Nikon EUVL Development Progress Update

Transcription

1 Nikon EUVL Development Progress Update Takaharu Miura EUVL Symposium September 29, 2008 EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 1

2 Presentation Outline 1. Nikon EUV roadmap 2. Current status of EUV1 and latest data 3. Update progress in various areas 4. EUVL tool development challenges 5. Future projection lenses 6. Future tool realization 7. Development summary EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 2

3 Technology Options k1 Factor Path is clear to ArF (193 nm) EUV nm ArF ArFi HI ArFi (13.5 nm) ITRS Year Half Pitch nm 0.31 Timing issues for 55nm 0.3 high-index index immersion nm nm nm nm nm DP for 32 nm, 22nm? High-index index DP for 22 nm? EUV for late 32 nm and 22 nm beyond EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 3

4 EUVL Development Roadmap Cal. Year ITRS2007 DRAM ½ p Flash ½ p MPU C. Hole R&D programs Collaboration 65 nm 54 nm 84 nm EUVA (Tool) 57 nm 45 nm 73 nm 50 nm 40 nm 64 nm EUVA (Light source) 45 nm 36 nm 56 nm SELETE (EUV Lithography and Mask Program) 40 nm 32 nm 50 nm 36 nm 28 nm 44 nm 32 nm 25 nm 39 nm Nikon Exposure tool EUV1 NA 0.25 Early Process development Improvement EUV2 NA Process development -Production tool verification Verification HVM for 32nm hp beyond EUV3 NA>0.3 EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 4

5 Performance Expectation Specification Item EUV1 EUV2 (2010) EUV3 (2012) Field Size 26 x 33 mm 2 26 x 33 mm 2 26 x 33 mm 2 NA and Magnification 0.25, x1/4 0.25, x1/4 >0.3, x1/4 Flare 10 % 7 % 5 % Overlay 10 nm 5 nm <3 nm Throughput 5-10 wph (10W IF, 5mJ/cm 2 ) 76 shots 20 wph (50W IF, 10mJ/cm 2 ) 76 shots 100 wph (115W IF, 5mJ/cm 2 180W IF, 10mJ/cm 2 ) 76 shots EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 5

6 EUV1 Tool Development Status LDR Module Module/System Integration System Operation We are here Body EUV Reticle Stage Wafer Stage PO Field Size 26 x 33 mm 2 NA and Magnification 0.25, x1/4 Sigma 0.8 Overlay Source 10 nm Static exposures started. 28 nm L/S & CH capability. Dynamic exposure started. Optimization underway. EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 6

7 EUV1 PO Wavefront Map Extremely small WFE achieved mm 26 mm WFE 0.4 nm RMS (average) Min. 0.3 nm RMS ~ Max. 0.5 nm RMS EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 7

8 Static Exposure Results Through Full Ring-Field 32 nm hp Elbow pattern By courtesy of Selete Shown at Selete Symposium D E F G H C I B J A K 32 nm hp V-line C D E F G H I B 28 nm hp 27 nm hp 26 nm hp J A K EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 8

9 First Dynamic Exposure Result 26x33mm field By courtesy of Selete 26x33mm field 0.6mJ/cm2 32nm L/S 10mJ/cm2 Refer to Lithographic performance of Selete s full field EUV exposure tool by K.Tawarayama, et.al, on October 1. EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 9

10 Presentation Outline 1. Nikon EUV roadmap 2. Current status of EUV1 and latest data 3. Update progress in various areas 4. EUVL tool development challenges 5. Future projection lenses 6. Future tool expectation 7. Development summary EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 10

11 EUV Light Source Status Based on Source WS, May 2008 Cymer Gigaphoton (EUVA) Philips/Xtreme/Ushio Type LPP LPP DPP Sn, Droplet Sn, Droplet Sn, Rotating disc Rep. rate 50 khz 100 khz 5 khz Demonstrated feasibility of 100 khz Drive Laser Power 12 kw CO 2 laser 13 kw CO 2 laser - EUV Power * Burst ~35W@IF average (>10min., Duty~ 40%) for 1.5 hrs operation (Duty 32%) 60 (Sn plate) 170W@plasma 8W@IFP 100% duty Demonstrated feasibility of 3.5 Plasma size 210μm (1/e^2) (~100 um) < 1.3 mm Collector mirror MLM MLM Grazing * Estimated IF power based on a transmissibility of a collector mirror. Performance of integrated plasma source, collector and DMT modules must be demonstrated. EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 11

12 EUV Reticle Protection - Dual Pod Concept by Canon and Nikon - 1. Reticle in Cassette (RC) in Carrier (RSP200). 2. Cassette protects the reticle in load locks. 3. Top cover stays with reticle during in-tool handling. 4. Reticle remains in RC in library to protect against vacuum accidents and contamination. Top Cover Reticle Bottom Cover Cassette (Reticle Cover) RSP EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 12

13 Reticle Protection with CNE Dual Pod 1. CNE (Canon/Nikon/Entegris) Dual Pod has been evaluated (1) : Particle adders reported less than 0.01 particles / cycle st Yellow Ballot s vote in Q1 08 was completed unsuccessfully (rejected). Resubmit 2 nd Yellow ballot for the cycle five voting (started 27 th Aug. ). 3. The revised yellow ballot clearly specified carrier dedication for exposure tools and general purpose carrier for all other uses. (1) Particle-Free Mask Handling Techniques and a Dual-Pod Carrier, Mitsuaki Amemiya, Selete(Japan), et al. Proceedings of SPIE advanced lithography 2008, emerging lithography[ ] EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 13

14 Contamination Control Strategy 1. Long-life anti-oxidation capping layer 2. Carbon-film suppression and removal using EUV+O 2 in-situ cleaning -Oxygen gas introduction under EUV irradiation can suppress carbon deposition onto mirrors. 3. Experimentation facilities - New SUBARU in Himeji (Univ. of Hyogo) and new SLS facility in Kyushu now available. EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 14

15 Long-life Anti-oxidation Capping Layer Normalized Reflectivity Dose [J/mm 2 ] Some of our candidates show significant high anti-oxidation capabilities. EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 15

16 Carbon Film Suppression Relative Reflectance Change [] Reflectance History O2: none O2: Low P O2: Mid P O2: High P Hexadecane: 4E 6 Pa Accumurated Dose [J/mm 2 ] Accumulated Dose [J/mm 2 ] Oxygen gas introduction under EUV irradiation can suppress carbon deposition onto mirrors. EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 16

17 New EUV Irradiation Facility Saga Light Source Dec. 2007: - NTT Super ALIS operation ended. Jan - July 2008: - Remove experimental set up at NTT - Installation completed at SLS August 2008: - Operation started at SLS - Dedicated beam line to Nikon s contamination R&D Moved from NTT New production EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 17

18 Presentation Outline 1. Nikon EUV roadmap 2. Current status of EUV1 and latest data 3. Update progress in various areas 4. EUVL tool development challenges 5. Future projection lenses 6. Future tool realization 7. Development summary EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 18

19 EUVL Tool Development Challenges Imaging Performance Low aberration, low flare optics RET and uniformity control Overlay Thermal stability Thermal distortion Reticle Defect-free Particle-free Mask Stage Condenser Optics Source λ:13.5nm Xe Nozzle YAG Laser λ:1064nm Wafer Alignment Sensor EUV Lithography Projection Optics Wafer Stage Thermal Management Heat rejection of optics Throughput Higher optical chain transmittance Higher EUV source power Higher resist sensitivity CoO Improvement Vacuum quality and Optics lifetime Maintenance downtime EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 19

20 Projection Optics Technology PO technology improvement ongoing Supported by NEDO Supported by NEDO Supported by NEDO Supported by NEDO Mirror fabrication tools Optics evaluation tools EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 20

21 Wavefront Error Improvement First Prototype EUV1 PO Sample A EUV1 PO Sample B EUV1 PO Sample C WFE (nmrms) H H H H WFE (nm RMS) (Average) Sample A 2.2 Sample B 0.6 Sample C 0.4 EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 21

22 Calculation of Kirk flare Kirk flare [%] 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0% radius (flare range) [um] Flare Calculation Measured Calculated Kirk flare agreed with measurement. Sample B PO 10% 15% Sample C PO 6% 8% Kirk flare Kirk flare I I D B ( x d, y ( x, y b b Intensity d ) = ) = KF = TIS = PSF SC ( 1 TIS ) + PSF ( x x, y y ) dxdy EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 22 I B I I D min B max SC0 I D PSF bright field bright field SC ( x, y) dxdy ( x x TIS (Total Integrated Scatter) Flare F Kirk flare Flare SC ( x y ) = PSF ( x x, y d, y y y 0 ) bright field b d ) dxdy, dxdy Refer to Improvement of Optics for EUV Exposure Tool by K.Murakami, et.al, on October 1. b

23 Presentation Outline 1. Nikon EUV roadmap 2. Current status of EUV1 and latest data 3. Update progress in various areas 4. EUVL tool development challenges 5. Future projection lenses 6. Future tool realization 7. Development summary EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 23

24 NA 0.25 Imaging Simulation Process Window Vs. Illumination Condition 22 nm L/S 25 nm H/S Conv. 0.8 Ann. 0.4/0.8 Dipole 0.6/0.2 Conv. 0.8 Ann. 0.4/0.8 Quad 0.6/0.2 DOF (nm) DOF (nm) Dose Error (+/-%) Dose Error (+/-%) ED-Tree DOF Conditions: Lambda: 13.5 nm, NA: 0.25, CD error: +/-10% of CD, Mask CD error: +/-0.5 nm, Mask contrast: 1:100, Flare: 7%*pattern density EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 24

25 High NA Imaging Simulation DOF(22nm hp), Conv. DOF(22nm hp), Dipole DOF(16nm hp), Conv. DOF(16nm hp), Dipole Simulation conditions: Aerial image simulation; Dipole (R=0.2), delta CD +/-10% of CD, Mask CD error +/-3% of CD Mask contrast 1:100, Flare 8% EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 25

26 High NA Imaging Simulation Summary DOF >200nm Contrast > 0.5 DOF (nm) EL=+/-2% Contrast NA Sigma Conv Conv Conv Conv Dipole Dipole Dipole Dipole 16nm hp DOF >200nm Contrast > nm hp nm hp nm hp nm hp 0.25 NA + Dipole illumination or >0.3 NA + Conventional illumination 2. 16nm hp >0.3 NA + off-axis illumination EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 26

27 High NA EUV Projection Optics CD=K 1 λ/na DOF=λ/NA 2 Design examples HP 45nm 32nm 22nm NA NA NA NA NA NA K1 DOF(nm) 16nm M7 M8 General issues: 1. DOF reduction 2. Flare increase 3. Transmittance 4. Obscuration 5. Manufacture engineering 6 mirror system 8 mirror system 8 mirror system (center obscuration) NA EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 27

28 Throughput Improvement Current Optical Chain and source power IF Reticle Light Source IU PO Wafer SPF 1. Source power improvement 2. optical chain transmittance improvement HVM Concept Reticle Wafer Light Source IF IU (+SPF) PO EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 28

29 Efficient RET Illumination 1. Conventional Fly s eye mirror with pupil aperture Pupil aperture Reticle Source Fly s eye 1 Fly s eye 2 (Pupil plane) 2. Efficient RET Fly s eye mirror Reticle Intensity distribution in pupil + Easy to make - Power loss - Degrade uniformity on reticle Source Fly s eye 1 RET Fly s eye Fly s eye 2 (Pupil plane) + No power loss + No change uniformity on reticle - Difficult to make Fly s eye mirrors Refer to Improvement of Optics for EUV Exposure Tool by K.Murakami, et.al, on October 1. EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 29

30 Throughput Study Total Number of Mirrors vs. Throughput wph wph EUV power at IF (W) mJ/cm2 10mJ/cm2 5mJ/cm2 EUV power at IF (W) mJ/cm2 10mJ/cm2 5mJ/cm # of Mirror # of Mirror EUV power at IF (W) # of Mirror 50wph 15mJ/cm2 10mJ/cm2 5mJ/cm2 Condition; Mirror reflectance: 64% Shot number: 76 shots Key issues Source power improvement Optical transmittance improvement EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 30

31 EUVL HVM Tool Realization Optics improvement - WFE, flare, RET, distortion Throughput improvement - Optical chain transmittance - Light source IF power - Stepping and overhead time Overlay improvement - Thermal stability, heat rejection and cooling EUVL facility issues - New raised or recessed floor arrangement - Light source utility and space CoO issue - Consumable cost and lifetime EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 31

32 EUVL Production Tool Realization Tool consumables Optics Capping layer In-situ cleaning Refurbishment Vacuum quality Consumable Cost Reduction DPP Source consumables Collector DMT Cleaning Coating LPP EUV Source WS May, 2008 EUV Source WS May, 2008 EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 32

33 Summary EUVL technology targeted for 22 nm hp and beyond Current Nikon EUVL program Full field exposure tool (EUV1) integrated and starting Scan Exposure Early process development for 32 nm hp node World class projection optics performance EUV2 tool development Designed for both 32 nm hp and 22 nm device process development Production tool verification leading to EUV3 development EUV3 planned for production at 22 nm hp and beyond EUVL Symposium Tahoe T. Miura September 29, 2008 Slide 33

34 Acknowledgements 1. A part of this work was conducted under EUVA projects. EUVA projects have been supported by New Energy and Industrial Technology Development Organization (NEDO). - Nikon gratefully acknowledges Japan Ministry of Economy, Trade and Industry (METI) and NEDO for their supports. 2. Nikon also participate in Selete program and appreciate Selete members for their useful discussion and advice. Thank You. EUVL Symposium Tahoe September 29, 2008