Development Status of EUV Sources for Use in Alpha-, Beta- and High Volume Chip Manufacturing Tools
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1 Development Status of EUV Sources for Use in Alpha-, Beta- and High Volume Chip Manufacturing Tools Uwe Stamm, Jürgen Kleinschmidt, Bernd Nikolaus, Guido Schriever, Max Christian Schürmann, Christian Ziener XTREME technologies 4th International Symposium on EUV Lithography San Diego, CA, 07 November 2005
2 Outline 1. Recent news and developments 2. Performance of XTS EUV sources for micro-exposure tools 3. Sources for alpha- and beta-tools tools 4. Source technology for high volume manufacturing 5. Conclusion Parts of the work were supported by the BMBF under contracts no. 13N8131 and 13N8866 and by the European Community within the FP6 project more Moore,, IST IP Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 2
3 XTREME technologies: EUV source program expanded XTREME technologies, Göttingen / Jena, Germany a Joint Venture between Ushio Inc., Tokyo, Japan 50% 50% and JENOPTIK, Jena, Germany Mission: Development, manufacturing, marketing and service of high power EUV sources Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 3
4 XTREME technologies: EUV metrology development integrated from acquired the complete EUV metrology development / manufacturing activities Wide range of calibrated source metrology now available from XTREME technologies, Cooperation with BESSY II Next activities: continue working on metrology standardization development of next generation of high power metrology for plasma and IF characterization Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 4
5 EUV Metrology at XTREME: Calibrated standards E-Mon: Power E-Cam: Plasma size E-Spec: In band / Out of Band E-Mon IF: IF Power / Distribution Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 5
6 EUV Source Metrology from XTREME: Calibration laboratory Calibration & test laboratory Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 6
7 XTREME technologies: EUV Source development strategy Laser Produced Plasma Source Gas Discharge Produced Plasma Source Double Technology & Minimize Risk Main research and development activities Droplet target development Source power scaling Debris mitigation / Collector lifetime extension Collector integration Electrode lifetime improvement Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 7
8 Outline 1. Recent news and developments 2. Performance of XTS EUV sources for micro-exposure tools 3. Sources for alpha- and beta-tools tools 4. Source technology for high volume manufacturing 5. Conclusion Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 8
9 XTS 13-35: 35: Xenon GDPP EUV Source in MS-13 EUV Microstepper Market Introduction of XTS ( 35 W/2π) ) in 2003 Sources installed at Intel and International SEMATECH Main Specifications - Power of 35 W in 2π2 sr at 1000 Hz - Optics lifetime with debris filter of 100 million pulses XTS source in EUV Microstepper at Exitech Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 9
10 XTS 13-35: 35: Xenon GDPP EUV Source in MS-13 EUV Microstepper Current status: Optics shows no degradation after operation of > 100 million pulses under field conditions Sustaining product support topics: Reliability improvements by technology upgrades Continuing lifetime tests under field operating conditions Implementation of spare part logistic and service plan World's first commercial EUV lithography tool installed at Intel (Source: Intel) Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 10
11 XTS technology upgrade: XTS like source with 2 khz Specifications Power: 70 W/2π at 2 khz Corresponds nominally to up to 6 W available IF power, in burst operation, limited by collector power load Electrode lifetime of > 80 h Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 11
12 Outline 1. Recent news and developments 2. Performance of XTS EUV sources for micro-exposure tools 3. Sources for alpha- and beta-tools tools 4. Source technology for high volume manufacturing 5. Conclusion Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 12
13 GDPP EUV Sources: α-/β- tool power scaling EUV Power Requirement Drives Source Architecture! Intermediate focus power at 13.5 nm: W Electrical input power 50 kw (MET = 10 kw) New cooling concepts for electrodes Adaptation of electrical high voltage circuit Optimized debris mitigation Collector optics integration aspects (cooling, position control & precision alignment) Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 13
14 Xenon GDPP EUV Sources: Power scaling Stabilized EUV power at 4000 Hz: 200 W / 2π 2 sr Usable IF power: W (etendue dependent) Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 14
15 Xenon GDPP EUV Sources: Integration of collector mirrors Collectors from two optics manufacturers integrated, tests performed up to 4 khz (burst) Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 15
16 Xenon GDPP EUV Source: Intermediate focus energy stability Source operating with 4 khz repetition rate Intermediate focus power 12 W Pulse to pulse energy stability σ = 5.8 % Distribution of EUV radiation in IF Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 16
17 EUV pulse energy, mj/sr Xenon GDPP EUV Source: Dose stability control Pulse Energy Dose Energy No feedback loop: Energy stability = 8.49 % Dose stability = +/ % (1σ,, 100 pulses window) Pulse number With feedback loop: Energy stability = 11.3 % Dose stability = +/ % (1σ,, 100 pulses window) EUV pulse energy, mj/sr (E dose -E 0 )/E 0,% ,0 0,8 0,6 0,4 0,2 0,0-0,2-0,4-0,6-0,8-1,0 Pulse Energy Dose Energy Pulse number with feedback control simulation σ dose =0,12% Pulse number Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 17
18 GDPP collector optics lifetime at α-/β- tool power level Main challenges: 1. Sputtering by fast particles (ions, atoms) 2. Deposition of material (vacuum contaminations, condensable fuel, sputtered material) Xenon fuel is not condensing main challenge is fast particles! New collector optics protection scheme tested at up to 200 W EUV power at 4 khz (10( 30 W IF power) Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 18
19 GDPP collector optics lifetime at α /β tool power level average slope 1.6nm / billion (still within resolution limit) Collector erosion can be stopped, below detection limit Results support hours collector coating lifetime (5( 10 billion pulses) Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 19
20 Additional ion energy reduction for xenon: fuel mixing 2500 Abundance (a.u.) Energy (kev) Pure Xenon 5% Hydrogen data from D. Ruzic et. al (UIUC) Addition of H2 to xenon discharge reduces: mean energy of fast ions shifts from 6 to 4 kev amount of fast ions approx. halved for more details see UIUC presentations during this symposium Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 20
21 GDPP EUV Sources: α-/β- tool solution Conclusion from data: For alpha and beta tools xenon-fueled GDPP-sources offer adequate solutions! Main advantages: early experience with xenon- fueled field installations exists with robust performance data no contamination of optics by condensing fuel low complexity Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 21
22 Outline 1. Recent news and developments 2. Performance of XTS EUV sources for micro-exposure tools 3. Sources for alpha- and beta-tools tools 4. Source technology for high volume manufacturing 5. Conclusion Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 22
23 EUV Sources for HVM: Generic investigations Intermediate focus power at 13.5 nm: 115 > 150 W Efficiency needed > 3% metal fuel handling Electrical input power > 100 kw electrode design and cooling Laser power > 20 kw target and laser concepts High power debris mitigation Collector optics power handling, cooling, fuel and cleaning resistance Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 23
24 LPP EUV source technology development: Collector Collector with πsr collection angle manufactured and characterized, average reflectivity > 60 % IF power of > 2 W from 10 W in 2πsr2 collector mirror Collector chamber adjacent to laser Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 24
25 LPP EUV Source technology development: Droplet target Current source parameters Industrial solid state lasers: khz on target 10 W power in 2π2 sr at etendue matched plasma size 3.3 W in intermediate focus projected with 5 sr source collector Optics lifetime of 280 hours or 5 billion pulses New nozzle design enables generation of stable droplets Droplet size 35 µm, velocity 35 m/s Main challenges to overcome under development: Droplet on demand Droplet distance > 3 mm Velocity > 100 m/s Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 25
26 GDPP EUV Sources: Power scaling to HVM tin results EUV power at 5000 Hz: 800 W / 2π2 sr Tin Plasma Image Achievable IF power: 115 W (1.9 sr collector mirror) Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 26
27 Source component lifetime: Rotating disc electrodes (RDE) Principle of RDE Laboratory setup of RDE source electrodes plasma laser beam insulator EUV- radiation rotating shaft Rotating disc electrode GDPP: reduces heat load per cm 2 limits the temperature rise will enable several 100 hours electrode lifetime Development in cooperation with V. M. Borisov et al., TRINITI, Troitsk, Russia Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 27
28 Performances of RDE sources x- cross section counts/pixel FWHM 0,205mm 1/e² 0,455mm x / µm y- cross section counts/pixel FWHM 1,21mm 1/e² 2,08mm Plasma size: 1.2 mm x 0.5 mm (FW 1/e 2 ) y / µm Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 28
29 Performances of RDE sources 60 3, EUV-Energy/2πsr [mj] ,0 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 Stored Energy in C1 [J] 7m42s;PRR=2910Hz;IGBT;Eзап=4.3J; 2rps 2,5 2,0 1,5 1,0 0,5 CE/2π [%] 130 W of EUV output power after 10 min of continuous operation at 3 khz EUV,mv Time,ms Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 29
30 Outline 1. Recent news and developments 2. Performance of XTS EUV sources for micro-exposure tools 3. Sources for alpha- and beta-tools tools 4. Source technology for high volume manufacturing 5. Conclusion Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 30
31 Conclusion for EUV source technology and topics α / β β tool sources Will be based on xenon GDPP sources IF power of W with reasonable electrode and optics lifetime HVM source development Target development for LPP Electrode configurations rotating electrodes Optics protection, contamination reduction and cleaning High power debris mitigation Collector optics power handling, cooling, Integrated source diagnostics and feedback control Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 31
32 EUV Sources: Power P roadmap Year Intermediate focus power W W W 2010 > 150 W * roadmap of source products, not of laboratory champion data Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 32
33 Acknowledgement We thank your partners at TRINITI, Troitsk, Russia; University of Illinois at Urbana Champaign, USA; Argonne National Lab, USA; MediaLario Technologies, Italy; Zeiss Laser Optics, Germany; Institute for Optics and Fine Mechanics, Jena, Germany; Institute for Lasertechnik Aachen, Germany XTREME contributions from H. Ahlbrecht, I. Ahmad, I. Balogh, H. Birner, D. Bolshukhin, J. Brudermann, J. Bürger, R. de Bruijn, L. Dippmann, G. Dornieden, H. Ebel, A. Eickhoff, S. Enke, F. Flohrer, F. Friedrichs, A. Geier, S. Götze, B. Grote, A. Hoang, A. Keller, D. Klöpfel, V. Korobochko, B. Mader, M. Möritz, R. Müller, J. Ringling, B. Tkachenko, D.C. Tran, M. Wegstroth, C. Ziener et al. Parts of the work were supported by the BMBF under contracts no. 13N8131 and 13N8866 and by the European Community within the FP6 project more Moore, IST IP Uwe Stamm, 4th International Symposium on EUV Lithography, San Diego, CA, November 2005 Page 33
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