Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θjc 5.74 C/W

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1 echnical Data Document Number: RF281 Rev. 6, 10/2008 RF Power Field Effect ransistors N- Channel Enhancement- ode Lateral OSFEs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 Hz. Characterized for operation Class and Class at 26 volts in commercial and industrial applications. Specified wo- one 1930 Hz, 26 Volts Output Power 4 Watts PEP Power Gain 11 d Efficiency 30% Intermodulation Distortion - 29 dc Capable of Handling 10:1 26 Vdc, 2000 Hz, 4 Watts CW Output Power Features Excellent hermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters S- Parameter Characterization at High ias Levels RoHS Compliant In ape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. able 1. aximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -0.5, +65 Vdc Gate-Source Voltage V GS ±20 Vdc otal Device C = 25 C Derate above 25 C P D Storage emperature Range stg - 65 to +150 C Case Operating emperature C 150 C Operating Junction emperature J 200 C able 2. hermal Characteristics W W/ C Characteristic Symbol Value Unit hermal Resistance, Junction to Case R θjc 5.74 C/W able 3. Electrical Characteristics ( C = 25 C unless otherwise noted) Characteristic Symbol in yp ax Unit Off Characteristics Drain- Source reakdown Voltage (V GS = 0, I D = 10 μdc) Zero Gate Voltage Drain Current (V DS = 28 Vdc, V GS = 0) Gate- Source Leakage Current (V GS = 20 Vdc, V DS = 0) RF281SR1 RF281ZR Hz, 4 W, 26 V LERL N- CHNNEL RODND RF POWER OSFEs CSE , SYLE 1 NI- 200S RF281SR1 CSE 458C-03, SYLE 1 NI- 200Z RF281ZR1 V (R)DSS Vdc I DSS 10 μdc I GSS 1 μdc NOE - CUION - OS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging OS devices should be observed., Inc., ll rights reserved. 1

2 able 3. Electrical Characteristics ( C = 25 C unless otherwise noted) (continued) Characteristic Symbol in yp ax Unit On Characteristics Gate hreshold Voltage (V DS = 10 Vdc, I D = 20 μdc) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 25 mdc) Drain- Source On- Voltage (V GS = 10 Vdc, I D = 0.1 ) Dynamic Characteristics Input Capacitance (V DS = 26 Vdc, V GS = 0, f = 1.0 Hz) Output Capacitance (V DS = 26 Vdc, V GS = 0, f = 1.0 Hz) Reverse ransfer Capacitance (V DS = 26 Vdc, V GS = 0, f = 1.0 Hz) Functional ests (In Freescale est Fixture) Common- Source mplifier Power Gain (V DD = 26 Vdc, P out = 4 W PEP, I DQ = 25 m, Drain Efficiency (V DD = 26 Vdc, P out = 4 W, I DQ = 25 m, Input Return Loss (V DD = 26 Vdc, P out = 4 W PEP, I DQ = 25 m, Intermodulation Distortion (V DD = 26 Vdc, P out = 4 W PEP, I DQ = 25 m, V GS(th) Vdc V GS(q) Vdc V DS(on) Vdc C iss 5.5 pf C oss 3.3 pf C rss 0.17 pf G ps d η 30 % IRL d ID -31 dc 2

3 f Hz Z in Ω j j j j0.7 Z OL * Ω j j j j11.0 Z in = Complex conjugate of source impedance. Z OL * = j j j j9.2 Input atching Network f = 2000 Hz Z in f = 1500 Hz Z o = 25 Ω V DD = 26 V, I DQ = 25 m, P out = 4 W (PEP) Z OL * Complex conjugate of the optimum load impedance at given output power, voltage, ID, bias current and frequency. Device Under est Z in Z OL * f = 2000 Hz f = 1500 Hz Output atching Network Figure 1. Series Equivalent Input and Output Impedance 3

4 able 4. Common Source S-Parameters at V DS = 26 Vdc, I D = 250 mdc f S 11 S 21 S 12 S 22 GHz S 11 d S 12 S

5 PCKGE DIENSIONS 4X Z 2X K E 2X D bbb N (LID) (INSULOR) 2 1 F R (LID) S (INSULOR) C 3 (FLNGE) NOES: 1. CONROLLING DIENSIONS: INCHES. 2. INERPRE DIENSIONS ND OLERNCES PER SE Y14.5, LL DIENSIONS RE SYERICL OU CENERLINE UNLESS OHERWISE NOED. INCHES ILLIEERS DI IN X IN X C D E F H K N R S Z bbb REF REF REF REF SYLE 1: PIN 1. DRIN 2. GE 3. SOURCE H (FLNGE) SEING PLNE CSE ISSUE E NI-200S RF281SR1 4X Z 2X bbb E D 2 1 N (LID) (INSULOR) 2X K R (LID) C S (INSULOR) H F 3 (FLNGE) Y NOES: 1. CONROLLING DIENSIONS: INCHES. 2. INERPRE DIENSIONS ND OLERNCES PER SE Y14.5, DIENSION H (PCKGE COPLNRIY): HE OO OF LEDS ND REFERENCE PLNE US E COPLNR WIHIN DIENSION H. INCHES ILLIEERS DI IN X IN X C D E F H K N R S Y Z R.020 R.508 bbb.010 REF REF.015 REF REF SYLE 1: PIN 1. DRIN 2. GE 3. SOURCE (FLNGE) SEING PLNE CSE 458C-03 ISSUE E NI-200Z RF281ZR1 5

6 PRODUC DOCUENION Refer to the following documents to aid your design process. Engineering ulletins E212: Using Data Sheet Impedances for RF LDOS Devices he following table summarizes revisions to this document. REVISION HISORY Revision Date Description 6 Oct odified data sheet to reflect RF est Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2, and Product Discontinuance Notification number, PCN13420, adding applicable overlay dded Product Documentation and Revision History, p. 6 6

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