Pitch Pack Microsemi full SiC Power Modules
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- Lucinda Day
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1 Pitch Pack Microsemi full SiC Power Modules October 2014
2 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy (ev) Thermal conductivity (W/cm.K) Positive Temperature coefficient 10x Higher Lower On-Resistance Higher efficiency 2x Higher Faster switching Size reduction 3x Higher Higher Junction temperature Improved cooling 3x Higher Higher power density Higher current capabilities - Self regulation Easy paralleling SiC is the perfect technology to address today and future applications Lower Power Losses Higher frequency cap. Higher junction temp. Easier cooling Downsized system Higher Reliability 2014 Microsemi Corporation 2
3 Markets and advantages of SiC Markets Applications High Temp. High Freq. Small, Light System Low Loss, Efficiency Aerospace Actuation Air Conditioning Power Distribution X X X X Defense Oil drilling Motor Drives Aux. Power Supplies X X X X Transportation Power Train Fast Battery Charger DC/DC Converters KERS X X X X Solar Energy PV inverter X X X Wind turbine Inverter X X Industrial Medical Motor drives Welding UPS, SMPS Induction Heating MRI power supply X-Ray power supply X X X X X X 2014 Microsemi Corporation 3
4 SiC Module advantages vs Discrete Assembly Features Higher power density Isolated and conductive substrate Internal wiring Minimum parasitic Minimum output connections Mix & match components Whole system improvement Benefits Size and cost reduction Excellent thermal management Less external hardware Higher performance and efficiency Reduced assembly time Optimized losses Performance Reliability Size Cost SiC COST Reduced size and cost of magnetics and heatsink 2014 Microsemi Corporation 4
5 SiC-MOSFET and packaging Whatever the selected SiC-MOS device, packaging choice will help to emphasize the best of SiC performance for the application. High stray inductances will lead to higher oscillation and voltage spikes Not efficient paralleling will compromise reliability of the system Symmetric layout will guaranty performance stability Built-in internal series gate resistor for easy paralleling Kelvin source signal for easy drive D3-62mm package 30mm height 30nH stray inductance SP6-62mm package 17mm height 15nH stray inductance SP6P - 62mm package 12mm height 5nH stray inductance 2014 Microsemi Corporation 5
6 SiC Module = Higher Power Density Parameter Microsemi APTGLQ300A120G Microsemi APTMC120AM20CT1AG Comparison SiC vs Si Semiconductor type Trench4 IGBT SiC Mosfet Tc=80 C 300A/1200V 108A/1200V Package type SP6 108x62mm SP1 52x41mm 3x smaller 30kHz Tc=75 C, D=50%, V=600V 130A 130A - 50kHz Tc=75 C, D=50%, V=600V 60A 115A ~2.0x higher 100A Tj=150 C, V=600V 16.0mJ 3.4mJ 4.7x lower MORE POWER in SMALLER VOLUME SiC MOSFET Si IGBT Microsemi Corporation 6 Frequency (khz) Operating Frequency vs Drain Current I D, Drain Current (A) V BUS =600V D=50% T J =150 C T C =75 C
7 Parallel diode to SiC-MOS: to Be or not to Be? Intrinsic Body diode Additional Fast Series & Parallel diode Additional Parallel diode Si-MOSFET SiC-MOSFET SiC ADVANTAGE Poor Reverse Recovery Characteristics Low Vf Blocking series diode mandatory to avoid slow body diode to conduct No advantage: Current flow would go to body diode only Good Reverse Recovery Characterisitcs. Higher Vf No Need for blocking diode Mandatory to reduce high conduction losses of body diode Low SiC diode switching losses Less components count and less conduction losses Allow full SiC-MOS performance without limitation of body diode losses SiC-MOS Body diode is enough when operated at low duty cycle SiC-MOS parallel diode required if operated at high duty cycle Parallel diode can be avoided if SiC -MOSFET is turned ON (Synchronous Rectification) 2014 Microsemi Corporation 7
8 SiC-MOS VSD performance vs VGS APTMC120AM20CT1AG VSD curves vs ISD at given VGS values The lower the negative gate voltage the higher the Vsd The higher the positive gate voltage the lower the Vsd To minimize the diode conduction losses the SiC-MOSFET should be turned ON with VGS = 20V 2014 Microsemi Corporation 8
9 SiC-MOSFET gate drive Example of Opto-driver gate driver that can be used to drive SiC Mosfet Increasing Gate voltage to 20V reduces total losses by 30% Negative gate bias further reduces losses, but the impact is smaller than for IGBTs Vgs voltage range should be within -5V to +20V to optimize total losses 2014 Microsemi Corporation 9
10 SiC-MOS Power module application AUTOMOTIVE 2 x 1200V 25mΩ SiC Mosfet per switch 2 x 1200V 20A SiC schottky per switch 9 modules size 52mm x 41mm CUSTOMER s OBJECTIVE SMALLER AND LIGHTER SYSTEM RELIABILITY PERFORMANCE Reference design 3-phase inverter 3 modules per phase 100KW DC voltage = 900V >220A Tc=75 C Fsw >100kHz 2014 Microsemi Corporation 10
11 SiC Standard Power Module - Products Offering SiC Mosfet + SiC diodes PFC 3-Level Phase leg 3-phase bridge SiC diodes Dual diode Full bridge IGBT + SiC diodes Boost chopper Dual boost chopper Mosfet/CoolMos + SiC diodes Single switch Phase leg Full bridge 3-phase bridge SiC power modules advantages High speed switching Low switching losses Low input capacitance Low drive requirements Low profile Minimum parasitic inductance Lower system cost Increased reliability Optional material assembly AlN substrate Al2O3 substrate Copper base plate AlSiC base plate Custom product capabilities Modules designed for high frequency, high performance, high density and energy saving power systems 2014 Microsemi Corporation 11
12 SiC MOSFET NEW PRODUCTS! Technology Topology BVDS (V) Current Tc=80 C Rdson max. per switch Tj=25 C APTMC120TAM12CTPAG 150A 12mΩ APTMC120TAM17CTPAG 3-Phase leg + Parallel diode 100A 17mΩ APTMC120TAM33CTPAG 60A 33mΩ APTMC120AM25CT3AG Low Profile and Industry standard packages Great design flexibility to offer modified versions! 1200V APTMC120AM12CT3AG Phase Leg 150A 12mΩ APTMC120AM09CT3AG + Parallel diode 200A 9mΩ Package - Height SP6P 12mm 80A 25mΩ SP3 12mm APTMC120AM16CD3AG 100A 16mΩ D3 30mm APTMC170AM60CT1AG 40A 60mΩ 1700V APTMC170AM30CT1AG 80A 60mΩ SP3 12mm SP1 12mm SP1 SP3 SP6P D Microsemi Corporation 12
13 SiC MOSFET EXISTING STANDARD PRODUCTS PART NUMBER TOPOLOGY BVDS (V) Current Tc=80 C Rdson max. per switch Tj=25 C PACKAGE APT50MC120JCU mΩ PFC SOT-227 APT100MC120JCU mΩ 1200 APTMC120HR11CT3G * mΩ T-Type APTMC120HRM40CT3G * 50 40mΩ SP3F APTMC60TL11CT3AG mΩ APTMC60TLM55CT3AG Three level inverter 600** 40 55mΩ APTMC60TLM14CAG mΩ SP6 APTMC120AM55CT1AG 40 55mΩ Phase Leg SP1 APTMC120AM20CT1AG mΩ +Parallel diode APTMC120AM08CD3AG 190 8mΩ D3 * 600V switch uses Si IGBT ** 600V SiC diodes used PFC T-TYPE 3-LEVEL PHASE LEG 2014 Microsemi Corporation 13
14 SiC DIODE EXISTING STANDARD PRODUCTS DUAL DIODE VRRM (V) DIODE Type IF (A) Tc=100 C VF (V) Tj=25 C Package 600 SiC 1200 SiC FULL BRIDGE VRRM (V) DIODE Type 600 SiC 1200 SiC SOT-227 APT2X20DC60J APT2X21DC60J SOT-227 APT2X30DC60J APT2X31DC60J SOT-227 APT2X40DC60J APT2X41DC60J SOT-227 APT2X50DC60J APT2X51DC60J SOT-227 APT2X60DC60J APT2X61DC60J SP1 - APTDC902U601G SOT-227 APT2X20DC120J APT2X21DC120J SOT-227 APT2X40DC120J APT2X41DC120J SOT-227 APT2X50DC120J APT2X51DC120J SOT-227 APT2X60DC120J APT2X61DC120J IF (A) VF (V) Tc=100 Tj=25 C Package C Part Number SP1 APTDC20H601G SP1 APTDC40H601G SOT-227 APT40DC60HJ SOT-227 APT10DC120HJ SP1 APTDC20H1201G SOT-227 APT20DC120HJ SP1 APTDC40H1201G SOT-227 APT40DC120HJ 12mm height Isolated packages Solder pins (SP1) or screw terminals (SOT-227) SOT-227 SP Microsemi Corporation 14
15 Si IGBT+SiC DIODE EXISTING STANDARD PRODUCTS BOOST CHOPPER VCES (V) IGBT type IC (A) Vce(on) (V) Tc=80 C at rated Ic Package NTC Part Number 600 NPT SOT APT50GF60JCU SOT APT15GF120JCU2 NPT SOT APT25GF120JCU SP1 YES APTGF50DA120CT1G TRENCH 4 FAST SOT APT25GLQ120JCU SOT APT40GLQ120JCU2 DUAL CHOPPER VCES (V) IGBT type IC (A) Tc=80 C Vce(on) (V) at rated Ic Package NTC Part Number 1200 TRENCH 4 FAST SP3F YES APTGLQ40DDA120CT3G SOT-227 SP1 SP3F 2014 Microsemi Corporation 15
16 Si MOSFET + SiC DIODE EXISTING STANDARD PRODUCTS CHOPPER VDSS (V) MOSFET type RDS(on) (mω) ID (A) Tc=80 C Package NTC Boost chopper Buck Chopper 500 MOS SOT APT58M50JCU2 N/A SOT APT50N60JCCU2 N/A 600 COOLMOS SP1 YES N/A APTC60SKM24CT1G SP4 YES APTC60DAM18CTG N/A 900 COOLMOS SOT APT33N90JCCU2 N/A SP1 YES APTC90DAM60CT1G APTC90SKM60CT1G 1000 MOS SOT APT26M100JCU2 APT26M100JCU MOS SOT APT20M120JCU2 APT20M120JCU SP1 YES APTM120DA30CT1G N/A SOT-227 SP1 SP Microsemi Corporation 16
17 Si MOSFET + SiC DIODE EXISTING STANDARD PRODUCTS SINGLE SWITCH + SERIES FRED AND SiC PARALLEL DIODES VDSS MOSFET RDS(on) ID (A) Package (V) type (mω) Tc=80 C NTC Part Number 1000 MOS SP6 option APTM100UM65SCAVG 1200 MOS SP6 option APTM120U10SCAVG SP4 17mm PHASE LEG + SERIES FRED AND SiC PARALLEL DIODES VDSS MOSFET RDS(on) ID (A) Package (V) type (mω) Tc=80 C NTC Part Number 500 MOS SP4 YES APTM50AM38SCTG SP6 - APTM50AM24SCG SP4 YES APTC60AM35SCTG 600 COOLMOS SP4 YES APTC60AM24SCTG SP6 - APTC60AM18SCG 900 COOLMOS SP4 YES APTC90AM60SCTG SP4 YES APTC80A15SCTG 800 COOLMOS SP4 YES APTC80A10SCTG SP6 - APTC80AM75SCG 1000 MOS SP6 - APTM100A13SCG FULL BRIDGE + SERIES FRED AND SiC PARALLEL DIODES VDSS MOSFET RDS(on) ID (A) Package (V) type (mω) Tc=80 C NTC Part Number 500 MOS SP4 YES APTM50HM75SCTG 600 COOLMOS SP4 YES APTC60HM70SCTG SP4 YES APTC60HM45SCTG 800 COOLMOS SP4 YES APTC80H29SCTG 900 COOLMOS SP4 YES APTC90H12SCTG 1000 MOS SP4 YES APTM100H45SCTG TRIPLE PHASE LEG VDSS MOSFET RDS(on) ID (A) Package (V) type (mω) Tc=80 C NTC Part Number 600 COOLMOS SP6-P YES APTC60TAM21SCTPAG 1000 MOS SP6-P YES APTM100TA35SCTPG SP6 SP6P 17mm 12mm 2014 Microsemi Corporation 17
18 Short form Catalog AVAILBLE FROM MICROSEMI ORDERING STORE DATA SHEET AND MOUNTING INSTRUCTION AVAILABLE AT 1,059 standard P/N General information about power modules New SiC modules 2014 Microsemi Corporation 18
19 SiC brochure AVAILBLE FROM MICROSEMI ORDERING STORE 2014 Microsemi Corporation 19
20 2014 Microsemi Corporation 20
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