Watts W/ C Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 200 C

Transcription

1 OTOROL SEICONDUCTOR TECHNICL DT Order this document by RF19125/D The RF Sub-icron OSFET Line RF Power Field Effect Transistor N-Channel Enhancement-ode Lateral OSFET Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TD, CD and multicarrier amplifier applications. Typical 2-Carrier N-CD Performance for V DD = 26 Volts, I DQ = 1300 m, f1 = Hz, f2 = Hz IS-95 CD (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Hz Channel Bandwidth Carrier. djacent Channels easured over a 30 khz Bandwidth at f1-885 khz and f khz. Distortion Products easured over Hz Bandwidth at f1-2.5 Hz and f Hz. Peak/vg. = % Probability on CCDF. Output Power 24 Watts vg. Power Gain 13.6 db Efficiency 22% CPR -51 db I dbc Internally atched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for aximum Gain and Insertion Phase Flatness Capable of Handling 5:1 26 Vdc, 1990 Hz, 125 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel Hz, 125 W, 26 V LTERL N- CHNNEL RF POWER OSFET CSE 465B-03, STYLE 1 NI-880 XIU RTINGS Rating Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS -0.5, +15 Vdc Total Device T C = 25 C Derate above 25 C P D Watts W/ C Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 200 C THERL CHRCTERISTICS Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case R θjc 0.53 C/W ESD PROTECTION CHRCTERISTICS Test Conditions Class Human Body odel achine odel 2 (inimum) 3 (inimum) (1) Refer to N1955/D, Thermal easurement ethodology of RF Power mplifiers. Go to Select Documentation/pplication Notes - N1955. NOTE - CUTION - OS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging OS devices should be observed. REV 4 otorola, OTOROL Inc RF DEVICE DT 1

2 ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol in Typ ax Unit OFF CHRCTERISTICS Drain-Source Breakdown Voltage (V GS = 0 Vdc, I D = 100 µdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) ON CHRCTERISTICS Forward Transconductance (V DS = 10 Vdc, I D = 3 dc) Gate Threshold Voltage (V DS = 10 Vdc, I D = 300 µdc) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 1300 mdc) Drain-Source On-Voltage (V GS = 10 Vdc, I D = 3 dc) DYNIC CHRCTERISTICS Reverse Transfer Capacitance (1) (V DS = 26 Vdc, V GS = 0, f = 1 Hz) V (BR)DSS 65 Vdc I GSS 1 µdc I DSS 10 µdc g fs 9 S V GS(th) 2 4 Vdc V GS(Q) Vdc V DS(on) Vdc C rss 5.4 pf FUNCTIONL TESTS (In otorola Test Fixture) 2-Carrier N-CD, Hz Channel Bandwidth Carriers. Peak/vg = % Probability on CCDF. Common-Source mplifier Power Gain (, P out = 24 W vg, I DQ = 1300 m, f1 = 1930 Hz, f2 = Hz and f1 = Hz, f2 = 1990 Hz) G ps db Drain Efficiency (, P out = 24 W vg, I DQ = 1300 m, f1 = 1930 Hz, f2 = Hz and f1 = Hz, f2 = 1990 Hz) Intermodulation Distortion (, P out = 24 W vg, I DQ = 1300 m, f1 = 1930 Hz, f2 = Hz and f1 = Hz, f2 = 1990 Hz; I3 measured over Hz Bandwidth at f1-2.5 Hz and f Hz) djacent Channel Power Ratio (, P out = 24 W vg, I DQ = 1300 m, f1 = 1930 Hz, f2 = Hz and f1 = Hz, f2 = 1990 Hz; CPR measured over 30 khz Bandwidth at f1-885 Hz and f Hz) Input Return Loss (, P out = 24 W vg, I DQ = 1300 m, f1 = 1930 Hz, f2 = Hz and f1 = Hz, f2 = 1990 Hz) Output ismatch Stress (, P out = 125 W CW, I DQ = 1300 m, f = 1930 Hz, VSWR = 5:1, ll Phase ngles at Frequency of Test) (1) Part is internally matched both on input and output. η % ID dbc CPR dbc IRL db Ψ No Degradation In Output Power Before and fter Test 2

3 ELECTRICL CHRCTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol in Typ ax Unit FUNCTIONL TESTS (In otorola Test Fixture) Two-Tone Common-Source mplifier Power Gain (, P out = 125 W PEP, I DQ = 1300 m, f1 = 1930 Hz, f2 = 1990 Hz, Tone Spacing = 100 khz) Two-Tone Drain Efficiency (, P out = 125 W PEP, I DQ = 1300 m, f1 = 1930 Hz, f2 = 1990 Hz, Tone Spacing = 100 khz) Third Order Intermodulation Distortion (, P out = 125 W PEP, I DQ = 1300 m, f1 = 1930 Hz, f2 = 1990 Hz, Tone Spacing = 100 khz) Input Return Loss (, P out = 125 W PEP, I DQ = 1300 m, f1 = 1930 Hz, f2 = 1990 Hz, Tone Spacing = 100 khz) P out, 1 db Compression Point (, I DQ = 1300 m, f = 1990 Hz) G ps 13.5 db η 35 % ID -30 dbc IRL -13 db P1dB 130 W 3

4 V GG R1 B1 R3 R2 + C5 C4 C3 C2 C7 + C8 + C9 L1 C C11 C12 C13 + C14 V DD Z4 Z8 RF INPUT Z1 Z2 Z3 Z5 Z6 Z7 RF OUTPUT C1 DUT C6 Z1, Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Board Glass Teflon, Keene GX , ε r = 2.55 PCB Etched Circuit Boards RF19125 Rev. 5, CR Figure 1. RF19125 Test Circuit Schematic Table 1. RF19125 Test Circuit Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite # C1 51 pf Chip Capacitor, TC #100B510JC500X C2, C7 5.1 pf Chip Capacitors, TC #100B5R1JC500X C3, C pf Chip Capacitors, TC #100B102JC500X C4, C F Chip Capacitors, Kemet #CDR33BX104KWS C5 0.1 F Tantalum Chip Capacitor, Kemet #T491C C6 10 pf Chip Capacitor, TC #100B100JC500X C8 10 F Tantalum Chip Capacitor, Kemet #T491X106K035S4394 C9, C12, C13, C14 22 F Tantalum Chip Capacitors, Kemet #T491X226K035S4394 L1 1 Turn, #20 WG, ID, otorola N1, N2 Type N Flange ounts, Omni Spectra # R1 1.0 kω, 1/8 W Chip Resistor R2 220 kω, 1/8 W Chip Resistor R3 10 Ω, 1/8 W Chip Resistor 4

5 R1 R2 C5 B1 C4 C3 C2 C8 C9 C7 R3 L1 C11 C10 C12 C13 C14 C1 CUT OUT C6 RF19125 Rev 5 Figure 2. RF19125 Test Circuit Component Layout 5

6 TYPICL CHRCTERISTICS η, DRIN EFFICIENCY (%), G ps, POWER GIN (db) I3, THIRD ORDER INTERODULTION DISTORTION (dbc) P in, INPUT POWER (WTTS), G ps, POWER GIN (db) Figure 3. 2-Carrier CD CPR, I3, Power Gain and Drain Efficiency versus Output Power , I DQ = 1300 m f1 = Hz, f2 = Hz Hz Channel Bandwidth Peak/vg. = % Probability (CCDF) P out, OUTPUT POWER (WTTS vg.) N CD I DQ = 900 m 1700 m 1500 m Gps I3 η I DQ = 1300 m f = 1960 Hz CPR f = 1960 Hz 100 khz Tone Spacing 1100 m 1300 m P out, OUTPUT POWER (WTTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power Gps η P in P out, OUTPUT POWER (WTTS) Figure 7. CW Performance η, DRIN EFFICIENCY (%) I3 (dbc), CPR (dbc) INTERODULTION DISTORTION (dbc) η, DRIN EFFICIENCY (%) ID, η, DRIN EFFICIENCY (%), G ps, POWER GIN (db) η I DQ = 1300 m f = 1960 Hz 100 khz Tone Spacing IRL 3rd Order 5th Order 7th Order η P out, OUTPUT POWER (WTTS) PEP Figure 4. Intermodulation Distortion Products versus Output Power 2 Carrier N CD, 2.5 Hz Carrier Spacing Hz Channel Bandwidth Peak/vg. = 0.01% Probability (CCDF) 16 I3 40 P out = 24 Watts (vg.) 14 CPR I DQ = 1300 m 50 Gps f, FREQUENCY (Hz) Figure 6. 2-Carrier N-CD Broadband Performance η ID I DQ = 1300 m f = 1960 Hz 100 khz Tone Spacing V DD, DRIN SUPPLY (V) Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply INPUT RETURN LOSS (db) η, DRIN EFFICIENCY (%) I3 (dbc), CPR (dbc), IRL, INTERODULTION DISTORTION (dbc) ID, 6

7 TYPICL CHRCTERISTICS G ps, POWER GIN (db) I DQ = 1700 m 1500 m 1300 m 1100 m 900 m P out, OUTPUT POWER (WTTS) PEP f = 1960 Hz 100 khz Tone Spacing Figure 9. Two-Tone Power Gain versus Output Power G ps, POWER GIN (db), η, DRIN EFFICIENCY (%) η IRL P out = 125 W (PEP) I DQ = 1300 m khz Tone Spacing ID G ps f, FREQUENCY (Hz) Figure 10. Two-Tone Broadband Performance IRL, INPUT RETURN LOSS (db) INTERODULTION DISTORTION (dbc) ID, INTERODULTION DISTORTION (dbc) ID, I DQ = 1300 m f = 1960 Hz 3rd Order 5th Order 7th Order f, TONE SPCING (khz) Figure 11. Intermodulation Distortion Products versus Two- Tone Tone Spacing (db) khz BW f Hz BW f Hz BW Hz BW Hz BW f, FREQUENCY (Hz) 30 khz BW Figure Carrier N-CD Spectrum 7

8 f = 1930 Hz Z load f = 1990 Hz Z o = 10 Ω f = 1990 Hz f = 1930 Hz Z source V DD = 26 V, I DQ = 1300 m, P out = 24 W (vg.) f Hz Z source Ω j j j4.93 Z load Ω j j j1.02 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input atching Network Device Under Test Output atching Network Z source Z load Figure 13. Series Equivalent Input and Output Impedance 8

9 NOTES 9

10 NOTES 10

11 NOTES 11

12 PCKGE DIENSIONS B B (FLNGE) H K bbb bbb ccc G 1 2 D T T T 4 B B B 3 2X (INSULTOR) N (LID) Q bbb T ccc aaa B T T R (LID) S B (INSULTOR) B NOTES: 1. DIENSIONING ND TOLERNCING PER NSI Y CONTROLLING DIENSION: INCH. 3. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. 4. RECOENDED BOLT CENTER DIENSION OF 1.16 (29.57) BSED ON 3 SCREW. INCHES ILLIETERS DI IN X IN X B C D E F G BSC BSC H K N Q R S aaa REF REF bbb REF REF ccc REF REF E (FLNGE) C T SETING PLNE CSE 465B-03 ISSUE C NI-880 F STYLE 1: PIN 1. DRIN 2. GTE 3. SOURCE Information in this document is provided solely to enable system and software implementers to use otorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. otorola reserves the right to make changes without further notice to any products herein. otorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does otorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in otorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. otorola does not convey any license under its patent rights nor the rights of others. otorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the otorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use otorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold otorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that otorola was negligent regarding the design or manufacture of the part. OTOROL and the Stylized Logo are registered in the US Patent and Trademark Office. ll other product or service names are the property of their respective owners. otorola, Inc. is an Equal Opportunity/ffirmative ction Employer. otorola Inc HOW TO RECH US: US/EUROPE/LOCTIONS NOT LISTED: JPN: otorola Japan Ltd.; SPS, Technical Information Center, otorola Literature Distribution , inami-zabu, inato-ku, Tokyo , Japan P.O. Box 5405, Denver, Colorado or SI/PCIFIC: otorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong HOE PGE: 12 OTOROL RF DEVICE RF19125/D DT