TWINSCAN XT:1950i Water-based immersion taken to the max Enabling fast, single-exposure lithography at sub 40 nm

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1 TWINSCAN XT:1950i Water-based immersion taken to the max Enabling fast, single-exposure lithography at sub 40 nm SEMICON West, San Francisco July 14-18, 2008 Slide 1

2 The immersion pool becomes an ocean Gartner forecasts 60% growth* in sales of immersion systems in 2008 Immersion sets the advanced lithography standard ( 55 nm): >100 immersion systems have now been shipped to customers worldwide in 2008 by ASML nearly 20 million wafers have now been processed on immersion systems ASML sets the industry standard through continued investment in immersion technology: first system shipped in 2004 highest and improving system performance/specifications * Source: Stepper market forecast, worldwide, Q208, Gartner Inc. Cumulative number of shipped immersion systems Source: ASML Slide 2

3 The immersion pool becomes an ocean z Gartner forecasts 60% growth* in sales of immersion systems in 2008 z Immersion sets the advanced lithography standard ( 55 nm): z z z >100 immersion systems have now been shipped to customers worldwide in 2008 by ASML nearly 20 million wafers have now been processed on immersion systems ASML sets the industry standard through continued investment in immersion technology: z z first system shipped in 2004 highest and improving system performance/specifications * Source: Stepper market forecast, worldwide, Q208, Gartner Inc. Slide 3 Cumulative number of processed wafers in millions Source: ASML

4 Moore s Law: The industry is sustained by the need to make cheaper, smaller ICs that do more Slide 4

5 Immersion market matures Moore s Law Immersion now enables 38 nm Flash and 32 nm Logic the limit of single-exposure litho until volume EUV arrives: offers an immediate and major opportunity to continue to benefit from Moore s law, without double patterning shrink from 40 to 38 nm makes 10% more wafer area available for (Flash) chips NAND Flash memory smallest feature size measured in nanometers (half pitch) Source: International Technology Roadmap for Semiconductors Slide 5

6 Immersion market matures As immersion matures, technology advances continue to bring productivity and reliability improvements Value-of-ownership and return-on-investment significantly increase (more chips-per-wafer, more wafers-per-hour and less maintenance) Source: Intel Corp. Normalized Costs / Transistor Slide 6

7 TWINSCAN XT:1950i keeps Moore s Law alive Shrink continues; transistor and feature costs fall Pixel production lithography costs [p /pixel/s] DRY 110 nm AT:850 DRY 65 nm XT:1450 IMMERSION 38 nm (Flash) XT:1950i Slide 7

8 ASML immersion roadmap progresses Immersion enhancements Air drag immersion head Segmented wafer table In-line cleaning Advanced lens control Q1-06 Q2-07 Q1-09 1st shipment 1st shipment 1st shipment XT:1700i XT:1900i XT:1950i Resolution 45 nm Overlay 7 nm Throughput 122 wph NA 1.2 Resolution 40 nm Overlay 6 nm Throughput 131 wph NA 1.35 Resolution 38 nm Overlay 4 nm Throughput 148 wph NA 1.35 Slide 8

9 25% more performance with TWINSCAN XT:1950i Improved overlay performance options: DCO 3.5 nm SMO 4.0 nm MMO 7.0 nm Advanced lens control means improved imaging 38 nm resolution Liquid particle counter option gives fast feedback and control of immersion water quality Best-in-class immersion productivity (PEP & TOP options): 148 wph (300 mm) 125 x 16x32 x 30 mj/cm 2 Faster chuck swap Faster measure cycle iclean option boosts system cleanliness and reliability Slide 9

10 TWINSCAN XT 1950i: The ultimate in single exposure imaging Single Patterning (diffraction limited) XT:19X0i, NA = 1.35 XT:1700i, NA = 1.2 XT:14x0, NA = 0.93 Single Patterning k 1 Limit ~ 0.26 Double Patterning (CD Uniformity & Overlay limited) XT:19X0i, NA = 1.35 XT:1700i, NA = 1.2 XT:1400, NA = Resolution, Half Pitch [nm] Slide 10

11 Key benefits Manufacturing performance increased by 25% over previous high-end system: smaller features (38 nm) creates 10% more wafer area, which results in the most powerful chips to date and more chips per wafer higher throughput speed further increases performance and cost-effectiveness more accurate overlay control enables better scanner matching improved cleanliness increases yield and reduces maintenance Slide 11

12 Key features New immersion technology and thermal control system: improves throughput close to 15% improves uptime and overall productivity improves reliability improves overlay (by 30%), CD uniformity and scanner matching improves control and automation Broad range of options for superior contamination control and yield Industry-leading 1.35 NA lens for highest resolution Slide 12

13 New technology details in the XT:1950i Advanced image stability via new and additional lens manipulators Wafer table New immersion hood design providing higher meniscus stability, greater reliability and more productivity (148 wph) Improved thermal control of wafer table optimizing overlay performance iclean* makes inline cleaning more efficient (and reduces maintenance) * optional Slide 13

14 Dedicated to immersion: new facility for lean and clean system manufacturing New ASML immersion production facility Slide 14

15 Conclusion The immersion pool becomes an ocean: Moore s Law continues immersion is the fastest growing segment (75% growth in 2007, 60% forecast for 2008) immersion is the de facto standard for 55 nm and below ASML immersion leadership sets the technology and industry standard with the introduction of the XT:1950i: first ArF single-exposure system to do 38 nm further boosts immersion success higher chip yield and throughput of 148 wph improves value-ofownership improvements benefit all markets: DRAM, Flash and Logic 25% performance increase Slide 15

16 Commitment

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