IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261

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1 PD B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHF7130 IRHF8130 JANSR2N7261 JANSH2N Volt, 0.18Ω, MEGA RAD HARD HEXFET Iteratioal Rectifier s RAD HARD techology HEXFETs demostrate excellet threshold voltage stability ad breakdow voltage stability at total radiaitio doses as high as 1x10 6 Rads(Si). Uder idetical pre- ad post-irradiatio test coditios, Iteratioal Rectifier s RAD HARD HEXFETs retai idetical electrical specificatios up to 1 x 10 5 Rads (Si) total dose. No compesatio i gate drive circuitry is required. These devices are also capable of survivig trasiet ioizatio pulses as high as 1 x Rads (Si)/Sec, ad retur to ormal operatio withi a few microsecods. Sice the RAD HARD process utilizes Iteratioal Rectifier s pateted HEXFET techology, the user ca expect the highest quality ad reliability i the idustry. RAD HARD HEXFET trasistors also feature all of the well-established advatages of MOSFETs, such as voltage cotrol, very fast switchig, ease of parallelig ad temperature stability of the electrical parameters. They are well-suited for applicatios such as switchig power supplies, motor cotrols, iverters, choppers, audio amplifiers ad high-eergy pulse circuits i space ad weapos eviromets. Product Summary Absolute Maximum Ratigs Parameter IRHF7130, IRHF8130 Uits VGS = 12V, TC = 25 C Cotiuous Drai Curret 8.0 VGS = 12V, TC = 100 C Cotiuous Drai Curret 5.0 IDM Pulsed Drai Curret 32 Part Number BVDSS RDS(o) ID IRHF V 0.18Ω 8.0A IRHF V 0.18Ω 8.0A Features: N CHANNEL MEGA RAD HARD Radiatio Hardeed up to 1 x 10 6 Rads (Si) Sigle Evet Burout (SEB) Hardeed Sigle Evet Gate Rupture (SEGR) Hardeed Gamma Dot (Flash X-Ray) Hardeed Neutro Tolerat Idetical Pre- ad Post-Electrical Test Coditios Repetitive Avalache Ratig Dyamic dv/dt Ratig Simple Drive Requiremets Ease of Parallelig Hermetically Sealed TC = 25 C Max. Power Dissipatio 25 W Liear Deratig Factor 0.20 W/ C VGS Gate-to-Source Voltage ±20 V EAS Sigle Pulse Avalache Eergy ƒ 130 mj dv/dt Peak Diode Recovery dv/dt 5.5 V/s TJ Operatig Juctio -55 to 150 TSTG Storage Temperature Rage o C Lead Temperature 300 (0.063 i. (1.6mm) from case for 10s) Weight 0.98 (typical) g A 1 Dowloaded from Elcodis.com electroic compoets distributor 10/14/98

2 Electrical Tj = 25 C (Uless Otherwise Specified) Parameter Mi Typ Max Uits Test Coditios BVDSS Drai-to-Source Breakdow Voltage 100 V VGS = 0V, ID = 1.0mA BVDSS/ TJ Temperature Coefficiet of Breakdow 0.10 V/ C Referece to 25 C, ID = 1.0mA Voltage RDS(o) Static Drai-to-Source O-State 0.18 VGS = 12V, ID = 5.0A Ω Resistace VGS = 12V, ID = 8.0A VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 1.0mA gfs Forward Trascoductace 2.5 S ( ) VDS > 15V, IDS = 5.0A IDSS Zero Gate Voltage Drai Curret 25 VDS= 0.8 x Max Ratig,VGS=0V µa 250 VDS = 0.8 x Max Ratig VGS = 0V, TJ = 125 C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V A IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge 50 VGS =12V, ID = 8.0A Qgs Gate-to-Source Charge 12 C VDS = Max Ratig x 0.5 Qgd Gate-to-Drai ( Miller ) Charge 20 td(o) Tur-O Delay Time 25 VDD = 50V, ID = 8.0A, tr Rise Time 55 RG = 7.5Ω s td(off) Tur-Off Delay Time 55 tf Fall Time 45 LD Iteral Drai Iductace 5.0 LS Iteral Source Iductace 15 Ciss Iput Capacitace 1100 VGS = 0V, VDS = 25V Coss Output Capacitace 310 pf f = 1.0MHz Crss Reverse Trasfer Capacitace 55 Source-Drai Diode Ratigs ad Characteristics H Ω Measured from drai lead, 6mm (0.25 i) from package to ceter of die. Measured from source lead, 6mm (0.25 i) from package to source bodig pad. Parameter Mi Typ Max Uits Test Coditios IS Cotiuous Source Curret (Body Diode) 8.0 ISM Pulse Source Curret (Body Diode) 32 Modified MOSFET symbol showig the iteral iductaces. VSD Diode Forward Voltage 1.5 V Tj = 25 C, IS = 8.0A, VGS = 0V trr Reverse Recovery Time 350 s Tj = 25 C, IF = 8.0A, di/dt 100A/µs QRR Reverse Recovery Charge 3.0 µc VDD 50V to Forward Tur-O Time Itrisic tur-o time is egligible. Tur-o speed is substatially cotrolled by LS + LD. Thermal Resistace A Modified MOSFET symbol showig the itegral reverse p- juctio rectifier. Parameter Mi Typ Max Uits Test Coditios RthJC Juctio-to-Case 5.0 C/W Rth-JA Juctio-to-Ambiet 175 Typical socket mout 2 Dowloaded from Elcodis.com electroic compoets distributor

3 Radiatio Characteristics Radiatio Performace of Rad Hard HEXFETs Iteratioal Rectifier Radiatio Hardeed HEXFETs are tested to verify their hardess capability. The hardess assurace program at Iteratioal Rectifier comprises three radiatio eviromets. Every maufacturig lot is tested i a low dose rate (total dose) eviromet per MIL-STD-750, test method 1019 coditio A. Iteratioal Rectifier has imposed a stadard gate coditio of 12 volts per ote 5 ad a V DS bias coditio equal to 80% of the device rated voltage per ote 6. Pre- ad post- irradiatio limits of the devices irradiated to 1 x 10 5 Rads (Si) are idetical ad are preseted i Table 1, colum 1, IRHF7130. Post-irradiatio limits of the devices irradiated to 1 x 10 6 Rads (Si) are preseted i Table IRHF7130, IRHF8130, JANSR-,JANSH-,2N7261 Devices 1, colum 2, IRHF8130. The values i Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- ad post-irradiatio performace are tested ad specified usig the same drive circuitry ad test coditios i order to provide a direct compariso. High dose rate testig may be doe o a special request basis usig a dose rate up to 1 x Rads (Si)/Sec (See Table 2) Iteratioal Rectifier radiatio hardeed HEXFETs have bee characterized i heavy io Sigle Evet Effects (SEE) eviromets. Sigle Evet Effects characterizatio is show i Table 3. Table 1. Low Dose Rate IRHF7130 IRHF8130 Parameter 100K Rads (Si) 1000K Rads (Si) Uits Test Coditios Mi Max Mi Max BV DSS Drai-to-Source Breakdow Voltage V V GS = 0V, I D = 1.0mA VGS(th) Gate Threshold Voltage VGS = V DS, I D = 1.0mA I GSS Gate-to-Source Leakage Forward A V GS = 20V I GSS Gate-to-Source Leakage Reverse V GS = -20 V I DSS Zero Gate Voltage Drai Curret µa V DS =0.8 x Max Ratig, V GS =0V R DS(o)1 Static Drai-to-Source Ω VGS = 12V, I D = 5.0A O-State Resistace Oe V SD Diode Forward Voltage V TC = 25 C, IS =8.0A,V GS = 0V Table 2. High Dose Rate ˆ Rads (Si)/sec Rads (Si)/sec Parameter Mi Typ Max Mi Typ Max Uits Test Coditios V DSS Drai-to-Source Voltage V Applied drai-to-source voltage durig gamma-dot IPP A Peak radiatio iduced photo-curret di/dt A/µsec Rate of rise of photo-curret L µh Circuit iductace required to limit di/dt Table 3. Sigle Evet Effects LET (Si) Fluece Rage V DS Bias V GS Bias Io (MeV/mg/cm 2 ) (ios/cm 2 ) (µm) (V) (V) Cu 28 3x 10 5 ~ Dowloaded from Elcodis.com electroic compoets distributor

4 Post-Irradiatio Fig 1. Typical Respose of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 2. Typical Respose of O-State Resistace Vs. Total Dose Exposure Fig 3. Typical Respose of Trascoductace Vs. Total Dose Exposure Fig 4. Typical Respose of Drai to Source Breakdow Vs. Total Dose Exposure 4 Dowloaded from Elcodis.com electroic compoets distributor

5 Post-Irradiatio Fig 5. Typical Zero Gate Voltage Drai Curret Vs. Total Dose Exposure Fig 6. Typical O-State Resistace Vs. Neutro Fluece Level Fig 8a. Gate Stress of V GSS Equals 12 Volts Durig Radiatio Fig 7. Typical Trasiet Respose of Rad Hard HEXFET Durig 1x10 12 Rad (Si)/Sec Exposure Fig 8b. V DSS Stress Equals 80% of B VDSS Durig Radiatio Fig 9. High Dose Rate (Gamma Dot) Test Circuit 5 Dowloaded from Elcodis.com electroic compoets distributor

6 IRHF7130, IRHF8130, JANSR-,JANSH-,2N7261 Devices Note: Bias Coditios durig radiatio: VGS = 12 Vdc, VDS = 0 Vdc Radiatio Characterstics Fig 10. Typical Output Characteristics Fig 11. Typical Output Characteristics Post-Irradiatio 100K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiatio 300K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiatio 1 Mega Rads(Si) 6 Dowloaded from Elcodis.com electroic compoets distributor

7 Radiatio Characterstics IRHF7130, IRHF8130, JANSR-,JANSH-,2N7261 Devices Note: Bias Coditios durig radiatio: VGS = 0 Vdc, VDS = 80 Vdc Fig 14. Typical Output Characteristics Fig 15. Typical Output Characteristics Post-Irradiatio 100K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiatio 300K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiatio 1 Mega Rads(Si) 7 Dowloaded from Elcodis.com electroic compoets distributor

8 Fig 18. Typical Output Characteristics Fig 19. Typical Output Characteristics Fig 20. Typical Trasfer Characteristics Fig 21. Normalized O-Resistace Vs. Temperature 8 Dowloaded from Elcodis.com electroic compoets distributor

9 30 Fig 22. Typical Capacitace Vs. Drai-to-Source Voltage Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 24. Typical Source-Drai Diode Forward Voltage Fig 25. Maximum Safe Operatig Area 9 Dowloaded from Elcodis.com electroic compoets distributor

10 V DS R D R G V GS D.U.T. + - V DD 12V Pulse Width 1 µs Duty Factor 0.1 % Fig 27a. Switchig Time Test Circuit V DS 90% Fig 26. Maximum Drai Curret Vs. Case Temperature 10% V GS t d(o) t r t d(off) t f Fig 27b. Switchig Time Waveforms Fig 28. Maximum Effective Trasiet Thermal Impedace, Juctio-to-Case 10 Dowloaded from Elcodis.com electroic compoets distributor

11 15V V DS L DRIVER R G 12V 20V tp D.U.T I AS 0.01Ω + - V DD A Fig 29a. Uclamped Iductive Test Circuit tp V (BR)DSS Fig 29c. Maximum Avalache Eergy Vs. Drai Curret I AS Fig 29b. Uclamped Iductive Waveforms Curret Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF 12 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Curret Samplig Resistors Fig30a. Basic Gate Charge Waveform Fig 30b. Gate Charge Test Circuit 11 Dowloaded from Elcodis.com electroic compoets distributor

12 See Figures 18 through 30 for pre-radiatio curves Repetitive Ratig; Pulse width limited by maximum juctio temperature. Refer to curret HEXFET reliability report. ƒ VDD = 25V, Startig TJ = 25 C, Peak IL = 8.0A,L>3.0mH RG=25Ω ISD 8.0A, di/dt 140A/µs, VDD BVDSS, TJ 150 C Suggested RG =7.5Ω Pulse width 300 µs; Duty Cycle 2% Total Dose Irradiatio with VGS Bias. 12 volt VGS applied ad VDS = 0 durig irradiatio per MIL-STD-750, method 1019, coditio A. Total Dose Irradiatio with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiatio) applied ad VGS = 0 durig irradiatio per MlL-STD-750, method 1019, coditio A. ˆ This test is performed usig a flash x-ray source operated i the e-beam mode (eergy ~2.5 MeV), 30 sec pulse. All ad Post-Irradiatio test coditios are idetical to facilitate direct compariso for circuit applicatios. Case Outlie ad Dimesios TO-205AF (Modified TO-39) All dimesios are show millimeters (iches) WORLD HEADQUARTERS: 233 Kasas St., El Segudo, Califoria 90245, Tel: (310) IR GREAT BRITAIN: Hurst Gree, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 15 Licol Court, Brampto, Otario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: IR ITALY: Via Liguria 49, Borgaro, Torio Tel: IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japa 171 Tel: IR SOUTHEAST ASIA: 1 Kim Seg Promeade, Great World City West Tower, 13-11, Sigapore Tel: IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tu Haw South Road, Taipei, 10673, Taiwa Tel: Data ad specificatios subject to chage without otice. 10/ Dowloaded from Elcodis.com electroic compoets distributor