P D Storage Temperature Range T stg to +150 C Case Operating Temperature T C 150 C

Transcription

1 echnical Data RF Power Field Effect ransistors N--Channel Enhancement--ode Lateral OSFEs Designed for W--CD base station applications with frequencies from 20 to 270 Hz. Suitable for D, CD and multicarrier amplifier applications. o be used in Class B for PCN--PCS/cellular radio and WLL applications. ypical 2--carrier W--CD Performance: V DD =28Volts,I DQ = 850 m, P out = 9 Watts vg., f = 22.5 Hz, Channel Bandwidth = 3.84 Hz, PR = % Probability on CCDF. Power Gain 4.5 db Drain Efficiency 26% 0 Hz Offset dbc in 3.84 Hz Channel Bandwidth 5 Hz Offset dbc in 3.84 Hz Channel Bandwidth Capable of Handling 0: 28 Vdc, 240 Hz, 90 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally atched for Ease of Use Qualified Up to a aximum of 32 V DD Operation Integrated ESD Protection Lower hermal Resistance Package Low Gold Plating hickness on Leads, 40μ Nominal. RoHS Compliant In ape and Reel. R3 Suffix = 250 Units per 56 mm, 3 inch Reel. able. aximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +65 Vdc Gate--Source Voltage V GS --0.5, +5 Vdc otal Device C =25 C Derate above 25 C Document Number: RF5S2090H Rev. 3, 0/2008 RF5S2090HR3 RF5S2090HSR Hz, 9 W VG., 28 V 2xW-CD LERL N -CHNNEL RF POWER OSFEs CSE , SYLE NI -780 RF5S2090HR3 CSE , SYLE NI -780S RF5S2090HSR3 P D Storage emperature Range stg to +50 C Case Operating emperature C 50 C W W/ C Operating Junction emperature J 200 C able 2. hermal Characteristics Characteristic Symbol Value (,2) Unit hermal Resistance, Junction to Case Case emperature 80 C, 90 W CW Case emperature 76 C, 9 W CW R θjc C/W. F calculator available at Select Software & ools/development ools/calculators to access F calculators by product. 2. Refer to N955, hermal easurement ethodology of RF Power mplifiers. Go to Select Documentation/pplication Notes -- N955., Inc., 2008, 200. ll rights reserved. RF5S2090HR3 RF5S2090HSR3

2 able 3. ESD Protection Characteristics est Conditions Human Body odel achine odel Charge Device odel Class (inimum) 3 (inimum) C7 (inimum) able 4. Electrical Characteristics ( C =25 C unless otherwise noted) Characteristic Symbol in yp ax Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) I DSS 0 μdc I DSS μdc Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics (DC) Gate hreshold Voltage (V DS =0Vdc,I D = 200 μdc) Gate Quiescent Voltage (V DS =28Vdc,I D = 850 mdc) Drain--Source On--Voltage (V GS =0Vdc,I D =2dc) Forward ransconductance (V DS =0Vdc,I D =2dc) Dynamic Characteristics () Reverse ransfer Capacitance (V DS =28Vdc± 30 Hz, V GS =0Vdc) I GSS μdc V GS(th) Vdc V GS(Q) 3.9 Vdc V DS(on) 0.25 Vdc g fs 5 S C rss.7 pf Functional ests (In Freescale est Fixture, 50 ohm system) V DD =28Vdc,I DQ = 850 m, P out = 9 W vg., f = 22.5 Hz, 2--carrier W--CD, 3.84 Hz Channel Bandwidth Carriers. CPR measured in 3.84 Hz Channel ±5 HzOffset. I3 measured in 3.84 Hz ±0 Hz Offset. PR = % Probability on CCDF. Power Gain G ps db Drain Efficiency η D % Intermodulation Distortion I dbc djacent Channel Power Ratio CPR dbc Input Return Loss IRL db. Part is internally matched both on input and output. RF5S2090HR3 RF5S2090HSR3 2

3 C3 V BIS R R2 C4 R3 C5 C0 C7 C8 R4 W C C2 + C3 V SUPPLY RF INPU C6 Z4 Z Z2 Z3 Z6 Z7 C C4 Z8 C9 DU Z9 Z0 Z3 Z8 Z20 Z Z2 Z5 Z6 Z7 Z9 Z2 C2 C5 Z4 RF OUPU Z5 Z.0856 x icrostrip Z x icrostrip Z x icrostrip Z x 0.06 icrostrip Z x icrostrip Z x 0.06 icrostrip Z x icrostrip Z x icrostrip Z x icrostrip Z6.080 x 0.60 icrostrip Z x 0.76 aper Z x icrostrip Z x 0.60 icrostrip Z x 0.47 icrostrip Z x 0.88 icrostrip Z x icrostrip Z x icrostrip Z x 0.47 icrostrip Z0.076 x icrostrip Z x icrostrip Z x icrostrip PCB rlon GX , 0.03, ε r =2.55 Figure. RF5S2090HR3(HSR3) est Circuit Schematic able 5. RF5S2090HR3(HSR3) est Circuit Component Designations and Values Part Description Part Number anufacturer C 9. pf Chip Capacitor C00B9RC500X C C2 8.2 pf Chip Capacitor C00B8R2C500X C C3 2.0 pf Chip Capacitor C00B2R0B500X C C4, C2 0. μf Chip Capacitors CDR33BX04KYS Kemet C5 5.6 pf Chip Capacitor C00B5R6C500X C C6 5. pf Chip Capacitor C00B5RC500X C C7 7.5 pf Chip Capacitor C00B7R5J500X C C8.2 pf Chip Capacitor C00BR2B500X C C9, C μf Chip Capacitors X C C 000 pf Chip Capacitor C00B02J500X C C3 470 μf, 35 V Electrolytic Capacitor EKE630ELL47K25S Nippon Chemi--Con C4, C Variable Capacitors, Gigatrim 2728SL Johanson R kω, /4 W Chip Resistor CRCW20600FKE Vishay R2 560 kω, /4 W Chip Resistor CRCW FKE Vishay R3, R4 2 Ω, /4 W Chip Resistors CRCW2062R0FKE Vishay W Wire Strap RF5S2090HR3 RF5S2090HSR3 3

4 C3 C5 C7 C8 C3 V GG R R3 C9 C0 C R4 W V DD R2 C4 C6 C2 C4 C CU OU RE Figure 2. RF5S2090HR3(HSR3) est Circuit Component Layout C2 C5 RF5S2090 Rev 5 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/- logo. PCBs may have either otorola or Freescale markings during the transition period. hese changes will have no impact on form, fit or function of the current product. RF5S2090HR3 RF5S2090HSR3 4

5 YPICL CHRCERISICS G ps, POWER GIN (db) INERODULION DISORION (dbc) ID, I DQ = 200 m 000 m 850 m 650 m 450 m Figure Carrier W -CD Broadband Performance V DD = 28 Vdc f = 235 Hz, f2 = 245 Hz wo--one easurement, 0 Hz one Spacing P out, OUPU POWER (WS) PEP 00 Figure 4. wo -one Power Gain versus Output Power 3rd Order 5th Order 7th Order G ps, POWER GIN (db) Figure 6. Intermodulation Distortion Products versus one Spacing 0 V DD =28Vdc,P out = 90 W (PEP), I DQ = 850 m wo--one easurements (f + f2)/2 = Center Frequency of 240 Hz G ps η D IRL I3 6 CPR WO--ONE SPCING (Hz) V DD =28Vdc,P out =9W(vg.),I DQ = 850 m 2--Carrier W--CD, 0 Hz Carrier Spacing 3.84 Hz Channel Bandwidth, PR = % Probability(CCDF) f, FREQUENCY (Hz) 260 ID,HIRD ORDER INERODULION DISORION (dbc) P out, OUPU POWER (dbm) V DD =28Vdc f = 235 Hz, f2 = 245 Hz wo--one easurement, 0 Hz one Spacing m η D, DRIN EFFICIENCY (%) I3 (dbc), CPR (dbc) I DQ = 450 m m 850 m P out, OUPU POWER (WS) PEP 00 Figure 5. 3rd Order Intermodulation Distortion versus Output Power P3dB = 5.7 dbm (30.9 W) PdB = dbm (.4 W) INPU REURN LOSS (db) IRL, P in, INPU POWER (dbm) Ideal 000 m ctual V DD =28Vdc,I DQ = 850 m Pulsed CW, 8 μsec(on), msec(off) f = 240 Hz Figure 7. Pulse CW Output Power versus Input Power 42 RF5S2090HR3 RF5S2090HSR3 5

6 YPICL CHRCERISICS η D, DRIN EFFICIENCY (%), G ps, POWER GIN (db) V DD =28Vdc,I DQ = 850 m, f = 235 Hz, 35 f2 = 245 Hz, 2 x W--CD, Hz Bandwidth, PR = 8.5 db 0.0% Probability(CCDF) η D G ps I3 CPR P out, POWER (WS) W--CD 0. Figure Carrier W -CD CPR, I3, Power Gain and Drain Efficiency versus Output Power 0.0 W--CD. CPR easured in 3.84 Hz Channel ±5 Hz Offset. I3 easured in Hz ±0 Hz Offset. PR = % Probability on CCDF PEK--O--VERGE (db) Figure 0. CCDF W -CD 3GPP, est odel, 64 DPCH, 67% Clipping, Single Carrier est Signal --45 I3 (dbc), CPR (dbc) F FCOR (HOURS x PS 2 ) W -CD ES SIGNL (db) J, JUNCION EPERURE ( C) Figure 9. F Factor versus Junction emperature his above graph displays calculated F in hours x ampere 2 drain current. Life tests at elevated temperatures have correlated to better than ±0% of the theoretical prediction for metal failure. Divide F factor by I D 2 for F in a particular application. --CPR in 3.84 Hz BW 3.84 Hz Channel BW +CPR in 3.84 Hz BW --I3 in +I3 in Hz BW 3.84 Hz BW f, FREQUENCY (Hz) Figure. 2-Carrier W-CD Spectrum 220 RF5S2090HR3 RF5S2090HSR3 6

7 f = 2200 Hz Z load f = 200 Hz Z o =0Ω f Hz f = 2200 Hz Z source Ω Z source j j j4.4 f = 200 Hz V DD =28Vdc,I DQ = 850 m, P out =9Wvg. Z load Ω j j j j j.6 Z source = est circuit impedance as measured from gate to ground. Z load = est circuit impedance as measured from drain to ground. Input atching Network Device Under est Output atching Network Z source Z load Figure 2. Series Equivalent Source and Load Impedance RF5S2090HR3 RF5S2090HSR3 7

8 PCKGE DIENSIONS H E B B (FLNGE) 4X U (FLNGE) H B B (FLNGE) E bbb bbb G D 2 (FLNGE) D 2 (FLNGE) B 2X K B 3 3 K bbb C 2X (INSULOR) N (LID) ccc C 4X Z (LID) N (LID) ccc SEING PLNE Q bbb SEING PLNE (INSULOR) bbb B B B ccc aaa CSE ISSUE G NI -780 RF5S2090HR3 B B ccc aaa CSE ISSUE H NI -780S RF5S2090HSR3 R (LID) S B (INSULOR) B R (LID) B F F S (INSULOR) B NOES:. DIENSIONING ND OLERNCING PER NSI Y CONROLLING DIENSION: INCH. 3. DELEED 4. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. INCHES ILLIEERS DI IN X IN X B C D E F G.00 BSC BSC H K N Q R S aaa REF 0.27 REF bbb 0.00 REF REF ccc 0.05 REF 0.38 REF SYLE : PIN. DRIN 2. GE 3. SOURCE NOES:. DIENSIONING ND OLERNCING PER NSI Y CONROLLING DIENSION: INCH. 3. DELEED 4. DIENSION H IS ESURED (0.762) WY FRO PCKGE BODY. INCHES ILLIEERS DI IN X IN X B C D E F H K N R S U Z aaa REF 0.27 REF bbb 0.00 REF REF ccc 0.05 REF 0.38 REF SYLE : PIN. DRIN 2. GE 5. SOURCE RF5S2090HR3 RF5S2090HSR3 8

9 PRODUC DOCUENION Refer to the following documents to aid your design process. pplication Notes N955: hermal easurement ethodology of RF Power mplifiers Engineering Bulletins EB22: Using Data Sheet Impedances for RF LDOS Devices REVISION HISORY he following table summarizes revisions to this document. Revision Date Description 3 Oct odified data sheet to reflect RF est Reduction described in Product and Process Change Notification number, PCN2779, p., 2 Updated Part Numbers in able 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 dded Product Documentation and Revision History, p. 9 Dec. 200 Data sheet archived. Parts no longer manufactured. RF5S2090HR3 RF5S2090HSR3 9

10 How to Reach Us: Home Page: Web Support: US/Europe or Locations Not Listed:, Inc. echnical Information Center, EL East Elliot Road empe, rizona or Europe, iddle East, and frica: Freescale Halbleiter Deutschland GmbH echnical Information Center Schatzbogen uenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters RCO ower 5F --8--, Shimo--eguro, eguro--ku, okyo Japan or support.japan@freescale.com sia/pacific: China Ltd. Exchange Building 23F No. 8 Jianguo Road Chaoyang District Beijing China support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. here are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ypical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including ypicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of, Inc. ll other product or service names are the property of their respective owners., Inc. 2008, 200. ll rights reserved. RF5S2090HR3 RF5S2090HSR3 Document Number: RF5S2090H 0 Rev. 3, 0/2008