Recent Development Activities on EUVL at ASET
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1 Title Recent Development Activities on at ASET Shinji Okazaki ASET Laboratory 2 nd International Workshop on 1
2 Overall Development Plan ASET Basic Technologies 100% Government Funded Post ASET α Tool & β Tools Development Partially Industry Funded? Production Tools Development A New Consortium Partially Industry Funded? 70nm Node & Below 2 nd International Workshop on 2
3 Member Companies of ASET Laboratory Fujitsu Hitachi Intel Matsushita Mitsubishi NEC Nikon Oki Samsung Sharp Sony SPC Toshiba 2 nd International Workshop on 3
4 Advantages of EUV Lithography Almost all the issues of Current Optical Lithography will be solved by the use of EUV Lithography. No Resolution Limit Anticipated down to 30 nm. (λ = 13 nm, NA= 0.25) No OPC Required. (High Fidelity to Designed Pattern) No ARC Required. (High Light Absorption Coefficient of Substrate) No Strong RET Required. (Ultra-High Resolution Capability) No New Resist Chemistry Required. (Modified DUV resist can be applicable) No MEF Concern Required. (MEF 1.0) 2 nd International Workshop on 4
5 Basic Technologies for System Aspherical Optics Light Source Exposure System Mask Mask Blanks Mask Fabrication Inspection & Repair Simulation Resist Process Resist Materials & Process Aspherical Mirror Polishing Aspherical Mirror/Optics Metrology Illumination Optics Laser Plasma/Capillary Discharge/SR Stage Control in Vacuum Alignment System Mask Substrate Preparation Multi-Layer Deposition Absorber Materials Selection Absorber Patterning Mask Cleaning Inspection Method/Repair Procedure Simulation on Defects Printability Thermal & Mechanical Deformation Simulation Ultra Thin Layer Resist Bi-Layer Resist Top Surface Imaging Edge Roughness/Out Gas Reduction ASET Research Items 2 nd International Workshop on 5
6 Basic Technologies for System Aspherical Optics Light Source Exposure System Mask Mask Blanks Mask Fabrication Inspection & Repair Simulation Resist Process Resist Materials & Process Aspherical Mirror Polishing Aspherical Mirror/Optics Metrology Illumination Optics Laser Plasma/Capillary Discharge/SR Stage Control in Vacuum Alignment System Mask Substrate Preparation Multi-Layer Deposition Absorber Materials Selection Absorber Patterning Mask Cleaning Inspection Method/Repair Procedure Simulation on Defects Printability Thermal & Mechanical Deformation Simulation Ultra Thin Layer Resist Bi-Layer Resist Top Surface Imaging Edge Roughness/Out Gas Reduction 2 nd International Workshop on 6
7 Interference Pattern from PDI Aberrated wavefront from test optic NA=0.2 test optic φ150, spherical curvature:350mm Fringe Image Spherical wavefront from pinhole pin hole 1μφ Aberrated wavefront reflected by pinhole surface CCD Interference pattern PDI System 2 nd International Workshop on 7
8 PDI System Installed in Sagamihara Branch Laboratory Temperature Stabilized Camber 23±0.001 C Pinhole Unit Holder Bellows Vibration Isolator PDI System 2 nd International Workshop on 8
9 At Wavelength PDI New SUBARU BL-9 undulator grating test optics PS-PDI mask pinhole 2 nd International Workshop on 9
10 Undulaor Beamline in New SUBARU 2 nd International Workshop on 10
11 Beamline in Atsugi (NTT Super ALIS) Synchrotron Radiation Monochromator Reflectometer Exposure Micro Exposure Tool Replace 2 nd International Workshop on 11
12 Basic Technologies for System Aspherical Optics Light Source Exposure System Mask Mask Blanks Mask Fabrication Inspection & Repair Simulation Resist Process Resist Materials & Process ASET Research Items Aspherical Mirror Polishing Aspherical Mirror/Optics Metrology Illumination Optics Laser Plasma/Capillary Discharge/SR Stage Control in Vacuum Alignment System Mask Substrate Preparation Multi-Layer Deposition Absorber Materials Selection Absorber Patterning Mask Cleaning Inspection Method/Repair Procedure Simulation on Defects Printability Thermal & Mechanical Deformation Simulation Ultra Thin Layer Resist Bi-Layer Resist Top Surface Imaging Edge Roughness/Out Gas Reduction 2 nd International Workshop on 12
13 Defects maps after Mo/Si multi-layer coating Substrate: 150 mm Si wafer Standard wafer Defects reduction wafer Epi wafer 2 nd International Workshop on Defect size 70 nm,, counted by wafer inspection tool 13
14 Supersonic hydro-cleaning (SHC) technique (Schematic View) Liquid droplets impact into the substrate. Carrier gas Cleaning liquid Droplets (N 2 ) (deionized water) Nozzle designed for supersonic flow Droplet Side jet Side jet Twin-fluid supersonic flow Substrate High-speed side jets flow along the surface. This technique was developed at ASET SPC Laboratory. 2 nd International Workshop on 14
15 Mask contrast of various material films for DUV inspection Mask contrast of various material films for DUV inspection IMC (%) Fig. Comparsion of contrast of various absorber films against Mo/Si multilayer at 248nm rms : 0nm rms : 1nm Inspection Mask Contrast IMC= (M-A)/(M+A) M : Reflectivity of Mo/Si A : Reflectivity of absorber (not include reflectivity from bare-si ) Ta Ta-Ge Ta-N Al W-Si Ti Ti-N Cr Materials IMC i s hi gh i n ni t r i ded films i l (TaN, TiN N) 2 nd International Workshop on 15
16 Ta Dry Etching with a two-step process recipe a) Line and space 250 nm L&S b) Dot 250 nm Φ Ta after etching under the following conditions: G/P: 0.5 Pa; M/P: 600 W; R/P 50 W. For the first step, BCl 3 : 20 ml/min.; Cl 2 : 80 ml/min. For the second step, BCl 3 : none; Cl 2 : 100 ml/min. 2 nd International Workshop on 16
17 Delineation of Ta mask pattern Ta dry etching (Cl 2 + BCl 3 ) SiO 2 buffer etching 1st dry etching (Ar + C 4 F 8 +O 2 ) 2nd wet wtching (3.3% HF) Ta SiO 2 Microscope: lamda; 266 nm NA; 0.9 Figs. SEM and optical micrographs of Ta pattern delineated by two-srep buffer etching process. Fig. Simulated temperature rise for 6- inch-square, 250-mil. quarts substrate during Ta dry-etching Temperature (deg.) Max 160 deg. at power absorption of 0.35 Max 129 deg. at power absorption of 0.25 Etching time (sec.) End point < 60 sec. 2 nd International Workshop on 17
18 A photograph of prototype mask fabricated by ASET Substrate: 6-inch Si wafer Multilayer: Mo/Si (40 bilayers, Si-top top) Absorber: Ta (100 nm t ) Minimum Pattern size: 250 nm L/S 2 nd International Workshop on 18
19 Basic Technologies for System Aspherical Optics Light Source Exposure System Mask Mask Blanks Mask Fabrication Inspection & Repair Simulation Resist Process Resist Materials & Process ASET Research Items Aspherical Mirror Polishing Aspherical Mirror/Optics Metrology Illumination Optics Laser Plasma/Capillary Discharge/SR Stage Control in Vacuum Alignment System Oct , 19, 2000 Mask Substrate Preparation Multi-Layer Deposition Absorber Materials Selection Absorber Patterning Mask Cleaning Inspection Method/Repair Procedure Simulation on Defects Printability Thermal & Mechanical Deformation Simulation Ultra Thin Layer Resist Bi-Layer Resist Top Surface Imaging Edge Roughness/Out Gas Reduction 2 nd International Workshop on 19
20 Resist Process Technology for EUV Ultra-Thin Resist Si-containing Top-Layer Resist Bottom-Layer Resist Thick Resist Hard Mask Substrate Exposure Wet Development Silylation Hard Mask Etch O 2 -plasma (1) Ultra-Thin Resist (2) Bi-Layer Resist (3) Silylation 2 nd International Workshop on 20
21 Micro Exposure Tool at ARC 2 nd International Workshop on 21
22 100 nm L&S Patterns obtained by Atsugi Micro Exposure Tool NA:0.147 σ:0.01 Resist:ZEP(110 nm thickness) 100 nm 2 nd International Workshop on 22
23 70 nm L&S Patterns obtained by Atsugi Micro Exposure Tool NA:0.147 σ:0.01 Resist:ZEP(110 nm thickness) 70 nm 2 nd International Workshop on 140 nm 23
24 Pattern Replication Results : KrF Resist (Positive type) NA:0.147 σ: nm lines and spaces 2 nd International Workshop on 24
25 A New High NA Small Field Exposure System Vacuum Chamber Mask St age Mask NA: 0.30 Field Size: 500 x 300 µm Mask Size: 8 Φ Wafer Size: 8 Φ EUV Li ght Illumination Opt i cs Pr oj ect i on Opt i cs Sampl e Exchange Chamber Gat e Val ve Tr ansf er Lod Base pl at e f or Illumi nat i on Opt i cs Waf er Waf er St age Gat e Val ve Base Pl at e Pl at f or m TMP 2 nd International Workshop on 25
26 Research Goals '98 '99 '00 Mask Multi Layer Evaluation System Introduction Defect Reduction Guideline Multi-Layer Deposition System Introduction Investigation of Multi- Layer Deposition Low Defect Density Mask Development : ARC : Himeji : Sagamihara Resist & Process Resist Sensitivity Check Resist Evaluation Resist Materials Development Ultra Thin Layer Imaging Bi-Layer Imaging Top Surface Imaging Dry Development New Resist Materials Development 70nm Patterning using Simple Resist Process New Resist Process Development using New Materials System (Metrology) Large Field Optics Design Defect Reduction Guideline Aspherical Mirror Metrology System At Wavelength Mask Evaluation Accurate Aspherical Mirror Metrology using PDI System At Wavelength Metrology Verification Aspherical Mirror Polishing Accurate Aspherical Mirror Polishing for High NA Exposure Exposure System Development Goals Achieved are shown in Bold Type Exposure Experiment with Ring Field (<100nm) Exposure Experiment with Micro Field (<100nm) Exposure Experiment with Large Field (<70nm) Exposure Experiment with Micro Field (<70nm) 2 nd International Workshop on 26
27 Insertion Timing of Optical Lithography and NGL Year Design Rule Gate KrF+RET ArF+RET Optical Lithography F 2 +RET XRL EPL NGL EUV 2 nd International Workshop on 27
28 Acknowledgements We are grateful to Professor Hiroo Kinoshita of Himeji Institute of Technology, Professor Masaki Yamamoto of Tohoku University and Professor Seiichi Tagawa of Osaka University for their valuable discussions on this work. This work was performed under the management of ASET in the MITI R&D program supported by NEDO 2 nd International Workshop on 28
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