IRHF57230SE. Absolute Maximum Ratings

Transcription

1 PD-93857C RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) Product Summary Part Number Radiatio Level RDS(o) ID QPL Part Number IRHF57230SE K Rads (Si) 0.24Ω 6.7A JANSR2N7498T2 IRHF57230SE JANSR2N7498T2 200V, N CHANNEL REF:MIL-PRF-9500/706 5 TECHNOLOGY Iteratioal Rectifier s R5 TM techology provides high performace power MOSFETs for space applicatios. These devices have bee characterized for Sigle Evet Effects (SEE) with useful performace up to a LET of 80 (MeV/(mg/cm 2 )). The combiatio of low RDS(o) ad low gate charge reduces the power losses i switchig applicatios such as DC to DC coverters ad motor cotrol. These devices retai all of the well established advatages of MOSFETs such as voltage cotrol, fast switchig, ease of parallelig ad temperature stability of electrical parameters. TO-39 Features: Sigle Evet Effect (SEE) Hardeed Low RDS(o) Low Total Gate Charge Simple Drive Requiremets Ease of Parallelig Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratigs Parameter VGS = 2V, TC = 25 C Cotiuous Drai Curret 6.7 VGS = 2V, TC = C Cotiuous Drai Curret 4.3 IDM Pulsed Drai Curret À 26.8 Uits TC = 25 C Max. Power Dissipatio 25 W Liear Deratig Factor 0.2 W/ C VGS Gate-to-Source Voltage ±20 V EAS Sigle Pulse Avalache Eergy Á 49 mj IAR Avalache Curret À 6.7 A EAR Repetitive Avalache Eergy À 2.5 mj dv/dt Peak Diode Recovery dv/dt  4.2 V/s TJ Operatig Juctio -55 to 50 TSTG Storage Temperature Rage Lead Temperature 300 (0.063 i./.6mm from case for s) o C Weight 0.98 (Typical) g A For foototes refer to the last page 05/3/05

2 IRHF57230SE, JANSR2N498T2 Electrical Tj = 25 C (Uless Otherwise Specified) Parameter Mi Typ Max Uits Test Coditios BVDSS Drai-to-Source Breakdow Voltage 200 V VGS = 0V, ID =.0mA BVDSS/ TJ Temperature Coefficiet of Breakdow 0.26 V/ C Referece to 25 C, ID =.0mA Voltage RDS(o) Static Drai-to-Source O-State 0.24 Ω VGS = 2V, ID = 4.3A Ã Resistace VGS(th) Gate Threshold Voltage V VDS = VGS, ID =.0mA gfs Forward Trascoductace 4.2 S ( ) VDS > 5V, IDS = 4.3A Ã IDSS Zero Gate Voltage Drai Curret VDS= 60V,VGS=0V µa 25 VDS = 60V, VGS = 0V, TJ = 25 C IGSS Gate-to-Source Leakage Forward VGS = 20V A IGSS Gate-to-Source Leakage Reverse - VGS = -20V Qg Total Gate Charge 47 VGS =2V, ID = 6.7A Qgs Gate-to-Source Charge 2 C VDS = V Qgd Gate-to-Drai ( Miller ) Charge 6 td(o) Tur-O Delay Time 25 VDD = V, ID = 6.7A tr Rise Time VGS =2V, RG = 7.5Ω s td(off) Tur-Off Delay Time 35 tf Fall Time 40 LS + LD Total Iductace 7.0 H Measured from Drai lead (6mm /0.25i. from package) to Source lead (6mm /0.25i. from package) with Source wires iterally boded from Source Pi to Drai Pad Ciss Iput Capacitace 4 VGS = 0V, VDS = 25V Coss Output Capacitace 82 pf f =.0MHz Crss Reverse Trasfer Capacitace 8.8 Ω Source-Drai Diode Ratigs ad Characteristics Parameter Mi Typ Max Uits Test Coditios IS Cotiuous Source Curret (Body Diode) 6.7 ISM Pulse Source Curret (Body Diode) À 26.8 A VSD Diode Forward Voltage.5 V Tj = 25 C, IS = 6.7A, VGS = 0V Ã trr Reverse Recovery Time 274 s Tj = 25 C, IF = 6.7A, di/dt A/µs QRR Reverse Recovery Charge 2.2 µc VDD 25V Ã to Forward Tur-O Time Itrisic tur-o time is egligible. Tur-o speed is substatially cotrolled by LS + LD. Thermal Resistace Parameter Mi Typ Max Uits Test Coditios RthJC Juctio-to-Case 5.0 C/W RthJA Juctio-to-Ambiet 75 Typical socket mout Note: Correspodig Spice ad Saber models are available o the Iteratiol Rectifier Website. For foototes refer to the last page 2

3 Radiatio Characteristics IRHF57230SE, JANSR2N7498T2 Iteratioal Rectifier Radiatio Hardeed MOSFETs are tested to verify their radiatio hardess capability. The hardess assurace program at Iteratioal Rectifier is comprised of two radiatio eviromets. Every maufacturig lot is tested for total ioizig dose (per otes 5 ad 6) usig the TO-3 package. Both pre- ad post-irradiatio performace are tested ad specified usig the same drive circuitry ad test coditios i order to provide a direct compariso. Table. Electrical Tj = 25 C, Post Total Dose Irradiatio ÄÅ Parameter K Rads (Si) Uits Test Coditios ˆ Mi Max BV DSS Drai-to-Source Breakdow Voltage 200 V V GS = 0V, I D =.0mA VGS(th) Gate Threshold Voltage VGS = V DS, I D =.0mA I GSS Gate-to-Source Leakage Forward A V GS = 20V I GSS Gate-to-Source Leakage Reverse - V GS = -20V I DSS Zero Gate Voltage Drai Curret µa V DS = 60V, V GS =0V R DS(o) Static Drai-to-Source O-State Resistace (TO-3) Ω VGS = 2V, I D = 4.3A R DS(o) Static Drai-to-Source O-State Resistace (TO-39) 0.24 Ω VGS = 2V, I D = 4.3A V SD Diode Forward Voltage.5 V VGS = 0V, I D = 6.7A Iteratioal Rectifier radiatio hardeed MOSFETs have bee characterized i heavy io eviromet for Sigle Evet Effects (SEE). Sigle Evet Effects characterizatio is illustrated i Fig. a ad Table 2. Table 2. Sigle Evet Effect Safe Operatig Area Io LET Eergy Rage V DS (V) MeV/(mg/cm 2 )) (MeV) GS GS GS GS GS =-20V Br I Au VDS Br I Au VGS For foototes refer to the last page Fig a. Sigle Evet Effect, Safe Operatig Area 3

4 IRHF57230SE, JANSR2N498T2 I, I Drai-to-Source D D Curret Curret (A) (A) VGS TOP 5V 2V V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 5.0V I D, Drai-to-Source Curret (A) VGS TOP 5V 2V V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 5.0V 20µs PULSE WIDTH 0.0 T J = 25 C V DS, Drai-to-Source Voltage (V) 20µs PULSE WIDTH T J = 50 C V DS, Drai-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drai-to-Source Curret (A) T = 50 J C T J = 25 C V DS= 5 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(o), Drai-to-Source O Resistace (Normalized) 2.5 I 7.0A D = 6.7A V GS= 2V T J, Juctio Temperature ( C) Fig 3. Typical Trasfer Characteristics Fig 4. Normalized O-Resistace Vs. Temperature 4

5 I D, Drai-to-Source Curret (A) IRHF57230SE, JANSR2N7498T2 C, Capacitace (pf) 2000 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd 600 Coss = Cds + Cgd C iss 200 C oss C rss 0 V DS, Drai-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) 20 I 7.0A D = 6.7A V DS = 60V V DS = V 6 V DS = 40V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (C) Fig 5. Typical Capacitace Vs. Drai-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drai Curret (A) T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drai Voltage (V) OPERATION IN THIS AREA LIMITED BY RDS(o) Tc = 25 C Tj = 50 C Sigle Pulse µs ms ms 0 V DS, Drai-toSource Voltage (V) Fig 7. Typical Source-Drai Diode Forward Voltage Fig 8. Maximum Safe Operatig Area 5

6 IRHF57230SE, JANSR2N498T2 7.0 V DS R D I D, Drai Curret (A) T C, Case Temperature ( C) Fig 9. Maximum Drai Curret Vs. Case Temperature Fig a. Switchig Time Test Circuit V DS 90% R G V GS V GS Pulse Width µs Duty Factor % D.U.T. % V GS t d(o) t r t d(off) t f Fig b. Switchig Time Waveforms + - V DD Thermal Respose (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J =P DM x Z thjc + TC t, Rectagular Pulse Duratio (sec) PDM t t2 Fig. Maximum Effective Trasiet Thermal Impedace, Juctio-to-Case 6

7 E AS, Sigle Pulse Avalache Eergy (mj) IRHF57230SE, JANSR2N7498T V 300 I D TOP 3.0A 4.2A BOTTOM 6.7A V DS L DRIVER R G 20V V GS tp D.U.T. I AS 0.0Ω + - V DD A 200 Fig 2a. Uclamped Iductive Test Circuit V (BR)DSS Startig T J, Juctio Temperature ( C) tp Fig 2c. Maximum Avalache Eergy Vs. Drai Curret I AS Fig 2b. Uclamped Iductive Waveforms Curret Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 2 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Curret Samplig Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 7

8 IRHF57230SE, JANSR2N498T2 Foototes: À Repetitive Ratig; Pulse width limited by maximum juctio temperature. Á VDD = 50V, startig TJ = 25 C, L= 6.6mH Peak IL = 6.7A, VGS = 2V Â ISD 6.7A, di/dt 29A/µs, VDD 200V, TJ 50 C Ã Pulse width 300 µs; Duty Cycle 2% Ä Total Dose Irradiatio with VGS Bias. 2 volt VGS applied ad VDS = 0 durig irradiatio per MIL-STD-750, method 9, coditio A. Å Total Dose Irradiatio with VDS Bias. 60 volt VDS applied ad VGS = 0 durig irradiatio per MlL-STD-750, method 9, coditio A. Case Outlie ad Dimesios TO-205AF (Modified TO-39) LEGEND - SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kasas St., El Segudo, Califoria 90245, USA Tel: (3) IR LEOMINSTER : 205 Crawford St., Leomister, Massachusetts 0453, USA Tel: (978) TAC Fax: (3) Visit us at for sales cotact iformatio. Data ad specificatios subject to chage without otice. 05/