS ORDER 3 OC 08 LS SHIP 4 Y 09 3

4 C C2 V GG C0 R R2 C3 C5 C4 C9 C B R3 C7 C2 C8 C4 B2 R4 C3 C6 RF5S930 Rev 5 CU OU RE C20 C2 Figure 2. est Circuit Component Layout C6 C27 C8 C5 C26 C29 C7 C28 C9 C30 C22 C23 C33 C3 C32 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either otorola or Freescale markings during the transition period. hese changes will have no impact on form, fit or function of the current product. C34 C24 VDD C25 LS ORDER 3 OC 08 LS SHIP 4 Y 09 4

5 YPICL CHRCERISICS G ps, POWER GIN (db) INERODULION DISORION (dbc) ID, I DQ = 800 m G ps, POWER GIN (db) G ps 30 2 η D 25 V DD = 28 Vdc, P out = 26 W (vg.), I DQ = 200 m 20 2 Carrier N CD, 2.5 Hz Carrier Spacing 0 IRL.2288 Hz Channel Bandwidth 0 9 PR = % Probability (CCDF) 20 8 I CPR V DD = 28 Vdc, f = Hz, f2 = Hz wo one easurement, 2.5 Hz one Spacing 500 m 200 m 900 m 600 m f, FREQUENCY (Hz) Figure Carrier N- CD Broadband P out = 26 Watts vg m P out, OUPU POWER (WS) PEP P out, OUPU POWER (WS) PEP Figure 4. wo- one Power Gain versus Output Power 3rd Order 5th Order 7th Order V DD = 28 Vdc, P out = 30 W (PEP), I DQ = 200 m wo one easurements (f f2)/2 = Center Frequency of 960 Hz WO ONE SPCING (Hz) Figure 6. Intermodulation Distortion Products versus one Spacing 0 ID, HIRD ORDER INERODULION DISORION (dbc) P out, OUPU POWER (dbm) I DQ = 800 m I3 (dbc), CPR (dbc) INPU REURN LOSS (db) IRL, V DD = 28 Vdc, f = Hz, f2 = Hz wo one easurement, 2.5 Hz one Spacing 600 m η D, DRIN EFFICIENCY (%) 200 m 500 m Figure 5. hird Order Intermodulation Distortion versus Output Power P3dB = 53. dbm ( W) PdB = dbm (79.6 W) Ideal ctual V DD = 28 Vdc, I DQ = 200 m Pulsed CW, 8 μsec (on), msec (off) f = 960 Hz P in, INPU POWER (dbm) Figure 7. Pulse CW Output Power versus Input Power LS ORDER 3 OC 08 LS SHIP 4 Y

6 YPICL CHRCERISICS η D, DRIN EFFICIENCY (%), G ps, POWER GIN (db) 35 V DD = 28 Vdc, I DQ = 200 m I3 30 f = Hz, f2 = Hz 2 x N CD, 2.5 η D Hz Channel Bandwidth 40 PR = % Probability (CCDF) CPR G ps P out, OUPU POWER (WS) VG. (N CD) Figure 8. 2-Carrier N-CD CPR, I3, Power Gain and Drain Efficiency versus Output Power (db) I3 (dbc), CPR (dbc) F FCOR (HOURS X PS 2 ) N-CD ES SIGNL I3 in.2288 Hz Integrated BW CPR in 30 khz Integrated BW.2288 Hz Channel BW f, FREQUENCY (Hz) Figure Carrier N- CD Spectrum Figure 9. F Factor versus Junction emperature CPR in 30 khz Integrated BW 220 J, JUNCION EPERURE ( C) his above graph displays calculated F in hours x ampere 2 drain current. Life tests at elevated temperatures have correlated to better than ±0% of the theoretical prediction for metal failure. Divide F factor by I 2 D for F in a particular application. I3 in.2288 Hz Integrated BW LS ORDER 3 OC 08 LS SHIP 4 Y 09 6

7 f = 990 Hz f = 930 Hz Z load f Hz V DD = 28 V, I DQ =.2, P out = 26 W vg. Z source Ω j j j9.2 Z load Ω.48 - j j j.3 Z source = est circuit impedance as measured from gate to ground. Z load = est circuit impedance as measured from drain to ground. Input atching Network Z source f = 930 Hz Device Under est Z o = 0 Ω Z source f = 990 Hz Z load Output atching Network Figure. Series Equivalent Source and Load Impedance LS ORDER 3 OC 08 LS SHIP 4 Y 09 7

8 PCKGE DIENSIONS H B B (FLNGE) K G D bbb B bbb ccc 2 B B 3 C 2X (INSULOR) N (LID) Q bbb ccc aaa B R (LID) S B (INSULOR) B NOES:. DIENSIONING ND OLERNCING PER NSI Y CONROLLING DIENSION: INCH. 3. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. 4. DELEED INCHES ILLIEERS DI IN X IN X B C D E F G.00 BSC BSC H K N Q R S aaa REF 0.78 REF bbb 0.00 REF REF ccc 0.05 REF 0.38 REF E (FLNGE) SEING PLNE CSE 465B-03 ISSUE D NI-880 F SYLE : PIN. DRIN 2. GE 3. SOURCE 8

9 PRODUC DOCUENION Refer to the following documents to aid your design process. pplication Notes N955: hermal easurement ethodology of RF Power mplifiers Engineering Bulletins EB22: Using Data Sheet Impedances for RF LDOS Devices he following table summarizes revisions to this document. REVISION HISORY Revision Date Description 3 Nov Data sheet revised to reflect part status change, p., including use of applicable overlay. odified data sheet to reflect RF est Reduction described in Product and Process Change Notification number, PCN2779, p., 2 Updated Part Numbers in able 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 dded Product Documentation and Revision History, p. 9 9

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