Discovering Electrical & Computer Engineering. Carmen S. Menoni Professor Week 3 armain.

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1 Discovering Electrical & Computer Engineering Carmen S. Menoni Professor Week 3 armain.html

2 TOP TECH 2012 SPECIAL REPORT IEEE SPECTRUM PAGE 28, JANUARY 2012 P.E. Ross & S.K. Moore Selection by the authors of technologies that are likely to figure prominently in coming year s tech headlines.

3 An extremely fine line Katie M, Palmer pp47, IEEE Spectrum 1/12 Extreme ultraviolet (EUV) lithography is the next generation printing method that will allow to continue fulfilling Moore s law. EUV is expected to print at the 14 nm node and beyond. EUV is expected to be in production by The goal for putting EUV systems in the field with adequate throughput of 60 wafers per hour is 100W average power. The ultimate goal is to achieve 250W power for throughput of 125 wafers per hour.

4 3/6/ Why EUV? EUV light belongs to that region of the electromagnetic spectrum between nm. 193 nm 13.5 nm visible light = 500 nm k CD NA Extreme ultra-violet light = nm

5 It is not easy to work in EUV region The selection of EUV for printing the next generation of integrated circuits was made because at a wavelength of 13.5 nm, highly reflective multilayer coatings can be made. TEM cross section of a Mo/Si multilayer (d period =6.85nm)

6 Printing system (stepper tool) Conventional Stepper EUV Stepper Essential elements: Light source Masks Projection system For EUV to be profitable, it needs to print 70 wafers/hour NXE

7 Sources of EUV Light Visible light is produced by atoms in which outer electrons are excited via other electrons, or with light. To generate EUV light it is necessary to access inner shell transitions Two types of incoherent sources: Laser assisted discharge plasma (X-treme technologies Germany) Laser created plasmas (Cymer USA; Gigaphotons Japan)

8 Incoherent plasma sources Laser produced plasmas Discharge produced plasmas

9 Incoherent plasma sources Laser assisted discharge plasma July 11, 2011 IMEC announces printing of the first Extreme Ultra Violet (EUV)-light wafers with ASML NXE:3100 mounted with XTREME s laser-assisted discharge plasma (LDP) source Output: 37 W at 100% duty cycle Hybrid technology combines the main advantages of the traditional LPP and DPP architectures: namely, power scalability and high stability. Additional advantages of LDP are: Pure photons (i.e., no tin contamination beyond the scanner interface), thus guaranteeing a long scanner lifetime, Clean photons (i.e., negligible DUV and IR spectral content), enabling imaging and overlay, Dose stability and repeatability (enabling CD uniformity), High duty cycles (enabling high effective throughput), and Improved source uptime (enabling high-volume manufacturing)

10 Laser produced plasmas How is the EUV light generated in the new source? The 13.5nm wavelength light is produced when a CO2 laser pulse is "shot" at a droplet of tin (Sn). The laser heats the droplet of tin to the point of evaporation and super-heating to critical temperature, then the atoms shed their electrons and become highly ionized (i.e. a plasma). The ions created by the interaction of the laser pulse and tin emit photons, which are collected by a highly reflective mirror. The mirror reflects and directs the resulting 13.5nm wavelength energy and focuses it through an aperture and into the lithography system. The Cymer LPP EUV Source System consists of a high power, high repetition rate pulsed CO2 laser, a beam delivery system, and a plasma vacuum vessel - complete with a droplet generator and collector, debris mitigation, and in-situ metrology to measure, monitor and control the system operation. Key Features: High Conversion Efficiency - Sn droplet & 10.6 micron laser High Collection Efficiency - Large collection angle and small source size. Long Lifetime - Isolated plasma Source can produce 50W of power at 80% duty cycle (Adv. Lithography 2012)

11 Mo/Si multilayers EUV Masks 6 6 Mo/Si multilayer coated mask Phase defects bumps Phase defects pits Absorber pattern bumps Currently: 0.3 defects/cm 2 Goal: defects/cm 2 Absorption defects pits

12 Projection System Uses high reflectors to guide light and illuminate the mask. This is because EUV light is highly absorbed by most materials. 0.25NA system Throughput: Required: 100 W will allow to print 100 wafers per hour Present specs: 50 W or 50 wafers per hour. For industry to have this technology in production by 2014/5 they need to have systems operating reliably now 3/6/

13 EUV Resists The mask pattern is projected into a wafer whose surface is covered by a thin (<100 nm) layer of a resist. Resist technology for EUV has advanced to the point that 12 nm lines and spaces can be printed with 0.3 NA objective. Inpria corporation have developed photoresists capable to print sub- 16 nm lines

14 Competitive technologies Double/Triple/Quadrupole patterning Multiple electron beam lithography Nano-imprint Directed self assembly

15 Technologies Sources of EUV light incoherent, high average power, low debrie Multilayer coatings for EUV most materials have little reflectivity and high absorption nm wavelength selected because of the performance of Mo/Si multilayers Masks with very few defects are needed to print at the 14 nm node and below. Mask inspection is a big issue Projection optics here the quality is X-treme to realize aberration free printing and high throughput