Studies on Extreme Ultraviolet Sources

Transcription

1 Studies o Extreme Ultraviolet Sources R. Lebert 1, L. Aschke 3, K. Bergma 1, S. Düsterer 3, K. Gäbel, D. Hoffma 1, P. Loose 1, W. Neff 1, P. Nickles 2, O. Rosier 1, D. Rudolph 4, H. Schwoerer 3, H. Stiel 2, I. Will 2, C. Zieer 3, R. Poprawe 1, W. Sader 2, R. Sauerbrey 3,G. Schmahl 4 1 Frauhofer Istitut für Lasertechik, Aache 2 Max-Bor-Istitut, Berli 3 IOQ, Friedrich Schiller Uiversity Jea, 4 Istitut für Rötgephysik, Göttige EUVL Source Developmet LPP Coversio Efficiecy Developmet of a high Power Laser Discharge Sources

2 Key Issues of EUVL Source Developmet Discharge P EUV = P electrical *η*ω EUVL-Source Laser P EUV = P Laser *η*ω Cocept Debris Coversio HP-Laser Target Coversio Debris Efficiet SPECS! NO HIGH! Low CoO HIGH! Z-Pich Capillary PF HCT-Pich Pulse eergy Pulse duratio Reprate Itesity Pulse duratio Size

3 Key issues addressed i the Germa scietific program Source Metrology Tool-Set for source characterizatio Compariso of sources (coordiated with ASML Flyig Circus) Key experimets o LPP - Optimizatio of Coversio (fs-ps-s), - LPP at High Repetitio rate, Ifluece of laser wavelegth, Ifluece of target Cocepts for high power lasers based o commercially available compoets Studies of ew laser cocepts Evaluatio of limits of gas discharge based EUVL sources Evaluatio Discharge Cocepts Operatio with high repetitio rate ad high power

4 igh Power Laser Developmet: based o commercial compoets. OSCILLATOR PRE-AMPLIFIER POWER AMPLIFIER P cw cw = 4.4 kw Diode lifetime > 20,000 h exp. Price < 1 M$ Preamplifier lifetime > 10,000 h price < 200 k$ commercial diode modules lifetime > 10,000 h price < 300 k$

5 igh Power Laser Developmet : RSL-DY-Laser based pre-amplifier Pulse eergy after sigle pass pre-amplifier as a fuctio of the diode laser curret E p_i : ad 8 mj max pulse eergy: 63 mj Repetitio Rate : 1 khz output power : 63 W Beam quality at max. pump power : M²=1,9 Output pulse Eergy E p,out [mj] Output power [W] Setup: 2 Amplifier modules, sigle pass, 1 khz Beam Quality at I Diode = 43 A: M 2 = 1,9 E P,i = 2,23 mj P i = 2,23 W E P,i = 3,76 mj P i = 3,76 W E P,i = 6,08 mj P i = 6,08 W E P,i = 8,05 mj P i = 8,05 W Theorie for E p,i =8,05 mj Diode curret I Diode [A]

6 LPP Coversio : Depedece o Itesity Target: froze Xe Focus : r F = 25 µm Laser : 10 s : 12 W : 1,2 J / pulse CONVERSION EFFICIENCY [ % / 2eV badwidth ] N photo /dλ/dω/pulse [ 1/m/2πsr/pulse ] 3.0x x x x x x10 13 xeo O m Be K- edge Xe XII Si L-edge Xe XI WAVELENGTH [ m ] INTENSITY [ W/cm 2 ] Optimized Itesity is close to W/cm 2 for 10 s laser pulses

7 LPP coversio : Depedece o Pulse Duratio : Solid Target Target : glass solid state Focus : r F = 10 µm Eergy : 250 mj / pulse Laser : Jea multi-tw Coversio efficiecy icreases by a factor of 5 from 100 fs to 8 s Photos per pulse / (sr 0.03 m) W/cm W/cm W/cm 2? Depedece o itesity Pulse legth [s] ==> lower pulse eergy ==> larger source Coversio efficiecy = 0,15 % / sr

8 LPP coversio : Depedece o Pulse Duratio: Droplet Target Target : Water droplet Focus : r F = 10 µm Eergy : 200 mj / Pulse Laser : Jea multi-tw Coversio efficiecy is early costat worst for 1-10 ps Low h due to high pulse eergy ad small source size Photos per pulse / (sr 0.03 m),63,48,32, W/cm W/cm 2 ==> better laser-droplet match ecessary Pulse legth [s] ==> lower pulse eergy ==> larger source Coversio efficiecy = 0,005 % / sr W/cm 2

9 LPP coversio : Depedece o repetitio rate : Waterjet with s P EUV = P Laser *η Pulse (I,τ) P Laser = f laser * E Pulse Target: Waterjet Focus : r F = 10 µm Laser : s : 0,5 kw : 0.5 µj - 50 mj EUV 13 m i 0.05 m bw [a.u.] Improved itesity P L = 0,5 kw; τ= 3 s Repetitio Rate f [khz] Decrease proportioal to 1/f (itesity to low) f opt = 180 khz ==> I opt = 3*10 11 W/cm 2

10 LPP coversio : Depedece o repetitio rate : Waterjet with ps Target : Waterjet Focus : r F = 10 µm Laser : 25, 40 ps : 0,5 kw : 0.5 mj - 50 mj EUV 13 m i 0.05 m bw [a.u.] 0,5 kw; 25 ps: o, 40 ps: o Improved itesity Repetitio Rate f [khz] F opt = 320 khz ==> ==> I opt = 1,7*10 13 W/cm 2

11 LPP Coversio : Hydrodyamic Stability of Targets Coversio is idepedet from reprate up to 250 khz ==> Jet target is hydrodyamical stable Target : Waterjet Focus : r F = 10 µm Laser : 25 ps pulses : 20 W-0,5 kw EUV 13 m i 0.05 m bw [a.u.] I = W/cm 2 P avg cost Repetitio Rate f [khz]

12 High Power Laser Developmet : Expected pre-amplifier power Oscillator: 8 mj / pulse I double pass operatio 2 modules reach the desired power ad are still operated i the log lifetime mode sigle pass of oe module sigle pass through 2 modules double pass through 2 modules

13 Discharge Plasmas as EUVL Sources Plasma-Focus Z-Pich IGNITION Curret flow Capillary-Discharge Hollow-Cathode triggered (HCT) Z-Pich η EUV = η Pich *η Geerator *η Output

14 Prelimiary Ratig of EUVL Source cadidates LPP fs LPP ps LPP s Capillary pich PFpich Z-Pich HCT Pich Sychr. Fuctio Acceptace Ecoomic low medium medium medium Key issue HPL- CoO HPL- CoO HPL- CoO Debris Power Debris Stability Power Power Reprate Power Covers. Cocept F&E -duratio log medium shorter medium medium medium medium log Show-Stopper Stability? Size

15 Outlook: best umbers combied ad outlook Approach Iput Power Coversio Ω Yield ito codeser 2 kw η = 0.03 %/sr 2sr 1.2 W Laser produced 5 kw η = 0.10 %/sr 2 π sr 30 W 10 kw η = 0.15 %/sr 2 π sr 90 W Gas discharge 5 kw 30 kw η = 0.03 %/sr η = 0.10 %/sr 1sr 2sr 1.5 W 60 W

16 Curret Flow Curret flow

17 Pich Igitio IGNITION

18 Sources for EUV-Lithography : Source developmet Approach Basic Research Developmet Tools Laser produced Coversio Efficiecy Debris free target High power laser High Reprate Target Laser CoO Target lifetime mtf Gas discharge Coversio efficiecy Debris free discharge High Power device High Reprate device CoO lifetime mtf System Spectral distributio Suited emitters Emissio characteristics Couplig to Optics Degradatio Cotamiatio