RAD Hard HEXFET TECHNOLOGY

Transcription

1 PD-9889E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM915 JANSR2N7422 V, P-CHANNEL REF: MIL-PRF-195/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiatio Level RDS(o) ID QPL Part Number IRHM915 K Rads (Si).8Ω -22A JANSR2N7422 IRHM9315 3K Rads (Si).8Ω -22A JANSF2N7422 TO-254AA Iteratioal Rectifier s RADHard HEXFET TM techology provides high performace power MOSFETs for space applicatios. This techology has over a decade of prove performace ad reliability i satellite applicatios. These devices have bee characterized for both Total Dose ad Sigle Evet Effects (SEE). The combiatio of low Rdso ad low gate charge reduces the power losses i switchig applicatios such as DC to DC coverters ad motor cotrol. These devices retai all of the well established advatages of MOSFETs such as voltage cotrol, fast switchig, ease of parallelig ad temperature Absolute Maximum Ratigs Features: Sigle Evet Effect (SEE) Hardeed Parameter VGS = -12V, TC = 25 C Cotiuous Drai Curret -22 VGS = -12V, TC = C Cotiuous Drai Curret -14 IDM Pulsed Drai Curret À -88 Pre-Irradiatio Uits TC = 25 C Max. Power Dissipatio 15 W Liear Deratig Factor 1.2 W/ C VGS Gate-to-Source Voltage ±2 V EAS Sigle Pulse Avalache Eergy Á 5 mj IAR Avalache Curret À -22 A EAR Repetitive Avalache Eergy À 15 mj dv/dt Peak Diode Recovery dv/dt  -23 V/s TJ Operatig Juctio -55 to 15 TSTG Storage Temperature Rage C Low RDS(o) Low Total Gate Charge Proto Tolerat Simple Drive Requiremets Ease of Parallelig Hermetically Sealed Surface Mout Ceramic Package Light Weight ESD Ratig: Class 2 per MIL-STD-75, Method 12 Lead Temperature 3 (.63 i. (1.6mm) from case for 1s) Weight 9.3 (typical) g A For foototes refer to the last page 1 5/13/14

2 IRHM915, JANSR2N7422 Pre-Irradiatio Electrical Tj = 25 C (Uless Otherwise Specified) Parameter Mi Typ Max Uits Test Coditios BVDSS Drai-to-Source Breakdow Voltage V VGS = V, ID =-1.mA BVDSS/ TJ Temperature Coefficiet of Breakdow -.93 V/ C Referece to 25 C, ID = -1.mA Voltage RDS(o) Static Drai-to-Source O-State.8 VGS = -12V, ID = -14AÃ Resistace.85 Ω VGS = -12V, ID = -22AÃ VGS(th) Gate Threshold Voltage V VDS = VGS, ID = -1.mA gfs Forward Trascoductace 11 S VDS = -15V, IDS = -14A Ã IDSS Zero Gate Voltage Drai Curret -25 VDS = -8V,VGS=V µa -25 VDS = -8V, VGS = V, TJ = 125 C IGSS Gate-to-Source Leakage Forward VGS = -2V A IGSS Gate-to-Source Leakage Reverse VGS = 2V Qg Total Gate Charge 2 VGS = -12V, ID = -22A Qgs Gate-to-Source Charge 35 C VDS = -5V Qgd Gate-to-Drai ( Miller ) Charge 48 td(o) Tur-O Delay Time 4 VDD = -5V, ID = -22A, tr Rise Time 17 VGS =-12V, RG = 2.35Ω s td(off) Tur-Off Delay Time 19 tf Fall Time 19 LS + LD Total Iductace 6.8 H Measured from drai lead (6mm/.25i. from package) to source lead (6mm/.25i. from package) Ciss Iput Capacitace 43 VGS = V, VDS = -25V Coss Output Capacitace 1 pf f = 1.MHz Crss Reverse Trasfer Capacitace 31 Source-Drai Diode Ratigs ad Characteristics Parameter Mi Typ Max Uits Test Coditios IS Cotiuous Source Curret (Body Diode) -22 ISM Pulse Source Curret (Body Diode) À -88 A VSD Diode Forward Voltage -3. V Tj = 25 C, IS = -22A, VGS = V Ã trr Reverse Recovery Time 3 s Tj = 25 C, IF = -22A, di/dt A/µs QRR Reverse Recovery Charge 1.5 µc VDD -5V Ã to Forward Tur-O Time Itrisic tur-o time is egligible. Tur-o speed is substatially cotrolled by LS + LD. Thermal Resistace Parameter Mi Typ Max Uits Test Coditios RthJC Juctio-to-Case.83 RthJA Juctio-to-Ambiet 48 C/W Typical socket mout RthCS Case-to-Sik.21 Note: Correspodig Spice ad Saber models are available o Iteratioal Rectifier Web site. For foototes refer to the last page 2

3 Pre-Irradiatio Radiatio Characteristics IRHM915, JANSR2N7422 Iteratioal Rectifier Radiatio Hardeed MOSFETs are tested to verify their radiatio hardess capability. The hardess assurace program at Iteratioal Rectifier is comprised of two radiatio eviromets. Every maufacturig lot is tested for total ioizig dose (per otes 5 ad 6) usig the TO-3 package. Both pre- ad post-irradiatio performace are tested ad specified usig the same drive circuitry ad test coditios i order to provide a direct compariso. Table 1. Electrical Tj = 25 C, Post Total Dose Irradiatio ÄÅ Parameter K Rads(Si) 1 3K Rads (Si) 2 Uits Test Coditios Mi Max Mi Max BV DSS Drai-to-Source Breakdow Voltage V V GS = V, I D = -1.mA VGS(th) Gate Threshold Voltage VGS = V DS, I D = -1.mA I GSS Gate-to-Source Leakage Forward A V GS = -2V I GSS Gate-to-Source Leakage Reverse V GS = 2V I DSS Zero Gate Voltage Drai Curret µa V DS = -8V, V GS = V R DS(o) Static Drai-to-Source Ã.8.8 Ω VGS = -12V, I D =-14A O-State Resistace (TO-3) R DS(o) Static Drai-to-Source Ã.8.8 Ω VGS = -12V, I D = -14A O-State Resistace (TO-254) V SD Diode Forward Voltage à V V GS = V, IS = -22A 1. Part umber IRHM915 (JANSR2N7422) 2. Part umber IRHM9315 (JANSF2N7422) Iteratioal Rectifier radiatio hardeed MOSFETs have bee characterized i heavy io eviromet for Sigle Evet Effects (SEE). Sigle Evet Effects characterizatio is illustrated i Fig. a ad Table 2. Table 2. Typical Sigle Evet Effect Safe Operatig Area Io LET MeV/(mg/cm²)) Eergy (MeV) Rage VGS=5V Cu Br I VDS Cu Br I VGS Fig a. Typical Sigle Evet Effect, Safe Operatig Area For foototes refer to the last page 3

4 IRHM915, JANSR2N7422 Pre-Irradiatio -I D, Drai-to-Source Curret (A) VGS TOP -15V -12V -1V -9.V -8.V -7.V -6.V BOTTOM -5.V -5.V 2µs PULSE WIDTH 1 T J = 25 C 1 1 -V DS, Drai-to-Source Voltage (V) -I D, Drai-to-Source Curret (A) VGS TOP -15V -12V -1V -9.V -8.V -7.V -6.V BOTTOM -5.V -5.V 2µs PULSE WIDTH 1 T J = 15 C 1 1 -V DS, Drai-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drai-to-Source Curret (A) - T J = 25 C T J = 15 C V DS= -5V 2µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(o), Drai-to-Source O Resistace (Normalized) 3. I D = -22A V GS = -12V T J, Juctio Temperature ( C) Fig 3. Typical Trasfer Characteristics Fig 4. Normalized O-Resistace Vs. Temperature 4

5 -I D, Drai-to-Source Curret (A) Pre-Irradiatio IRHM915, JANSR2N7422 C, Capacitace (pf) 7 VGS = V, f = 1MHz Ciss = Cgs + Cgd, C ds SHORTED 6 Crss = Cgd Coss = Cds + Cgd 5 C iss C oss C rss 1 1 -V DS, Drai-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = D -22A V DS =-8V V DS =-5V V DS =-2V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (C) Fig 5. Typical Capacitace Vs. Drai-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drai Curret (A) 1 T J = 15 C T J = 25 C V GS = V V SD,Source-to-Drai Voltage (V) Tc = 25 C Tj = 15 C Sigle Pulse OPERATION IN THIS AREA LIMITED BY R DS (o) µs 1ms 1ms DC 1 1 -V DS, Drai-to-Source Voltage (V) Fig 7. Typical Source-Drai Diode Forward Voltage Fig 8. Maximum Safe Operatig Area 5

6 IRHM915, JANSR2N7422 Pre-Irradiatio 24 V DS R D -I D, Drai Curret (A) R G V GS V GS Pulse Width 1 µs Duty Factor.1 % D.U.T. Fig 1a. Switchig Time Test Circuit + - V DD T C, Case Temperature ( C) Fig 9. Maximum Drai Curret Vs. Case Temperature t d(o) t r t d(off) t f 1% 9% V DS Fig 1b. Switchig Time Waveforms 1 D =.5 Thermal Respose (Z thjc ) SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J= P DM x Z thjc + TC t 1, Rectagular Pulse Duratio (sec) PDM Fig 11. Maximum Effective Trasiet Thermal Impedace, Juctio-to-Case t1 t2 6

7 Pre-Irradiatio IRHM915, JANSR2N7422 Fig 12a. Uclamped Iductive Test Circuit I AS V DS L R G D.U.T V DD I AS A -2V V GS DRIVER tp.1ω 15V E AS, Sigle Pulse Avalache Eergy (mj) TOP BOTTOM I D -9.8A -14A -22A Startig T, Juctio Temperature ( J C) Fig 12c. Maximum Avalache Eergy Vs. Drai Curret tp V (BR)DSS Fig 12b. Uclamped Iductive Waveforms Curret Regulator Same Type as D.U.T. -12V Q G -12V.2µF 5KΩ.3µF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Curret Samplig Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 7

8 IRHM915, JANSR2N7422 Foototes: À Repetitive Ratig; Pulse width limited by maximum juctio temperature. Á VDD = -25V, startig TJ = 25 C, L =2.1mH Peak IL = -22A, VGS =-12V  ISD -22A, di/dt -45A/µs, VDD V, TJ 15 C Case Outlie ad Dimesios TO-254AA Pre-Irradiatio à Pulse width 3 µs; Duty Cycle 2% Ä Total Dose Irradiatio with VGS Bias. -12 volt VGS applied ad VDS = durig irradiatio per MIL-STD-75, method 119, coditio A. Å Total Dose Irradiatio with VDS Bias. -8 volt VDS applied ad VGS = durig irradiatio per MlL-STD-75, method 119, coditio A [.149] 3.53 [.139] A [.545] [.535] 6.6 [.26] 6.32 [.249].12 [.5] 1.27 [.5] 1.2 [.4] 17.4 [.685] [.665] 2.32 [.8] 2.7 [.79] [.545] [.535] B C [.57] [.51].84 [.33] MAX [.15] 2X 3X 1.14 [.45].89 [.35].36 [.14] B A 3.81 [.15] NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-195 Package cotaiig beryllia shall ot be groud, sadblasted, machied, or have other operatios performed o them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall ot be placed i acids that will produce fumes cotaiig beryllium. IR WORLD HEADQUARTERS: 11 N. Sepulveda Blvd., El Segudo, Califoria 9245, USA Tel: (31) IR LEOMINSTER : 25 Crawford St., Leomister, Massachusetts 1453, USA Tel: (978) TAC Fax: (31) Visit us at for sales cotact iformatio. Data ad specificatios subject to chage without otice. 5/