Potential of SiC for Automotive Power Electronics. Departement Vehicle Electronics Fraunhofer IISB Page 1

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1 Potetial of SiC for Automotive Power Electroics Frauhofer IISB Page 1

2 Overview Gai power desity by SiC Coverter #1: Most compact full SiC power electroic Coverter #2: Idustrial style SiC coverter Iverters: Stadaloe ad modular Wheel Hub type Techical treds i SiC developmet Optimizig towards more curret Impact o switchig losses Example ad impact of parasitic capacitace Solutio for ewest ad future SiC devices Shift to resoat coverters Bus bar module Usig Si-RC Subbers Frauhofer IISB Page 2

3 Gai Power Desity by WBG Galvaic coupled bidirectioal DC-DC coverters 143 kw/dm³ 2014: Full SiC Mosfet ad Ceramic Lik % Gai power ad power desity by compoet itegratio ad ewest compoet techology Wide Bad Gap ad high voltage for todays ad future DC-DC Coverters 2010: Full Uipolar Mosfet Desig 2004: High Speed IGBT3 2013: GaN Test Coverter 2007: IGBT3 ad SiC Diodes 100 kw/dm³ 99 % 40 kw/dm³ 98 % 70 5 kw/dm³ Frauhofer IISB kw/dm³ Page 3

4 Gai Power Desity by WBG Full SiC techology i idustrial style Coverters up to 60 kw / dm³ From 30 A to > 800 A 900 V high side 3 to 12 phases Serial productio devices Chips i module techology Directly attached drivers Ceramic subbers, Film capacitors Full IP6k9k housig EMV Filter (CAN, Aux) Full Voltage ad Curret Cotrol Loop CAN commuicatio Temperature depedig deratig Overload limits Adaptable cotrol loop parameters Frauhofer IISB Page 4

5 Gai Power Desity by WBG Full SiC Drive Iverter for High Speed Motor Drives Max. Power 60 kw (at 900 V DC ) Iput Voltage Rage Switchig Frequecy Dimesio of Power Stage Volume Topology Techology 30 kw (at 450 V DC ) 900 V DC to 200 V DC up to 100 khz ~ 150x70x35 mm3 ~ 0,37 l 3 Phase B6 2x 1200 V SiC Mosfets Cree Ge2 25mΩ per switch Power Desity up to 160 kw/dm³ 3x Frauhofer IISB Page 5

6 Gai Power Desity by WBG Modular 1200V SiC iverter for commercial vehicles Maximumpower ratig Maximum operatig voltage 290 kva 800 V Cotiuous phase curret 300 A RMS T fluid ilet 60 C T j(max) 175 C Frauhofer IISB Page 6

7 Techical Treds i SiC Iovative Modul Desig Full Bridge - Busbar SiC-Modul Techologies Chip o Busbar AC Gate Double Side Silver Siterig Module Data max. 80A / 600V (1200V) SiC-FETs Silicium Puls Capacitors Ultra Low Iductace Gate DC Cocept Modular: H-/Half Bridge Double Side Coolig Small Dimesios Frauhofer IISB Page 7

8 Techical Treds i SiC Iovative Module Desig Full bridge - bus bar SiC-Module DC+ Glue SiC-FET AC Gate Glue Si-Capacitor Gate DC- Cooler Adhesive film Frauhofer IISB Page 8

9 Outlook to faster SiC Modules Iovative Modul Desig Full Bridge - Busbar SiC-Module Commutatio Cell Ultra Low Module Iductace Iductivity [H] L < 1H (@>1MHz) à Fast Switchig ad low Voltage Overshoot Plaar 80A module 2 SiC-busbar 0 module 1.E+00 1.E+02 1.E+04 1.E+06 1.E+08 1.E+10 Switchig frequecy [Hz] Frauhofer IISB Page 9

10 Outlook to faster SiC Modules Parasitic termial iductace leads to oscillatio ad overvoltage o SiC Chips Voltage overshoot by large currets ad fast tur-off Voltage overshoot, huge tur o losses ad oscillatio o fast tur-o Both problems ca be reduced, part wise elimiated, by usig a Si-RC elemet. Subber elemet is located directly ext to power chips Dampig is high eough to elimiate rigig iside ad outside of the Module Key Feature: Si-RC ca do very high power compared to SMD parts or similar devices (about x100!) Frauhofer IISB Page 10

11 Outlook to faster SiC Modules Buck Test - High speed tur off High voltage overshoot Massive rigig With Si-RC Well limited overshoot Very small Rigig Oly a fractio of classic tur-off losses Low-R gate Top Switch U(DS) SiRC, 0.3mJ Classic, 2.2 mj Further Iformatio: Wolfspeed, desig_cosideratios_for_desigig_with_cree_sic_modules_part_1_uderstadig_the_effects_of_parasitic_iductace.pdf Frauhofer IISB Page 11

12 Power electroics for aerospace Bild:esa Project Example: System itegrated of 3,3 V to 12 kv DC/DC coverters for FEEP thrusters i cupesat applicatios 4 idepedet system itegrated, highly efficiet 3,3 V to 12 kv (3W) DC/DC coverters Proposed DC/DC System Cocept: Picture Source: D. Bock, A. Kramer, P. Bagert, K. Schillig, M. Tajmar, NaoFEEP o UWE platform - Formatio Flyig of CubeSats usig Miiaturized Field Emissio Electric Propulsio Thrusters, Joit Coferece 30th ISTS, 34th IEPC, ad 6th NSAT, Kobe, Japa, 2015 Picture Source: D. Bock, M. Bethge ad M. Tajmar, Istitute of Aerospace Egieerig, Techische Uiversität Dresde, HIGHLY MINIATURIZED FEEP THRUSTERS FOR CUBESAT APPLICATIONS Frauhofer IISB Page 12

13 All / Full Electric Aircraft Target: eergy savigs of 25 to 50% NOx reductio 80%, oise 50% 80 passeger drivig power 1 to 20 MW Bild:NASA Frauhofer IISB Page 13

14 Google little box Target: 2kW iverter for photovoltaics 900V SiC switches 100kHz clock frequecy Efficiecy < 96% Power desity 200 W/i 3 Bild:NASA Frauhofer IISB Page 14

15 Outlook 3.3kV tractio 4.5kV tractio, wid power 6.5kV tractio, grid, e-aircraft 6.5kV bipolar grid 10 20kV BiFET/IGBT grid > 20kV grid Compesatio devices (6.5 20kV) Wafer thiig Backside processig 200mm Frauhofer IISB Page 15

16 Questios ad Discussio Frauhofer IISB Page 16

17 Techical Treds i SiC 1.20 Relative Cost of SiC MOSFET Released $5/A 1 Uit Price $2.50/A 1 Uit Price $0.75/A 1 Uit Price $0.18/A Possible i Volume Source: Cree / ist.gov E+03 1E+04 1E+05 1E+06 1E+07 1E+08 Number of SiC MOSFETs Produced Frauhofer IISB Page 17

18 Frauhofer IISB Page 18