Tin LDP Source Collector Module (SoCoMo) ready for integration into Beta scanner ABSTRACT Keywords : 1. INTRODUCTION

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1 1 ) XTREME technologies GmbH, Steinbachstr. 15, 5274 Aachen, Germany 2 ) Gotemba R&D Center, Extreme Ultraviolet Lithography System Development Association (EUVA), 1-9, Komakado, Gotemba, Shizuoka-prefecture, , Japan ABSTRACT Keywords : 1. INTRODUCTION 9

2 Throughput(WPH) High Duty Cycle Max Throughput Throughput DC 8% Throughput DC 6% Throughput DC 2% Throughput DC 3% Throughput DC 1% 2 Low Duty Cycle Dose Resist(mJ/cm2) 2. THE LASER DISCHARGE PLASMA TECHNOLOGY Tin Supply Disc Laser Discharge Current Capacitor Bank Tin Film Dynamic Tin Cooling Tin Supply Disc 1

3 Output power after IF [W] W after IF clean photons 1% Duty Cycle Tin free Input power[kw] Tin debris Plasma Foil Trap Intermediate Focus(IF) GI aperture collector Baffles Vessel wall 3. PRE-PRODUCTION SOURCE COLLECTOR MODULE (Dose(i)/Dosenominal)-1[%] one lot ±.2% -1 time [min]

4 光技術情報誌 ライトエッジ No 年8月発行 SPIE Advanced Lithography C EUV [mj/2pi] B 8 NXE 31 (in the field) 4 ADT (in the field) electrical energy [J] 4. HIGH VOLUME MANUFACTURING DEVELOPMENT To achieve a Cost of Ownership (CoO) making EUV lithography viable in a high volume manufacturing (HVM) environment, the footprint of the scanners needs to be minimized in order to save expensive clean room space. This requires a compact design of the optical system as well as the EUV source itself. A new architecture of the source exhibiting a smaller footprint and leveraging a scaled up version of the existing and proven technology is now being designed (Figure 8). Figure 9: Linear dependence of the output energy per pulse in dependence on the electrical pulse input energy for the different source generations alpha demo tool (ADT), pre-production (NXE 31) and HVM (NXE 33 series) 4 output energy [mj/2 π] Figure 7 : XTREME s SoCoMo integrated into ASML s NXE: 31 scanner (courtesy ASML). 4 khz pulse number 4 5 Figure 1: Demonstration of a repetition rate of 4 khz. The pulse to pulse output energy remains sufficiently constant for the used un-stabilized mode. 5. PRODUCTION RAMP UP Figure 8 : HVM source model using the proven technology of the beta source in a more compact design This new design has a reduced volume, a new beam direction, an increased cooling capability which enables the required higher output power. Whereas the output power of the pre-production system ( NXE 31 ) will achieve the 1W power level, the output power for the HVM scanners ( NXE 33 series) still needs improvement to reach the required 25W and beyond. This will be achieved not only by raising the electrical input energy per pulse ( Figure 9 ) but also by increasing the repetition rate of the laser. For the latter a value of 4kHz has been demonstrated successfully (Figure 1). 12 講 演 発 表 With 24 sources installed worldwide, more than 7 wafers exposed with ADT and more than 45 wafers equivalent exposed at ASML on NXE 31, XTREME technologies has enabled the development of EUV. The experience gained over the years has also positioned the company first on the learning curve: the technology concept is sound and the technology itself has been proven. Because of the high costs involved at EUV, the semiconductor industry cannot afford the design of the source to be stabilized in the field and finalized only several years after its original introduction as it used to being the case at DUV. The design of XTREME s HVM sources is now being finalized with the goal to reach sufficient maturity at the time of its first introduction. Further beyond, with the final acquisition in 21 of Philips Extreme UV assets, the Ushio Group to w h i ch XTR E ME b e lo n g s t o h a s s ea l ed it s commitment to EUV lithography and to the semiconductor industry. Leveraging Ushio Group s existing worldwide infrastructure, XTREME s support

5 ACKNOWLEDGEMENTS REFERENCES SUMMARY 13